My Inquiry
My Account
Vishay Siliconix IRFZ14L
- Part No.:
- IRFZ14L
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFZ14L.pdf
- Description:
- MOSFET N-CH 60V 10A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,320
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFZ14L from Vishay Siliconix is a 60 V, 10 A N-channel power MOSFET in I2PAK (TO-262) through-hole package, optimized for low-profile high-current switching in DC-DC converters, motor drivers, and power supplies. It delivers RDS(on) = 0.20 Ω at VGS = 10 V, supports 175 °C junction operation, and features fast switching with 11 nC total gate charge.
For engineers reviewing the IRFZ14L datasheet, IRFZ14L pinout, IRFZ14L application, or IRFZ14L equivalent, this page provides verified package mapping, validated thermal and dynamic parameters, confirmed body diode recovery performance (trr = 70–140 ns), and real-world selection guidance for industrial power stage design.
Technical Context
The IRFZ14L employs third-generation silicon process technology to achieve low on-resistance per die area while maintaining rugged avalanche capability (EAS = 47 mJ). Its gate threshold voltage (VGS(th) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V gate drive, and its 3.1 nC gate-source charge enables efficient control with minimal driver loss.
Thermal design is supported by RthJC = 3.5 °C/W (junction-to-case) and RthJA = 40 °C/W (PCB mount), enabling stable operation up to 175 °C. The integrated body diode exhibits VSD = 1.6 V at 10 A and controlled reverse recovery (Qrr = 200–400 μC), critical for synchronous rectification and inductive load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V bus systems with margin against transients |
| RDS(on) @ VGS = 10 V | 0.20 Ω - Enables ≤2 W conduction loss at 10 A continuous drain current |
| ID (continuous, TC = 25 °C) | 10 A - Sustains full-rated current with heatsink or PCB copper area |
| Qg (total) | 11 nC - Determines gate driver power requirement and switching speed in hard-switched topologies |
| trr (body diode) | 70–140 ns - Limits reverse recovery losses during commutation in buck or half-bridge circuits |
| PD (TC = 25 °C) | 43 W - Specifies maximum dissipation with case temperature maintained at 25 °C |
| TJ max | 175 °C - Allows operation in high-ambient environments such as enclosed industrial enclosures |
Pinout & Package
I2PAK (TO-262) through-hole package with isolated tab (drain-connected), low-profile 13.46 mm height, and 3-pin configuration optimized for manual assembly and thermal relief on thick copper PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≥10 V drive for full enhancement; gate leakage ≤ ±100 nA |
| 2 (D) | Drain | Main power output; electrically connected to exposed tab; must be isolated from heatsink unless referenced to same potential |
| 3 (S) | Source | Power return path; defines ground reference for gate drive; carries full load current and body diode forward current |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile through-hole mounting | Enables compact vertical assembly in space-constrained power modules without surface-mount reflow infrastructure |
| 175 °C maximum junction temperature | Supports extended thermal derating in sealed enclosures or high-ambient industrial environments |
| Fast switching with 10 ns turn-on delay | Reduces transition losses in PWM frequencies up to 200 kHz for improved efficiency in SMPS designs |
| Unclamped inductive switching rating | Withstands 47 mJ single-pulse avalanche energy, eliminating need for external snubbers in relay or solenoid drive |
| Integrated body diode with controlled Qrr | Enables use in freewheeling paths without external Schottky diodes in low-frequency (<50 kHz) applications |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 10 A output. IC Role / Device Role / Timing Role: Main power switch controlling duty cycle via PWM; handles both conduction and switching phases. Use Value: RDS(on) = 0.20 Ω minimizes I²R losses at full load, while trr < 140 ns prevents shoot-through in synchronous configurations. |
Use Scenario: H-bridge driver for 24 V brushed motors in industrial actuators or HVAC dampers. IC Role / Device Role / Timing Role: Low-side or high-side switching element; operates in linear or saturated mode depending on control strategy. Use Value: 10 A continuous rating supports peak stall currents; 175 °C rating accommodates intermittent overload without thermal shutdown. |
| AC-DC Auxiliary Power Supply | Industrial Relay/Solenoid Driver |
Use Scenario: Off-line flyback auxiliary supply powering control circuitry in industrial PLCs. IC Role / Device Role / Timing Role: Primary-side switch operating at 65–100 kHz; subjected to repetitive voltage spikes and thermal cycling. Use Value: EAS = 47 mJ allows safe clamping of transformer leakage energy without external TVS, reducing BOM count. |
Use Scenario: Solid-state replacement for electromechanical relays driving 24 V/5 A solenoids in factory automation. IC Role / Device Role / Timing Role: Unclamped inductive load switch; must absorb stored magnetic energy during turn-off. Use Value: Avalanche-rated operation eliminates need for freewheeling diode in cost-sensitive designs where layout space is limited. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFZ24L | RDS(on) = 0.07 Ω @ 10 V (lower), ID = 17 A (higher), same I2PAK package | Better conduction efficiency at >5 A; higher gate charge (24 nC) increases driver demand | Select when lower RDS(on) justifies increased gate drive complexity and cost |
| STP10NK60ZFP | 600 V VDS, RDS(on) = 0.73 Ω @ 10 V, TO-220FP package, Zener-protected gate | Higher voltage rating suits universal input AC-DC; higher RDS(on) limits use to <3 A continuous | Choose for mains-referenced primary switches where 60 V rating is insufficient |
Compared with IRFZ14L, IRFZ24L offers significantly lower conduction loss but demands more gate drive energy, while STP10NK60ZFP trades voltage headroom and ruggedness for reduced system-level transient protection requirements - neither is pin-compatible, requiring layout revision.
Availability
IRFZ14L is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and relay/solenoid control applications requiring stable component supply across multi-year production cycles.
Supply support for IRFZ14L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFZ14L belongs to Vishay's legacy silicon power MOSFET family designed for cost-effective, thermally robust switching in medium-power industrial equipment where reliability under sustained thermal stress is critical.
FAQ
What is the maximum continuous drain current for IRFZ14L at 100 °C case temperature?
The IRFZ14L supports 7.2 A continuous drain current at TC = 100 °C, reflecting its linear derating factor of 0.29 W/°C from the 43 W maximum power dissipation at 25 °C. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 90365 and applies under steady-state thermal conditions with adequate PCB copper or heatsinking. Designers must verify actual case temperature in situ using thermal simulation or measurement before finalizing layout for IRFZ14L.
Does IRFZ14L have avalanche energy rating, and how is it specified?
Yes, IRFZ14L is rated for single-pulse unclamped inductive switching with EAS = 47 mJ, measured under VDD = 25 V, starting TJ = 25 °C, L = 548 μH, Rg = 25 Ω, and IAS = 10 A per Figure 12 in the datasheet. This rating validates safe operation during inductive turn-off without external snubbers in applications like solenoid or relay driving. The IRFZ14L datasheet does not specify repetitive avalanche capability, so repeated inductive switching must remain within SOA limits.
What is the gate threshold voltage range for IRFZ14L, and how does it affect drive compatibility?
The gate threshold voltage VGS(th) for IRFZ14L is specified as 2.0–4.0 V at ID = 250 μA, meaning it reliably turns on with standard 5 V logic-level signals but achieves full enhancement only above ~10 V. At VGS = 10 V, RDS(on) reaches its rated 0.20 Ω. Using 5 V drive yields higher on-resistance (~0.45 Ω typical), increasing conduction loss - thus IRFZ14L is best paired with 10 V gate drivers in high-efficiency designs.
Is IRFZ14L RoHS-compliant, and what packaging options are available?
IRFZ14L is offered in lead (Pb)-free and halogen-free versions (e.g., SiHFZ14L-GE3) per Vishay's material categorization policy. The "-GE3" suffix indicates RoHS-compliant, matte tin-plated leads and green molding compound. Legacy Pb-bearing variants (e.g., IRFZ14LPbF) are discontinued per EU RoHS Directive. All IRFZ14L ordering codes comply with JEDEC standards for I2PAK (TO-262) mechanical and thermal specifications.
How does the body diode performance of IRFZ14L compare to discrete Schottky diodes in freewheeling applications?
The IRFZ14L body diode has VSD = 1.6 V at 10 A and trr = 70–140 ns, making it suitable for low-frequency (<50 kHz) freewheeling where Schottky diode cost or layout area is prohibitive. However, its forward voltage is higher than typical 0.4–0.6 V Schottky devices, increasing conduction loss. For high-frequency or high-efficiency designs, an external Schottky remains preferable - the IRFZ14L body diode serves best as a rugged, integrated backup rather than primary rectifier.
IRFZ14L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 200mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262-3
IRFZ14L FAQ
1.How can I place an order for IRFZ14L through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ14L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ14L reliable?
The price and inventory of IRFZ14L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ14L is usually 5 days.
3.What payment methods are accepted for IRFZ14L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ14L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ14L?
IRFZ14L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ14L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ14L?
For technical support, including IRFZ14L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ14L requirements.
6.How does Aetrix verify that IRFZ14L is sourced from the original manufacturer or authorized distributors?
All IRFZ14L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ14L meets industry standards.
7.What is the process for return or replacement of IRFZ14L?
All IRFZ14L units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ14L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ14L part is unused and in its original packaging.
Return procedure for IRFZ14L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFZ14L Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
