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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ14PBF-BE3

Name: IRFZ14PBF-BE3
Brand: Vishay Siliconix
SKU: IRFZ14PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ14PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFZ14PBF-BE3.pdf

Description:: MOSFET N-CH 60V 10A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ14PBF-BE3 from Vishay Siliconix is a 60 V, 10 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature - optimized for medium-power switching in DC-DC converters, motor drives, and power supplies.

For engineers reviewing the IRFZ14PBF-BE3 datasheet, IRFZ14PBF-BE3 pinout, IRFZ14PBF-BE3 application, or IRFZ14PBF-BE3 equivalent, key selection criteria include its avalanche-rated ruggedness (47 mJ E_AS), fast switching (10 ns t_d(on), 19 ns t_f), low gate drive requirements, and RoHS-compliant/halogen-free construction per Vishay S21-1045-Rev. D.

Technical Context

The IRFZ14PBF-BE3 employs third-generation planar V-groove silicon technology to deliver low conduction loss and robust unclamped inductive switching capability. Its dynamic dV/dt rating of 4.5 V/ns and body diode reverse recovery time of 70–140 ns support reliable operation in hard-switched topologies with moderate voltage transients.

Designed for single-ended configurations, it integrates a co-packaged intrinsic body diode rated for 10 A continuous source-drain current and 40 A pulsed current, with V_SD = 1.6 V at T_J = 25 °C and I_S = 10 A - enabling synchronous rectification and freewheeling without external diodes in many applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V bus systems with 20 % margin against transients
R_DS(on) @ V_GS = 10 V	0.20 Ω - enables ≤2 W conduction loss at 10 A DC, suitable for <50 W dissipation
Q_g	11 nC - allows efficient gate driving with standard logic-level or dedicated MOSFET drivers
E_AS	47 mJ - provides single-pulse avalanche energy handling without external snubbers
T_J(max)	+175 °C - ensures reliability in thermally constrained industrial enclosures
R_thJC	3.5 °C/W - enables direct heatsink mounting for thermal management up to 43 W P_D

Pinout & Package

Package: TO-220AB - industry-standard through-hole power package with isolated drain tab, 3.5 °C/W junction-to-case thermal resistance, and mechanical mounting via M3/6-32 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 0–10 V logic-level signal; 3.1 nC Q_gs enables fast turn-on with minimal driver effort
D (Drain)	High-side power terminal	Connected to load supply rail; electrically tied to metal tab for heatsinking
S (Source)	Power return / reference node	Serves as common return path for load current and gate drive reference; internal source inductance = 7.5 nH

Key Features

Feature	Design Value
Dynamic dV/dt rating	4.5 V/ns - suppresses false turn-on during high-slew-rate voltage transients
Fast switching performance	10 ns turn-on delay + 19 ns fall time - reduces switching losses in 100 kHz–500 kHz SMPS
Low gate charge (Q_g)	11 nC - lowers driver power consumption and simplifies gate drive circuit design
Ruggedized device design	47 mJ unclamped inductive energy rating - eliminates need for external clamping in flyback or buck converters

Applications

DC-DC Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 48 V to 12 V/5 V in industrial control modules. IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz with PWM duty cycle control. Use Value: 0.20 Ω R_DS(on) limits conduction loss to <2.0 W at 10 A, while 11 nC Q_g enables clean 10 ns–19 ns transitions.	Use Scenario: H-bridge half-bridge leg for bidirectional 24 V brushed motor control in automation actuators. IC Role / Device Role / Timing Role: Low-side switching element commutating motor current with integrated body diode freewheeling. Use Value: 10 A continuous ID and 1.6 V V_SD ensure efficient recirculation; 175 °C T_J(max) sustains operation under stall conditions.
AC-DC Auxiliary Supply	LED Constant-Current Driver
Use Scenario: Discrete switch in offline flyback auxiliary winding regulator for 5 V bias supply. IC Role / Device Role / Timing Role: Primary-side switch subjected to unclamped inductive stress during MOSFET turn-off. Use Value: 47 mJ E_AS withstands energy stored in transformer leakage inductance without failure.	Use Scenario: High-side switch controlling constant-current LED string in architectural lighting fixtures. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator with thermal foldback protection. Use Value: TO-220AB package enables direct PCB heatsinking; 3.5 °C/W R_thJC maintains safe T_J at 10 A peak pulses.

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V to 12 V/5 V in industrial control modules.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250 kHz with PWM duty cycle control.

Use Value: 0.20 Ω R_DS(on) limits conduction loss to <2.0 W at 10 A, while 11 nC Q_g enables clean 10 ns–19 ns transitions.

Use Scenario: H-bridge half-bridge leg for bidirectional 24 V brushed motor control in automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element commutating motor current with integrated body diode freewheeling.

Use Value: 10 A continuous ID and 1.6 V V_SD ensure efficient recirculation; 175 °C T_J(max) sustains operation under stall conditions.

AC-DC Auxiliary Supply

LED Constant-Current Driver

Use Scenario: Discrete switch in offline flyback auxiliary winding regulator for 5 V bias supply.

IC Role / Device Role / Timing Role: Primary-side switch subjected to unclamped inductive stress during MOSFET turn-off.

Use Value: 47 mJ E_AS withstands energy stored in transformer leakage inductance without failure.

Use Scenario: High-side switch controlling constant-current LED string in architectural lighting fixtures.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator with thermal foldback protection.

Use Value: TO-220AB package enables direct PCB heatsinking; 3.5 °C/W R_thJC maintains safe T_J at 10 A peak pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	60 V, 60 A, R_DS(on) = 0.018 Ω, Q_g = 85 nC, TO-220FP	Higher current rating but larger gate charge; requires stronger driver	Preferred where higher continuous current (>15 A) and lower R_DS(on) are critical; not drop-in due to layout and drive changes
IRFZ24NPBF	55 V, 17 A, R_DS(on) = 0.075 Ω, Q_g = 21 nC, TO-220AB	Lower V_DS, higher ID, higher Q_g; same package footprint	Drop-in replacement only if system operates ≤45 V; higher gate charge increases driver loss

Compared with STP60NF06 and IRFZ24NPBF, the IRFZ14PBF-BE3 offers optimal balance of gate drive simplicity (11 nC), thermal robustness (175 °C), and cost-effective 10 A switching - making it ideal for space-constrained, medium-power designs where driver strength and board area are limiting factors.

Availability

IRFZ14PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and LED drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant/halogen-free manufacturing.

Supply support for IRFZ14PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability across industrial, automotive, and computing markets.

The IRFZ14PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered specifically for cost-sensitive, medium-power switching applications demanding fast turn-on, low gate charge, and proven avalanche capability without external protection.

FAQ

What is the maximum continuous drain current rating for IRFZ14PBF-BE3 at 100 °C case temperature?

The IRFZ14PBF-BE3 has a maximum continuous drain current (I_D) of 7.2 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be verified against actual board-level thermal design using R_thJC = 3.5 °C/W and ambient conditions. The IRFZ14PBF-BE3 remains fully functional within this limit when properly heatsinked.

Does IRFZ14PBF-BE3 support logic-level gate drive?

No - the IRFZ14PBF-BE3 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, and full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) = 0.20 Ω. It is incompatible with 3.3 V or 5 V microcontroller outputs without level-shifting or gate driver amplification. The IRFZ14PBF-BE3 is designed for standard 10 V gate drive systems.

What is the body diode reverse recovery time (t_rr) of IRFZ14PBF-BE3, and how does it affect switching performance?

The IRFZ14PBF-BE3 body diode exhibits t_rr = 70–140 ns at T_J = 25 °C, I_F = 10 A, and dI/dt = 100 A/μs. This relatively fast recovery minimizes cross-conduction losses in half-bridge or synchronous rectifier configurations. When used in freewheeling paths, the IRFZ14PBF-BE3's t_rr supports efficient operation up to ~200 kHz before reverse recovery losses dominate.

Can IRFZ14PBF-BE3 be paralleled with identical units for higher current handling?

Yes - the IRFZ14PBF-BE3 is explicitly characterized for ease of paralleling due to its positive temperature coefficient of R_DS(on) (confirmed by normalized on-resistance vs. temperature curve). Matching gate resistors and symmetrical PCB layout are required to ensure current sharing. The IRFZ14PBF-BE3's low Q_gd/Q_gs ratio (5.8/3.1) further enhances dynamic current balance during switching transitions.

Is IRFZ14PBF-BE3 suitable for avalanche energy handling in inductive load switching?

Yes - the IRFZ14PBF-BE3 is rated for 47 mJ single-pulse avalanche energy (E_AS) under defined test conditions (V_DD = 25 V, I_AS = 8 A). This capability allows safe operation in unclamped inductive switching events such as relay coil de-energization or flyback transformer reset. The IRFZ14PBF-BE3's ruggedized die design ensures repeatable avalanche performance without degradation when operated within datasheet limits.

IRFZ14PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 200mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFZ14PBF-BE3 FAQ

1.How can I place an order for IRFZ14PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ14PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ14PBF-BE3 reliable?

The price and inventory of IRFZ14PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ14PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFZ14PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ14PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ14PBF-BE3?

IRFZ14PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ14PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ14PBF-BE3?

For technical support, including IRFZ14PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ14PBF-BE3 requirements.

6.How does Aetrix verify that IRFZ14PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFZ14PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ14PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFZ14PBF-BE3?

All IRFZ14PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ14PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ14PBF-BE3 part is unused and in its original packaging.

Return procedure for IRFZ14PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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