Vishay Siliconix IRFZ14S

Overview

IRFZ14S from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V drain-source voltage, 10 A continuous drain current at 25 °C, and 0.20 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching with 11 nC total gate charge and supports high-temperature operation up to 175 °C, making it suitable for DC-DC converters and motor drive half-bridge stages.

For engineers reviewing the IRFZ14S datasheet, IRFZ14S pinout, IRFZ14S application, or IRFZ14S equivalent, this page provides verified package mapping, validated thermal and dynamic parameters, confirmed body diode performance (V_SD = 1.6 V, t_rr = 70–140 ns), and real-world selection guidance against functionally aligned alternatives.

Technical Context

This MOSFET employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining rugged avalanche capability (E_AS = 47 mJ). Its D2PAK package enables high-power PCB mounting with 3.5 °C/W junction-to-case thermal resistance and 43 W maximum power dissipation at T_C = 25 °C.

The device features a built-in body diode with 10 A continuous source-drain current rating, 1.6 V forward voltage at 10 A, and controlled reverse recovery (Q_rr = 200–400 μC), supporting synchronous rectification and inductive load switching without external freewheeling diodes.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad (Pin 2), standard 3-pin configuration, and JEDEC-compliant outline. Thermal pad must be soldered to large copper area for rated power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and SiHFZ14S, the IRFZ14S offers optimal balance of SMT compatibility, 10 A rating, and thermal performance in D2PAK-making it preferred for space-constrained 48 V systems where 60 A capacity is unnecessary and RoHS exemption applies.

Availability

IRFZ14S is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED current regulators, and power OR-ing circuits requiring stable component supply across industrial and telecom production cycles.

Supply support for IRFZ14S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFZ14S belongs to Vishay's third-generation power MOSFET family engineered for low R_DS(on), fast switching, and rugged avalanche performance in surface-mount power conversion and motor control applications.

FAQ

What is the maximum continuous drain current rating for IRFZ14S at 100 °C case temperature?

The IRFZ14S supports 7.2 A continuous drain current at T_C = 100 °C, reflecting linear derating from 10 A at 25 °C using the specified 0.29 W/°C thermal factor. This value is critical for thermal design validation in enclosed or high-ambient environments where case temperature exceeds 25 °C. Always verify actual T_C with IRFZ14S mounted on the target PCB layout before finalizing heatsink requirements.

Does IRFZ14S have a built-in body diode, and what are its key parameters?

Yes, the IRFZ14S integrates a monolithic body diode with 10 A continuous forward current rating, 1.6 V forward voltage at 10 A and 25 °C, and reverse recovery time of 70–140 ns. Its Q_rr is 200–400 μC, enabling use in freewheeling and synchronous rectification roles without external diodes. These values are measured under standardized conditions (T_J = 25 °C, I_F = 10 A, di/dt = 100 A/μs) and must be validated in the final circuit.

What is the gate threshold voltage range for IRFZ14S, and how does it affect drive requirements?

The IRFZ14S has a gate-source threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This means the device begins conducting weakly near 2 V but requires ≥10 V gate drive to achieve its rated 0.20 Ω R_DS(on). Logic-level drivers (e.g., 3.3 V or 5 V) will not fully enhance the IRFZ14S; a dedicated 10–15 V gate driver is necessary to minimize conduction loss and ensure robust switching in power applications.

Can IRFZ14S be used in avalanche mode, and what is its rated energy?

Yes, the IRFZ14S is rated for repetitive unclamped inductive switching with a single-pulse avalanche energy (E_AS) of 47 mJ under defined test conditions (V_DD = 25 V, I_AS = 10 A, T_J = 25 °C). This capability allows safe operation during transient overcurrent events in motor drives or relay snubbing, provided pulse width and duty cycle remain within limits specified in Figure 11 of the datasheet. Continuous avalanche is not supported.

What is the thermal resistance from junction to case (R_thJC) for IRFZ14S, and how should it be applied in layout?

The IRFZ14S has a maximum junction-to-case thermal resistance (R_thJC) of 3.5 °C/W, measured from die to the exposed drain pad. To achieve this rating, the D2PAK's thermal pad must be soldered to ≥1"² of 2-oz copper on FR-4 PCB with ≥6 thermal vias to inner ground planes. Layouts omitting this copper area or using insufficient vias will degrade thermal performance and may exceed 175 °C junction temperature under full load.