Vishay Siliconix IRFZ14SPBF

Overview

IRFZ14SPBF from Vishay Siliconix is a 60 V, 10 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.20 Ω R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature. It serves as a high-efficiency switching element in DC-DC converters, motor drivers, and power supply synchronous rectification stages.

For engineers reviewing the IRFZ14SPBF datasheet, IRFZ14SPBF pinout, IRFZ14SPBF application, or IRFZ14SPBF equivalent, key selection criteria include its low on-resistance for reduced conduction loss, fast switching (10 ns turn-on delay, 19 ns fall time), avalanche ruggedness (47 mJ E_AS), and thermal capability for high-power-density board designs.

Technical Context

This third-generation power MOSFET uses advanced silicon processing to minimize R_DS(on) per die area while maintaining robust avalanche performance and fast switching dynamics. Its D2PAK package enables high-current handling with low thermal resistance (R_thJC = 3.5 °C/W) and PCB-mount power dissipation up to 3.7 W.

The device integrates a fast-recovery body diode (t_rr = 70–140 ns, Q_rr = 200–400 μC) and supports gate drive at standard 10 V logic levels. Its ±20 V V_GS rating and 2.0–4.0 V V_GS(th) ensure reliable enhancement-mode operation across industrial temperature ranges.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Dimensions: 10.67 mm × 9.65 mm × 4.83 mm (L × W × H); thermal pad area optimized for 1"² FR-4 PCB mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ14SPBF, SiHFZ14S-GE3 offers identical electrical and thermal performance with environmental compliance, while IRFZ44NPbF trades higher conduction loss and gate drive demand for legacy through-hole compatibility - making IRFZ14SPBF optimal for high-efficiency, surface-mount power stages.

Availability

IRFZ14SPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control modules, and LED driver circuits requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRFZ14SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency devices.

The IRFZ14SPBF belongs to Vishay's third-generation power MOSFET family, engineered for high-current, high-frequency switching in industrial and telecom power systems where low R_DS(on), fast switching, and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current for IRFZ14SPBF at 100 °C case temperature?

The IRFZ14SPBF supports 7.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under real-world PCB-mount conditions and must be verified against actual board layout and airflow in the final design. The IRFZ14SPBF maintains safe operation within its SOA curve up to this current level when properly heatsinked.

Does IRFZ14SPBF have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRFZ14SPBF integrates a monolithic body diode with t_rr = 70–140 ns and Q_rr = 200–400 μC at T_J = 25 °C. These values enable efficient freewheeling in half-bridge and synchronous rectifier topologies. The IRFZ14SPBF body diode exhibits low V_SD (1.6 V at 10 A) and controlled dv/dt immunity (4.5 V/ns), reducing EMI and cross-conduction risk during commutation.

Can IRFZ14SPBF be driven directly by a 3.3 V microcontroller GPIO?

No - the IRFZ14SPBF has a V_GS(th) range of 2.0–4.0 V and requires ≥10 V gate drive for full enhancement and minimal R_DS(on). A 3.3 V signal yields high on-resistance (>1 Ω) and excessive conduction loss. To use the IRFZ14SPBF with a 3.3 V controller, a gate driver IC (e.g., TC4427) or level-shifting circuit is required. The IRFZ14SPBF is not a logic-level MOSFET.

What is the thermal resistance from junction to case (R_thJC) for IRFZ14SPBF, and how does it impact heatsinking?

The IRFZ14SPBF has a maximum R_thJC of 3.5 °C/W, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to an external heatsink or copper pour. For example, with a 10 °C/W heatsink and 1.5 W power dissipation, junction temperature rise is only ~53 °C above ambient - well within the 175 °C limit. Proper soldering of the thermal pad per AN826 is essential to achieve this R_thJC.

Is IRFZ14SPBF suitable for avalanche-rated applications such as relay or solenoid driving?

Yes - the IRFZ14SPBF is fully specified for repetitive avalanche operation with E_AS = 47 mJ (single-pulse) and validated per Fig. 12c in the datasheet. It safely clamps inductive energy during turn-off without external components in applications like DC solenoid control or relay switching. However, repeated operation near E_AS limit requires thermal monitoring, as each avalanche event contributes to junction heating. The IRFZ14SPBF's ruggedized die design ensures reliability under these conditions when operated within SOA boundaries.