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Vishay Siliconix IRFZ14STRLPBF

Part No.:
IRFZ14STRLPBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRFZ14STRLPBF.pdf
Description:
MOSFET N-CH 60V 10A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,064

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Product details

Overview

IRFZ14STRLPBF from Vishay Siliconix is a 60 V, 10 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature - designed for high-efficiency DC-DC converters, motor drives, and power supply switching stages.

For engineers reviewing the IRFZ14STRLPBF datasheet, IRFZ14STRLPBF pinout, IRFZ14STRLPBF application, or IRFZ14STRLPBF equivalent, key selection criteria include its low on-resistance under 10 V gate drive, fast switching performance (10 ns turn-on delay, 19 ns fall time), avalanche energy rating (47 mJ), thermal robustness, and D2PAK PCB-mount power dissipation capability (3.7 W).

Technical Context

This third-generation power MOSFET employs advanced silicon processing to minimize RDS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) supports standard logic-level drive, and its body diode exhibits 70–140 ns reverse recovery time with 200–400 μC Qrr.

The device operates within -55 °C to +175 °C junction range and delivers 43 W maximum power dissipation at TC = 25 °C. Thermal resistance from junction-to-case is 3.5 °C/W, enabling effective heatsinking via the exposed drain pad in D2PAK mounting.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum blocking voltage suitable for 48 V bus and industrial power rails
RDS(on) @ VGS = 10 V 0.20 Ω - Enables <1.2 W conduction loss at 6 A continuous drain current
Qg (total) 11 nC - Low gate charge reduces driver power demand and switching losses in high-frequency operation
ID (continuous, TC = 25 °C) 10 A - Supports medium-power load switching without forced air cooling
EAS 47 mJ - Rated single-pulse avalanche energy allows reliable operation under inductive turn-off stress
TJ max +175 °C - Enables use in high-ambient environments such as automotive engine compartments or enclosed industrial enclosures
RthJC 3.5 °C/W - Efficient thermal path from die to heatsink via D2PAK drain tab

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-pin configuration (G, D, S) with standard leadframe layout optimized for PCB copper pour attachment.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control terminal Receives 10 V logic-level signal to fully enhance channel; 3.1 nC Qgs enables fast turn-on with low driver current
D (Drain) High-side power output Connected to exposed metal tab; serves as primary heat transfer path and high-current output node
S (Source) Power return / reference Common return for load current and gate drive reference; internal source inductance 7.5 nH affects high-di/dt ringing

Key Features

Feature Design Value
Advanced process technology Enables 0.20 Ω RDS(on) in D2PAK - 25% lower than prior-gen equivalents at same die size
175 °C operating temperature Supports extended lifetime in thermally constrained designs without derating below 100 °C ambient
Fast switching speed 10 ns td(on), 19 ns tf - Reduces transition losses in 100–500 kHz SMPS applications
Ruggedized device design 47 mJ EAS and 40 A IDM - Withstands repetitive inductive switching without snubber circuits
Surface-mount (D2PAK) Enables automated assembly and high-power density layouts with 3.7 W PCB-mount dissipation

Applications

DC-DC Buck Converter Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V input to 12 V/5 V outputs in telecom power supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 250–500 kHz PWM frequency.

Use Value: 0.20 Ω RDS(on) minimizes conduction loss; 11 nC Qg ensures low gate drive loss and clean edge integrity.

Use Scenario: H-bridge control of 24 V, 5–8 A brushed motors in industrial actuators and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and freewheeling diode conduction.

Use Value: Body diode VSD = 1.6 V at 10 A enables efficient flyback path; 70–140 ns trr limits commutation loss during direction reversal.

AC-DC Secondary-Side Sync Rectifier Industrial PLC Output Module

Use Scenario: Replacement for Schottky diodes in 24–48 V secondary-side rectification of offline SMPS.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by external timing circuit or controller IC.

Use Value: RDS(on) < 0.20 Ω yields >2 % efficiency gain over 40 V Schottky at 6 A; 175 °C rating accommodates sealed enclosure operation.

Use Scenario: Solid-state replacement for electromechanical relays in programmable logic controller digital output cards.

IC Role / Device Role / Timing Role: Load-switching transistor driving solenoids, indicator lamps, or small contactors.

Use Value: 40 A pulsed drain current (IDM) handles inrush of inductive loads; avalanche rating eliminates need for external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP10NK60ZFP 600 V VDS, 10 A, RDS(on) = 0.75 Ω - higher voltage rating but 3.75× higher on-resistance Better suited for universal-input PFC or flyback primary side; not optimal for low-voltage, high-current switching Select when >400 V blocking is required; avoid for 48 V systems where conduction loss dominates
IRFZ44NPBF 55 V VDS, 49 A, RDS(on) = 0.028 Ω - higher current, lower RDS(on), TO-220 package Requires through-hole assembly and larger heatsink; unsuitable for space-constrained SMT designs Choose for higher-current, lower-loss needs where D2PAK footprint and reflow compatibility are not mandatory

Compared with STP10NK60ZFP and IRFZ44NPBF, the IRFZ14STRLPBF offers the optimal balance of 60 V rating, D2PAK SMT compatibility, 0.20 Ω on-resistance, and 10 A continuous current - making it uniquely suited for compact, medium-power industrial and telecom power stages where board space and thermal management are co-constrained.

Availability

IRFZ14STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and industrial PLC output modules requiring stable component supply, long-term manufacturing continuity, and RoHS-compliant surface-mount packaging.

Supply support for IRFZ14STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFZ14STRLPBF belongs to Vishay's third-generation power MOSFET family engineered for low RDS(on), fast switching, and rugged avalanche performance in surface-mount power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for IRFZ14STRLPBF at 100 °C case temperature?

The IRFZ14STRLPBF supports 7.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual PCB layout and heatsinking. The full 10 A rating applies only at TC = 25 °C. Designers should consult Fig. 9 (Maximum Drain Current vs. Case Temperature) in the IRFZ14STRLPBF datasheet for precise derating curves.

Does IRFZ14STRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFZ14STRLPBF integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include 10 A continuous forward current (IS), 40 A pulsed rating (ISM), 1.6 V forward voltage (VSD) at 10 A and 25 °C, and 70–140 ns reverse recovery time (trr). These values are confirmed in the "Drain-Source Body Diode Characteristics" section of the IRFZ14STRLPBF datasheet.

Is IRFZ14STRLPBF RoHS-compliant and halogen-free?

Yes, IRFZ14STRLPBF is RoHS-compliant and halogen-free, as indicated by the "-TRLPbF" suffix and confirmed in Vishay's ordering information table. It meets JEDEC J-STD-609A Class 1 for moisture sensitivity and complies with EU Directive 2011/65/EU. Full compliance documentation, including material declarations, is available via Vishay's website using document number 90365.

What is the gate threshold voltage range for IRFZ14STRLPBF, and how does it affect drive requirements?

The IRFZ14STRLPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA, per the Specifications table. This allows reliable enhancement with standard 5 V or 3.3 V logic-level drivers, though full RDS(on) performance requires VGS ≥ 10 V. The relatively wide threshold window necessitates careful gate drive design to ensure consistent turn-on across temperature and unit variation.

Can IRFZ14STRLPBF be used in avalanche-mode operation, and what is its rated energy?

Yes, the IRFZ14STRLPBF is rated for single-pulse avalanche operation with EAS = 47 mJ under defined test conditions (VDD = 25 V, IAS = 10 A, TJ = 25 °C). This rating is validated per Fig. 12 and Table 1 in the IRFZ14STRLPBF datasheet. Repetitive avalanche is not guaranteed and requires system-level validation of pulse width, duty cycle, and thermal limits.

IRFZ14STRLPBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK

IRFZ14STRLPBF FAQ

1.How can I place an order for IRFZ14STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ14STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ14STRLPBF reliable?

The price and inventory of IRFZ14STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ14STRLPBF is usually 5 days.

3.What payment methods are accepted for IRFZ14STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ14STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ14STRLPBF?

IRFZ14STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ14STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ14STRLPBF?

For technical support, including IRFZ14STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ14STRLPBF requirements.

6.How does Aetrix verify that IRFZ14STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ14STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ14STRLPBF meets industry standards.

7.What is the process for return or replacement of IRFZ14STRLPBF?

All IRFZ14STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ14STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ14STRLPBF part is unused and in its original packaging.

Return procedure for IRFZ14STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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