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Vishay Siliconix IRFZ14STRR

Part No.:
IRFZ14STRR
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRFZ14STRR.pdf
Description:
MOSFET N-CH 60V 10A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,041

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Product details

Overview

IRFZ14STRR from Vishay Siliconix is a 60 V, 10 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.20 Ω RDS(on) at VGS = 10 V, 11 nC total gate charge, and 175 °C maximum junction temperature - designed for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFZ14STRR datasheet, IRFZ14STRR pinout, IRFZ14STRR application, or IRFZ14STRR equivalent, this part supports fast-switching, high-current switching in compact PCB layouts where thermal robustness and avalanche energy rating (47 mJ) are critical selection criteria.

Technical Context

This MOSFET employs third-generation silicon process technology to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage range (2.0–4.0 V) ensures compatibility with standard 5 V and 10 V logic-level drivers.

The device integrates a fast-recovery body diode (trr = 70–140 ns, Qrr = 200–400 μC) and exhibits low output capacitance (Coss = 160 pF) and reverse transfer capacitance (Crss = 29 pF), enabling efficient high-frequency operation up to several hundred kHz.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - supports 48 V bus systems with 20 % margin against transients
RDS(on) @ VGS = 10 V0.20 Ω - enables ≤1.2 W conduction loss at 7.2 A continuous current
Qg max11 nC - determines gate drive power requirement and switching speed scalability
ID continuous @ TC = 100 °C7.2 A - defines usable current in thermally constrained surface-mount applications
EAS47 mJ - quantifies single-pulse avalanche robustness during inductive turn-off
tr/tf50 ns / 19 ns - enables <500 kHz PWM operation with minimal switching loss
TJ max175 °C - allows operation in high-ambient industrial environments without derating

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal conduction and mechanical anchoring. Standard 3-pin configuration: Gate (pin 1), Drain (tab/thermal pad), Source (pins 2 & 3 tied internally).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal requiring ≤±20 V drive; 3.1 nC Qgs sets Miller plateau duration
Tab (Drain)DrainHigh-current output node and primary thermal path; electrically connected to PCB copper pour
Pins 2 & 3SourcePower return and reference for gate drive; dual pins reduce bond-wire inductance and improve current sharing

Key Features

FeatureDesign Value
Low RDS(on) per areaEnables smaller die size or higher current density vs. prior-gen MOSFETs at same voltage rating
Fast switching with low Qgd/Qg ratio5.8 nC / 11 nC = 53 % - reduces Miller-induced switching delay and improves hard-switching efficiency
175 °C rated junctionSupports extended lifetime in sealed enclosures or high-ambient automotive under-hood zones
47 mJ unclamped avalanche energyAllows safe operation in inductive loads without external snubbers in moderate-energy circuits
Body diode trr < 140 nsMinimizes reverse recovery losses in synchronous rectification and H-bridge freewheeling

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V input to 12 V/5 V outputs in telecom power supplies.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 250–500 kHz with forced CCM mode.

Use Value: 0.20 Ω RDS(on) limits conduction loss to <1.5 W at 7 A, while 11 nC Qg enables clean 50 ns rise time with 1 Ω gate resistor.

Use Scenario: Full-H-bridge control of 24 V, 5 A brushed motors in industrial actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current and body-diode commutation.

Use Value: 70–140 ns body diode trr and 47 mJ EAS prevent shoot-through failure during direction reversal under load.

LED Constant-Current DriverAC-DC Secondary-Side Switch

Use Scenario: High-brightness LED string control in architectural lighting with PWM dimming.

IC Role / Device Role / Timing Role: Low-side current sink modulating 3–10 A LED current at 1–20 kHz.

Use Value: 10 A continuous rating at 100 °C case temperature ensures stable output across ambient ranges without active cooling.

Use Scenario: Synchronous rectifier in 36 W offline flyback adapter secondary side.

IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward drop and improve efficiency at light-to-full load.

Use Value: Body diode VSD = 1.6 V at 10 A enables lower conduction loss than 40 V Schottky, while low Coss (160 pF) minimizes ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP10NK60ZFP600 V rating, 0.72 Ω RDS(on), TO-220FP packageDesigned for high-voltage PFC and SMPS primary side, not low-voltage switchingSelect only when 600 V blocking and through-hole mounting are required
IRFZ44NPBF55 V VDS, 0.028 Ω RDS(on), TO-220 package, higher current (49 A)Higher conduction efficiency but larger footprint and lower thermal resistance via heatsinkPrefer for high-current, heatsink-mounted designs where board space permits

Compared with STP10NK60ZFP and IRFZ44NPBF, IRFZ14STRR offers optimal balance of 60 V rating, D2PAK thermal performance, and gate drive compatibility for space-constrained 48 V system switches - neither a direct replacement nor functionally identical, but a targeted solution for surface-mount medium-power switching.

Availability

IRFZ14STRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and synchronous rectifiers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFZ14STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, thermal performance, and application-specific optimization.

The IRFZ14STRR belongs to Vishay's third-generation power MOSFET family engineered for high-efficiency, high-density power conversion in industrial and telecom infrastructure - prioritizing low on-resistance, fast switching, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current for IRFZ14STRR at 100 °C case temperature?

The IRFZ14STRR supports 7.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation at elevated temperatures and must be validated against actual PCB layout and airflow conditions in the target application.

Does IRFZ14STRR have a built-in body diode, and what are its key parameters?

Yes, IRFZ14STRR integrates a parasitic body diode inherent to its N-channel MOSFET structure. Key parameters include 10 A continuous source-drain current, 40 A pulsed rating, 1.6 V forward voltage at 10 A and 25 °C, and reverse recovery time of 70–140 ns - critical for freewheeling and synchronous rectification behavior.

Is IRFZ14STRR RoHS-compliant and halogen-free?

Yes, IRFZ14STRR is lead (Pb)-free and halogen-free, conforming to Vishay's "GE3" material categorization. The part meets RoHS Directive 2011/65/EU and is marked accordingly in Vishay's ordering information tables - no Pb in terminations or packaging materials.

What is the thermal resistance from junction to case (RthJC) for IRFZ14STRR?

The maximum junction-to-case (drain) thermal resistance RthJC for IRFZ14STRR is 3.5 °C/W, measured from the silicon die to the D2PAK drain tab. This value assumes proper soldering to a minimum 1" × 1" FR-4 PCB copper pour and is essential for calculating worst-case junction temperature under load.

Can IRFZ14STRR be used as a direct replacement for IRFZ44N in existing designs?

No, IRFZ14STRR is not a direct replacement for IRFZ44N: it has higher RDS(on) (0.20 Ω vs. 0.028 Ω), lower current rating (10 A vs. 49 A), and D2PAK instead of TO-220 package. While both are 60 V N-channel MOSFETs, IRFZ14STRR targets surface-mount space savings over raw current capacity - redesign of gate drive, thermal layout, and current handling is required.

IRFZ14STRR Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
3.7W (Ta), 43W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRFZ14STRR FAQ

1.How can I place an order for IRFZ14STRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ14STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ14STRR reliable?

The price and inventory of IRFZ14STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ14STRR is usually 5 days.

3.What payment methods are accepted for IRFZ14STRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ14STRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ14STRR?

IRFZ14STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ14STRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ14STRR?

For technical support, including IRFZ14STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ14STRR requirements.

6.How does Aetrix verify that IRFZ14STRR is sourced from the original manufacturer or authorized distributors?

All IRFZ14STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ14STRR meets industry standards.

7.What is the process for return or replacement of IRFZ14STRR?

All IRFZ14STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ14STRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ14STRR part is unused and in its original packaging.

Return procedure for IRFZ14STRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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