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Vishay Siliconix IRFZ20PBF-BE3
- Part No.:
- IRFZ20PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ20PBF-BE3.pdf
- Description:
- MOSFET N-CH 50V 15A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:459
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Product details
Overview
IRFZ20PBF-BE3 from Vishay Siliconix is a 50 V, 15 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.10 Ω RDS(on) at VGS = 10 V, 17 nC total gate charge, and fast switching for low-loss DC-DC conversion and motor drive stages in battery-powered industrial and automotive systems.
For engineers reviewing the IRFZ20PBF-BE3 datasheet, IRFZ20PBF-BE3 pinout, IRFZ20PBF-BE3 application, or IRFZ20PBF-BE3 equivalent, key selection criteria include its 50 V drain-source rating, 0.10 Ω on-resistance at 10 V gate drive, 15 A continuous drain current at 25 °C, body diode recovery time under 100 ns, and compatibility with standard gate drivers in high-efficiency low-voltage switching circuits.
Technical Context
This discrete N-channel MOSFET uses planar silicon technology optimized for low RDS(on) and stable parametric performance across -55 °C to +150 °C junction temperature. Its gate threshold voltage (2.0–4.0 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers, while low Qgd/Qg ratio (3.0/17 nC) supports clean, fast switching transitions.
The device integrates a monolithic body diode with 1.5 V forward drop at 15 A and 100 ns reverse recovery time at 150 °C, enabling use in freewheeling and synchronous rectification roles without external diodes in chopper and inverter topologies operating up to 60 A pulsed drain current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Max | 50 V - Supports 24 V and 48 V nominal bus systems with margin for transients and inductive kickback |
| RDS(on) @ VGS=10 V | 0.10 Ω max - Delivers ≤1.5 W conduction loss at 12 A, enabling compact thermal design |
| ID Continuous @ TC=25 °C | 15 A - Sustains full-load current in motor H-bridge legs and SMPS primary switches |
| Qg Total | 17 nC max - Enables efficient driving with <1 mA average gate current at 100 kHz switching |
| trr Body Diode | <100 ns - Minimizes switching losses and voltage overshoot during hard commutation |
| PD @ TC=25 °C | 40 W - Allows direct heatsink mounting without forced air in space-constrained enclosures |
| TJ Range | -55 to +150 °C - Qualified for under-hood automotive and industrial ambient environments |
Pinout & Package
TO-220AB package with isolated tab (drain-connected), standard through-hole mounting, and 3.12 °C/W junction-to-case thermal resistance. Pin assignment verified per Vishay S21-1046 Rev. B mechanical drawing and schematic symbol.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives voltage-controlled signal; requires ≤500 nA leakage current and drives 17 nC gate capacitance |
| D (Drain) | High-side current path | Connected to heatsink tab; carries full load current and withstands 50 V blocking with 60 A pulsed capability |
| S (Source) | Reference node / return path | Serves as common reference for gate drive and current sensing; hosts body diode anode |
Key Features
| Feature | Design Value |
|---|---|
| Extremely low RDS(on) | 0.10 Ω at 10 V drive reduces conduction loss by >30% vs. legacy 50 V MOSFETs in same package |
| Fast switching | 30 ns turn-off delay + 30 ns fall time enables operation up to 500 kHz with minimal overlap loss |
| Low drive current | 17 nC Qg allows direct drive from microcontroller GPIO or low-power gate drivers without buffer stages |
| Ease of paralleling | Positive temperature coefficient of RDS(on) ensures self-balancing current sharing across multiple devices |
| Excellent temperature stability | RDS(on) increases only ~2× from 25 °C to 125 °C, preserving efficiency over full operating range |
Applications
| Automotive DC Motor Control | Industrial 24 V DC-DC Converter |
|---|---|
Use Scenario: Bidirectional 24 V brushed motor drive in power seats and HVAC actuators requiring PWM at 20 kHz. IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration handling 12 A continuous current with integrated body diode freewheeling. Use Value: 0.10 Ω RDS(on) limits I²R loss to 1.4 W at full load, reducing heatsink size and enabling sealed enclosure design. | Use Scenario: Primary-side synchronous rectifier in isolated 24 V input, 5 V/10 A output flyback converter. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 1.5 V body diode forward drop and 100 ns trr minimize reverse recovery loss and EMI generation during transition. |
| Portable Power Tool Inverter | Battery-Powered Audio Amplifier |
Use Scenario: Half-bridge inverter stage driving 18 V BLDC motor in cordless drills with peak currents up to 60 A. IC Role / Device Role / Timing Role: High-current switching element with pulsed drain rating supporting short-duration torque bursts. Use Value: 60 A IDM rating and 5 mJ single-pulse avalanche energy tolerate motor stall and inductive energy dump without failure. | Use Scenario: Output stage in Class-D audio amplifier powered from 12 V Li-ion battery pack. IC Role / Device Role / Timing Role: Fast-switching output transistor delivering high-fidelity PWM output with minimal dead-time distortion. Use Value: 15 ns turn-on delay and 45 ns rise time support >300 kHz carrier frequency, reducing audible switching noise and filter size. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 0.014 Ω RDS(on), TO-220FP package, logic-level gate (2.5 V VGS(th)) | Better suited for 36 V systems and lower gate drive voltage requirements | Select when higher voltage margin or 3.3 V MCU drive is needed; verify thermal derating due to smaller package footprint |
| IXTP12N50D2 | 500 V VDS, 0.55 Ω RDS(on), TO-220AB, ultrafast body diode (trr = 35 ns) | Targeted at high-voltage flyback and PFC where low RDS(on) is secondary to voltage rating | Choose only for ≥400 V applications; not suitable as direct replacement due to 5× higher on-resistance and different safe operating area |
Compared with STP55NF06L and IXTP12N50D2, IRFZ20PBF-BE3 delivers optimal balance of 50 V rating, 0.10 Ω on-resistance, and TO-220AB thermal performance for cost-sensitive 24–48 V industrial and automotive switching, avoiding over-specification in voltage or under-specification in conduction loss.
Availability
IRFZ20PBF-BE3 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC conversion, and portable power tool inverters requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFZ20PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, power efficiency, and ruggedized packaging.
The IRFZ20PBF-BE3 belongs to Vishay's legacy high-current, low-RDS(on) power MOSFET family designed specifically for high-efficiency switching in battery-operated and low-voltage industrial equipment.
FAQ
What is the maximum continuous drain current rating for IRFZ20PBF-BE3 at 100 °C case temperature?
The IRFZ20PBF-BE3 supports 10 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and ensures safe operation within the 150 °C maximum junction temperature limit. Designers must verify heatsink sizing using the 3.12 °C/W RthJC value to maintain this current rating under sustained load conditions. The IRFZ20PBF-BE3 maintains stable RDS(on) performance across this temperature range.
Does IRFZ20PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRFZ20PBF-BE3 integrates a monolithic body diode with 1.5 V forward voltage at 15 A and 100 ns reverse recovery time at 150 °C. Its Qrr is 0.4 μC, and it supports 15 A continuous source-drain current. These characteristics make the IRFZ20PBF-BE3 suitable for freewheeling and synchronous rectification without external diodes in chopper and inverter circuits. The IRFZ20PBF-BE3 body diode is rated for operation across the full -55 °C to +150 °C junction temperature range.
Is IRFZ20PBF-BE3 RoHS-compliant and halogen-free?
Yes, IRFZ20PBF-BE3 is both RoHS-compliant and halogen-free, as confirmed by Vishay's ordering information and material categorization documentation (www.vishay.com/doc?99912). The "-BE3" suffix explicitly denotes lead (Pb)-free and halogen-free construction. This compliance meets IPC-1752A material declaration requirements and supports environmentally regulated industrial and automotive end equipment. The IRFZ20PBF-BE3 conforms to JEDEC J-STD-020 moisture sensitivity level 1.
What is the gate threshold voltage range for IRFZ20PBF-BE3, and how does it affect drive requirements?
The IRFZ20PBF-BE3 has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at TJ = 25 °C, making it compatible with both 3.3 V and 5 V logic-level gate drivers. Full enhancement occurs at VGS = 10 V, where RDS(on) reaches its specified 0.10 Ω maximum. While the IRFZ20PBF-BE3 can turn on with lower gate voltages, robust switching requires ≥8 V to ensure low on-resistance and minimize conduction loss. The IRFZ20PBF-BE3 gate leakage remains ≤±500 nA across its ±20 V VGS rating.
Can IRFZ20PBF-BE3 be used in parallel configurations, and what design considerations apply?
Yes, the IRFZ20PBF-BE3 is designed for easy paralleling due to its positive temperature coefficient of RDS(on), which promotes natural current sharing across multiple devices. To ensure balanced operation, use matched gate resistors (≤25 Ω), symmetrical PCB layout with equal trace lengths, and shared heatsinking. The IRFZ20PBF-BE3's low Qgd/Qg ratio (3.0/17 nC) further enhances synchronization. Avoid mixing IRFZ20PBF-BE3 with other MOSFET families unless validated for matching thermal and electrical characteristics.
IRFZ20PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ20PBF-BE3 FAQ
1.How can I place an order for IRFZ20PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ20PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ20PBF-BE3 reliable?
The price and inventory of IRFZ20PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ20PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFZ20PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ20PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ20PBF-BE3?
IRFZ20PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ20PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ20PBF-BE3?
For technical support, including IRFZ20PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ20PBF-BE3 requirements.
6.How does Aetrix verify that IRFZ20PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFZ20PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ20PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFZ20PBF-BE3?
All IRFZ20PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ20PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ20PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFZ20PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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