Vishay Siliconix IRFZ34L

Overview

IRFZ34L from Vishay Siliconix is a 60 V, 30 A N-channel power MOSFET in low-profile through-hole I2PAK (TO-262) package, optimized for high-efficiency DC-DC converters and motor control switches. It delivers R_DS(on) = 0.050 Ω at V_GS = 10 V, supports 175 °C junction operation, and features fast switching with t_r = 100 ns and Q_g = 46 nC - enabling compact, thermally robust power stages in industrial power supplies.

For engineers reviewing the IRFZ34L datasheet, IRFZ34L pinout, IRFZ34L application, or IRFZ34L equivalent, key selection criteria include its 60 V V_DS, 30 A continuous drain rating at T_C = 25 °C, 1.7 °C/W junction-to-case thermal resistance, unclamped avalanche energy rating of 200 mJ, and compatibility with standard through-hole PCB assembly processes.

Technical Context

The IRFZ34L employs Vishay's third-generation silicon process to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V, confirming standard-level drive compatibility - not logic-level - and its body diode exhibits t_rr = 120–230 ns and Q_rr = 700–1400 μC under specified conditions.

This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its 88 W maximum power dissipation at T_C = 25 °C and R_thJC = 1.7 °C/W enable direct heatsink mounting without thermal interface material in moderate-power applications, and its dV/dt immunity of 4.5 V/ns supports reliable operation in noisy power converter environments.

Key Specifications

Pinout & Package

IRFZ34L uses the I2PAK (TO-262) low-profile through-hole package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44L and STP30NF20, the IRFZ34L uniquely balances 60 V rating, low-profile I2PAK form factor, and moderate gate charge - making it optimal for space-limited 48 V industrial power switches where thermal path efficiency and mechanical profile are prioritized over ultra-low R_DS(on) or extreme voltage headroom.

Availability

IRFZ34L is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED lighting systems requiring stable component supply and long-term manufacturability.

Supply support for IRFZ34L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness and reliability.

The IRFZ34L belongs to Vishay's legacy high-current power MOSFET family designed for industrial-grade switching applications demanding high avalanche energy, wide temperature operation, and proven through-hole mechanical robustness.

FAQ

What is the maximum continuous drain current for IRFZ34L at 100 °C case temperature?

The IRFZ34L supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the I2PAK package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify actual case temperature using R_thJC = 1.7 °C/W and measured power dissipation to ensure safe operation within this limit. The IRFZ34L remains fully functional across its full –55 to +175 °C junction range.

Does IRFZ34L have a built-in body diode, and what are its key parameters?

Yes, the IRFZ34L integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include forward voltage V_SD = 1.6 V at I_S = 30 A and T_J = 25 °C, reverse recovery time t_rr = 120–230 ns, and reverse recovery charge Q_rr = 700–1400 μC under specified test conditions. These values confirm suitability for freewheeling and synchronous rectification roles, though external Schottky diodes may be preferred for ultra-fast recovery requirements. The IRFZ34L body diode is rated for continuous 30 A and pulsed 120 A.

Is IRFZ34L RoHS-compliant, and what does the 'L' suffix indicate?

The IRFZ34L is offered in both leaded (Pb) and lead-free versions; the 'L' suffix denotes the low-profile through-hole I2PAK (TO-262) package variant - not RoHS status. RoHS compliance depends on the specific ordering code: IRFZ34LPbF contains lead, while SiHFZ34L-GE3 is lead-free and halogen-free. Always verify compliance using the full manufacturer part number and consult Vishay's official documentation (Doc. #90368) for material declarations. The IRFZ34L datasheet explicitly distinguishes between Pb-containing and Pb-free variants in its Ordering Information table.

What is the gate threshold voltage range for IRFZ34L, and how does it affect drive requirements?

The IRFZ34L has a gate threshold voltage V_GS(th) range of 2.0–4.0 V at I_D = 250 μA, confirming it is a standard-level MOSFET - not logic-level. Full enhancement requires V_GS ≥ 10 V to achieve R_DS(on) = 0.050 Ω. Driving below 8 V risks incomplete turn-on and excessive conduction loss. The IRFZ34L gate is rated for ±20 V maximum, allowing robust level-shifting in high-side configurations. Gate drive design must supply ≥46 nC total charge to achieve specified switching speeds.

Can IRFZ34L replace IRFZ34 in existing designs, and what are the mechanical differences?

Yes, the IRFZ34L is a direct mechanical and electrical replacement for the original IRFZ34 in through-hole applications, sharing identical I2PAK (TO-262) package dimensions, pinout, and electrical specifications. The 'L' suffix specifically identifies the low-profile variant - which matches the standard IRFZ34 outline per Vishay's package drawings (Doc. #91367). No PCB layout changes are needed. Thermal performance, R_DS(on), and switching characteristics are identical between IRFZ34 and IRFZ34L; both are manufactured using the same silicon process and qualification standards.