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Vishay Siliconix IRFZ34PBF-BE3
- Part No.:
- IRFZ34PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ34PBF-BE3.pdf
- Description:
- MOSFET N-CH 60V 30A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:849
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Product details
Overview
IRFZ34PBF-BE3 from Vishay Siliconix is a 60 V, 30 A N-channel power MOSFET in TO-220AB package, optimized for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 0.050 Ω RDS(on) at VGS = 10 V, 46 nC total gate charge, and supports 175 °C continuous operation with dynamic dV/dt rating up to 4.5 V/ns.
For engineers reviewing the IRFZ34PBF-BE3 datasheet, IRFZ34PBF-BE3 pinout, IRFZ34PBF-BE3 application, or IRFZ34PBF-BE3 equivalent, key selection criteria include its 88 W power dissipation at TC = 25 °C, unclamped avalanche energy rating of 200 mJ, and low 1.7 °C/W junction-to-case thermal resistance - critical for thermally constrained industrial power designs.
Technical Context
This third-generation planar vertical MOSFET uses ruggedized silicon design with integrated body diode exhibiting 120–230 ns reverse recovery time and 1.4 nC Qrr. Its gate threshold voltage (2.0–4.0 V) and low 11 nC Qgs enable simple drive with standard logic-level or 10 V gate drivers.
The device operates across -55 to +175 °C junction temperature range and features 0.59 W/°C linear derating above 25 °C case temperature. Its TO-220AB package provides 0.50 °C/W case-to-sink thermal resistance when mounted with grease on flat surface, supporting stable conduction in high-duty-cycle applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage before avalanche; defines use in ≤48 V bus systems with safety margin. |
| RDS(on) @ VGS = 10 V | 0.050 Ω - Enables <1.8 W conduction loss at 6 A DC load; critical for efficiency in 12–24 V power stages. |
| ID (continuous, TC = 25 °C) | 30 A - Sustained current capability with heatsinking; supports peak loads in motor H-bridge legs. |
| Qg | 46 nC - Determines gate driver current requirement (~1.15 A avg. for 200 ns turn-on); impacts switching loss trade-off. |
| EAS | 200 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive load turn-off transients. |
| TJ max | +175 °C - Enables reliable operation in sealed enclosures or high-ambient environments without derating. |
| dV/dt (peak diode recovery) | 4.5 V/ns - Confirmed immunity to parasitic turn-on during fast commutation; reduces need for snubbers. |
Pinout & Package
IRFZ34PBF-BE3 is housed in TO-220AB package with isolated tab (drain-connected), standard mounting hole, and 6–32/M3 screw compatibility. Thermal resistance from junction to case is 1.7 °C/W, and case-to-sink resistance is 0.50 °C/W with greased interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to metal tab; requires isolation washer if mounted to grounded heatsink. |
| Gate | Control terminal for channel conduction | High-impedance input; 2.0–4.0 V threshold enables TTL/CMOS-compatible drive with minimal gate current. |
| Source | Reference node for gate drive and current return | Common connection point for load return path and gate driver ground; internal source inductance is 7.5 nH. |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - Verified immunity to false triggering during fast voltage transients in inductive switching. |
| Fast switching performance | 13 ns turn-on delay + 100 ns rise time - Enables >100 kHz PWM operation with low overlap loss. |
| Low gate charge | 46 nC total with 11 nC Qgs - Reduces gate driver power demand and simplifies discrete or IC-based drive design. |
| Ruggedized construction | 200 mJ unclamped avalanche energy - Supports reliable operation without external clamping in flyback or motor freewheeling. |
| Easy paralleling capability | Positive RDS(on) temperature coefficient - Ensures current sharing stability across multiple devices in parallel arrays. |
Applications
| DC-DC Converters | Motor Drive Half-Bridge |
|---|---|
Use Scenario: Step-down (buck) converter in industrial PLC power modules delivering 12 V/10 A from 48 V input. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz with 30% duty cycle. Use Value: 0.050 Ω RDS(on) limits conduction loss to 0.5 W at full load, while 46 nC Qg enables efficient gate driving with UCC27531. |
Use Scenario: Low-side switch in brushed DC motor H-bridge controlling 24 V, 8 A fan assembly in HVAC control unit. IC Role / Device Role / Timing Role: PWM-controlled power stage switch with 10 kHz switching and 0–100% duty cycle range. Use Value: 175 °C max junction temperature and 30 A continuous rating ensure reliability under stall-current conditions (up to 80 A peak). |
| Uninterruptible Power Supplies | LED Constant-Current Drivers |
Use Scenario: Battery backup in-line inverter stage converting 24 V DC to 120 V AC via full-bridge topology. IC Role / Device Role / Timing Role: Low-side switch in push-pull configuration handling 15 A RMS output current. Use Value: 200 mJ EAS withstands transformer leakage inductance energy during dead-time transitions without failure. |
Use Scenario: Dimmable constant-current LED driver for architectural lighting, delivering 350 mA to 12 V string. IC Role / Device Role / Timing Role: Linear or PWM-adjustable current sink switch in buck-derived topology. Use Value: Low 2.0–4.0 V VGS(th) allows direct microcontroller GPIO drive; 7.5 nH LS minimizes current sensing noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.018 Ω, Qg = 95 nC, TO-220FP package (insulated tab) | Higher current rating but larger gate charge; requires stronger gate driver and tighter thermal management. | Preferred where higher continuous current (>40 A) is needed and gate drive capability supports 95 nC. |
| IRFZ44NPBF | 55 V, 49 A, RDS(on) = 0.028 Ω, Qg = 71 nC, same TO-220AB package | Lower VDS rating limits use to ≤40 V systems; lower RDS(on) improves conduction loss but increases dV/dt sensitivity. | Best suited for cost-sensitive 12–24 V applications where 55 V rating suffices and lower on-resistance justifies higher Qg. |
Compared with STP60NF06 and IRFZ44NPBF, the IRFZ34PBF-BE3 offers optimal balance of 60 V rating, moderate gate charge, and proven ruggedness for mid-power industrial switching - making it preferred where avalanche robustness and thermal margin outweigh raw current density.
Availability
IRFZ34PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and LED constant-current drivers requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFZ34PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, thermal performance, and industrial reliability.
The IRFZ34PBF-BE3 belongs to Vishay's third-generation power MOSFET family, engineered for commercial-industrial power conversion where dynamic stress immunity, ease of paralleling, and 175 °C operation are essential.
FAQ
What is the maximum continuous drain current for IRFZ34PBF-BE3 at 100 °C case temperature?
The IRFZ34PBF-BE3 supports 21 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects the device's 0.59 W/°C linear thermal coefficient and ensures safe operation within its 175 °C maximum junction temperature limit. Designers must verify heatsink performance to maintain TC ≤ 100 °C under full-load conditions. The IRFZ34PBF-BE3 datasheet specifies this value explicitly in the Absolute Maximum Ratings section.
Does IRFZ34PBF-BE3 have a RoHS-compliant and halogen-free construction?
Yes, IRFZ34PBF-BE3 is both lead (Pb)-free and halogen-free, as indicated by the "-BE3" suffix in its ordering code. Vishay confirms this compliance per their material categorization standard (document 99912). The device meets JEDEC JS709B and IEC 61249-2-21 requirements. IRFZ34PBF-BE3 is distinct from the Pb-free-only IRFZ34PbF variant, which lacks halogen-free certification.
What is the typical body diode reverse recovery time (trr) of IRFZ34PBF-BE3?
The IRFZ34PBF-BE3 exhibits a typical body diode reverse recovery time of 120 ns and a maximum of 230 ns at TJ = 25 °C, IF = 30 A, and dI/dt = 100 A/μs. This parameter is critical for synchronous rectification and freewheeling applications. The IRFZ34PBF-BE3 datasheet lists trr in the Drain-Source Body Diode Characteristics table, confirming its suitability for medium-frequency switching where diode recovery losses must be minimized.
Can IRFZ34PBF-BE3 be used in avalanche mode, and what is its rated energy?
Yes, IRFZ34PBF-BE3 is rated for single-pulse unclamped inductive switching with 200 mJ avalanche energy (EAS) at TC = 25 °C. This is validated per test condition b in the Absolute Maximum Ratings table (VDD = 25 V, L = 259 μH, Rg = 25 Ω, IAS = 30 A). The IRFZ34PBF-BE3 is not rated for repetitive avalanche; designers must ensure transient energy remains within this single-pulse limit.
What is the gate-source leakage current specification for IRFZ34PBF-BE3?
The IRFZ34PBF-BE3 specifies gate-source leakage current (IGSS) as ±100 nA maximum at VGS = ±20 V and TJ = 25 °C. This low leakage supports stable gate biasing in high-impedance drive circuits and ensures minimal standby power loss. The value is confirmed in the Static section of the Specifications table. IRFZ34PBF-BE3 maintains this performance across its full operating temperature range.
IRFZ34PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ34PBF-BE3 FAQ
1.How can I place an order for IRFZ34PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ34PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ34PBF-BE3 reliable?
The price and inventory of IRFZ34PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFZ34PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ34PBF-BE3?
IRFZ34PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ34PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ34PBF-BE3?
For technical support, including IRFZ34PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34PBF-BE3 requirements.
6.How does Aetrix verify that IRFZ34PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFZ34PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFZ34PBF-BE3?
All IRFZ34PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ34PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFZ34PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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