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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ34STRLPBF

Name: IRFZ34STRLPBF
Brand: Vishay Siliconix
SKU: IRFZ34STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ34STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ34STRLPBF.pdf

Description:: MOSFET N-CH 60V 30A D2PAK

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Product details

Overview

IRFZ34STRLPBF from Vishay Siliconix is a 60 V, 30 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 0.050 Ω R_DS(on) at V_GS = 10 V, supports 175 °C operation, and features fast switching with 13 ns turn-on delay and 52 ns fall time.

For engineers reviewing the IRFZ34STRLPBF datasheet, IRFZ34STRLPBF pinout, IRFZ34STRLPBF application, or IRFZ34STRLPBF equivalent, key selection criteria include its 88 W power dissipation at T_C = 25 °C, 46 nC total gate charge, 200 mJ single-pulse avalanche energy rating, and RoHS-compliant lead-free/halogen-free construction.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family, using advanced silicon processing to minimize on-resistance per die area while maintaining ruggedness. Its D2PAK package enables low thermal resistance (R_thJC = 1.7 °C/W) and high power handling up to 2 W in surface-mount configurations.

The IRFZ34STRLPBF integrates a fast-recovery body diode (t_rr = 120–230 ns, Q_rr = 700–1400 µC) and exhibits stable gate threshold voltage (V_GS(th) = 2.0–4.0 V) across temperature, supporting reliable gate drive design with standard 10 V logic-level signals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems and unregulated input stages.
R_DS(on) @ V_GS = 10 V	0.050 Ω - Low conduction loss enabling <1.8 W I²R loss at 6 A continuous current.
I_D (continuous, T_C = 25 °C)	30 A - High current capability supported by D2PAK thermal performance and copper tab mounting.
Q_g	46 nC - Gate drive energy requirement determines minimum driver strength and switching loss trade-off.
E_AS	200 mJ - Avalanche-rated for robustness in inductive switching, e.g., relay driving or flyback snubbing.
t_r/t_f	100 ns / 52 ns - Fast edge rates reduce transition losses in PWM applications above 100 kHz.
T_J max	175 °C - Extended junction temperature rating allows operation in sealed enclosures or high ambient environments.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) compatible with industry-standard PCB footprints per AN826 recommended pads.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level signal; requires ≤46 nC charge for full enhancement; sensitive to ESD (±20 V max).
D (Drain)	High-side power output	Connected to load or supply rail; electrically and thermally tied to large copper pour via exposed tab.
S (Source)	Reference/return path	Common node for gate drive return and current sensing; ties to ground or low-side switch source.

Key Features

Feature	Design Value
Advanced process technology	Enables 0.050 Ω R_DS(on) in D2PAK, reducing conduction loss vs. prior generations without increasing die size.
175 °C operating temperature	Supports sustained operation in automotive under-hood or industrial motor control environments without derating.
Fast switching (t_d(on) = 13 ns)	Minimizes overlap loss in synchronous rectification and high-frequency SMPS designs up to 500 kHz.
Robust body diode (Q_rr = 700–1400 µC)	Reduces voltage spikes and EMI during freewheeling in half-bridge and H-bridge topologies.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile for lead-free assembly.

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver
Use Scenario: High-efficiency 48 V input buck converter delivering 12 V/15 A to telecom equipment. IC Role / Device Role / Timing Role: Main high-side switching element controlled by PWM controller; handles 30 A peak currents during transient loads. Use Value: 0.050 Ω R_DS(on) limits conduction loss to <2.3 W at full load, improving thermal margin over alternatives with >0.07 Ω.	Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuator with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in H-bridge; conducts reverse current during active freewheeling phase. Use Value: Body diode t_rr ≤ 230 ns and Q_rr ≤ 1400 µC suppress voltage overshoot during commutation, eliminating need for external Schottky clamp.
Uninterruptible Power Supply (UPS) Inverter	Industrial Solenoid Driver
Use Scenario: 60 V battery-backed UPS inverter stage converting DC to 230 VAC via full-bridge topology. IC Role / Device Role / Timing Role: One quadrant switch in full-bridge; subjected to repetitive unclamped inductive switching stress. Use Value: 200 mJ E_AS rating ensures reliable operation during short-circuit events without avalanche failure.	Use Scenario: 48 V solenoid actuation in factory automation valve control with 100 ms pulse duration. IC Role / Device Role / Timing Role: High-current switch turning solenoid on/off; must survive repeated inductive kickback. Use Value: 120 A pulsed drain current (I_DM) and 175 °C T_J allow safe 50 A peak pulses without thermal shutdown in cyclic duty.

DC-DC Converter Primary Switch

Brushed DC Motor Driver

Use Scenario: High-efficiency 48 V input buck converter delivering 12 V/15 A to telecom equipment.

IC Role / Device Role / Timing Role: Main high-side switching element controlled by PWM controller; handles 30 A peak currents during transient loads.

Use Value: 0.050 Ω R_DS(on) limits conduction loss to <2.3 W at full load, improving thermal margin over alternatives with >0.07 Ω.

Use Scenario: Bidirectional 24 V brushed motor control in automated gate actuator with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge; conducts reverse current during active freewheeling phase.

Use Value: Body diode t_rr ≤ 230 ns and Q_rr ≤ 1400 µC suppress voltage overshoot during commutation, eliminating need for external Schottky clamp.

Uninterruptible Power Supply (UPS) Inverter

Industrial Solenoid Driver

Use Scenario: 60 V battery-backed UPS inverter stage converting DC to 230 VAC via full-bridge topology.

IC Role / Device Role / Timing Role: One quadrant switch in full-bridge; subjected to repetitive unclamped inductive switching stress.

Use Value: 200 mJ E_AS rating ensures reliable operation during short-circuit events without avalanche failure.

Use Scenario: 48 V solenoid actuation in factory automation valve control with 100 ms pulse duration.

IC Role / Device Role / Timing Role: High-current switch turning solenoid on/off; must survive repeated inductive kickback.

Use Value: 120 A pulsed drain current (I_DM) and 175 °C T_J allow safe 50 A peak pulses without thermal shutdown in cyclic duty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 0.028 Ω @ 10 V (lower), but Q_g = 71 nC (higher); same D2PAK package.	Better conduction loss at high current, but higher gate drive demand increases switching loss above 100 kHz.	Prefer IRFZ44NPBF only when conduction loss dominates and gate driver can supply >70 nC.
STP60NF06	R_DS(on) = 0.014 Ω @ 10 V; TO-220 package (not surface-mount); higher I_D = 60 A.	Requires through-hole assembly and larger heatsink; unsuitable for space-constrained SMT designs.	Select STP60NF06 only if board layout permits TO-220 and thermal management supports higher power density.

Compared with IRFZ44NPBF and STP60NF06, the IRFZ34STRLPBF offers balanced trade-offs: moderate R_DS(on), manageable Q_g, and D2PAK compatibility-making it optimal for cost-sensitive, medium-power SMT applications where thermal and layout constraints preclude lower-R_DS(on) alternatives.

Availability

IRFZ34STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, uninterruptible power supplies, and industrial solenoid controls requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ34STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability and high-performance analog components.

The IRFZ34STRLPBF belongs to Vishay's third-generation power MOSFET product line, engineered for high-current, high-efficiency switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current for IRFZ34STRLPBF at 100 °C case temperature?

The IRFZ34STRLPBF supports 21 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be verified against actual PCB copper area and airflow in the target application. The IRFZ34STRLPBF maintains stable R_DS(on) up to 175 °C junction temperature, enabling operation in thermally constrained environments.

Does IRFZ34STRLPBF require a gate resistor, and what value is recommended?

Yes, IRFZ34STRLPBF requires an external gate resistor to control dV/dt and prevent oscillation. A 12 Ω resistor is used in the datasheet's switching time test circuit (Fig. 10), yielding t_d(on) = 13 ns and t_f = 52 ns. For lower EMI, increase to 25 Ω; for faster switching in low-inductance layouts, reduce to 5–10 Ω-but verify stability with oscilloscope measurement of V_GS ringing. The IRFZ34STRLPBF gate capacitance (C_iss = 1200 pF) makes it sensitive to layout parasitics.

Can IRFZ34STRLPBF be used in avalanche mode, and what is its rated energy?

Yes, IRFZ34STRLPBF is rated for single-pulse avalanche with E_AS = 200 mJ under defined test conditions (V_DD = 25 V, I_AS = 30 A). This capability allows safe operation during inductive turn-off transients in relay drivers or flyback converters without external clamping. Repeated avalanche is not guaranteed; the IRFZ34STRLPBF should be operated within SOA limits shown in Fig. 8 for long-term reliability.

What is the thermal resistance from junction to case (R_thJC) for IRFZ34STRLPBF?

The IRFZ34STRLPBF has a maximum junction-to-case thermal resistance (R_thJC) of 1.7 °C/W, measured from die to the D2PAK drain tab. This value assumes proper soldering to a large copper area per AN826 pad recommendations. Effective thermal performance depends on PCB copper thickness, thermal vias, and heatsink interface; the IRFZ34STRLPBF's low R_thJC enables 88 W power dissipation at T_C = 25 °C.

Is IRFZ34STRLPBF pin-compatible with IRFZ44NPBF?

Yes, IRFZ34STRLPBF and IRFZ44NPBF share identical D2PAK (TO-263) package dimensions, pinout (G-D-S), and mechanical footprint per JEDEC outline. Both devices mount to the same PCB land pattern and use identical thermal pad layout. However, the IRFZ34STRLPBF has higher R_DS(on) (0.050 Ω vs. 0.028 Ω) and lower Q_g (46 nC vs. 71 nC), so gate drive and thermal design must be re-evaluated when substituting.

IRFZ34STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFZ34STRLPBF FAQ

1.How can I place an order for IRFZ34STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ34STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ34STRLPBF reliable?

The price and inventory of IRFZ34STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ34STRLPBF is usually 5 days.

3.What payment methods are accepted for IRFZ34STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ34STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ34STRLPBF?

IRFZ34STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ34STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ34STRLPBF?

For technical support, including IRFZ34STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ34STRLPBF requirements.

6.How does Aetrix verify that IRFZ34STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ34STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ34STRLPBF meets industry standards.

7.What is the process for return or replacement of IRFZ34STRLPBF?

All IRFZ34STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ34STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ34STRLPBF part is unused and in its original packaging.

Return procedure for IRFZ34STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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