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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ44L

Name: IRFZ44L
Brand: Vishay Siliconix
SKU: IRFZ44L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ44L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFZ44L.pdf

Description:: MOSFET N-CH 60V 50A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ44L from Vishay Siliconix is a 60 V, 50 A N-channel enhancement-mode power MOSFET in low-profile through-hole I2PAK (TO-262) package, featuring 0.028 Ω R_DS(on) at V_GS = 10 V, 67 nC total gate charge, and 175 °C maximum junction temperature - designed for high-efficiency DC-DC converters, motor drives, and power switching applications requiring robust pulsed current handling up to 200 A.

For engineers reviewing the IRFZ44L datasheet, IRFZ44L pinout, IRFZ44L application, or IRFZ44L equivalent, this device delivers verified thermal performance (R_thJC = 1.0 °C/W), fast switching (t_r = 110 ns, t_f = 92 ns), and integrated body diode recovery characteristics (t_rr = 120–180 ns) critical for synchronous rectification and inductive load control.

Technical Context

The IRFZ44L employs Vishay's third-generation silicon process to achieve ultra-low on-resistance per die area while maintaining rugged avalanche capability (E_AS = 100 mJ) and high dV/dt immunity (4.5 V/ns). Its gate threshold voltage (2.0–4.0 V) supports standard 10 V logic-level drive without requiring level-shifting circuitry.

Thermally optimized for PCB-mounted operation, the I2PAK package enables 150 W maximum power dissipation at T_C = 25 °C with 1.0 °C/W junction-to-case resistance, and its internal source inductance (7.5 nH) minimizes switching-induced voltage spikes during high di/dt transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage compatible with 48 V bus systems and automotive 36 V transients
R_DS(on) @ V_GS = 10 V	0.028 Ω - Enables <1.5 W conduction loss at 31 A continuous drain current, reducing heatsink requirements
Q_g	67 nC - Gate drive energy demand informs selection of gate driver ICs capable of ≥2 A peak output
I_D (T_C = 100 °C)	36 A - Continuous safe operating current under elevated ambient conditions typical in enclosed power supplies
E_AS	100 mJ - Unclamped inductive switching energy rating supports reliable operation in relay/snubberless solenoid drivers
t_r/t_f	110 ns / 92 ns - Fast edge rates reduce switching losses in PWM frequencies up to 100 kHz
T_J(max)	175 °C - Extended temperature range allows operation in high-ambient industrial environments without derating

Pinout & Package

IRFZ44L uses the I2PAK (TO-262) low-profile through-hole package: 3-pin, single-ended leadframe with isolated tab (drain-connected), 14.1 mm height, 10.7 mm width, and 4.8 mm depth. Mounting requires 3.56–3.71 mm lead length (L2) and 1.65 mm max standoff (L1).

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal; 18 nC gate-source charge defines Miller plateau duration during turn-on
D (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground
S (Source)	Power return/reference node	Serves as local ground reference for gate drive; 7.5 nH internal inductance impacts diode reverse recovery behavior

Key Features

Feature	Design Value
Low-profile through-hole mounting	I2PAK (TO-262) package enables vertical PCB layout in space-constrained power modules without surface-mount reflow constraints
175 °C rated junction temperature	Supports sustained operation in sealed enclosures or high-ambient industrial settings without forced air cooling
Fast body diode recovery	t_rr = 120–180 ns and Q_rr = 530–800 nC enable efficient freewheeling in half-bridge motor drives with minimal cross-conduction risk
Rugged unclamped avalanche capability	E_AS = 100 mJ allows safe energy absorption during inductive turn-off events without external snubbers
High pulsed current rating	I_DM = 200 A supports short-duration surge loads such as motor startup or capacitor charging

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Driver
Use Scenario: High-current buck converter in telecom power shelf delivering 12 V/30 A from 48 V input. IC Role / Device Role / Timing Role: Main switching transistor operating at 100 kHz PWM with synchronous rectification. Use Value: 0.028 Ω R_DS(on) reduces conduction loss to <2.6 W at full load, enabling natural convection cooling.	Use Scenario: H-bridge driver for 24 V, 25 A brushed motor in automated gate actuator. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and braking via PWM duty cycle. Use Value: 200 A pulsed current rating handles locked-rotor surges; 175 °C T_J(max) prevents thermal shutdown during intermittent stall conditions.
Inductive Load Snubberless Driver	UPS Inverter Output Stage
Use Scenario: Solenoid valve controller in HVAC system with 400 ms on-time and 500 ms off-time cycles. IC Role / Device Role / Timing Role: Single-ended switch managing inductive energy release via body diode freewheeling. Use Value: Verified 100 mJ avalanche energy rating eliminates need for external clamping diodes or RC snubbers.	Use Scenario: 600 VA online UPS using full-bridge inverter to generate 230 VAC from 48 VDC battery bank. IC Role / Device Role / Timing Role: High-side and low-side switch in each leg, driven by isolated gate drivers. Use Value: 4.5 V/ns dV/dt immunity prevents false triggering during rapid bus voltage transitions in transformer-coupled output stage.

DC-DC Converter Primary Switch

Brushed DC Motor Driver

Use Scenario: High-current buck converter in telecom power shelf delivering 12 V/30 A from 48 V input.

IC Role / Device Role / Timing Role: Main switching transistor operating at 100 kHz PWM with synchronous rectification.

Use Value: 0.028 Ω R_DS(on) reduces conduction loss to <2.6 W at full load, enabling natural convection cooling.

Use Scenario: H-bridge driver for 24 V, 25 A brushed motor in automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and braking via PWM duty cycle.

Use Value: 200 A pulsed current rating handles locked-rotor surges; 175 °C T_J(max) prevents thermal shutdown during intermittent stall conditions.

Inductive Load Snubberless Driver

UPS Inverter Output Stage

Use Scenario: Solenoid valve controller in HVAC system with 400 ms on-time and 500 ms off-time cycles.

IC Role / Device Role / Timing Role: Single-ended switch managing inductive energy release via body diode freewheeling.

Use Value: Verified 100 mJ avalanche energy rating eliminates need for external clamping diodes or RC snubbers.

Use Scenario: 600 VA online UPS using full-bridge inverter to generate 230 VAC from 48 VDC battery bank.

IC Role / Device Role / Timing Role: High-side and low-side switch in each leg, driven by isolated gate drivers.

Use Value: 4.5 V/ns dV/dt immunity prevents false triggering during rapid bus voltage transitions in transformer-coupled output stage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 0.018 Ω @ 10 V, but rated only to 60 V and 55 A; TO-220 package (higher R_thJA)	Better conduction efficiency but lower thermal margin in compact layouts due to TO-220's 62 °C/W R_thJA	Prefer when board space allows larger heatsink and lowest possible I²R loss dominates design priority
IRFZ44N	Identical electrical specs and pinout, but packaged in standard TO-220 (not low-profile); same 60 V/50 A/0.028 Ω rating	Requires taller vertical clearance; unsuitable for ultra-low-height enclosures where IRFZ44L's I2PAK saves >5 mm height	Select IRFZ44N only if existing TO-220 footprint is fixed and height constraint does not apply

Compared with STP55NF06L and IRFZ44N, the IRFZ44L uniquely combines TO-220-equivalent performance with I2PAK's low-profile mechanical form factor and superior junction-to-case thermal path (1.0 °C/W vs. ~2.5 °C/W for TO-220), making it optimal for thermally dense, height-limited power stages.

Availability

IRFZ44L is available at Aetrix Electronics and suitable for DC-DC converters, motor controllers, and uninterruptible power supplies requiring stable component supply with long-term industrial lifecycle support.

Supply support for IRFZ44L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFZ44L belongs to Vishay's legacy silicon power MOSFET product line engineered for cost-sensitive, high-current switching applications where ruggedness, thermal stability, and proven field reliability are essential.

FAQ

What is the maximum continuous drain current for IRFZ44L at 100 °C case temperature?

The IRFZ44L supports 36 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value is derived from thermal limits and ensures safe operation without exceeding 175 °C maximum junction temperature under steady-state conduction. Designers must verify heatsink interface resistance and ambient airflow to maintain T_C ≤ 100 °C when operating near this limit. The IRFZ44L's 1.0 °C/W R_thJC enables predictable thermal modeling in custom thermal solutions.

Does IRFZ44L have a built-in body diode, and what are its key recovery parameters?

Yes, the IRFZ44L integrates a monolithic body diode with specified reverse recovery time (t_rr) of 120–180 ns and reverse recovery charge (Q_rr) of 530–800 nC at T_J = 25 °C, I_F = 51 A, and dI/dt = 100 A/μs. These values are measured under standardized test conditions and directly impact switching losses in freewheeling paths. The IRFZ44L's body diode performance is validated for use in non-synchronous rectifier topologies where controlled recovery reduces voltage overshoot during commutation.

Can IRFZ44L be driven directly by a 5 V microcontroller GPIO pin?

No - the IRFZ44L has a gate threshold voltage (V_GS(th)) range of 2.0–4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve its rated 0.028 Ω R_DS(on). Driving with only 5 V results in significantly higher on-resistance (>0.1 Ω), excessive conduction loss, and potential thermal runaway. A dedicated gate driver (e.g., TC4420 or MIC4422) supplying 10–15 V with ≥2 A peak current is required for reliable IRFZ44L operation. The IRFZ44L datasheet explicitly specifies test conditions at V_GS = 10 V.

What is the avalanche energy rating of IRFZ44L, and how is it tested?

The IRFZ44L is rated for 100 mJ single-pulse avalanche energy (E_AS), tested per JEDEC standard JESD24-11 using unclamped inductive switching (UIS) with V_DD = 25 V, L = 44 μH, R_g = 25 Ω, and I_AS = 51 A. This rating confirms the device can safely absorb inductive energy during overcurrent or short-circuit events without failure. The IRFZ44L's E_AS is not repetitive; designers must ensure fault durations remain within single-pulse limits defined in Figure 12c of the Vishay datasheet S21-0932-Rev. D.

Is IRFZ44L RoHS-compliant, and what packaging options are available?

The IRFZ44L is offered in both lead (Pb)-free and lead-containing versions: IRFZ44LPbF (lead-based terminations) and SIHFZ44L-GE3 (lead-free and halogen-free). Both comply with Vishay's material categorization per document 99912, and the "GE3" suffix denotes RoHS-compliant packaging. The IRFZ44L's I2PAK (TO-262) package uses matte tin plating on leads and meets JEDEC moisture sensitivity level (MSL) 1 requirements. No special handling or baking is needed prior to through-hole assembly.

IRFZ44L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3

IRFZ44L FAQ

1.How can I place an order for IRFZ44L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44L reliable?

The price and inventory of IRFZ44L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44L is usually 5 days.

3.What payment methods are accepted for IRFZ44L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44L?

IRFZ44L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44L?

For technical support, including IRFZ44L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44L requirements.

6.How does Aetrix verify that IRFZ44L is sourced from the original manufacturer or authorized distributors?

All IRFZ44L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44L meets industry standards.

7.What is the process for return or replacement of IRFZ44L?

All IRFZ44L units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44L part is unused and in its original packaging.

Return procedure for IRFZ44L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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