Vishay Siliconix IRFZ44PBF-BE3
- Part No.:
- IRFZ44PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRFZ44PBF-BE3.pdf
- Description:
- MOSFET N-CH 60V 50A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:680
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Product details
Overview
IRFZ44PBF-BE3 from Vishay Siliconix is a 60 V, 50 A N-channel enhancement-mode power MOSFET in TO-220AB package, featuring 0.028 Ω RDS(on) at VGS = 10 V, 67 nC total gate charge, and 175 °C maximum junction temperature. It delivers fast switching, rugged avalanche capability (100 mJ), and ease of paralleling for DC-DC converters, motor drives, and power supplies.
For engineers reviewing the IRFZ44PBF-BE3 datasheet, IRFZ44PBF-BE3 pinout, IRFZ44PBF-BE3 application, or IRFZ44PBF-BE3 equivalent, key selection criteria include its 60 V VDS, low conduction loss at high current, unclamped inductive switching robustness, and Pb-free/halogen-free compliance per Vishay S21-1045-Rev. C.
Technical Context
This third-generation power MOSFET uses planar V-groove technology to achieve low on-resistance while maintaining high dV/dt immunity (4.5 V/ns) and reliable body diode recovery (trr = 120–180 ns). Its gate threshold voltage (2.0–4.0 V) and simple drive requirements support direct microcontroller interfacing without level-shifting.
The device integrates a monolithic body diode with 2.5 V forward drop at 51 A and supports repetitive avalanche operation up to 100 mJ. Thermal design is enabled by low RthJC (1.0 °C/W) and compatibility with standard TO-220 heatsinking practices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V bus systems with margin |
| RDS(on) @ VGS = 10 V | 0.028 Ω - Enables ≤1.5 W conduction loss at 7.5 A RMS in continuous operation |
| ID (continuous, TC = 25 °C) | 50 A - Supports high-current switching in industrial power stages |
| Qg (max) | 67 nC - Determines gate driver current requirement (~1.3 A peak for 52 ns turn-on) |
| EAS | 100 mJ - Specifies single-pulse unclamped inductive energy handling capability |
| TJ max | +175 °C - Allows operation in sealed enclosures or high-ambient environments |
| dV/dt rating | 4.5 V/ns - Ensures noise immunity during fast switching in noisy power circuits |
Pinout & Package
IRFZ44PBF-BE3 is housed in a TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. The package features 3 leads: Gate (G), Drain (D), and Source (S), with drain electrically connected to the metal tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives 10 V logic-level signal to fully enhance channel; threshold 2.0–4.0 V enables TTL/CMOS drive |
| D | Drain (high-side switch node) | Connected to metal tab; requires insulating washer when mounted to grounded heatsink |
| S | Source (return path) | Common reference for gate drive and load current return; forms Kelvin source for accurate sensing |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic dV/dt rating | 4.5 V/ns - Prevents false turn-on during high-speed switching transients |
| Fast switching | td(on) = 14 ns, tr = 110 ns - Reduces switching losses in 20–100 kHz SMPS designs |
| Body diode recovery | trr = 120–180 ns, Qrr = 0.53–0.80 nC - Limits reverse recovery loss in synchronous rectification |
| Paralleling capability | Positive RDS(on) temperature coefficient - Enables current sharing across multiple devices without external ballasting |
| RoHS & halogen-free | IRFZ44PBF-BE3 designation confirms Pb-free and halogen-free construction per JEDEC J-STD-609 |
Applications
| DC-DC Buck Converter | Brushed DC Motor Drive |
|---|---|
Use Scenario: 48 V input, 12 V/20 A output step-down converter in telecom power shelf. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 50–100 kHz PWM frequency. Use Value: Low RDS(on) minimizes conduction loss; fast turn-off (tf = 92 ns) reduces shoot-through risk during dead-time control. | Use Scenario: H-bridge driver for 24 V, 15 A brushed motor in automated gate actuator. IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and braking via PWM duty cycle. Use Value: 175 °C rating ensures reliability under stall conditions; avalanche energy rating protects against inductive kickback during abrupt stop. |
| AC-DC PFC Front-End | Industrial Lighting Ballast |
Use Scenario: Boost-type active PFC stage in 300 W LED driver with universal AC input. IC Role / Device Role / Timing Role: Main switching transistor in critical conduction mode (CRM) boost converter. Use Value: Low gate charge (67 nC) reduces driver power consumption; body diode Qrr enables zero-current switching transitions. | Use Scenario: High-frequency electronic ballast for 40 W fluorescent lamp with dimming control. IC Role / Device Role / Timing Role: Resonant half-bridge switch operating above 25 kHz to eliminate audible noise. Use Value: 4.5 V/ns dV/dt immunity prevents spurious turn-on from resonant voltage spikes; TO-220AB package allows direct heatsink mounting in compact enclosure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.018 Ω, Qg = 85 nC, TO-220FP package (full-pack) | Higher current rating but larger gate charge; requires stronger gate driver | Prefer when lower conduction loss dominates over switching loss; verify PCB pad layout for TO-220FP footprint |
| IXTP50N06T | 60 V, 50 A, RDS(on) = 0.022 Ω, Qg = 52 nC, TO-220AB package | Lower gate charge and slightly better RDS(on); same package and pinout | Preferred for higher-frequency operation (>150 kHz); no PCB change required if replacing IRFZ44PBF-BE3 |
Compared with STP60NF06 and IXTP50N06T, IRFZ44PBF-BE3 offers balanced conduction-switching trade-off at 50–100 kHz, proven avalanche ruggedness, and industry-standard TO-220AB mechanical fit-making it optimal for cost-sensitive industrial power stages where reliability under transient stress is critical.
Availability
IRFZ44PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial lighting ballasts requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFZ44PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRFZ44PBF-BE3 belongs to Vishay's legacy silicon power MOSFET product line, engineered for high-current, medium-voltage switching in industrial, automotive, and consumer power systems where cost-performance balance and field-proven robustness are essential.
FAQ
What is the maximum continuous drain current for IRFZ44PBF-BE3 at 100 °C case temperature?
The IRFZ44PBF-BE3 supports 36 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be validated against actual board-level thermal resistance and ambient conditions. Designers should use RthJC = 1.0 °C/W and RthCS = 0.50 °C/W to model junction temperature rise in their specific heatsink configuration. The IRFZ44PBF-BE3 datasheet (S21-1045-Rev. C) provides derating curves in Figure 9.
Does IRFZ44PBF-BE3 have avalanche capability, and how is it rated?
Yes, the IRFZ44PBF-BE3 is rated for repetitive and single-pulse avalanche operation. Its single-pulse avalanche energy EAS is 100 mJ under defined test conditions (VDD = 25 V, IAS = 51 A, TJ starting at 25 °C). This rating enables safe operation during inductive load switching transients without external snubbers. The IRFZ44PBF-BE3 datasheet specifies that avalanche capability is limited by junction temperature and pulse width, with guidance provided in Figure 12c.
Is IRFZ44PBF-BE3 pin-compatible with older IRFZ44 variants like IRFZ44NPbF?
Yes, IRFZ44PBF-BE3 is mechanically and electrically pin-compatible with IRFZ44NPbF and IRFZ44PbF, sharing identical TO-220AB package dimensions, pinout (G-D-S), and terminal assignments. The "-BE3" suffix denotes lead-free and halogen-free construction per JEDEC J-STD-609, with no electrical or thermal performance deviation from prior versions. The IRFZ44PBF-BE3 maintains full backward compatibility in existing PCB layouts and thermal designs.
What is the body diode forward voltage of IRFZ44PBF-BE3, and how does it affect synchronous rectification?
The IRFZ44PBF-BE3 body diode exhibits VSD = 2.5 V at IS = 51 A and TJ = 25 °C. In synchronous rectification, this relatively high forward drop increases conduction loss compared to external Schottky diodes, making it best suited for low-duty-cycle or low-current freewheeling paths. Its reverse recovery charge Qrr (0.53–0.80 nC) and time trr (120–180 ns) must be accounted for in gate timing to avoid cross-conduction. The IRFZ44PBF-BE3 datasheet characterizes these parameters in Section "Drain-Source Body Diode Characteristics".
Can IRFZ44PBF-BE3 be driven directly by a 3.3 V microcontroller GPIO?
No, IRFZ44PBF-BE3 is not a logic-level MOSFET and cannot be fully enhanced by 3.3 V alone. Its gate threshold voltage VGS(th) ranges from 2.0 V to 4.0 V, and RDS(on) is only guaranteed at VGS = 10 V. At 3.3 V, the device operates in weak inversion with high RDS(on) (>0.5 Ω), causing excessive heating. A gate driver or level shifter is required to deliver ≥10 V to the IRFZ44PBF-BE3 gate for efficient switching. This limitation is explicitly noted in the "Static" section of the IRFZ44PBF-BE3 specifications table.
IRFZ44PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRFZ44PBF-BE3 FAQ
1.How can I place an order for IRFZ44PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44PBF-BE3 reliable?
The price and inventory of IRFZ44PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRFZ44PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44PBF-BE3?
IRFZ44PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44PBF-BE3?
For technical support, including IRFZ44PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44PBF-BE3 requirements.
6.How does Aetrix verify that IRFZ44PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRFZ44PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRFZ44PBF-BE3?
All IRFZ44PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44PBF-BE3 part is unused and in its original packaging.
Return procedure for IRFZ44PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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