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Vishay Siliconix IRFZ44RPBF-BE3

Part No.:
IRFZ44RPBF-BE3
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRFZ44RPBF-BE3.pdf
Description:
MOSFET N-CH 60V 50A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:254

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Product details

Overview

IRFZ44RPBF-BE3 from Vishay Siliconix is a 60 V, 50 A N-channel power MOSFET in TO-220AB package, featuring 0.028 Ω RDS(on) at VGS = 10 V, 67 nC total gate charge, and 175 °C maximum junction temperature. It serves as a high-current switching element in DC-DC converters, motor drives, and linear/audio amplifier output stages.

For engineers reviewing the IRFZ44RPBF-BE3 datasheet, IRFZ44RPBF-BE3 pinout, IRFZ44RPBF-BE3 application, or IRFZ44RPBF-BE3 equivalent, key selection criteria include its ultra-low on-resistance, fully avalanche-rated capability, fast switching performance (14 ns turn-on delay), and Pb-free/halogen-free compliance per JEDEC J-STD-020.

Technical Context

This discrete N-channel MOSFET uses advanced silicon processing to achieve low RDS(on) per die area while maintaining rugged unclamped inductive switching capability (100 mJ EAS). Its gate threshold voltage (2.0–4.0 V) and transconductance (15 S typical) support robust drive in both hard-switched and linear-mode operation.

The device integrates a fast-recovery body diode with trr = 120–180 ns and Qrr = 0.53–0.80 μC, enabling efficient synchronous rectification and freewheeling in buck and half-bridge topologies without external diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Maximum blocking voltage for 48 V bus applications with margin
RDS(on)0.028 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 31 A continuous current
ID (continuous)50 A @ TC = 25 °C - Requires heatsinking above ~25 °C case temperature
Qg67 nC - Determines gate driver strength requirement for 100 kHz+ switching
EAS100 mJ - Supports reliable unclamped inductive load switching without snubbers
TJ max175 °C - Allows operation in high-ambient industrial environments with thermal derating
dV/dt rating4.5 V/ns - Resists false turn-on in high-noise motor drive or SMPS layouts

Pinout & Package

IRFZ44RPBF-BE3 is housed in a TO-220AB package with standard three-terminal layout: Drain connected to tab (electrically active), Gate and Source on leads. Thermal resistance RthJC = 1.0 °C/W enables direct mounting to heatsinks with thermal compound.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)High-side switch node / Power return pathElectrically connected to metal tab; must be isolated from chassis unless referenced to system ground
GateControl inputRequires 10 V drive for full enhancement; gate charge Qg = 67 nC dictates driver slew rate
SourceReference node / Current sense pointCommon return for gate drive and load current; internal source inductance LS = 7.5 nH affects switching waveform fidelity

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.028 Ω reduces I²R losses by >30% vs. legacy 60 V MOSFETs at same current density
Fully avalanche rated100 mJ single-pulse EAS eliminates need for external clamping in relay/snubberless designs
Dynamic dV/dt immunity4.5 V/ns rating prevents spurious turn-on during fast voltage transients in motor control
Linear-mode capableRated for continuous operation with VDS > 10 V and ID > 10 A-validated for audio amplifier output stage use
Pb-free & halogen-freeIRFZ44RPBF-BE3 meets JEDEC J-STD-020 moisture sensitivity level 1 and RoHS Directive 2011/65/EU

Applications

Motor DriveDC-DC Converter

Use Scenario: 24–48 V brushed DC motor H-bridge with PWM control up to 20 kHz.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional current up to 50 A peak.

Use Value: Low RDS(on) minimizes heat generation during stall conditions; avalanche rating absorbs back-EMF spikes without failure.

Use Scenario: 48 V input to 12 V/20 A synchronous buck converter in telecom power supply.

IC Role / Device Role / Timing Role: Primary high-side switch with 100 kHz switching frequency and 67 nC gate charge.

Use Value: Fast switching (14 ns td(on), 92 ns tf) and low Coss (920 pF) reduce switching losses and improve efficiency above 94%.

Audio AmplifierIndustrial Power Switch

Use Scenario: Class-AB output stage in 100 W stereo amplifier with ±35 V rails.

IC Role / Device Role / Timing Role: Linear-mode output transistor biased in active region for analog signal amplification.

Use Value: Confirmed drop-in replacement for IRFZ44 in audio designs; stable transconductance (15 S) ensures low distortion across temperature.

Use Scenario: Solid-state relay replacement in PLC output module switching 30 A resistive loads at 60 V.

IC Role / Device Role / Timing Role: Main power switch with galvanically isolated gate drive and thermal shutdown coordination.

Use Value: 175 °C TJ max and RthJC = 1.0 °C/W enable compact heatsink design; 200 A pulsed rating handles inrush currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP60NF06RDS(on) = 0.018 Ω @ 10 V, Qg = 85 nC, TO-220 packageLower on-resistance but higher gate charge increases driver complexityPreferred where conduction loss dominates and gate drive capability allows
IXTP50N065RDS(on) = 0.015 Ω @ 10 V, Qg = 52 nC, TO-220 packageHigher voltage rating (65 V), lower Qg, but not qualified for linear modeBest for high-efficiency SMPS where linear operation is unnecessary

Compared with STP60NF06 and IXTP50N065, the IRFZ44RPBF-BE3 offers balanced trade-offs: moderate RDS(on) and Qg, proven linear-mode reliability, and industry-standard TO-220AB mechanical compatibility-making it optimal for cost-sensitive industrial and audio designs requiring field-proven ruggedness.

Availability

IRFZ44RPBF-BE3 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, audio amplifiers, and industrial power switches requiring stable component supply and long-term manufacturability.

Supply support for IRFZ44RPBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRFZ44RPBF-BE3 belongs to Vishay's legacy high-current power MOSFET family designed for industrial switching, linear amplification, and ruggedized power conversion where avalanche capability and thermal stability are critical.

FAQ

What is the maximum continuous drain current for IRFZ44RPBF-BE3 at 100 °C case temperature?

The IRFZ44RPBF-BE3 supports 36 A continuous drain current at TC = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package; actual usable current depends on heatsink performance and ambient conditions. The IRFZ44RPBF-BE3 maintains RDS(on) stability up to 175 °C junction temperature, enabling robust operation under transient overloads.

Is IRFZ44RPBF-BE3 suitable for linear-mode (class-A/AB) amplifier applications?

Yes, the IRFZ44RPBF-BE3 is explicitly validated for linear-mode operation in audio amplifier output stages, as confirmed by Vishay's datasheet note stating it is a "drop in replacement of the IRFZ44, SiHFZ44 for linear / audio applications." Its stable transconductance (15 S typical), low thermal resistance, and 175 °C TJ rating support safe biasing in active region with adequate heatsinking. The IRFZ44RPBF-BE3 has been widely deployed in commercial audio designs for decades.

Does IRFZ44RPBF-BE3 have avalanche energy rating, and what is its value?

Yes, the IRFZ44RPBF-BE3 is fully avalanche rated with a single-pulse avalanche energy (EAS) of 100 mJ, tested under VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, and IAS = 51 A. This rating allows the IRFZ44RPBF-BE3 to safely absorb inductive energy without external snubbers in relay drivers, motor controls, and solenoid interfaces-reducing BOM count and improving system reliability.

What is the gate threshold voltage range for IRFZ44RPBF-BE3, and how does it affect drive requirements?

The gate-source threshold voltage (VGS(th)) for IRFZ44RPBF-BE3 is specified from 2.0 V to 4.0 V at ID = 250 μA. This range indicates strong enhancement-mode behavior with sufficient margin against noise-induced turn-on. For full enhancement, 10 V gate drive is required to achieve RDS(on) = 0.028 Ω. The IRFZ44RPBF-BE3 is not a logic-level MOSFET; using 5 V microcontroller drive would result in excessive conduction loss and thermal stress.

How does the body diode performance of IRFZ44RPBF-BE3 compare to discrete Schottky diodes in freewheeling applications?

The IRFZ44RPBF-BE3 features an integrated body diode with trr = 120–180 ns and Qrr = 0.53–0.80 μC, optimized for synchronous rectification in buck converters and motor freewheeling. While slower and less efficient than dedicated Schottky diodes, its body diode eliminates external components in half-bridge configurations and provides inherent matching with the MOSFET channel. The IRFZ44RPBF-BE3's dV/dt immunity (4.5 V/ns) also prevents snap-off oscillation during reverse recovery-enhancing system stability without added damping.

IRFZ44RPBF-BE3 Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
28mOhm @ 31A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRFZ44RPBF-BE3 FAQ

1.How can I place an order for IRFZ44RPBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ44RPBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ44RPBF-BE3 reliable?

The price and inventory of IRFZ44RPBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44RPBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRFZ44RPBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44RPBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ44RPBF-BE3?

IRFZ44RPBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ44RPBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ44RPBF-BE3?

For technical support, including IRFZ44RPBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44RPBF-BE3 requirements.

6.How does Aetrix verify that IRFZ44RPBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRFZ44RPBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44RPBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRFZ44RPBF-BE3?

All IRFZ44RPBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44RPBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ44RPBF-BE3 part is unused and in its original packaging.

Return procedure for IRFZ44RPBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFZ44RPBF-BE3 Tags

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