Vishay Siliconix IRFZ44STRLPBF

Overview

IRFZ44STRLPBF from Vishay Siliconix is a surface-mount N-channel power MOSFET in D2PAK (TO-263) package, rated for 60 V drain-source voltage, 50 A continuous drain current at 25 °C, and 0.028 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching with 67 nC total gate charge and supports high-current DC motor drives and DC-DC synchronous rectification.

For engineers reviewing the IRFZ44STRLPBF datasheet, IRFZ44STRLPBF pinout, IRFZ44STRLPBF application, or IRFZ44STRLPBF equivalent, key selection criteria include its 175 °C junction temperature rating, 200 A pulsed drain capability, body diode recovery time of 120–180 ns, and suitability for high-efficiency, high-reliability power conversion in industrial and automotive subsystems.

Technical Context

This device employs third-generation silicon process technology to minimize on-resistance per die area while maintaining rugged avalanche performance (100 mJ single-pulse E_AS). Its D2PAK thermal design enables 150 W maximum power dissipation at T_C = 25 °C with 1.0 °C/W junction-to-case thermal resistance.

The MOSFET features a fast intrinsic switching profile: 14 ns turn-on delay, 110 ns rise time, 45 ns turn-off delay, and 92 ns fall time under standardized 51 A/48 V test conditions. Its body diode supports 50 A continuous source-drain current and exhibits 2.5 V forward voltage at 51 A and 25 °C.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed thermal pad on underside; 3-pin configuration optimized for high-power PCB mounting and thermal transfer to copper pour.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ44NPbF, IRFZ44STRLPBF offers superior thermal dissipation and higher current density in automated assembly; versus SiHFZ44STRL-GE3, it shares identical performance but differs in environmental compliance-making IRFZ44STRLPBF suitable for legacy Pb-containing processes where RoHS exemption applies.

Availability

IRFZ44STRLPBF is available at Aetrix Electronics and suitable for DC motor control, UPS inverters, synchronous rectification, and automotive lighting drivers requiring stable component supply across long-lifecycle industrial programs.

Supply support for IRFZ44STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power management solutions for industrial, automotive, and computing markets.

The IRFZ44S family was designed as a high-current, surface-mount alternative to legacy TO-220 MOSFETs-targeting space-constrained, thermally demanding power conversion stages in motor drives and power supplies.

FAQ

What is the maximum continuous drain current rating for IRFZ44STRLPBF at 100 °C case temperature?

The IRFZ44STRLPBF supports 36 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual board layout and airflow conditions. The IRFZ44STRLPBF maintains 0.028 Ω R_DS(on) up to 150 °C junction temperature, enabling predictable loss modeling across its full operating range.

Does IRFZ44STRLPBF have a built-in body diode, and what are its key parameters?

Yes, the IRFZ44STRLPBF integrates a monolithic body diode with 50 A continuous forward current rating, 200 A pulsed capability, 2.5 V forward voltage at 51 A and 25 °C, and 120–180 ns reverse recovery time. These values are measured under standardized conditions (T_J = 25 °C, I_F = 51 A, dI/dt = 100 A/μs) and define its freewheeling performance in bridge configurations. The IRFZ44STRLPBF body diode is not optimized for ultrafast recovery but provides robust operation in hard-switched topologies.

Can IRFZ44STRLPBF be used in avalanche mode, and what is its rated energy?

Yes, the IRFZ44STRLPBF is fully rated for single-pulse avalanche operation with E_AS = 100 mJ at T_J = 25 °C. This rating assumes V_DD = 25 V, L = 44 μH, R_g = 25 Ω, and I_AS = 51 A per the test circuit in Figure 12. Repetitive avalanche is not guaranteed. Designers must ensure pulse width and duty cycle remain within SOA limits defined in Figure 7. The IRFZ44STRLPBF's avalanche capability eliminates need for external clamping in many inductive load switching applications.

What is the gate threshold voltage range for IRFZ44STRLPBF, and how does it affect drive requirements?

The IRFZ44STRLPBF has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA, meaning it begins conducting weakly at ~2 V but requires ≥10 V gate drive for full enhancement and minimal R_DS(on). Its 67 nC total gate charge necessitates a driver capable of sourcing/sinking ≥1 A peak current for sub-100 ns switching transitions. The IRFZ44STRLPBF is not a logic-level MOSFET; using 3.3 V or 5 V microcontroller outputs directly will result in excessive conduction loss and thermal runaway.

Is IRFZ44STRLPBF RoHS-compliant, and what does the 'PbF' suffix indicate?

The 'PbF' suffix in IRFZ44STRLPBF denotes lead-free termination with exemption under certain RoHS categories-specifically, it uses matte tin plating over copper leadframe but may contain lead in the die attach or other exempted elements per Annex III of EU Directive 2011/65/EU. It is not halogen-free. For fully RoHS- and halogen-free compliance, SiHFZ44STRL-GE3 is the direct alternative. The IRFZ44STRLPBF remains qualified for industrial applications where Pb-containing exemptions apply, and its electrical and thermal specifications are identical to the RoHS-compliant variant.