Vishay Siliconix IRFZ44STRRPBF
- Part No.:
- IRFZ44STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ44STRRPBF.pdf
- Description:
- MOSFET N-CH 60V 50A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:2,060
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Product details
Overview
IRFZ44STRRPBF from Vishay Siliconix is a 60 V, 50 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.028 Ω RDS(on) at VGS = 10 V, 67 nC total gate charge, and 175 °C maximum junction temperature. It serves as a high-current switching element in DC-DC converters, motor drives, and power inverters requiring fast turn-on/turn-off and robust avalanche capability.
For engineers reviewing the IRFZ44STRRPBF datasheet, IRFZ44STRRPBF pinout, IRFZ44STRRPBF application, or IRFZ44STRRPBF equivalent, key selection criteria include its 200 A pulsed drain current rating, 100 mJ single-pulse avalanche energy, low thermal resistance (RthJC = 1.0 °C/W), and RoHS-compliant lead-free/halogen-free construction per Vishay S21-0932-Rev. D.
Technical Context
This device belongs to Vishay's third-generation silicon power MOSFET family optimized for low conduction loss and high-speed switching. Its planar vertical structure uses advanced processing to minimize on-resistance per die area while maintaining ruggedness against repetitive avalanche stress and diode reverse recovery transients.
The IRFZ44STRRPBF integrates an intrinsic body diode with 2.5 V forward voltage at 51 A and 120–180 ns reverse recovery time, enabling synchronous rectification and freewheeling operation without external diodes in many topologies. Gate drive requirements are defined by 18 nC gate-source and 25 nC gate-drain charge components under standard 48 V, 51 A test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V nominal rails |
| RDS(on) | 0.028 Ω @ VGS = 10 V - Enables ≤1.5 W conduction loss at 7.5 A continuous current in PCB-mounted applications |
| ID (continuous) | 50 A @ TC = 25 °C - Requires heatsinking or forced-air cooling above ~36 A at 100 °C case temperature |
| Qg | 67 nC - Determines gate driver current demand (~67 mA average over 1 μs switching interval) |
| EAS | 100 mJ - Supports unclamped inductive switching in motor control without external snubbers |
| TJ max | 175 °C - Allows operation in high-ambient industrial environments with derated current |
| RthJC | 1.0 °C/W - Enables direct thermal coupling to heatsink via exposed drain pad for efficient power dissipation |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad on bottom side for thermal and electrical connection. Three terminals: Gate (G), Drain (D), Source (S). Drain connects directly to the large copper tab for low-inductance, high-current paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Controls channel conduction; requires 10 V drive for full enhancement; ±20 V absolute max rating |
| D | Drain | Main high-side power terminal; electrically and thermally connected to exposed metal tab |
| S | Source | Reference node for gate drive and current return path; tied to PCB ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 0.028 Ω enables <1.5 W conduction loss at 7.5 A, reducing thermal load in compact power stages |
| Fast switching | 14 ns turn-on delay + 110 ns rise time supports >100 kHz PWM operation with minimal switching loss |
| 175 °C operation | Extended junction temperature range allows use in sealed enclosures or high-ambient industrial settings |
| Avalanche rated | 100 mJ single-pulse EAS permits reliable operation during inductive load turn-off without snubber circuits |
| RoHS/halogen-free | Complies with global environmental regulations; no lead or brominated flame retardants in package or terminations |
Applications
| DC-DC Converters | Motor Drives |
|---|---|
Use Scenario: High-efficiency buck converter in telecom power supply delivering 12 V/30 A from 48 V input. IC Role / Device Role / Timing Role: Primary high-side switch handling 30 A peak current with 100 kHz PWM frequency. Use Value: Low RDS(on) reduces conduction loss; fast switching minimizes dead-time losses and improves efficiency above 94 %. | Use Scenario: H-bridge driver for 24 V brushed DC motor in automated gate controller. IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and speed via PWM. Use Value: Robust body diode handles flyback energy during PWM off-time; 200 A pulsed rating absorbs stall currents. |
| Power Inverters | Industrial Power Supplies |
Use Scenario: Half-bridge stage in 1 kW solar microinverter converting 60 V DC to 120 V AC. IC Role / Device Role / Timing Role: Switching transistor in high-frequency inverter leg with synchronous rectification. Use Value: 60 V VDS margin accommodates voltage spikes; 175 °C rating ensures reliability under sustained load. | Use Scenario: Main switching FET in 48 V input, 5 V/60 A server VRM with multi-phase architecture. IC Role / Device Role / Timing Role: Phase-leg power switch operating at 500 kHz with paralleled layout. Use Value: Exposed drain pad enables direct thermal interface to heatsink; low Qg/Qgd ratio improves gate drive efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60NF06 | 60 V, 60 A, RDS(on) = 0.018 Ω, TO-220 package, higher current but through-hole only | Requires PCB through-hole mounting and larger footprint; better for lower-frequency, higher-current designs | Choose STP60NF06 when board space allows through-hole and higher continuous current is needed without surface-mount constraints |
| IXTP50N065 | 65 V, 50 A, RDS(on) = 0.015 Ω, TO-220 package, enhanced avalanche rating (EAS = 220 mJ) | Superior avalanche ruggedness but lacks D2PAK thermal performance; not surface-mount compatible | Prefer IXTP50N065 where unclamped inductive energy exceeds 100 mJ and thermal design permits TO-220 mounting |
Compared with STP60NF06 and IXTP50N065, the IRFZ44STRRPBF offers superior thermal management via D2PAK's 1.0 °C/W RthJC, making it optimal for high-power density surface-mount designs where heatsinking efficiency and board-level integration are critical.
Availability
IRFZ44STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, power inverters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRFZ44STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRFZ44STRRPBF belongs to Vishay's third-generation power MOSFET product line engineered for low on-resistance, fast switching, and rugged avalanche performance in high-current surface-mount power conversion systems.
FAQ
What is the maximum continuous drain current rating for IRFZ44STRRPBF at 100 °C case temperature?
The IRFZ44STRRPBF supports 36 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated with actual PCB layout, copper area, and airflow. The IRFZ44STRRPBF maintains safe operation up to 175 °C junction temperature, allowing flexible thermal design margins.
Does IRFZ44STRRPBF have a built-in body diode, and what are its key parameters?
Yes, the IRFZ44STRRPBF integrates a parasitic body diode with 2.5 V forward voltage at 51 A and 120–180 ns reverse recovery time (TJ = 25 °C). Its 50 A continuous source-drain current rating supports freewheeling in half-bridge and synchronous rectifier configurations. The IRFZ44STRRPBF body diode is not optimized for ultra-fast recovery but provides sufficient performance for standard PWM motor and converter applications.
What is the gate threshold voltage range for IRFZ44STRRPBF, and how does it affect drive requirements?
The IRFZ44STRRPBF has a gate threshold voltage (VGS(th)) range of 2.0 V to 4.0 V at ID = 250 μA. Full enhancement requires ≥10 V gate drive to achieve rated RDS(on) of 0.028 Ω. Below 4.5 V, the device operates in linear mode with high conduction loss; thus, the IRFZ44STRRPBF must be driven with a logic-level or dedicated gate driver capable of sourcing/sinking 67 nC total charge.
Is IRFZ44STRRPBF suitable for avalanche-prone circuits like relay driving or inductive load switching?
Yes, the IRFZ44STRRPBF is rated for 100 mJ single-pulse avalanche energy (EAS) under defined test conditions (VDD = 25 V, L = 44 μH, IAS = 51 A). This makes it suitable for controlled unclamped inductive switching in relay drivers, solenoid controls, and motor phase switching. However, repetitive avalanche operation is not guaranteed, so the IRFZ44STRRPBF should be used with appropriate voltage clamping or snubbing for sustained inductive stress.
What package type and thermal characteristics define the IRFZ44STRRPBF mounting requirements?
The IRFZ44STRRPBF uses the D2PAK (TO-263) surface-mount package with an exposed drain pad that serves as both thermal and electrical connection point. Its maximum junction-to-case thermal resistance is 1.0 °C/W, requiring direct thermal interface to a heatsink or large copper pour. Recommended minimum PCB pads follow Vishay AN826 guidelines, and soldering peak temperature must not exceed 300 °C for 10 seconds. The IRFZ44STRRPBF is not compatible with through-hole assembly.
IRFZ44STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 28mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFZ44STRRPBF FAQ
1.How can I place an order for IRFZ44STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ44STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ44STRRPBF reliable?
The price and inventory of IRFZ44STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ44STRRPBF is usually 5 days.
3.What payment methods are accepted for IRFZ44STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ44STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ44STRRPBF?
IRFZ44STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ44STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ44STRRPBF?
For technical support, including IRFZ44STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ44STRRPBF requirements.
6.How does Aetrix verify that IRFZ44STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ44STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ44STRRPBF meets industry standards.
7.What is the process for return or replacement of IRFZ44STRRPBF?
All IRFZ44STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ44STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ44STRRPBF part is unused and in its original packaging.
Return procedure for IRFZ44STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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