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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ48L

Name: IRFZ48L
Brand: Vishay Siliconix
SKU: IRFZ48L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFZ48L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFZ48L.pdf

Description:: MOSFET N-CH 60V 50A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFZ48L from Vishay Siliconix is a 60 V, 50 A N-channel enhancement-mode power MOSFET in low-profile through-hole I2PAK (TO-262) package, featuring 0.018 Ω R_DS(on) at V_GS = 10 V, 110 nC total gate charge, and 175 °C maximum junction temperature - designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFZ48L datasheet, IRFZ48L pinout, IRFZ48L application, or IRFZ48L equivalent, this device supports fast-switching, avalanche-rated operation up to 100 mJ, and robust body diode recovery (t_rr = 120–180 ns), making it suitable for hard-switched industrial power stages requiring thermal resilience and pulsed current capability.

Technical Context

This third-generation silicon power MOSFET uses advanced planar processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (2.0–4.0 V) and transconductance (27 S typical) support direct TTL/CMOS drive with minimal external buffering.

The device integrates a fast-recovery body diode with 2.0 V forward drop at 72 A and controlled reverse recovery charge (Q_rr = 0.5–0.8 μC), enabling reliable synchronous rectification and freewheeling in buck and H-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 48 V bus systems and 24 V automotive auxiliary rails.
R_DS(on) @ V_GS = 10 V	0.018 Ω - Enables ≤ 39 W conduction loss at 50 A continuous drain current under heatsink-limited conditions.
Q_g max	110 nC - Determines gate driver power requirement (~1.1 mW per MHz of switching frequency at 10 V drive).
I_D continuous @ T_C = 25 °C	50 A - Sustained current rating achievable with adequate PCB copper area or heatsink mounting per TO-262 thermal profile.
E_AS	100 mJ - Single-pulse avalanche energy rating supporting robustness against inductive load turn-off transients.
t_rr	120–180 ns - Body diode reverse recovery time enabling <100 kHz hard-switched operation without excessive di/dt-induced voltage overshoot.
T_J max	175 °C - Extended junction temperature range allows operation in sealed enclosures or high-ambient industrial environments.

Pinout & Package

IRFZ48L is housed in an I2PAK (TO-262) low-profile through-hole package with 3 leads: Gate (G), Drain (D), and Source (S). The exposed drain tab provides mechanical anchoring and thermal conduction to the PCB ground plane or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 0–10 V logic-level drive; requires ≥ 25 Ω series gate resistor to damp ringing during fast transitions.
D	Drain connection / heat sink interface	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced; primary current path into device.
S	Source return node	Common reference for gate drive and load current return; connects directly to PCB ground plane or source rail trace.

Key Features

Feature	Design Value
Low-profile through-hole packaging	I2PAK (TO-262) enables vertical mounting in space-constrained industrial controls without surface-mount reflow constraints.
175 °C operating junction temperature	Supports uninterrupted operation in ambient temperatures up to 125 °C when derated per R_thJC = 0.8 °C/W and PCB thermal design.
Fast switching with low Q_gd/Q_gs ratio	Q_gd = 36 nC and Q_gs = 29 nC yield Miller plateau duration favorable for stable gate drive in high-dV/dt environments.
Rugged unclamped inductive switching (UIS)	Rated for 100 mJ single-pulse avalanche energy, eliminating need for external snubbers in relay or solenoid drive circuits.
Optimized body diode recovery	Q_rr = 0.5–0.8 μC and t_rr = 120–180 ns reduce switching losses and EMI in freewheeling paths versus standard MOSFETs.

Applications

Industrial Motor Drive	DC-DC Converter Primary Switch
Use Scenario: Half-bridge gate driver stage controlling 24–48 V brushed DC motors in PLC-controlled conveyor systems. IC Role / Device Role / Timing Role: High-side/low-side power switch handling 30–50 A peak load current with 20–50 kHz PWM switching. Use Value: 0.018 Ω R_DS(on) minimizes I²R heating during sustained torque delivery, while 175 °C T_J rating ensures reliability under full-load thermal cycling.	Use Scenario: Primary-side switch in isolated 48 V input, 12 V output flyback converter for industrial sensor power supplies. IC Role / Device Role / Timing Role: Main switching element conducting 50 A pulses with 100 ns–250 ns rise/fall times under 100 kHz operation. Use Value: Low Q_g (110 nC) and fast t_r/t_f enable high-frequency operation with reduced driver losses, while UIS rating protects against transformer leakage inductance spikes.
Solenoid & Relay Driver	UPS Inverter Stage
Use Scenario: Direct-drive interface between microcontroller GPIO and 48 V/20 A solenoid valves in factory automation panels. IC Role / Device Role / Timing Role: Unclamped inductive load switch absorbing stored energy via integrated avalanche-rated body diode. Use Value: 100 mJ E_AS eliminates need for external TVS or RC snubber networks, reducing BOM count and board area in DIN-rail mounted controllers.	Use Scenario: Output bridge switch in 1 kVA line-interactive UPS inverter delivering clean 230 VAC sine-wave output. IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology handling bidirectional current during battery backup mode. Use Value: Fast body diode recovery (t_rr ≤ 180 ns) prevents shoot-through during dead-time transitions, improving waveform fidelity and reducing THD in critical loads.

Industrial Motor Drive

DC-DC Converter Primary Switch

Use Scenario: Half-bridge gate driver stage controlling 24–48 V brushed DC motors in PLC-controlled conveyor systems.

IC Role / Device Role / Timing Role: High-side/low-side power switch handling 30–50 A peak load current with 20–50 kHz PWM switching.

Use Value: 0.018 Ω R_DS(on) minimizes I²R heating during sustained torque delivery, while 175 °C T_J rating ensures reliability under full-load thermal cycling.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output flyback converter for industrial sensor power supplies.

IC Role / Device Role / Timing Role: Main switching element conducting 50 A pulses with 100 ns–250 ns rise/fall times under 100 kHz operation.

Use Value: Low Q_g (110 nC) and fast t_r/t_f enable high-frequency operation with reduced driver losses, while UIS rating protects against transformer leakage inductance spikes.

Solenoid & Relay Driver

UPS Inverter Stage

Use Scenario: Direct-drive interface between microcontroller GPIO and 48 V/20 A solenoid valves in factory automation panels.

IC Role / Device Role / Timing Role: Unclamped inductive load switch absorbing stored energy via integrated avalanche-rated body diode.

Use Value: 100 mJ E_AS eliminates need for external TVS or RC snubber networks, reducing BOM count and board area in DIN-rail mounted controllers.

Use Scenario: Output bridge switch in 1 kVA line-interactive UPS inverter delivering clean 230 VAC sine-wave output.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge topology handling bidirectional current during battery backup mode.

Use Value: Fast body diode recovery (t_rr ≤ 180 ns) prevents shoot-through during dead-time transitions, improving waveform fidelity and reducing THD in critical loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V, 55 A, R_DS(on) = 0.014 Ω, TO-220 package, lower Q_g (72 nC), but only rated to 150 °C T_J.	Requires larger heatsink due to TO-220 thermal resistance; unsuitable for sealed enclosures above 105 °C ambient.	Select when lower conduction loss dominates over thermal envelope and board height constraints.
IXTH50N60L2	600 V, 50 A, R_DS(on) = 0.045 Ω, TO-247 package, higher voltage rating but 2.5× higher R_DS(on) and 140 nC Q_g.	Over-specified for 48 V systems; introduces unnecessary switching loss and gate drive burden.	Prefer only if future-proofing for higher bus voltages or legacy TO-247 footprint compatibility is mandatory.

Compared with STP55NF06L and IXTH50N60L2, the IRFZ48L uniquely balances low on-resistance, industry-standard I2PAK form factor, 175 °C thermal headroom, and proven UIS ruggedness - making it optimal for space- and temperature-constrained 48 V industrial power stages where reliability trumps marginal R_DS(on) reduction.

Availability

IRFZ48L is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and solenoid control systems requiring stable component supply across multi-year production cycles.

Supply support for IRFZ48L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRFZ48L belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-temperature switching in ruggedized industrial equipment - emphasizing avalanche robustness, thermal stability, and low-profile mounting flexibility.

FAQ

What is the maximum continuous drain current rating for IRFZ48L at 100 °C case temperature?

The IRFZ48L maintains a continuous drain current rating of 50 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its ability to sustain full-rated current under aggressive thermal conditions when mounted on a properly sized heatsink or thermally enhanced PCB, leveraging its 0.8 °C/W junction-to-case thermal resistance and 175 °C maximum junction temperature.

Does IRFZ48L support logic-level gate drive?

The IRFZ48L is not a logic-level MOSFET; its gate threshold voltage ranges from 2.0 V to 4.0 V, and it is characterized for R_DS(on) at V_GS = 10 V. While it may partially enhance at 5 V, full on-state performance (0.018 Ω) requires 10 V gate drive. For true 5 V logic compatibility, consider Vishay's SiHFZ44L or similar logic-level variants.

What is the recommended gate resistor value for IRFZ48L in a 50 kHz PWM motor drive?

A 25 Ω series gate resistor is recommended for IRFZ48L in 50 kHz motor drive applications, based on typical test conditions in the datasheet (R_g = 25 Ω used for Q_g, t_d(on), and t_r measurements). This value balances switching speed (to minimize transition losses) and gate ringing suppression, especially when driving inductive loads with fast di/dt.

Can IRFZ48L replace IRFZ48 in existing designs?

Yes - the IRFZ48L is a direct replacement for the legacy IRFZ48 in I2PAK (TO-262) form factor, sharing identical electrical specifications, pinout, and thermal ratings. The "L" suffix denotes Vishay's lead (Pb)-free and halogen-free construction, with no functional or performance deviation from the original IRFZ48 part.

What is the body diode forward voltage of IRFZ48L at 72 A and 25 °C?

The body diode forward voltage (V_SD) of IRFZ48L is specified as 2.0 V maximum at T_J = 25 °C, I_S = 72 A, and V_GS = 0 V. This low forward drop supports efficient freewheeling in half-bridge and synchronous rectifier configurations without requiring external diode supplementation.

IRFZ48L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3

IRFZ48L FAQ

1.How can I place an order for IRFZ48L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ48L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ48L reliable?

The price and inventory of IRFZ48L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48L is usually 5 days.

3.What payment methods are accepted for IRFZ48L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ48L?

IRFZ48L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ48L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ48L?

For technical support, including IRFZ48L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48L requirements.

6.How does Aetrix verify that IRFZ48L is sourced from the original manufacturer or authorized distributors?

All IRFZ48L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48L meets industry standards.

7.What is the process for return or replacement of IRFZ48L?

All IRFZ48L units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ48L part is unused and in its original packaging.

Return procedure for IRFZ48L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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