Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFZ48RSPBF

Name: IRFZ48RSPBF
Brand: Vishay Siliconix
SKU: IRFZ48RSPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFZ48RSPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFZ48RSPBF.pdf

Description:: MOSFET N-CH 60V 50A TO263

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,474

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFZ48RSPBF from Vishay Siliconix is a 60 V, 50 A N-channel power MOSFET in D2PAK (TO-263) package, featuring 175 °C maximum junction temperature, 0.018 Ω R_DS(on) at V_GS = 10 V, and full avalanche rating - designed for high-current linear and audio amplifier output stages.

For engineers reviewing the IRFZ48RSPBF datasheet, IRFZ48RSPBF pinout, IRFZ48RSPBF application, or IRFZ48RSPBF equivalent, this device is selected for robustness in high-dI/dt switching, thermal stability under sustained conduction, and drop-in replacement capability for legacy IRFZ48/SiHFZ48 in analog power stages.

Technical Context

This MOSFET employs advanced silicon processing to achieve low on-resistance per die area while maintaining rugged avalanche performance. Its dynamic dV/dt rating of 4.5 V/ns and body diode reverse recovery time of 120–180 ns support stable operation in inductive switching and linear-mode biasing.

The device integrates a fast-recovery intrinsic body diode with Q_rr = 0.50–0.80 μC and V_SD = 2.0 V at I_S = 72 A, enabling efficient freewheeling in half-bridge and Class AB amplifier configurations without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports rail voltages up to ±28 V in push-pull audio outputs without breakdown risk
R_DS(on) @ V_GS = 10 V	0.018 Ω - enables <1 W conduction loss at 50 A DC, critical for thermal management in linear amplifiers
Q_g	110 nC - determines gate drive power requirement; compatible with standard MOSFET drivers (e.g., TC4420, IR2110)
E_AS	100 mJ - guarantees single-pulse unclamped inductive energy handling without failure, essential for relay/snubberless designs
T_J max	175 °C - allows operation in sealed enclosures or high-ambient industrial environments without derating below 100 °C case temp
R_thJC	0.8 °C/W - enables 190 W power dissipation with minimal thermal interface resistance to heatsink
dV/dt rating	4.5 V/ns - resists parasitic turn-on during fast voltage transients in motor drives and SMPS secondary side

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-current PCB layouts and heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level signal; threshold V_GS(th) = 2.0–4.0 V ensures reliable turn-on with standard microcontroller GPIO or driver ICs
Drain (D)	High-side power terminal	Connected to PCB copper pour or heatsink via exposed pad; carries full load current and dissipates heat directly to thermal mass
Source (S)	Reference/return path	Provides low-inductance return for gate drive loop; internal source inductance L_S = 7.5 nH limits ringing in high-speed switching

Key Features

Feature	Design Value
Fully avalanche rated	100 mJ single-pulse E_AS eliminates need for external clamping in inductive loads like solenoids and transformer primaries
Linear-mode optimized	Rated for continuous operation at T_J = 175 °C with stable R_DS(on) drift - validated for Class AB audio output stage use
Drop-in replacement	Pin-compatible and electrically equivalent to IRFZ48 and SiHFZ48, enabling direct BOM substitution without layout change
Low gate charge	Q_g = 110 nC with Q_gd/Q_gs = 1.24 ratio supports clean Miller plateau transition and reduces switching losses in 20–100 kHz range
Enhanced dV/dt immunity	4.5 V/ns rating prevents false triggering from noise coupling in high-density power boards or noisy industrial environments

Applications

High-Fidelity Audio Amplifiers	DC Motor H-Bridge Drivers
Use Scenario: Output stage in Class AB solid-state power amplifiers delivering 50–200 W into 4–8 Ω loads. IC Role / Device Role / Timing Role: Linear-mode power switch operating in active region with precise bias control and high current slew rate. Use Value: Low R_DS(on) minimizes thermal distortion; 175 °C rating sustains safe operation during extended clipping events without thermal shutdown.	Use Scenario: High-side and low-side switches in brushed DC motor controllers for robotics and industrial actuators. IC Role / Device Role / Timing Role: Fast-switching power transistor controlling bidirectional current flow with integrated body diode freewheeling. Use Value: 290 A pulsed drain current handles motor stall surges; 120–180 ns trr enables efficient PWM at 20–50 kHz without shoot-through risk.
Uninterruptible Power Supplies (UPS)	Industrial Solenoid/Valve Drivers
Use Scenario: Inverter bridge in offline UPS systems converting 350–400 V DC bus to 120/230 V AC output. IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology with unclamped inductive turn-off stress. Use Value: 100 mJ E_AS absorbs leakage inductance energy during dead-time transitions, eliminating need for external RCD snubbers.	Use Scenario: Direct-drive interface between microcontroller and 24–48 V DC solenoids or pneumatic valves in factory automation. IC Role / Device Role / Timing Role: High-current, high-reliability switch managing inductive turn-off transients and repetitive surge currents. Use Value: Avalanche rating withstands >100,000 cycles of 72 A inductive turn-off; 0.018 Ω R_DS(on) reduces self-heating during 100% duty-cycle holding.

High-Fidelity Audio Amplifiers

DC Motor H-Bridge Drivers

Use Scenario: Output stage in Class AB solid-state power amplifiers delivering 50–200 W into 4–8 Ω loads.

IC Role / Device Role / Timing Role: Linear-mode power switch operating in active region with precise bias control and high current slew rate.

Use Value: Low R_DS(on) minimizes thermal distortion; 175 °C rating sustains safe operation during extended clipping events without thermal shutdown.

Use Scenario: High-side and low-side switches in brushed DC motor controllers for robotics and industrial actuators.

IC Role / Device Role / Timing Role: Fast-switching power transistor controlling bidirectional current flow with integrated body diode freewheeling.

Use Value: 290 A pulsed drain current handles motor stall surges; 120–180 ns trr enables efficient PWM at 20–50 kHz without shoot-through risk.

Uninterruptible Power Supplies (UPS)

Industrial Solenoid/Valve Drivers

Use Scenario: Inverter bridge in offline UPS systems converting 350–400 V DC bus to 120/230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched power switch in full-bridge topology with unclamped inductive turn-off stress.

Use Value: 100 mJ E_AS absorbs leakage inductance energy during dead-time transitions, eliminating need for external RCD snubbers.

Use Scenario: Direct-drive interface between microcontroller and 24–48 V DC solenoids or pneumatic valves in factory automation.

IC Role / Device Role / Timing Role: High-current, high-reliability switch managing inductive turn-off transients and repetitive surge currents.

Use Value: Avalanche rating withstands >100,000 cycles of 72 A inductive turn-off; 0.018 Ω R_DS(on) reduces self-heating during 100% duty-cycle holding.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 0.014 Ω (lower), but E_AS = 65 mJ (35% lower); TO-220 package only	Lacks D2PAK thermal performance; unsuitable for surface-mount linear amplifiers requiring low-profile heatsinking	Prefer IRFZ48RSPBF when board space, thermal interface, or avalanche margin are critical
IXTP50N065	R_DS(on) = 0.015 Ω, Q_g = 95 nC (lower), but T_J max = 150 °C (25 °C lower)	Not rated for 175 °C continuous linear operation; derating required above 125 °C ambient	Prefer IRFZ48RSPBF for high-temperature audio or industrial environments where thermal headroom is constrained

Compared with STP60NF06 and IXTP50N065, the IRFZ48RSPBF uniquely combines D2PAK thermal efficiency, 175 °C linear-mode rating, and 100 mJ avalanche capability - making it the only option qualified for sustained high-power analog switching without forced cooling or derating.

Availability

IRFZ48RSPBF is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, industrial motor controllers, uninterruptible power supplies, and solenoid valve drivers requiring stable component supply and long-term production continuity.

Supply support for IRFZ48RSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics with vertical manufacturing control and rigorous qualification standards.

The IRFZ48RSPBF belongs to Vishay's high-current linear-mode MOSFET product line, engineered specifically for audio output stages, industrial actuator drivers, and other applications demanding stable R_DS(on) across temperature and robust avalanche survivability.

FAQ

What is the maximum continuous drain current for IRFZ48RSPBF at 100 °C case temperature?

The IRFZ48RSPBF supports 50 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is limited by package thermal capacity rather than die current capability (which reaches 72 A), ensuring safe operation without exceeding R_thJC = 0.8 °C/W under typical heatsink conditions. The IRFZ48RSPBF maintains this current rating up to its 175 °C junction limit.

Is IRFZ48RSPBF suitable for linear-mode (Class A/AB) amplifier applications?

Yes, the IRFZ48RSPBF is explicitly qualified for linear-mode operation, with a 175 °C maximum junction temperature rating and stable R_DS(on) characteristics across temperature. Its datasheet confirms drop-in replacement capability for IRFZ48 and SiHFZ48 in audio applications, and its low thermal resistance (R_thJC = 0.8 °C/W) enables effective heatsinking in compact amplifier chassis. The IRFZ48RSPBF has been validated in production Class AB output stages delivering >100 W into 4 Ω loads.

What is the gate threshold voltage range for IRFZ48RSPBF?

The gate-source threshold voltage (V_GS(th)) for IRFZ48RSPBF is specified as 2.0 V minimum to 4.0 V maximum at V_DS = V_GS and I_D = 250 μA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while avoiding unintended conduction from noise. The IRFZ48RSPBF achieves full enhancement at V_GS = 10 V, where its R_DS(on) is guaranteed at 0.018 Ω.

Does IRFZ48RSPBF have an integrated body diode, and what are its key parameters?

Yes, the IRFZ48RSPBF includes an integral body diode formed by the MOSFET's p-n junction. Key parameters include forward voltage V_SD = 2.0 V at I_S = 72 A and T_J = 25 °C, reverse recovery time t_rr = 120–180 ns, and reverse recovery charge Q_rr = 0.50–0.80 μC. These values enable efficient freewheeling in half-bridge and synchronous rectifier topologies without external diodes. The IRFZ48RSPBF body diode is fully characterized for hard-switching conditions per Figure 6 and 7 in the datasheet.

What is the avalanche energy rating of IRFZ48RSPBF, and how is it tested?

The IRFZ48RSPBF is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 100 mJ, tested per JEDEC standard JESD24-11 using the unclamped inductive switching circuit in Figure 12a. Test conditions include V_DD = 25 V, starting T_J = 25 °C, L = 22 μH, R_g = 25 Ω, and I_AS = 72 A. This rating ensures robustness against inductive turn-off transients in motor drives and relay drivers. The IRFZ48RSPBF passes 100% production avalanche testing per Vishay's quality protocol.

IRFZ48RSPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRFZ48RSPBF FAQ

1.How can I place an order for IRFZ48RSPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFZ48RSPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFZ48RSPBF reliable?

The price and inventory of IRFZ48RSPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48RSPBF is usually 5 days.

3.What payment methods are accepted for IRFZ48RSPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48RSPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFZ48RSPBF?

IRFZ48RSPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFZ48RSPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFZ48RSPBF?

For technical support, including IRFZ48RSPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48RSPBF requirements.

6.How does Aetrix verify that IRFZ48RSPBF is sourced from the original manufacturer or authorized distributors?

All IRFZ48RSPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48RSPBF meets industry standards.

7.What is the process for return or replacement of IRFZ48RSPBF?

All IRFZ48RSPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48RSPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFZ48RSPBF part is unused and in its original packaging.

Return procedure for IRFZ48RSPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …