Vishay Siliconix IRFZ48S

Overview

IRFZ48S from Vishay Siliconix is a surface-mount N-channel power MOSFET designed for high-current switching in DC-DC converters, motor drives, and power supplies. It delivers 60 V drain-source voltage rating, 50 A continuous drain current at TC = 25 °C, and ultra-low 0.018 Ω RDS(on) at VGS = 10 V - enabling efficient high-power operation in compact PCB layouts.

For engineers reviewing the IRFZ48S datasheet, IRFZ48S pinout, IRFZ48S application, or IRFZ48S equivalent, this device is selected for its fast switching (8.1 ns turn-on delay), rugged 175 °C junction temperature capability, and D2PAK (TO-263) package optimized for thermal performance and high-current routing in industrial and automotive power stages.

Technical Context

The IRFZ48S employs third-generation silicon process technology to achieve low on-resistance per die area while maintaining robust avalanche energy rating (100 mJ). Its gate charge profile (Qg = 110 nC, Qgd = 36 nC) supports controlled, low-loss hard-switching in synchronous buck and half-bridge topologies.

Designed for surface-mount implementation, the IRFZ48S integrates a fast-recovery body diode (trr = 120–180 ns, Qrr = 0.5–0.8 μC) and exhibits stable threshold voltage (VGS(th) = 2.0–4.0 V) across temperature - critical for gate-drive compatibility with standard 10 V logic-level controllers.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the internal die drain and serves as primary heat path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP60NF06 and IXTP50N065, the IRFZ48S uniquely combines D2PAK surface-mount compatibility, 0.018 Ω on-resistance, and 175 °C operation - making it optimal for thermally constrained, high-current SMT power stages where PCB real estate and thermal management are co-optimized.

Availability

IRFZ48S is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFZ48S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and automotive applications.

The IRFZ48S belongs to Vishay's third-generation power MOSFET family engineered for ultra-low on-resistance and fast switching in high-efficiency power conversion systems - targeting applications where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current rating for IRFZ48S at 100 °C case temperature?

The IRFZ48S maintains a continuous drain current rating of 50 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and 0.8 °C/W junction-to-case thermal resistance, allowing sustained high-current operation with appropriate heatsinking - a key advantage over many competing 60 V MOSFETs that derate significantly above 25 °C.

Does IRFZ48S support logic-level gate drive?

No, IRFZ48S is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it is fully enhanced and achieves rated RDS(on) only at VGS = 10 V. Driving it with 5 V logic will result in incomplete turn-on and excessive conduction loss - IRFZ48S requires a 10 V gate drive source for optimal performance, as confirmed by the RDS(on) test condition in the datasheet.

What is the avalanche energy rating of IRFZ48S and how is it tested?

The IRFZ48S has a single-pulse avalanche energy rating (EAS) of 100 mJ, measured under conditions of VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω, and IAS = 72 A per Figure 12 in the datasheet. This rating validates its ability to safely absorb inductive energy during unclamped switching events - a critical parameter for reliability in motor and relay driving applications.

Can IRFZ48S be used in parallel configurations?

Yes, IRFZ48S supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing as junction temperature rises. However, matched gate resistors and symmetrical PCB layout are required to ensure balanced dynamic current distribution - especially important given its 110 nC total gate charge and 36 nC gate-drain charge, which influence switching synchronization.

What is the recommended PCB pad layout for IRFZ48S in D2PAK package?

Vishay recommends a minimum copper pad of 0.420" × 0.355" (10.67 mm × 9.02 mm) for the drain tab of IRFZ48S, with thermal vias to inner ground/power planes. The AN826 document specifies 0.145" (3.68 mm) minimum spacing between pads and outlines exact dimensions for solder mask and paste stencil - adherence ensures optimal thermal resistance (<0.8 °C/W) and mechanical reliability during reflow and thermal cycling.