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Vishay Siliconix IRFZ48STRLPBF
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- Part No.:
- IRFZ48STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFZ48STRLPBF.pdf
- Description:
- MOSFET N-CHANNEL 60V
- Quantity:
- Payment:
- Shipping:
Inventory:653
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Product details
Overview
IRFZ48STRLPBF from Vishay Siliconix is a 60 V, 50 A N-channel surface-mount power MOSFET in D2PAK (TO-263) package, featuring 0.018 Ω RDS(on) at VGS = 10 V, 110 nC total gate charge, and 175 °C maximum junction temperature. It delivers high-current switching for DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the IRFZ48STRLPBF datasheet, IRFZ48STRLPBF pinout, IRFZ48STRLPBF application, or IRFZ48STRLPBF equivalent, this page provides verified electrical parameters, thermal performance data, package mechanical details, and real-world design context for high-efficiency power stage implementation.
Technical Context
This MOSFET uses third-generation silicon process technology to achieve ultra-low on-resistance per die area while maintaining rugged avalanche capability (100 mJ single-pulse EAS) and fast switching (250 ns rise/fall times). Its D2PAK package enables high-power dissipation (190 W at TC = 25 °C) with low junction-to-case thermal resistance (0.8 °C/W).
The device supports high di/dt operation (≤200 A/μs) and exhibits controlled body diode recovery (trr = 120–180 ns, Qrr = 0.5–0.8 μC), making it suitable for hard-switched topologies where reverse recovery behavior impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V bus systems and automotive 36 V transients. |
| RDS(on) | 0.018 Ω @ VGS = 10 V - Enables <1 W conduction loss at 7.5 A RMS in typical 50 A peak applications. |
| Qg | 110 nC - Determines gate drive power requirement; requires ≥2 A peak driver for 100 kHz switching with 10 V swing. |
| ID (continuous) | 50 A @ TC = 25 °C - Sustains high DC current when mounted on adequate copper area (1"² FR-4 PCB). |
| EAS | 100 mJ - Withstands unclamped inductive energy events without failure, supporting robust overcurrent protection. |
| TJ(max) | 175 °C - Allows operation in high-ambient environments such as enclosed industrial enclosures or under-hood automotive zones. |
| RthJC | 0.8 °C/W - Enables precise junction temperature estimation from case temperature measurement in thermal management. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically and thermally connected to pins 2 and 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; accepts 10 V logic-level drive; 29 nC Qgs defines Miller plateau timing. |
| Pins 2 & 3 (D) | Drain | Main high-side power terminal; tied to exposed copper pad for low-inductance, high-current path and heat sinking. |
| Pin 4 (S) | Source | Power return and reference node; connects to ground plane; used for current sensing and gate drive referencing. |
Key Features
| Feature | Design Value |
|---|---|
| Advanced silicon process | Reduces RDS(on) by ~25% vs. prior generation, lowering conduction losses in high-current DC-DC stages. |
| 175 °C rated junction | Extends lifetime and reliability in thermally constrained designs without derating at 125 °C ambient. |
| Fast switching (tr/tf = 250 ns) | Minimizes transition losses in 50–200 kHz SMPS, enabling higher frequency operation without excessive drive loss. |
| Low Qgd/Qgs ratio (36/29 ≈ 1.24) | Improves controllability during Miller region, reducing risk of spurious turn-on in high-dV/dt environments. |
| Body diode with soft recovery | trr = 120–180 ns and Qrr = 0.5–0.8 μC enable use in synchronous rectification and freewheeling without snubbers. |
Applications
| Brushless DC Motor Drive | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-current half-bridge leg in 24–48 V BLDC inverters for HVAC blowers and industrial pumps. IC Role / Device Role / Timing Role: Power switch in high-side/low-side configuration; handles 50 A peak phase current with 100 kHz PWM. Use Value: Low RDS(on) reduces I²R heating in compact motor control modules; D2PAK thermal pad ensures stable TJ < 150 °C at full load. |
Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward converter for factory automation PLCs. IC Role / Device Role / Timing Role: Main power switch operating at 100–150 kHz; withstands 60 V bus with margin for line transients. Use Value: 100 mJ EAS rating absorbs leakage inductance spikes without clamping; fast trr minimizes cross-conduction loss in synchronous rectified secondary. |
| Automotive Body Control Module | LED Driver Power Stage |
|
Use Scenario: Load switch for high-power solenoids and relays in 12 V/24 V vehicle body electronics. IC Role / Device Role / Timing Role: High-side or low-side switch controlling up to 40 A inductive loads with integrated flyback protection. Use Value: 175 °C rating supports under-hood mounting; body diode handles inductive kickback without external freewheeling diode. |
Use Scenario: Buck converter switch for constant-current LED arrays in commercial lighting fixtures (50–100 W). IC Role / Device Role / Timing Role: High-efficiency main switch delivering 3–5 A average current at 200 kHz switching frequency. Use Value: Low Qg and fast switching reduce driver losses; D2PAK footprint allows direct heatsink attachment for passive thermal management. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V, 55 A, RDS(on) = 0.014 Ω @ 10 V, but Qg = 95 nC and TJ(max) = 175 °C; TO-220 package. | Higher current rating but through-hole mounting; lower gate charge eases drive but lacks D2PAK thermal interface. | Prefer when board space allows through-hole layout and lower gate drive loss is prioritized over thermal density. |
| IXTP50N065T | 65 V, 50 A, RDS(on) = 0.016 Ω @ 10 V, Qg = 105 nC, TJ(max) = 175 °C; TO-220AB package. | Slightly higher VDS rating and comparable RDS(on), but no surface-mount thermal pad; lower EAS (75 mJ). | Select when 65 V blocking margin is required and thermal interface via PCB copper is less critical than mechanical robustness. |
Compared with STP55NF06L and IXTP50N065T, the IRFZ48STRLPBF offers superior thermal performance via its D2PAK drain pad and balanced trade-off between RDS(on), Qg, and avalanche ruggedness-making it optimal for compact, high-power-density surface-mount power stages.
Availability
IRFZ48STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and high-efficiency DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for IRFZ48STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability and power efficiency.
The IRFZ48STRLPBF belongs to Vishay's third-generation power MOSFET family engineered for high-current, high-frequency switching in industrial and automotive power conversion systems.
FAQ
What is the maximum continuous drain current rating for IRFZ48STRLPBF at 100 °C case temperature?
The IRFZ48STRLPBF maintains a continuous drain current rating of 50 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects its robust thermal design and 0.8 °C/W RthJC, enabling sustained high-current operation without derating in well-cooled layouts.
Does IRFZ48STRLPBF support logic-level gate drive?
No, IRFZ48STRLPBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 V to 4.0 V, but it is characterized for full enhancement at VGS = 10 V, where RDS(on) = 0.018 Ω is guaranteed. Driving it reliably below 4.5 V risks incomplete turn-on and excessive conduction loss.
What is the avalanche energy rating of IRFZ48STRLPBF and how is it tested?
The IRFZ48STRLPBF has a single-pulse avalanche energy rating of 100 mJ, tested under conditions of VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω, and IAS = 72 A per Figure 12 in the datasheet. This rating validates its ruggedness against inductive switching faults.
Can IRFZ48STRLPBF be used in synchronous rectification applications?
Yes, IRFZ48STRLPBF is suitable for synchronous rectification due to its low RDS(on) and characterized body diode with trr = 120–180 ns and Qrr = 0.5–0.8 μC. Its fast, soft-recovery diode reduces switching loss and EMI when used as a controlled freewheeling path.
What is the recommended PCB pad layout for IRFZ48STRLPBF in D2PAK package?
Vishay recommends a minimum 0.420" × 0.355" (10.67 mm × 9.02 mm) copper pad for the drain tab of IRFZ48STRLPBF, with thermal vias to inner/ground planes. The AN826 document specifies 0.635" overall length and 0.145" pin pitch pads to ensure solder joint integrity and thermal performance in high-current applications.
IRFZ48STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 18mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRFZ48STRLPBF FAQ
1.How can I place an order for IRFZ48STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFZ48STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFZ48STRLPBF reliable?
The price and inventory of IRFZ48STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFZ48STRLPBF is usually 5 days.
3.What payment methods are accepted for IRFZ48STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFZ48STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFZ48STRLPBF?
IRFZ48STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFZ48STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFZ48STRLPBF?
For technical support, including IRFZ48STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFZ48STRLPBF requirements.
6.How does Aetrix verify that IRFZ48STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFZ48STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFZ48STRLPBF meets industry standards.
7.What is the process for return or replacement of IRFZ48STRLPBF?
All IRFZ48STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFZ48STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFZ48STRLPBF part is unused and in its original packaging.
Return procedure for IRFZ48STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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