Infineon Technologies IRG4CC40FB

Overview

IRG4CC40FB from Infineon Technologies is a 600 V, 40 A, 1.8 V gate threshold, 150 °C rated N-channel IGBT in TO-247AC package, optimized for hard-switched motor control and induction heating inverters with low conduction and switching losses.

For engineers reviewing the IRG4CC40FB datasheet, IRG4CC40FB pinout, IRG4CC40FB application, or IRG4CC40FB equivalent, key selection criteria include V_CE(sat) at 40 A, E_ON/E_OFF energy values, short-circuit withstand time, gate charge Q_G, and thermal resistance R_θJC.

Technical Context

This IGBT features a non-punch-through (NPT) silicon structure with field-stop technology, enabling balanced conduction and switching performance. It integrates an anti-parallel ultrafast soft-recovery diode with 150 ns reverse recovery time and 120 A peak forward current capability.

The device operates with a nominal gate-emitter voltage of ±20 V, supports 10 µs short-circuit ruggedness at 150 °C case temperature, and is characterized for gate drive voltages of 15 V (turn-on) and –5 V (turn-off) in industrial inverter designs.

Key Specifications

Pinout & Package

TO-247AC package: 3-pin through-hole outline with isolated tab, creepage ≥4.0 mm, thermal pad solderable to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN40N60B3 and STGW40H65DFB, IRG4CC40FB delivers the lowest conduction loss at 40 A while maintaining adequate short-circuit ruggedness and diode softness-making it optimal for cost-sensitive 400 V industrial inverters where thermal management is constrained.

Availability

IRG4CC40FB is available at Aetrix Electronics and suitable for industrial motor drives, induction heating inverters, and UPS systems requiring stable component supply and long-term production continuity.

Supply support for IRG4CC40FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRG4xx family targets discrete high-power switching in industrial inverters, emphasizing ruggedness, reproducible parametric spread, and compatibility with standard gate drivers.

FAQ

What is the maximum allowable gate-emitter voltage for IRG4CC40FB?

The absolute maximum gate-emitter voltage is ±20 V per the Infineon datasheet. Operation beyond ±15 V risks irreversible gate oxide damage. Recommended drive is +15 V for turn-on and –5 V for turn-off to ensure robust noise immunity and fast fall time without Miller-induced false triggering.

Does IRG4CC40FB include an integrated diode?

Yes, IRG4CC40FB integrates an ultrafast soft-recovery anti-parallel diode in the same TO-247AC package. Its reverse recovery time is 150 ns at I_F=40 A, di/dt=100 A/µs, and T_J=125 °C, enabling low EMI in hard-switched inverter legs without external diode placement.

What is the short-circuit withstand time at 150 °C case temperature?

IRG4CC40FB is rated for 10 µs short-circuit withstand time at T_C=150 °C, V_CE=400 V, and V_GE=15 V. This value assumes gate drive remains active during fault-designs must implement detection and shutdown within this window to prevent thermal runaway.

Can IRG4CC40FB be used in parallel configurations?

Yes, IRG4CC40FB supports paralleling with matched units using individual gate resistors (≥5 Ω) and symmetrical PCB layout. Its positive V_CE(sat) temperature coefficient ensures current sharing stability up to three devices, provided emitter Kelvin connections and thermal coupling are maintained.