Infineon Technologies IRGC100B120KB

Overview

IRGC100B120KB from International Rectifier is a 1200V, 100A nominal N-channel IGBT die in wafer form, fabricated using GEN5 Non-Punch-Through (NPT) technology. It delivers 2.3V typical V_CE(on) at 100A/25°C, supports 10µs short-circuit capability, and is optimized for high-efficiency motor control inverters requiring rugged transient performance and parallel operation.

For engineers reviewing the IRGC100B120KB datasheet, IRGC100B120KB pinout, IRGC100B120KB application, or IRGC100B120KB equivalent, key selection factors include its 1200V V_CE(S), square RBSOA, positive V_CE(on) temperature coefficient, 150mm wafer format, and die-level handling requirements for custom module assembly.

Technical Context

This IGBT die employs GEN5 NPT architecture to achieve low conduction loss and robust switching behavior under high-voltage motor drive conditions. Its square Reverse Bias Safe Operating Area (RBSOA) and 10µs short-circuit withstand time enable reliable operation in fault-prone industrial drives without external desaturation protection circuitry.

The device exhibits a positive V_CE(on) temperature coefficient-ensuring inherent current sharing when paralleled-and is fully tested at wafer level per IR's qualified process. Mechanical specifications include 0.488" × 0.488" die size, 185µm ±15µm thickness, and Al–Si front metallization with Ti–Ni/V–Ag backside stack for high-current die attach.

Key Specifications

Pinout & Package

IRGC100B120KB is supplied as an unsingulated die on a 150mm sawn wafer mounted on film frame. It has three terminals: Emitter (front-side aluminum metallization), Collector (backside Ti–Ni/V–Ag stack), and Gate (front-side aluminum pad). No discrete package; terminal assignment follows standard IGBT die layout with emitter and gate on front, collector on back.

Key Features

Applications

Availability

IRGC100B120KB is available at Aetrix Electronics and suitable for industrial motor drives, pump & compressor inverters, and custom power module development requiring stable component supply and wafer-level traceability.

Supply support for IRGC100B120KB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-performance IGBTs, MOSFETs, and driver ICs for industrial and automotive systems.

IRGC100B120KB belongs to the GEN5 IGBT die family, engineered specifically for high-power motor control applications demanding low conduction loss, rugged short-circuit behavior, and scalable parallel operation in custom module architectures.

FAQ

Is IRGC100B120KB supplied in a packaged format?

No. IRGC100B120KB is a bare die product supplied on a 150mm sawn wafer mounted on film frame. It is not available in TO-247, module, or any other pre-packaged configuration. Customers must integrate it into custom power modules or hybrid substrates using die-attach processes compliant with IR's recommended conditions (≤300°C peak temperature).

What is the significance of "100% wafer-level testing" for this die?

IR performs full electrical characterization-including V_CE(S), V_CE(on), V_GE(th), and leakage parameters-at wafer level before dicing. This ensures every die meets specification prior to singulation, supporting known-good-die (KGD) qualification and reducing post-assembly test fallout in customer module manufacturing.

Can IRGC100B120KB be paralleled with other IGBT dies?

Yes. Its positive V_CE(on) temperature coefficient and square RBSOA are explicitly designed to enable stable current sharing in parallel configurations. Successful paralleling requires matched gate drive impedance, symmetrical layout, and uniform thermal mounting-no external current-balancing resistors are needed under balanced conditions.

Does this die require special handling or storage?

Yes. IRGC100B120KB must be handled only in Class 10,000 cleanrooms using ESD-safe vacuum wands-not tweezers-and stored in nitrogen-purged, desiccated containers. Sawn wafers on film have limited shelf life and are intended for immediate use in die-attach processes to prevent contamination or metallization degradation.