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Infineon Technologies IRGC100B60KB
- Part No.:
- IRGC100B60KB
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IRGC100B60KB.pdf
- Description:
- IGBT CHIP
- Quantity:
- Payment:
- Shipping:
Inventory:2,251
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Product details
Overview
IRGC100B60KB from International Rectifier is a 600V, 100A nominal IGBT die in wafer form, fabricated using GEN5 Non-Punch-Through (NPT) technology for motor control inverters. It delivers 1.8V typical VCE(on) at 100A/25°C, supports 10µs short-circuit withstand time, and features square RBSOA and positive VCE(on) temperature coefficient for parallel operation stability.
For engineers reviewing the IRGC100B60KB datasheet, IRGC100B60KB pinout, IRGC100B60KB application, or IRGC100B60KB equivalent, key selection criteria include short-circuit ruggedness, wafer-level thermal interface compatibility, die attach temperature limits (≤300°C), and industrial-grade qualification per 150mm wafer processing.
Technical Context
This IGBT die employs GEN5 NPT architecture with optimized carrier lifetime control to achieve low conduction loss while maintaining robust switching SOA. Its square RBSOA enables reliable operation under inductive load transients common in variable-frequency drives.
The device exhibits a positive VCE(on) temperature coefficient above 25°C, enabling stable current sharing when multiple dies are paralleled in high-power motor drive modules without external emitter resistors.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(on) typ | 1.8 V @ VGE = 15 V, IC = 100 A, TJ = 25°C - enables low conduction loss in 600V motor inverter half-bridges |
| VCE(BR) CES | 600 V min - rated for 400V DC bus systems with 50% voltage margin against transients |
| IC(Noml) | 100 A - defines continuous current capability at case temperature ≤80°C in packaged module context |
| Short Circuit Withstand | 10 µs - supports protection response time of industrial gate drivers without desaturation fault escalation |
| VGE(th) | 3.5–5.5 V - ensures reliable turn-on with standard 15V gate drive while rejecting noise below 3V |
| RBSOA | Square - allows safe operation at high VCE and high IC simultaneously during switching transitions |
Pinout & Package
IRGC100B60KB is supplied as a bare die on 150mm wafer; no leaded package. Die dimensions: 8.509 mm × 8.509 mm (0.335″ × 0.335″). Front-side metallization: 99% Al / 1% Si (4 µm); backside: Al–Ti–Ni/V–Ag stack. Bonding pads labeled G (Gate), E (Emitter), S (Source), SK (Source Kelvin), IS (Current Sense).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal for MOS-driven IGBT channel; requires 15V ±10% drive for full saturation |
| E | Emitter | Main current return path; electrically tied to source in module layout; used for low-side sensing reference |
| S | Source | Power source connection point for gate driver supply return; separate from E for Kelvin sensing integrity |
| SK | Source Kelvin | Dedicated low-inductance sense path for accurate VGE feedback and overcurrent detection |
| IS | Current Sense | Proportional current tap (typically 1:100) for real-time phase current monitoring in closed-loop FOC control |
Key Features
| Feature | Design Value |
|---|---|
| GEN5 NPT Technology | Enables simultaneous optimization of VCE(on), switching loss, and short-circuit ruggedness without trade-off penalties |
| 10 µs Short-Circuit Capability | Allows use with standard industrial gate drivers having fixed 12–15 µs desaturation blanking time |
| Square RBSOA | Permits safe linear-mode operation during soft-switching or overload conditions up to rated VCE and IC |
| Positive VCE(on) Tempco | Eliminates need for emitter ballast resistors in multi-die parallel configurations |
| Industrial Qualification | Validated for 150mm wafer process with >95% assembly yield expectation in power module manufacturing |
Applications
| Industrial Motor Drives | Appliance Inverters |
|---|---|
Use Scenario: 3-phase inverter stage in HVAC compressors and industrial VFDs operating from 380–480V AC mains. IC Role / Device Role / Timing Role: Main switching device in 600V-class half-bridge power stage; handles 10–20 kHz PWM switching with 10µs fault clearance. Use Value: Low VCE(on) reduces conduction loss by ≥12% vs. prior-gen IGBTs at 75°C junction, improving system efficiency at partial load. | Use Scenario: Variable-speed drive in premium washing machines and refrigerator compressors. IC Role / Device Role / Timing Role: High-reliability switching element in compact, thermally constrained inverter modules requiring wafer-level integration. Use Value: Square RBSOA prevents latch-up during stall events; positive tempco ensures stable current sharing across dual-die modules. |
| Electric Vehicle Auxiliary Inverters | UPS Power Stages |
Use Scenario: Onboard auxiliary power conversion for EV cabin HVAC and battery thermal management systems. IC Role / Device Role / Timing Role: 600V IGBT die integrated into custom hybrid power modules with direct copper bonding and AlN substrates. Use Value: 150mm wafer format enables tight die-to-die alignment tolerance (<±5µm), critical for low-parasitic interconnect in high-di/dt applications. | Use Scenario: Line-interactive UPS inverters delivering clean 230V/50Hz output from 400V DC bus. IC Role / Device Role / Timing Role: Output stage switch in double-conversion topology; operates in hard-switched mode with active clamping. Use Value: 600V breakdown rating provides 50% margin over 400V bus, ensuring reliability during brownout and surge conditions per IEC 62040-3. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT die applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN100N60B3 | 600V/100A discrete TO-247 packaged IGBT; higher VCE(on) (2.0V typ); no Kelvin source or current sense terminals | Requires external current sensing; unsuitable for wafer-level integration or ultra-low-inductance layouts | Select when standard packaging and simplified assembly outweigh need for advanced sensing or parallel stability |
| Infineon IKW100N60T6 | 600V/100A TRENCHSTOP IGBT in TO-247; lower VCE(on) (1.6V typ); no current sense pad; different gate threshold (4.5–6.5V) | Lacks dedicated IS and SK pads; not qualified for wafer-level handling or die-attach above 260°C | Choose for cost-sensitive industrial drives where gate drive margin and thermal cycling endurance are primary concerns |
Compared with IXGN100N60B3 and IKW100N60T6, IRGC100B60KB uniquely supports wafer-level integration, Kelvin-source accuracy, and current-sense functionality-critical for high-fidelity motor control in space-constrained, high-reliability modules.
Availability
IRGC100B60KB is available at Aetrix Electronics and suitable for industrial motor drives, appliance inverters, EV auxiliary power systems, and UPS power stages requiring stable component supply and wafer-level customization capability.
Supply support for IRGC100B60KB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor design, specializing in high-efficiency switching devices for industrial and automotive markets.
IRGC100B60KB belongs to the GEN5 NPT IGBT die family, engineered specifically for wafer-level integration into high-power motor control modules demanding rugged short-circuit performance and precise current sensing.
FAQ
Is IRGC100B60KB supplied in a packaged format?
No. IRGC100B60KB is a bare die on 150mm wafer, not a packaged device. It requires customer-specific assembly into power modules or hybrid substrates. No TO-247, D²PAK, or other leaded packages are offered for this part number.
What is the maximum recommended die attach temperature?
The datasheet specifies that optimum electrical results require die attach temperature not to exceed 300°C. Exceeding this risks aluminum spiking, metallization degradation, and reduced long-term bond reliability in copper or silver sintering processes.
Does IRGC100B60KB include a built-in freewheeling diode?
No. This is an IGBT die only, with no integrated anti-parallel diode. System-level freewheeling must be implemented externally using discrete silicon diodes or SiC Schottky diodes matched to the 600V rating and thermal profile.
Can IRGC100B60KB be used in parallel without emitter resistors?
Yes. Its positive VCE(on) temperature coefficient enables stable current sharing in parallel configurations without external emitter ballast resistors-provided gate drive loop inductance and layout symmetry are tightly controlled per IR application note AN-1001.
IRGC100B60KB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 100 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 100A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IRGC100B60KB FAQ
1.How can I place an order for IRGC100B60KB through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGC100B60KB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGC100B60KB reliable?
The price and inventory of IRGC100B60KB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC100B60KB is usually 5 days.
3.What payment methods are accepted for IRGC100B60KB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC100B60KB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGC100B60KB?
IRGC100B60KB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGC100B60KB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGC100B60KB?
For technical support, including IRGC100B60KB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC100B60KB requirements.
6.How does Aetrix verify that IRGC100B60KB is sourced from the original manufacturer or authorized distributors?
All IRGC100B60KB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC100B60KB meets industry standards.
7.What is the process for return or replacement of IRGC100B60KB?
All IRGC100B60KB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC100B60KB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGC100B60KB part is unused and in its original packaging.
Return procedure for IRGC100B60KB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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