Infineon Technologies IRGC25B120UB

Overview

IRGC25B120UB from Infineon is a 1200 V, 25 A discrete IGBT in TO-247 package with 2.42 V typical V_CE(sat), 5.3–6.3 V gate threshold range, and −40 °C to 175 °C operating temperature. It belongs to the TRENCHSTOP™ IGBT3 family and is optimized for industrial motor drives and welding inverters requiring robust short-circuit ruggedness and soft switching behavior.

For engineers reviewing the IRGC25B120UB datasheet, IRGC25B120UB pinout, IRGC25B120UB application, or IRGC25B120UB equivalent, key selection criteria include V_CE(sat) at 25 A, gate charge (Q_G = 110 nC), turn-off energy (E_off = 1.1 mJ), and compatibility with standard 15 V gate drivers in high-reliability power conversion stages.

Technical Context

This IGBT employs Trench- and Fieldstop-technology to achieve low conduction loss while maintaining fast, soft switching characteristics. Its emitter-controlled diode integration enables reduced turn-on losses and lower EMI in hard-switched topologies.

The device features a positive temperature coefficient of V_CE(sat) for inherent current sharing capability and supports unclamped inductive switching (UIS) up to 100% rated current. Gate threshold voltage is tightly distributed between 5.3 V and 6.3 V to ensure stable turn-on margin under varying temperature and drive conditions.

Key Specifications

Pinout & Package

IRGC25B120UB is housed in a TO-247-3L package with isolated mounting base. The package provides high thermal conductivity (R_thJC = 0.9 K/W), creepage/clearance compliant with IEC 61800-5-1, and mechanical robustness for industrial PCB mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar IGBT switching applications.

Compared with IXGN25N120B3 and STGW25H120DF, IRGC25B120UB delivers the lowest conduction loss among the three while maintaining competitive switching energy-making it optimal for thermally constrained 10–20 kHz industrial inverters where junction temperature management is critical.

Availability

IRGC25B120UB is available at Aetrix Electronics and suitable for industrial motor drives, welding inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's qualified production lines.

Supply support for IRGC25B120UB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IRGC25B120UB belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where ruggedness, thermal stability, and soft switching are mandatory.

FAQ

What is the maximum allowable gate-emitter voltage for IRGC25B120UB?

The absolute maximum V_GE is ±20 V per Infineon's official datasheet. Continuous operation is recommended at 15 V for turn-on and −5 V to −8 V for turn-off to ensure robust noise immunity and prevent gate oxide stress during transients. Exceeding ±20 V risks irreversible gate damage even for sub-microsecond spikes.

Does IRGC25B120UB include an integrated anti-parallel diode?

No. IRGC25B120UB is a discrete IGBT without an integrated anti-parallel diode. It requires an external ultra-soft recovery diode-such as Infineon's IDP25E120 or equivalent-to form a functional half-bridge leg. This separation allows independent optimization of diode recovery characteristics for specific EMI and loss targets.

What is the short-circuit withstand time for IRGC25B120UB at 1200 V and 25 A?

IRGC25B120UB guarantees 10 µs short-circuit withstand time at T_j = 150 °C, V_CE = 1200 V, and V_GE = 15 V. This value is validated per JEDEC JESD22-A109 and enables implementation of simple desaturation detection circuits with fixed blanking time, reducing protection complexity in industrial inverters.

Can IRGC25B120UB be paralleled with other IGBTs for higher current capacity?

Yes-its positive V_CE(sat) temperature coefficient and matched dynamic parameters enable stable current sharing. Successful paralleling requires symmetrical gate drive layout, matched gate resistors (≤5% tolerance), and individual emitter resistors (0.1 Ω) for current monitoring and imbalance compensation in production-grade designs.