Infineon Technologies IRGC4066B
- Part No.:
- IRGC4066B
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IRGC4066B.pdf
- Description:
- IGBT CHIP
- Quantity:
- Payment:

- Shipping:

Inventory:7,207
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRGC4066B from Infineon is a 650 V, 75 A TRENCHSTOP™ IGBT bare die optimized for high-efficiency industrial motor drives and UPS inverters, featuring 1.82 V typical VCE(sat), 5.1–6.4 V gate threshold range, and −40 °C to +175 °C operating temperature.
For engineers reviewing the IRGC4066B datasheet, IRGC4066B pinout, IRGC4066B application, or IRGC4066B equivalent, this part supports high-current switching in 650 V hard-switched and resonant topologies where low conduction loss and robust short-circuit ruggedness are critical.
Technical Context
This IGBT uses Infineon's Trench-Stop technology with field-stop doping to achieve low VCE(sat) and fast, soft switching behavior. It is designed for discrete mounting on ceramic substrates or press-pack assemblies in medium-power converters.
The device exhibits no integrated anti-parallel diode and requires external freewheeling diode selection. Its gate threshold voltage (5.1–6.4 V) ensures noise-immune turn-on while supporting standard 15 V gate drive with ±20 V absolute maximum rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 650 V - Supports DC bus voltages up to 600 V in three-phase inverters with 15% overvoltage margin. |
| IC(max) | 75 A - Rated continuous collector current at Tc = 100 °C, enabling 15–22 kW motor drive stages. |
| VCE(sat) (typ) | 1.82 V - Reduces conduction loss by ~18% vs. prior IGBT3 generation, lowering heatsink requirements. |
| VGE(th) range | 5.1–6.4 V - Ensures reliable turn-on under noisy gate-drive conditions and avoids unintended activation. |
| Tj operating range | −40 °C to +175 °C - Enables operation in harsh environments including welding equipment and industrial UPS systems. |
| Technology | TRENCHSTOP™ IGBT - Combines trench gate and field-stop layer for balanced switching speed and saturation voltage. |
Pinout & Package
IRGC4066B is a bare die (chip-level) device without leads or molded package. It features a standard 3-terminal planar structure: Emitter (E), Collector (C), and Gate (G), intended for direct die attach using solder or sintering onto DBC or AMB substrates.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connected to DC+ bus; must withstand full blocking voltage and carry peak load current. |
| Emitter (E) | Power return and reference node | Serves as common reference for gate drive and current sensing; low-inductance layout critical. |
| Gate (G) | Control input | Requires low-impedance drive path; sensitive to dv/dt-induced false turn-on without proper Miller clamp. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 1.82 V typ at IC = 75 A, Tj = 25 °C - Directly reduces conduction losses in high-duty-cycle applications. |
| High short-circuit withstand time | 10 µs at 15 V VGE, Tj = 150 °C - Enables robust protection in fault-prone industrial motor control. |
| Soft switching behavior | Controlled tail current decay - Minimizes voltage overshoot and EMI during turn-off in hard-switched inverters. |
| Optimized for 15 V gate drive | VGE(max) = ±20 V - Compatible with industry-standard isolated gate drivers without level-shifting. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: Three-phase 15–22 kW variable-frequency drives for pumps, fans, and compressors. IC Role / Device Role / Timing Role: Main switching device in inverter leg; handles 650 V DC link and 75 A phase current. Use Value: Low VCE(sat) and high Tj(max) allow compact thermal design and >98% inverter efficiency at rated load. |
Use Scenario: Online double-conversion UPS systems with 600 V DC bus and bidirectional energy flow. IC Role / Device Role / Timing Role: Inverter-stage switch enabling sinusoidal output waveform generation and battery charging control. Use Value: Soft recovery and 10 µs short-circuit rating support fast fault response and grid-synchronization stability. |
| Welding Inverters | Renewable Energy Converters |
|
Use Scenario: IGBT-based inverter welders operating at 20–50 kHz with high peak current demands. IC Role / Device Role / Timing Role: Primary power switch in primary-side DC-AC stage; subjected to repetitive short-circuit stress. Use Value: High ruggedness and 175 °C junction rating enable sustained high-duty-cycle operation without derating. |
Use Scenario: Solar string inverters and energy storage system (ESS) bi-directional converters. IC Role / Device Role / Timing Role: DC-link switching element in two-level or NPC topologies handling 650 V PV array or battery voltage. Use Value: Field-stop architecture provides stable switching performance across wide temperature and irradiance variations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IGC39T65T8M | Same VCE(max), IC, VCE(sat), and VGE(th); identical TRENCHSTOP™ IGBT3 process and bare-die form factor. | No functional difference; both qualified for industrial motor drives and UPS at same power class. | Select based on wafer lot availability and traceability requirements-no electrical or thermal trade-offs. |
| SIGC39T65E | Same voltage/current ratings but higher VCE(sat) (1.87 V) and wider VGE(th) range (5.0–6.5 V); legacy IGBT3 generation. | Marginally lower efficiency and reduced noise immunity in gate drive due to lower VGE(th) min. | Prefer IRGC4066B where thermal headroom or EMI sensitivity is critical; SIGC39T65E remains viable for cost-sensitive legacy designs. |
Compared with SIGC39T65E and IGC39T65T8M, IRGC4066B delivers identical performance to IGC39T65T8M but supersedes SIGC39T65E with tighter VGE(th) control and lower conduction loss-critical for thermally constrained industrial inverters.
Availability
IRGC4066B is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding inverters requiring stable component supply, long-term manufacturability, and traceable sourcing.
Supply support for IRGC4066B includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IRGC4066B belongs to Infineon's TRENCHSTOP™ IGBT3 bare-die product line, engineered specifically for high-reliability, high-power-density discrete power conversion in industrial motor control and UPS systems.
FAQ
Is IRGC4066B a packaged device or bare die?
IRGC4066B is a bare die (unencapsulated silicon chip) with no leads, mold compound, or standard package. It requires direct die-attach mounting onto insulated metal substrates or ceramic DBC/AMB modules using solder or sintering processes.
Does IRGC4066B include an integrated anti-parallel diode?
No. IRGC4066B is a single N-channel IGBT die without any integrated freewheeling diode. An external ultra-soft recovery diode-such as Infineon's Ultrathin Emitter Controlled-Diode-is required for bidirectional current handling in inverter legs.
What gate drive voltage is recommended for IRGC4066B?
A nominal 15 V gate-emitter voltage is recommended for reliable turn-on with sufficient noise margin. The absolute maximum VGE is ±20 V; gate drive circuits must limit negative voltage during turn-off to avoid latch-up or gate oxide stress.
How does IRGC4066B differ from earlier IGBT generations like IGBT2 or IGBT1?
IRGC4066B uses TRENCHSTOP™ IGBT3 technology with deeper trench gates and optimized field-stop layers, delivering 10–15% lower VCE(sat), improved short-circuit ruggedness (10 µs), and tighter VGE(th) distribution versus IGBT2, enabling higher efficiency and reliability in demanding industrial applications.
IRGC4066B Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- Trench
- Voltage - Collector Emitter Breakdown (Max):
- 600 V
- Current - Collector (Ic) (Max):
- 75 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 2.1V @ 15V, 75A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- 150 nC
- Td (on/off) @ 25°C:
- 50ns/200ns
- Test Condition:
- 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IRGC4066B FAQ
1.How can I place an order for IRGC4066B through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGC4066B on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGC4066B reliable?
The price and inventory of IRGC4066B are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC4066B is usually 5 days.
3.What payment methods are accepted for IRGC4066B?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC4066B transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGC4066B?
IRGC4066B orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGC4066B order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGC4066B?
For technical support, including IRGC4066B datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC4066B requirements.
6.How does Aetrix verify that IRGC4066B is sourced from the original manufacturer or authorized distributors?
All IRGC4066B products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC4066B meets industry standards.
7.What is the process for return or replacement of IRGC4066B?
All IRGC4066B units undergo pre-shipment inspection (PSI). If there is an issue with IRGC4066B, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGC4066B part is unused and in its original packaging.
Return procedure for IRGC4066B:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRGC4066B Tags
;;2.jpg)
-
STGD3NB60SDT4
STMicroelectronics

-
HGTD1N120BNS9A
onsemi

-
STGF7NB60SL
STMicroelectronics

-
FGD5T120SH
onsemi

-
STGB3NC120HDT4
STMicroelectronics

-
IKP20N60TXKSA1
Infineon Technologies

-
STGW30H60DFB
STMicroelectronics

-
STGB30M65DF2
STMicroelectronics

-
IKB20N60TATMA1
Infineon Technologies

-
STGB30V60DF
STMicroelectronics
-
IKW30N60DTPXKSA1
Infineon Technologies

-
ISL9V3040P3
onsemi
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
