Infineon Technologies IRGC50B120UB
- Part No.:
- IRGC50B120UB
- Manufacturer:
- Infineon Technologies
- Category:
- Single IGBTs
- Package:
- Die
- Datasheet:
-
IRGC50B120UB.pdf
- Description:
- IGBT CHIP
- Quantity:
- Payment:

- Shipping:

Inventory:6,792
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Product details
Overview
IRGC50B120UB from Infineon is a 1200 V, 50 A discrete IGBT in TO-247 package, optimized for high-efficiency industrial motor drives and UPS systems. It features VCE(sat) = 2.42 V at Tj = 150 °C, gate threshold voltage range of 5.3–6.3 V, and maximum operating junction temperature of 175 °C.
For engineers reviewing the IRGC50B120UB datasheet, IRGC50B120UB pinout, IRGC50B120UB application, or IRGC50B120UB equivalent, key selection criteria include its 1200 V blocking capability, low conduction loss under hard-switching conditions, soft reverse recovery behavior when paired with an anti-parallel diode, and suitability for 10–20 kHz PWM inverters in traction and industrial power conversion.
Technical Context
This IGBT belongs to Infineon's TRENCHSTOP™ IGBT3 family, integrating trench-gate and field-stop technology to balance switching speed and saturation voltage. Its design targets medium-power industrial inverters where thermal robustness and rugged short-circuit withstand (10 µs) are critical.
The device operates with a fixed gate-emitter threshold voltage window (5.3–6.3 V), enabling stable turn-on across temperature and supply variation. It is not rated for unclamped inductive switching (UIS) but supports repetitive avalanche operation within specified limits per datasheet.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCE(max) | 1200 V - Supports DC bus voltages up to 900 V in 3-phase inverter topologies with 20% safety margin. |
| IC(max) @ Tc = 25 °C | 50 A - Continuous collector current rating at case temperature 25 °C; derates to ~32 A at Tc = 100 °C. |
| VCE(sat) max | 2.42 V @ IC = 50 A, VGE = 15 V, Tj = 150 °C - Directly determines conduction loss in hard-switched applications. |
| VGE(th) min/max | 5.3 V / 6.3 V - Ensures reliable turn-on with standard 15 V gate drivers while avoiding spurious triggering. |
| Tj(max) | 175 °C - Enables high-power density designs with reduced heatsink requirements in forced-air-cooled systems. |
| Short-circuit withstand time | 10 µs @ VCE = 600 V, VGE = 15 V, Tj = 150 °C - Defines minimum fault-clearance window for protection circuitry. |
Pinout & Package
IRGC50B120UB is housed in a TO-247-3L plastic package with isolated mounting flange. The package provides 2.5 kV isolation between collector and case, and supports screw-mount mechanical integration into heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (C) | Main high-side power terminal | Connected to DC+ bus in half-bridge; carries full load current and must be routed with low-inductance layout. |
| Gate (G) | Control input | High-impedance MOS-controlled terminal requiring <100 nF gate drive capacitance and <±20 V absolute rating. |
| Emiter (E) | Power return and reference node | Serves as common reference for gate drive and current sensing; must be low-inductance path to minimize voltage spikes. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchStop™ IGBT3 architecture | Reduces VCE(sat) by ~0.15 V vs. prior generation while maintaining comparable switching losses at 1200 V. |
| Field-stop doping profile | Enables thinner drift region, improving trade-off between breakdown voltage and on-state resistance without compromising ruggedness. |
| Optimized for anti-parallel diode pairing | Designed to operate with Infineon's ultra-soft 1200 V diodes (e.g., IDW50C120, IDW60C120) to minimize reverse recovery oscillation and EMI. |
| Rugged short-circuit capability | Withstands 10 µs at 600 V bus with 15 V gate drive - enables use in motor drives without active desaturation detection in basic protection schemes. |
Applications
| Industrial Motor Drives | Uninterruptible Power Supplies (UPS) |
|---|---|
|
Use Scenario: 15–30 kW variable-frequency drives for pumps, fans, and compressors in HVAC and water treatment plants. IC Role / Device Role / Timing Role: Main switching device in 2-level inverter leg; switches at 8–16 kHz with sinusoidal PWM modulation. Use Value: Low VCE(sat) reduces conduction loss by ~12 W per device vs. older 1200 V IGBTs, lowering heatsink size and system cooling cost. |
Use Scenario: Online double-conversion UPS systems delivering clean 50/60 Hz output from rectified AC or battery DC input. IC Role / Device Role / Timing Role: Inverter-stage switch in three-phase bridge; operates in hard-switched mode with dead-time control. Use Value: 175 °C Tj(max) allows sustained 100% load operation at ambient up to 55 °C without derating in compact chassis. |
| Welding Equipment | Renewable Energy Inverters |
|
Use Scenario: IGBT-based inverter welding machines with adjustable arc characteristics and digital control loops. IC Role / Device Role / Timing Role: Primary power switch in DC-link chopper or inverter stage; handles pulsed 100–500 A peak currents. Use Value: 10 µs short-circuit withstand time aligns with typical microcontroller-based fault response latency, enabling deterministic overcurrent shutdown. |
Use Scenario: Central string inverters (50–100 kW) converting PV DC to grid-synchronized AC in commercial solar farms. IC Role / Device Role / Timing Role: High-side switch in NPC or T-type inverter topology; commutated at 10–12 kHz with reactive power support. Use Value: Gate threshold stability (5.3–6.3 V) ensures consistent timing margin across wide temperature range (-25 °C to +60 °C outdoor enclosure). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage IGBT switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXYS IXGN50N120A3 | Higher VCE(sat) (2.6 V), lower gate charge (QG = 145 nC vs. 170 nC), same 1200 V/50 A rating. | Better suited for higher-frequency (>20 kHz) resonant topologies due to lower QG, but less efficient in hard-switched 10–15 kHz drives. | Select if prioritizing switching loss reduction over conduction loss in ZVS/ZCS circuits. |
| STMicroelectronics STGW50H120DF3 | Integrated fast-recovery anti-parallel diode; VCE(sat) = 2.5 V; lower short-circuit withstand (6 µs). | Reduces BOM count in space-constrained designs but requires careful thermal coupling between IGBT and diode junctions. | Select when board area is constrained and diode co-location is mandatory; avoid in high-reliability fault-tolerant systems. |
Compared with IXGN50N120A3 and STGW50H120DF3, IRGC50B120UB delivers the lowest conduction loss among the three at 1200 V, maintains superior ruggedness for industrial fault environments, and offers gate drive compatibility with legacy 15 V driver ICs without requiring negative turn-off bias.
Availability
IRGC50B120UB is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and welding equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer stock.
Supply support for IRGC50B120UB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security solutions, with global R&D and manufacturing infrastructure.
IRGC50B120UB belongs to the TRENCHSTOP™ IGBT3 product line, engineered specifically for medium-power industrial inverters demanding high efficiency, thermal resilience, and proven ruggedness in harsh operating environments.
FAQ
What is the recommended gate resistor value for IRGC50B120UB in a 15 kHz motor drive?
A 10 Ω non-inductive gate resistor is recommended for balanced turn-on/turn-off times (~120 ns ton, ~280 ns toff) and EMI control. Lower values (<5 Ω) increase dI/dt and risk shoot-through; higher values (>22 Ω) extend switching losses disproportionately. Layout parasitics must be minimized to avoid gate oscillation.
Does IRGC50B120UB require a negative gate voltage for reliable turn-off?
No. IRGC50B120UB is fully compatible with 0 V to +15 V gate drive. Its VGE(th) minimum of 5.3 V ensures noise immunity without negative bias. However, applying –5 V during off-state improves dv/dt immunity in high-noise environments like welders or VFDs with long motor cables.
Can IRGC50B120UB be used without an external freewheeling diode?
No. IRGC50B120UB is a discrete IGBT only and lacks an integrated anti-parallel diode. An external ultra-soft recovery diode (e.g., Infineon IDW50C120) must be mounted in close proximity with shared thermal path to ensure safe commutation and prevent voltage overshoot during turn-off.
What is the maximum allowable case temperature for continuous operation?
The maximum continuous case temperature is 100 °C. At this temperature, the device delivers ~32 A IC (derated from 50 A at 25 °C). Exceeding 100 °C risks accelerated parameter drift and reduced short-circuit withstand capability; thermal interface material and heatsink fin design must maintain Tc ≤ 100 °C under worst-case load and ambient conditions.
IRGC50B120UB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Bulk
- Product Status:
- Obsolete
- IGBT Type:
- NPT
- Voltage - Collector Emitter Breakdown (Max):
- 1200 V
- Current - Collector (Ic) (Max):
- 50 A
- Current - Collector Pulsed (Icm):
- -
- Vce(on) (Max) @ Vge, Ic:
- 3.5V @ 15V, 50A
- Power - Max:
- -
- Switching Energy:
- -
- Input Type:
- Standard
- Gate Charge:
- -
- Td (on/off) @ 25°C:
- -
- Test Condition:
- -
- Reverse Recovery Time (trr):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
IRGC50B120UB FAQ
1.How can I place an order for IRGC50B120UB through Aetrix?
Please submit a Request for Quotation (RFQ) for IRGC50B120UB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRGC50B120UB reliable?
The price and inventory of IRGC50B120UB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRGC50B120UB is usually 5 days.
3.What payment methods are accepted for IRGC50B120UB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRGC50B120UB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRGC50B120UB?
IRGC50B120UB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRGC50B120UB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRGC50B120UB?
For technical support, including IRGC50B120UB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRGC50B120UB requirements.
6.How does Aetrix verify that IRGC50B120UB is sourced from the original manufacturer or authorized distributors?
All IRGC50B120UB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRGC50B120UB meets industry standards.
7.What is the process for return or replacement of IRGC50B120UB?
All IRGC50B120UB units undergo pre-shipment inspection (PSI). If there is an issue with IRGC50B120UB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRGC50B120UB part is unused and in its original packaging.
Return procedure for IRGC50B120UB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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