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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL2203STRL

Name: IRL2203STRL
Brand: Vishay Siliconix
SKU: IRL2203STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2203STRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2203STRL.pdf

Description:: MOSFET N-CH 30V 100A D2PAK

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Product details

Overview

IRL2203STRL from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D2Pak (TO-263) package, designed for high-current DC-DC conversion, motor control, and load switching. It delivers 100A continuous drain current at TC = 25°C, 30V V_DSS, and ultra-low 7mΩ R_DS(on) at V_GS = 10V - enabling efficient high-power switching in industrial power supplies and automotive body electronics.

For engineers reviewing the IRL2203STRL datasheet, IRL2203STRL pinout, IRL2203STRL application, or IRL2203STRL equivalent, key selection criteria include its 4.5V gate threshold compatibility with microcontroller GPIOs, 175°C maximum junction temperature, fully avalanche-rated ruggedness, and surface-mount D2Pak thermal performance supporting >130W power dissipation at case temperature.

Technical Context

This HEXFET device uses fifth-generation silicon process technology to achieve low on-resistance per die area while maintaining fast switching (t_r = 210ns, t_f = 54ns) and robust dv/dt immunity (1.2V/ns). Its body diode exhibits 94–140ns reverse recovery time and 280–410nC Q_rr, making it suitable for synchronous rectification and freewheeling in hard-switched topologies.

The IRL2203STRL integrates a monolithic p-n junction source-drain diode with 1.3V forward voltage at 60A and 25°C. Its gate charge profile (Q_g = 110nC, Q_gd = 57nC) supports efficient gate driving with standard 1.8Ω pull-down resistance, and its thermal design leverages low R_θJC = 1.2°C/W for heatsink-coupled operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage compatible with 24V automotive and industrial bus systems
R_DS(on) @ V_GS = 10V	7mΩ - Enables <1W conduction loss at 100A, critical for high-efficiency power stages
I_D Continuous @ T_C = 25°C	100A - Supports high-current loads without external paralleling in compact PCB layouts
Q_g	110nC - Determines gate driver current requirement (~55mA avg. for 500kHz switching)
T_J max	+175°C - Allows operation in under-hood automotive or sealed industrial enclosures
E_AS	390mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients
R_θJC	1.2°C/W - Enables direct heatsink mounting for >100W thermal handling with minimal junction-to-case rise

Pinout & Package

D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-current PCB routing and heatsink integration.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate (G)	Control electrode	Logic-level compatible (V_GS(th) = 1.0–2.5V); requires <110nC charge for full enhancement
2 - Drain (D)	Main current output terminal	Internally connected to exposed copper pad; must be soldered to large copper pour or heatsink
3 - Source (S)	Main current return path	Common reference for gate drive; connects to power ground plane with low-inductance layout

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at 4.5V V_GS, eliminating need for gate boosters in 3.3V/5V MCU systems
Fully avalanche rated	Withstands 390mJ single-pulse avalanche energy without failure - critical for inductive load switching
Dynamic dv/dt immunity	Rated for 1.2V/ns peak diode recovery dv/dt - suppresses false turn-on in noisy high-speed circuits
High-temperature operation	Guaranteed performance up to +175°C junction temperature - suitable for engine bay or sealed power modules
Low Q_gd/Q_g ratio	52% Miller charge fraction (57nC/110nC) improves switching controllability and reduces EMI risk

Applications

Automotive Body Control Module	Industrial DC Motor Driver
Use Scenario: Switching 12V/24V solenoids, fans, and lighting loads in BCM submodules. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 100A peak. Use Value: 7mΩ R_DS(on) minimizes heat generation in confined BCM housings; 175°C rating ensures reliability near engine compartments.	Use Scenario: H-bridge phase-leg switching in 24–48V brushed DC motor drives for factory automation. IC Role / Device Role / Timing Role: Low-side switching element with fast 54ns fall time enabling PWM frequencies >20kHz. Use Value: 110nC total gate charge enables efficient gate driving with integrated half-bridge drivers; body diode Q_rr supports freewheeling without external Schottky.
Server VRM High-Side Switch	Telecom DC-DC Converter
Use Scenario: High-current synchronous rectification in 48V-to-12V intermediate bus converters for datacenter servers. IC Role / Device Role / Timing Role: High-side MOSFET in multiphase buck converter operating at 300–500kHz. Use Value: 1.2°C/W R_θJC allows direct heatsink mounting to maintain <100°C junction temp at 80A continuous; low C_oss (1400pF) reduces switching loss.	Use Scenario: Primary-side switching in isolated 48V telecom rectifiers delivering >1kW output. IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology. Use Value: 390mJ E_AS withstands transformer leakage inductance spikes; 30V V_DSS provides margin over 24V nominal bus with transient clamping.

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: Switching 12V/24V solenoids, fans, and lighting loads in BCM submodules.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 100A peak.

Use Value: 7mΩ R_DS(on) minimizes heat generation in confined BCM housings; 175°C rating ensures reliability near engine compartments.

Use Scenario: H-bridge phase-leg switching in 24–48V brushed DC motor drives for factory automation.

IC Role / Device Role / Timing Role: Low-side switching element with fast 54ns fall time enabling PWM frequencies >20kHz.

Use Value: 110nC total gate charge enables efficient gate driving with integrated half-bridge drivers; body diode Q_rr supports freewheeling without external Schottky.

Server VRM High-Side Switch

Telecom DC-DC Converter

Use Scenario: High-current synchronous rectification in 48V-to-12V intermediate bus converters for datacenter servers.

IC Role / Device Role / Timing Role: High-side MOSFET in multiphase buck converter operating at 300–500kHz.

Use Value: 1.2°C/W R_θJC allows direct heatsink mounting to maintain <100°C junction temp at 80A continuous; low C_oss (1400pF) reduces switching loss.

Use Scenario: Primary-side switching in isolated 48V telecom rectifiers delivering >1kW output.

IC Role / Device Role / Timing Role: Main power switch in forward or active-clamp forward topology.

Use Value: 390mJ E_AS withstands transformer leakage inductance spikes; 30V V_DSS provides margin over 24V nominal bus with transient clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	Higher R_DS(on) (4mΩ @ 10V but 5.3mΩ @ 4.5V), higher Q_g (130nC), same D2Pak package	Less suitable for 3.3V logic-driven designs due to weaker 4.5V on-resistance	Prefer IRL2203STRL when gate drive voltage ≤4.5V or lower switching loss is required
STP100N3LLH6	Lower V_DSS (30V same), slightly higher R_DS(on) (8.5mΩ @ 4.5V), similar Q_g (105nC), same D2Pak	Marginally higher conduction loss at 50–100A; identical thermal footprint	Acceptable alternative if sourcing constraints exist, but IRL2203STRL offers superior 4.5V R_DS(on) and avalanche rating

Compared with IRF1404PBF and STP100N3LLH6, the IRL2203STRL delivers the lowest verified R_DS(on) at 4.5V gate drive (10mΩ), highest single-pulse avalanche energy (390mJ), and tightest V_GS(th) range (1.0–2.5V), making it optimal for space-constrained, thermally demanding logic-level switching.

Availability

IRL2203STRL is available at Aetrix Electronics and suitable for automotive body control, industrial motor drives, server VRMs, and telecom DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for IRL2203STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRL2203STRL belongs to Infineon's legacy HEXFET® power MOSFET family, engineered for high-current, high-reliability switching in automotive, industrial, and computing power systems where logic-level drive and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRL2203STRL at 100°C case temperature?

The IRL2203STRL supports 71A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2Pak package and must be validated against actual board layout and heatsinking in the final design. The IRL2203STRL maintains safe operation up to 175°C junction temperature under these conditions.

Does IRL2203STRL have a built-in body diode, and what are its key parameters?

Yes, the IRL2203STRL integrates a monolithic p-n junction body diode with V_SD = 1.3V at 60A and 25°C, reverse recovery time (t_rr) of 94–140ns, and reverse recovery charge (Q_rr) of 280–410nC. These values are measured with I_F = 60A, di/dt = 100A/µs, and T_J = 25°C. The IRL2203STRL body diode is rated for continuous source current up to 100A and pulsed current up to 400A.

Can IRL2203STRL be driven directly by a 3.3V microcontroller GPIO?

The IRL2203STRL has a gate threshold voltage (V_GS(th)) of 1.0–2.5V, so it will turn on with 3.3V drive; however, full enhancement requires ≥4.5V for R_DS(on) ≤10mΩ. At 3.3V, R_DS(on) rises significantly (not characterized in datasheet), increasing conduction loss. For reliable low-loss operation, the IRL2203STRL should be driven with ≥4.5V - a level-shifter or gate driver is recommended when using 3.3V MCUs.

What is the thermal resistance from junction to case (RθJC) for IRL2203STRL, and how is it used in thermal design?

The IRL2203STRL has a maximum R_θJC of 1.2°C/W, measured from junction to the bottom of the exposed drain pad. This value enables direct calculation of junction temperature rise above case temperature: ΔT_J = P_diss × R_θJC. When mounted to a heatsink via the drain pad, this parameter dominates thermal performance - PCB copper alone cannot replicate its effectiveness. The IRL2203STRL requires proper soldering of the drain pad to maximize this thermal path.

Is IRL2203STRL suitable for avalanche operation, and what is its rated energy?

Yes, the IRL2203STRL is fully avalanche rated with a single-pulse avalanche energy (E_AS) of 390mJ under test conditions of V_DD = 15V, starting T_J = 25°C, L = 220µH, R_G = 25Ω, and I_AS = 60A. This rating applies to unclamped inductive switching events and confirms ruggedness beyond normal SOA limits. The IRL2203STRL also supports repetitive avalanche with E_AR = 13mJ per pulse, subject to thermal limits.

IRL2203STRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL2203STRL FAQ

1.How can I place an order for IRL2203STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2203STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2203STRL reliable?

The price and inventory of IRL2203STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203STRL is usually 5 days.

3.What payment methods are accepted for IRL2203STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2203STRL?

IRL2203STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2203STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2203STRL?

For technical support, including IRL2203STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203STRL requirements.

6.How does Aetrix verify that IRL2203STRL is sourced from the original manufacturer or authorized distributors?

All IRL2203STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203STRL meets industry standards.

7.What is the process for return or replacement of IRL2203STRL?

All IRL2203STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2203STRL part is unused and in its original packaging.

Return procedure for IRL2203STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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