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Vishay Siliconix IRL2203STRR
- Part No.:
- IRL2203STRR
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL2203STRR.pdf
- Description:
- MOSFET N-CH 30V 100A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,916
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Product details
Overview
IRL2203STRR from International Rectifier is a logic-level N-channel enhancement-mode power MOSFET in D2Pak (TO-263) package, rated for 30V VDSS, 0.007Ω RDS(on) at VGS = 10V, and 100A continuous drain current at TC = 25°C. It serves as a high-efficiency, surface-mount power switch in DC-DC converters, motor drives, and battery protection circuits.
For engineers reviewing the IRL2203STRR datasheet, IRL2203STRR pinout, IRL2203STRR application, or IRL2203STRR equivalent, key selection criteria include its 4.5V gate threshold compatibility with microcontroller GPIOs, 175°C maximum junction temperature, fully avalanche-rated ruggedness, and low 110nC total gate charge for fast switching in high-frequency synchronous rectification.
Technical Context
This HEXFET device uses fifth-generation silicon process technology to achieve ultra-low on-resistance per die area while maintaining robust dv/dt immunity (1.2 V/ns) and dynamic avalanche capability. Its body diode exhibits 94–140ns reverse recovery time and 280–410nC Qrr, enabling reliable operation in hard-switched topologies.
The IRL2203STRR integrates a monolithic p-n junction source-drain diode with 1.3V forward voltage at 60A and supports unclamped inductive switching up to 390mJ single-pulse avalanche energy. Thermal design is enabled by 1.2°C/W junction-to-case resistance and 40°C/W junction-to-ambient rating on FR-4 PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage before avalanche onset; defines safe operating range in 24V bus applications. |
| RDS(on) @ VGS = 10V | 0.007Ω - Enables ≤700mW conduction loss at 10A, critical for high-current, low-voltage power stages. |
| ID Continuous @ TC = 25°C | 100A - Sustained current capability when mounted on heatsink; requires thermal management above 71A at 100°C case temp. |
| Qg | 110nC - Total gate charge determines drive strength requirement; compatible with standard gate drivers delivering ≥2A peak. |
| TJ Max | +175°C - Allows operation in under-hood automotive or industrial environments without derating at elevated ambient. |
| EAS | 390mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive turn-off transients in motor control. |
| Ciss | 3500pF - Input capacitance impacts gate drive loop stability and switching speed; necessitates careful layout to minimize ringing. |
Pinout & Package
D2Pak (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration optimized for high-power density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - Gate (G) | Control electrode | Logic-level compatible (VGS(th) = 1.0–2.5V); requires <110nC charge for full enhancement; sensitive to ESD. |
| 2 - Drain (D) | Main current output terminal | Internally connected to exposed copper pad; primary thermal path to PCB heatsink; carries full load current. |
| 3 - Source (S) | Main current return terminal | Reference node for gate drive; connects to power ground; body diode anode; low-inductance routing essential. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at 4.5V VGS, eliminating need for gate boosters in 3.3V/5V MCU-controlled systems. |
| Fully avalanche rated | Guaranteed 390mJ single-pulse energy handling enables robustness in inductive load switching without snubbers. |
| Low RDS(on) × Qg figure of merit | 0.77Ω·nC - Balances conduction and switching losses for high-efficiency SMPS designs up to 500kHz. |
| 175°C maximum junction temperature | Supports extended thermal margin in sealed enclosures or high-ambient industrial environments. |
| Dynamic dv/dt immunity | Rated for 1.2V/ns - prevents false turn-on during fast voltage transients in half-bridge configurations. |
Applications
| DC-DC Synchronous Rectifier | Automotive Motor Driver |
|---|---|
|
Use Scenario: High-current buck converter in 12V automotive infotainment power supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: 0.007Ω RDS(on) cuts rectifier loss by >60% vs. 40V/100A Schottky, improving efficiency from 88% to 94% at 60A. |
Use Scenario: H-bridge driver for 24V BLDC fan in engine cooling module. IC Role / Device Role / Timing Role: High-current quadrant switch controlling motor phase current direction and braking. Use Value: 175°C TJ rating and 390mJ EAS ensure reliability during stall conditions and PWM-induced inductive kickback. |
| Industrial Battery Protection | Server VRM High-Side Switch |
|
Use Scenario: Overcurrent and short-circuit protection circuit in 24V LiFePO4 backup battery pack. IC Role / Device Role / Timing Role: Main discharge FET controlled by protection IC to interrupt fault currents within microseconds. Use Value: 400A pulsed drain rating (IDM) and 1.2°C/W RθJC enable rapid fault clearing without thermal runaway. |
Use Scenario: High-side switch in multiphase 1V/150A CPU voltage regulator module. IC Role / Device Role / Timing Role: Power delivery switch synchronized with gate driver for precise current sourcing. Use Value: 110nC Qg and 210ns rise time support 1MHz+ switching, reducing output filter size while maintaining <1% voltage ripple. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | VDSS = 40V, RDS(on) = 0.020Ω @ 10V, Qg = 131nC, TO-220 package | Higher voltage rating but higher on-resistance and larger footprint; not surface-mount | Choose when 40V system margin is required and through-hole mounting is acceptable. |
| STP100N3LLH6 | VDSS = 30V, RDS(on) = 0.0035Ω @ 10V, Qg = 120nC, TO-220FP package | Lower RDS(on) but higher gate charge and different thermal profile; not D2Pak-compatible | Prefer when ultra-low conduction loss dominates over gate drive complexity and PCB space constraints. |
Compared with IRL2203STRR, IRF1404PBF trades lower voltage rating for higher on-resistance and non-SMT packaging, while STP100N3LLH6 improves conduction loss but increases gate drive demand and lacks D2Pak thermal performance-making IRL2203STRR optimal for compact, high-current, logic-level-driven SMT power stages.
Availability
IRL2203STRR is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and battery protection systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for IRL2203STRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial and automotive markets.
The IRL2203STRR belongs to the HEXFET® logic-level power MOSFET family, engineered for high-current, low-voltage switching in space-constrained, thermally demanding applications such as server VRMs and automotive subsystems.
FAQ
What is the maximum continuous drain current for IRL2203STRR at 100°C case temperature?
The IRL2203STRR supports 71A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the D2Pak package and must be verified against actual board-level thermal resistance and ambient conditions in the final design. The IRL2203STRR's 1.2°C/W RθJC enables effective heatsinking when the drain pad is properly soldered to a large copper area.
Does IRL2203STRR require a gate resistor for stable switching?
Yes, the IRL2203STRR benefits from an external gate resistor (typically 1.8Ω as used in datasheet switching tests) to dampen ringing caused by its 3500pF Ciss and PCB trace inductance. Without proper gate resistance, the 110nC Qg and fast 210ns rise time can excite parasitic oscillations, leading to increased EMI and potential gate oxide stress. The IRL2203STRR's gate threshold uniformity ensures predictable turn-on even with moderate series resistance.
Can IRL2203STRR replace IRL2203N in existing designs?
Yes, the IRL2203STRR is the tape-and-reel version of the IRL2203N and shares identical electrical specifications, thermal ratings, and pinout. Both use the D2Pak package with gate-drain-source pin assignments and 30V/100A/0.007Ω characteristics. The IRL2203STRR differs only in packaging format (reel vs. tube), making it drop-in compatible for automated assembly without layout or schematic changes.
What is the body diode forward voltage of IRL2203STRR at 60A?
The IRL2203STRR body diode exhibits a typical forward voltage of 1.3V at 60A and TJ = 25°C, as measured with VGS = 0V. This value increases with junction temperature and decreases slightly at higher currents due to conductivity modulation. The IRL2203STRR's body diode recovery time (94–140ns) and Qrr (280–410nC) are characterized for synchronous rectifier and freewheeling applications.
Is IRL2203STRR suitable for automotive under-hood applications?
Yes, the IRL2203STRR is qualified for automotive under-hood use due to its 175°C maximum junction temperature, fully avalanche-rated construction (390mJ EAS), and robust dv/dt immunity (1.2 V/ns). Its D2Pak package provides superior thermal coupling to PCB heatsinks compared to TO-220 alternatives. The IRL2203STRR meets AEC-Q101 stress test requirements when sourced through authorized Infineon channels.
IRL2203STRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 130W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL2203STRR FAQ
1.How can I place an order for IRL2203STRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL2203STRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL2203STRR reliable?
The price and inventory of IRL2203STRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2203STRR is usually 5 days.
3.What payment methods are accepted for IRL2203STRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2203STRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL2203STRR?
IRL2203STRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL2203STRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL2203STRR?
For technical support, including IRL2203STRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2203STRR requirements.
6.How does Aetrix verify that IRL2203STRR is sourced from the original manufacturer or authorized distributors?
All IRL2203STRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2203STRR meets industry standards.
7.What is the process for return or replacement of IRL2203STRR?
All IRL2203STRR units undergo pre-shipment inspection (PSI). If there is an issue with IRL2203STRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL2203STRR part is unused and in its original packaging.
Return procedure for IRL2203STRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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