Vishay Siliconix IRL3402L

Overview

IRL3402L from International Rectifier is a logic-level N-channel enhancement-mode Power MOSFET in TO-220AB package, designed for high-efficiency CPU core DC-DC converters. It delivers 85 A continuous drain current at V_GS = 5.0 V, features R_DS(on) = 0.01 Ω (typ. at V_GS = 4.5 V, I_D = 51 A), and supports fast switching with t_r = 140 ns and t_f = 120 ns.

For engineers reviewing the IRL3402L datasheet, IRL3402L pinout, IRL3402L application, or IRL3402L equivalent, key selection criteria include low gate threshold voltage (V_GS(th) = 0.7–1.0 V), optimized 4.5–7.0 V gate drive compatibility, avalanche ruggedness (E_AS = 290 mJ), and thermal performance (R_θJC = 1.1 °C/W).

Technical Context

The IRL3402L uses advanced HEXFET® process technology with an optimized gate oxide to achieve low R_DS(on) and high transconductance (g_fs = 65 S) at logic-level gate drive. Its body diode exhibits t_rr = 72–110 ns and Q_rr = 160–240 nC, supporting synchronous rectification in buck converters.

Thermal design is enabled by its TO-220AB package with low junction-to-case resistance (1.1 °C/W) and linear derating factor of 0.91 W/°C above 25°C. Absolute maximum V_GS is ±10 V, with transient tolerance up to 14 V for startup.

Key Specifications

Pinout & Package

Package: TO-220AB - Industry-standard through-hole power package with integral heat sink tab (Drain-connected), rated for ≤110 W dissipation at T_C = 25°C and linearly derated above.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3402L, IRL3803PbF offers lower on-resistance at the cost of increased gate charge, while STP80NF55-08 provides higher voltage headroom but lacks true logic-level operation-making IRL3402L optimal for 3.3–5 V-controlled, 20 V-class CPU core and PoL applications where gate drive simplicity and thermal efficiency are prioritized.

Availability

IRL3402L is available at Aetrix Electronics and suitable for CPU core VRMs, point-of-load DC-DC converters, and industrial hot-swap protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IRL3402L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET and IGBT design, headquartered in El Segundo, CA, with global R&D and manufacturing infrastructure.

The IRL3402L belongs to the HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and telecom infrastructure where low gate drive voltage and thermal performance are critical.

FAQ

What is the maximum continuous drain current for the IRL3402L at 100°C case temperature?

The IRL3402L supports 54 A continuous drain current at T_C = 100°C with V_GS = 5.0 V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and silicon die; actual usable current depends on heatsinking, ambient conditions, and PCB copper area. The IRL3402L's R_θJC = 1.1 °C/W enables predictable thermal modeling for system-level validation.

Does the IRL3402L have avalanche capability, and how is it rated?

Yes, the IRL3402L is fully avalanche-rated with E_AS = 290 mJ (single-pulse, T_J starting at 25°C) and I_AR = 51 A. These values are measured under standardized test conditions (L = 220 µH, R_G = 25 Ω) and confirm ruggedness against unclamped inductive switching-critical for reliability in VRM phase-legs and motor drive half-bridges where IRL3402L may experience transient overvoltage.

What is the gate threshold voltage range for the IRL3402L, and why does it matter?

The IRL3402L has a gate threshold voltage V_GS(th) of 0.70–1.0 V (min–max) at I_D = 250 µA. This ultra-low threshold ensures full enhancement with standard 3.3 V or 5 V PWM controllers-eliminating external level shifters and reducing BOM count. In practice, the IRL3402L achieves R_DS(on) < 0.012 Ω even at V_GS = 3.3 V, making it ideal for low-voltage logic-driven power stages.

Can the IRL3402L be used in synchronous rectification applications?

Yes, the IRL3402L is well-suited for synchronous rectification due to its fast, low-loss body diode: t_rr = 72 ns (typ.), Q_rr = 160 nC (typ.), and V_SD = 1.3 V (at I_S = 51 A, T_J = 25°C). When paired with a complementary low-side FET and proper dead-time control, the IRL3402L reduces conduction and recovery losses versus Schottky diodes-especially beneficial in high-frequency, high-current buck converters where IRL3402L serves as the upper switch.

What is the thermal resistance from junction to case (R_θJC) for the IRL3402L, and how should it be applied in layout?

The IRL3402L has R_θJC = 1.1 °C/W, measured between the silicon junction and the metal tab (Drain-connected). For thermal design, this value assumes full, flat, greased contact between the tab and heatsink. Layout best practices include using ≥2 oz copper on the drain pad, thermal vias under the tab, and mechanical mounting torque of 10 lbf·in (1.1 N·m) to maintain low interfacial resistance-ensuring the IRL3402L sustains 85 A continuous operation within safe junction temperature limits.