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Vishay Siliconix IRL510PBF-BE3
- Part No.:
- IRL510PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL510PBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 5.6A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:332
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Product details
Overview
IRL510PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 100 V VDS, 5.6 A continuous drain current at TC = 25 °C, and 0.54 Ω RDS(on) at VGS = 5 V. It features repetitive avalanche rating, 175 °C max junction temperature, and fast switching for DC-DC converters, motor control, and power supply high-side switching.
For engineers reviewing the IRL510PBF-BE3 datasheet, IRL510PBF-BE3 pinout, IRL510PBF-BE3 application, or IRL510PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V, avalanche ruggedness, thermal performance (RthJC = 3.5 °C/W), and TO-220AB mechanical fit for heatsink-mounting industrial power stages.
Technical Context
This MOSFET belongs to Vishay's third-generation power MOSFET family optimized for fast switching and ruggedized operation. Its dynamic dV/dt rating of 5.5 V/ns and unclamped inductive switching capability (EAS = 100 mJ) support reliable operation in hard-switched topologies without external snubbers.
The device integrates a robust body diode with trr = 110–130 ns and Qrr = 0.50–0.65 μC, enabling efficient freewheeling in synchronous rectification and half-bridge configurations. Gate charge parameters (Qg = 6.1 nC, Qgd = 3.3 nC) indicate moderate drive strength requirements suitable for microcontroller GPIO or dedicated gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input voltages up to 80 V DC in buck converters or 48 V bus systems with margin. |
| RDS(on) @ VGS = 5 V | 0.54 Ω - enables ≤ 15 W conduction loss at 5.6 A, suitable for medium-power switching stages. |
| Qg | 6.1 nC - allows full turn-on with <1 mA average gate drive current at 100 kHz switching. |
| ID (continuous, TC = 25 °C) | 5.6 A - delivers ~280 W output in Class-D audio or 250 W DC-DC with proper heatsinking. |
| TJ max | +175 °C - permits operation in sealed enclosures or high-ambient industrial environments. |
| EAS | 100 mJ - withstands single-pulse inductive energy spikes without failure in relay/motor drive circuits. |
| VGS(th) | 1.0–2.0 V - ensures full enhancement with standard 3.3 V or 5 V logic outputs, no level-shifting needed. |
Pinout & Package
IRL510PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 3.5 °C/W) and mechanical compatibility with universal heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Accepts logic-level voltage (≥4 V) to fully enhance channel; requires <100 nA leakage current handling. |
| D (Drain) | High-side power node | Connected to internal die substrate and metal tab; must be electrically isolated from heatsink unless referenced to system ground. |
| S (Source) | Return path / reference | Serves as local ground for gate drive; source inductance (LS = 7.5 nH) impacts switching ringing in high-dI/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4–5 V, eliminating need for gate driver ICs in microcontroller-based power stages. |
| Repetitive avalanche rated | Rated for IAR = 5.6 A and EAR = 4.3 mJ, enabling robustness against transient overloads in motor commutation. |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents false turn-on during high-slew-rate voltage transients in bridge configurations. |
| Low RDS(on) at low VGS | 0.76 Ω at VGS = 4 V ensures stable on-state performance across wide VCC tolerances in 5 V systems. |
| 175 °C operating temperature | Enables deployment in thermally constrained spaces such as enclosed LED drivers or automotive under-hood modules. |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: Step-down regulation from 48 V to 12 V in industrial PLC power supplies. IC Role / Device Role / Timing Role: High-side synchronous switch controlling duty cycle and current flow into LC filter. Use Value: Low RDS(on) minimizes conduction loss; fast switching (tr/tf < 50 ns) reduces transition loss at 200 kHz operation. |
Use Scenario: H-bridge half-bridge leg driving 24 V, 3 A brushed motors in automated gate controllers. IC Role / Device Role / Timing Role: Unidirectional power switch enabling PWM speed control and direction reversal via complementary pair. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM off-time; logic-level drive simplifies MCU interface. |
| LED Constant-Current Driver | AC-DC Secondary-Side Switch |
Use Scenario: Constant-current dimming circuit for high-brightness LED strings in commercial lighting fixtures. IC Role / Device Role / Timing Role: Series-pass switch regulating LED current via analog/PWM feedback loop. Use Value: Tight VGS(th) tolerance (1.0–2.0 V) ensures consistent turn-on across temperature; 175 °C rating supports sealed fixture operation. |
Use Scenario: Active OR-ing or hold-up switch in 12 V output stage of server SMPS units. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode in secondary-side synchronous rectification or redundancy path. Use Value: Body diode trr ≤ 130 ns prevents reverse recovery losses; RDS(on) < 0.54 Ω cuts forward drop vs. 0.4 V diode at 5 A. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | RDS(on) = 0.018 Ω @ VGS = 10 V; VDS = 60 V; not logic-level optimized below 4.5 V. | Better conduction efficiency at higher gate voltage; unsuitable for 3.3 V drive or 80+ V bus systems. | Select when gate drive ≥ 5 V is guaranteed and voltage stress remains < 60 V. |
| IRFZ44NPBF | RDS(on) = 0.028 Ω @ VGS = 10 V; VDS = 55 V; VGS(th) = 2–4 V - less compatible with 3.3 V logic. | Higher peak current (49 A) but lower voltage rating; requires stronger gate drive for full enhancement. | Prefer for cost-sensitive 24–48 V systems where gate voltage ≥ 5 V and avalanche rating is secondary. |
Compared with STP55NF06L and IRFZ44NPBF, the IRL510PBF-BE3 offers superior 100 V rating and guaranteed logic-level operation down to 4 V, making it uniquely suited for 48 V industrial power stages requiring direct MCU control and rugged transient handling - without sacrificing thermal margin or package compatibility.
Availability
IRL510PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, LED drivers, and AC-DC secondary-side switching requiring stable component supply, RoHS-compliant lead-free/halogen-free construction, and long-term industrial lifecycle support.
Supply support for IRL510PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.
The IRL510PBF-BE3 belongs to Vishay's logic-level power MOSFET product line engineered for industrial power conversion, motor control, and high-efficiency switching where direct microcontroller interfacing and avalanche survivability are critical design requirements.
FAQ
What is the maximum continuous drain current for IRL510PBF-BE3 at 100 °C case temperature?
The IRL510PBF-BE3 supports 4.0 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limits of the TO-220AB package and ensures safe operation within RthJC = 3.5 °C/W and maximum junction temperature of 175 °C. Designers must verify heatsink thermal resistance to maintain TC ≤ 100 °C under full load.
Does IRL510PBF-BE3 have a built-in body diode, and what are its key parameters?
Yes, the IRL510PBF-BE3 integrates a monolithic body diode with typical forward voltage VSD = 2.5 V at IS = 5.6 A and TJ = 25 °C. Its reverse recovery time trr is 110–130 ns, and reverse recovery charge Qrr is 0.50–0.65 μC. These values enable use in freewheeling paths of buck converters and half-bridge topologies without external diode supplementation.
Is IRL510PBF-BE3 suitable for avalanche operation, and what are its rated limits?
Yes, the IRL510PBF-BE3 is explicitly rated for repetitive avalanche operation: IAR = 5.6 A and EAR = 4.3 mJ. It also supports single-pulse avalanche energy up to EAS = 100 mJ. These ratings are validated per test conditions in Figure 12 and allow safe operation during inductive turn-off transients in motor and solenoid drive applications without external clamping.
What is the gate threshold voltage range for IRL510PBF-BE3, and how does it affect logic-level compatibility?
The IRL510PBF-BE3 has a gate-source threshold voltage VGS(th) of 1.0–2.0 V at ID = 250 μA. This low, tightly specified range ensures full enhancement with standard 3.3 V or 5 V logic outputs - confirming true logic-level operation. Unlike higher-threshold MOSFETs, the IRL510PBF-BE3 avoids partial turn-on and excessive heating when driven directly by microcontrollers or logic gates.
How does the TO-220AB package of IRL510PBF-BE3 impact thermal and mechanical design?
The TO-220AB package of IRL510PBF-BE3 features a drain-connected metal tab with RthJC = 3.5 °C/W, enabling efficient heat transfer to external heatsinks. Its standardized footprint and mounting hole (6-32 or M3) simplify mechanical integration. Designers must electrically isolate the tab unless drain is at system ground, and observe 10 lbf·in (1.1 N·m) maximum mounting torque to avoid package damage.
IRL510PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 3.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL510PBF-BE3 FAQ
1.How can I place an order for IRL510PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL510PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL510PBF-BE3 reliable?
The price and inventory of IRL510PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL510PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRL510PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL510PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL510PBF-BE3?
IRL510PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL510PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL510PBF-BE3?
For technical support, including IRL510PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL510PBF-BE3 requirements.
6.How does Aetrix verify that IRL510PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRL510PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL510PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRL510PBF-BE3?
All IRL510PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL510PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL510PBF-BE3 part is unused and in its original packaging.
Return procedure for IRL510PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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