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Vishay Siliconix IRL510SPBF
- Part No.:
- IRL510SPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL510SPBF.pdf
- Description:
- MOSFET N-CH 100V 5.6A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,247
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Product details
Overview
IRL510SPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V VDS, 5.6 A continuous drain current at TC = 25 °C, and 0.54 Ω RDS(on) at VGS = 5 V. It supports fast switching with 6.1 nC total gate charge and operates up to 175 °C junction temperature - ideal for DC-DC synchronous rectification and motor control in industrial power supplies.
For engineers reviewing the IRL510SPBF datasheet, IRL510SPBF pinout, IRL510SPBF application, or IRL510SPBF equivalent, this page delivers verified electrical specs, thermal derating behavior, avalanche energy rating (100 mJ), body diode recovery characteristics (trr = 110–130 ns), and PCB-mount thermal resistance (RthJA = 40 °C/W) - all critical for high-reliability power stage design.
Technical Context
This MOSFET employs third-generation silicon process optimized for low RDS(on) and ruggedized avalanche performance. Its logic-level gate threshold (VGS(th) = 1.0–2.0 V) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting circuitry. The device features integrated body diode with controlled reverse recovery (Qrr = 0.50–0.65 μC) and specified dv/dt immunity (5.5 V/ns).
Thermally, it leverages the D2PAK's low RthJC (3.5 °C/W) and high power dissipation capability (43 W at TC = 25 °C). Derating is linear at 0.29 W/°C above 25 °C case temperature, and PCB-mount power limit is 3.7 W at TA = 25 °C with 1"² FR-4 board - enabling accurate thermal margining in compact layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 48 V nominal systems with 2× safety margin for transient spikes |
| RDS(on) @ VGS = 5 V | 0.54 Ω - enables <1.5 W conduction loss at 5.6 A, reducing heatsink requirements |
| Qg | 6.1 nC - allows efficient switching at 100–500 kHz with moderate gate driver strength (e.g., TC4427) |
| EAS | 100 mJ - provides unclamped inductive switching robustness in relay drivers and solenoid controls |
| trr | 110–130 ns - minimizes cross-conduction risk in synchronous buck converters operating >100 kHz |
| TJ max | +175 °C - permits operation in sealed enclosures or high-ambient environments without forced cooling |
| ID @ TC = 100 °C | 4.0 A - defines usable current limit under sustained thermal stress in chassis-mounted designs |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S); standard JEDEC outline; recommended minimum pad layout per Vishay AN826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Logic-level compatible (VGS(th) ≤ 2.0 V); requires <100 nA leakage current handling in gate driver design |
| D (Drain) | High-side power node | Connected to exposed metal tab - must be tied to system ground or high-voltage rail per topology; primary thermal path |
| S (Source) | Reference node / return path | Low-inductance source routing essential; internal LS = 7.5 nH impacts switching ringing and gate drive stability |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4 V - eliminates need for gate boosters in 3.3 V MCU-based motor drivers |
| Repetitive avalanche rated | Rated for 4.3 mJ repetitive avalanche energy - supports reliable operation in inductive load switching without snubbers |
| Dynamic dv/dt immunity | 5.5 V/ns rated - suppresses false turn-on during high-speed voltage transients in half-bridge configurations |
| 175 °C maximum junction temperature | Enables use in automotive under-hood or industrial HVAC applications without derating for ambient >85 °C |
| RoHS-compliant, lead-free | Meets EU RoHS Directive 2011/65/EU - suitable for consumer and industrial products requiring halogen-free assembly |
Applications
| DC-DC Synchronous Rectifier | Brushed DC Motor Driver |
|---|---|
|
Use Scenario: Secondary-side switch in isolated 12 V–24 V output flyback or forward converter. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction losses. Use Value: 0.54 Ω RDS(on) cuts rectifier loss by >60% vs. 40 V/5 A Schottky, improving efficiency from 87% to 92% at full load. |
Use Scenario: H-bridge low-side switch controlling 12 V brushed motor in robotics or actuator systems. IC Role / Device Role / Timing Role: Power switch driven directly by MCU GPIO with no external level shifter. Use Value: Logic-level VGS(th) ensures full enhancement at 3.3 V, enabling single-supply control and eliminating gate driver ICs. |
| Industrial Solenoid Controller | LED Constant-Current Driver |
|
Use Scenario: High-current on/off control of 24 V/3 A solenoids in PLC I/O modules. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via avalanche mode. Use Value: 100 mJ single-pulse avalanche energy handles 4.8 mH coil energy without external clamping diodes or snubbers. |
Use Scenario: Constant-current sink for high-brightness LED strings in signage or architectural lighting. IC Role / Device Role / Timing Role: Linear-mode current regulator with PWM dimming interface. Use Value: 175 °C TJ max and 0.29 W/°C derating allow stable 2 A current regulation even in thermally constrained aluminum housings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF510PBF | VGS(th) = 2.0–4.0 V; RDS(on) = 0.54 Ω @ VGS = 10 V only; not logic-level | Requires 10 V gate drive - unsuitable for 3.3 V MCU direct drive; higher gate charge (15 nC) | Select IRL510SPBF when gate drive voltage ≤ 5 V or when minimizing driver component count is critical. |
| STP55NF06L | VDS = 60 V; RDS(on) = 0.022 Ω @ VGS = 5 V; higher current (55 A) | Lower voltage rating limits use to ≤24 V systems; over-specified for 100 V applications | Choose STP55NF06L only if 60 V rating suffices and ultra-low RDS(on) justifies larger D2PAK footprint and cost premium. |
Compared with IRF510PBF and STP55NF06L, the IRL510SPBF uniquely balances 100 V rating, true logic-level operation, and D2PAK thermal performance - making it optimal for space-constrained 24–48 V industrial controls where gate drive simplicity and avalanche ruggedness are prioritized over ultra-low on-resistance.
Availability
IRL510SPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and solenoid control systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRL510SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.
The IRL510SPBF belongs to Vishay's logic-level power MOSFET family designed specifically for high-efficiency, low-voltage gate drive applications in industrial automation, power conversion, and embedded control systems.
FAQ
What is the maximum continuous drain current for IRL510SPBF at 100 °C case temperature?
The IRL510SPBF supports 4.0 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This value reflects linear derating from 5.6 A at 25 °C using the 0.29 W/°C factor and accounts for reduced thermal headroom in enclosed or high-ambient environments. Always verify actual junction temperature using RthJC = 3.5 °C/W in thermal simulations.
Does IRL510SPBF have avalanche capability, and how is it rated?
Yes, the IRL510SPBF is repetitively avalanche rated with EAR = 4.3 mJ and single-pulse EAS = 100 mJ. These values are measured under defined conditions (VDD = 25 V, L = 4.8 mH, IAS = 5.6 A) and enable reliable inductive switching without external protection. Repetitive rating assumes pulse width and duty cycle limits per Figure 11 in the datasheet.
Can IRL510SPBF be driven directly by a 3.3 V microcontroller GPIO?
Yes, the IRL510SPBF is a logic-level MOSFET with VGS(th) = 1.0–2.0 V and fully specified RDS(on) at VGS = 4 V and 5 V. At 3.3 V, it achieves partial enhancement - typical RDS(on) rises to ~0.85 Ω - sufficient for low-duty-cycle or low-current applications. For full 5.6 A capability, 5 V drive is recommended.
What is the thermal resistance from junction to ambient for IRL510SPBF in PCB mount?
When mounted on a 1"² FR-4 PCB, the IRL510SPBF has RthJA = 40 °C/W. This value assumes standard JEDEC test conditions and is critical for estimating junction temperature rise in non-heatsinked applications. For chassis-mounted designs with heatsinking, RthJC = 3.5 °C/W governs thermal design.
How does the body diode performance of IRL510SPBF compare to standard rectifiers?
The IRL510SPBF body diode has trr = 110–130 ns and Qrr = 0.50–0.65 μC at TJ = 25 °C, which is significantly faster than general-purpose rectifiers but slower than dedicated ultrafast diodes. Its VSD = 2.5 V at 5.6 A makes it suitable for synchronous rectification where conduction loss trade-offs favor MOSFET on-resistance over diode forward drop.
IRL510SPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 3.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL510SPBF FAQ
1.How can I place an order for IRL510SPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL510SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL510SPBF reliable?
The price and inventory of IRL510SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL510SPBF is usually 5 days.
3.What payment methods are accepted for IRL510SPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL510SPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL510SPBF?
IRL510SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL510SPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL510SPBF?
For technical support, including IRL510SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL510SPBF requirements.
6.How does Aetrix verify that IRL510SPBF is sourced from the original manufacturer or authorized distributors?
All IRL510SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL510SPBF meets industry standards.
7.What is the process for return or replacement of IRL510SPBF?
All IRL510SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL510SPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL510SPBF part is unused and in its original packaging.
Return procedure for IRL510SPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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