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Vishay Siliconix IRL510STRLPBF
- Part No.:
- IRL510STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL510STRLPBF.pdf
- Description:
- MOSFET N-CH 100V 5.6A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:601
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Product details
Overview
IRL510STRLPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V VDS, 5.6 A continuous drain current at TC = 25 °C, and 0.54 Ω RDS(on) at VGS = 5 V. It supports fast switching with 6.1 nC total gate charge and operates up to 175 °C junction temperature-ideal for DC-DC converters and motor control circuits requiring robust avalanche capability and surface-mount power handling.
For engineers reviewing the IRL510STRLPBF datasheet, IRL510STRLPBF pinout, IRL510STRLPBF application, or IRL510STRLPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), repetitive avalanche rating (EAR = 4.3 mJ), low RDS(on) at 4 V drive (0.76 Ω), thermal resistance (RthJC = 3.5 °C/W), and D2PAK package suitability for high-current PCB-mount designs.
Technical Context
This third-generation power MOSFET uses planar silicon technology optimized for low on-resistance and ruggedized unclamped inductive switching. Its dynamic dv/dt rating (5.5 V/ns) and specified body diode recovery (trr = 110–130 ns, Qrr = 0.50–0.65 μC) support reliable operation in hard-switched topologies without external snubbers.
The device features a single N-channel configuration with integrated body diode, characterized for linear derating (0.29 W/°C) and validated for repetitive avalanche energy up to 4.3 mJ under defined pulse conditions (IAR = 5.6 A, TJ ≤ 175 °C). Gate charge distribution (Qgs = 2.6 nC, Qgd = 3.3 nC) enables predictable turn-on/turn-off timing in PWM-driven applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage before breakdown; suitable for 48 V bus and flyback primary-side switching |
| RDS(on) @ VGS = 5 V | 0.54 Ω - Low conduction loss at standard logic-level drive; enables <1.5 W dissipation at 5.6 A |
| Qg | 6.1 nC - Total gate charge determines driver strength requirement; compatible with low-power gate drivers |
| ID (continuous, TC = 25 °C) | 5.6 A - Rated current with heatsink; derates to 4.0 A at 100 °C case temperature |
| EAS | 100 mJ - Single-pulse avalanche energy; allows safe operation during inductive load turn-off transients |
| RthJC | 3.5 °C/W - Junction-to-case thermal resistance; enables efficient heat transfer to PCB copper or heatsink |
| trr | 110–130 ns - Body diode reverse recovery time; impacts switching losses in synchronous rectification |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); 1" square FR-4 PCB mount capable of dissipating 3.7 W ambient.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Logic-level compatible input (VGS(th) = 1.0–2.0 V); requires <100 nA leakage current budget |
| D (Drain) | High-side power terminal | Connected to exposed metal tab; carries full load current and serves as primary thermal path to PCB |
| S (Source) | Reference and return path | Common node for gate drive reference and load return; internal source inductance LS = 7.5 nH affects switching ringing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4 V - eliminates need for gate boosters in 3.3 V/5 V microcontroller interfaces |
| Repetitive avalanche rated | Rated for 4.3 mJ EAR - enables reliable operation in inductive switching without external clamping |
| Dynamic dv/dt immunity | 5.5 V/ns rated - suppresses false turn-on in high-speed half-bridge or H-bridge configurations |
| 175 °C maximum junction temperature | Enables high-temperature industrial environments without derating penalties beyond datasheet curves |
| Ruggedized die construction | Third-generation planar process - improves UIS (unclamped inductive switching) robustness vs. prior generations |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
Use Scenario: Step-down converter operating from 48 V input to 12 V output at 100 kHz switching frequency. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer via duty-cycle modulation. Use Value: Low RDS(on) (0.54 Ω) minimizes conduction loss; 6.1 nC Qg ensures efficient gate drive with low-power controller. |
Use Scenario: 24 V brushed motor controlled by microcontroller PWM signal driving one side of H-bridge. IC Role / Device Role / Timing Role: High-side N-channel switch enabling bidirectional control when paired with low-side complement. Use Value: Logic-level gate threshold (1.0–2.0 V) allows direct MCU GPIO drive; avalanche rating protects against motor back-EMF spikes. |
| LED Constant-Current Driver | Power Supply OR-ing Circuit |
Use Scenario: High-brightness LED string driven from 36 V supply with analog dimming via gate voltage adjustment. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator using RDS(on) as sense element or switch. Use Value: Tight VGS(th) tolerance (1.0–2.0 V) enables stable current regulation; 175 °C rating supports enclosed fixture thermal environments. |
Use Scenario: Dual-input 24 V power supply system where IRL510STRLPBF replaces ideal diode in OR-ing configuration. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode; body diode conducts until gate turns on for forward conduction. Use Value: Low VSD (2.5 V) and fast trr (110–130 ns) reduce forward drop and reverse recovery loss versus discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF510PBF | VGS(th) = 2.0–4.0 V; higher RDS(on) = 0.54 Ω @ VGS = 10 V only; not logic-level rated | Requires 10 V gate drive; unsuitable for 3.3 V/5 V MCU direct drive | Select IRL510STRLPBF when logic-level compatibility and lower gate drive voltage are required. |
| STP55NF06L | VDS = 60 V; RDS(on) = 0.018 Ω @ VGS = 10 V; logic-level but lower voltage rating | Not suitable for 100 V applications; better for 24–48 V systems needing ultra-low RDS(on) | Choose IRL510STRLPBF for 100 V blocking with logic-level gate; STP55NF06L only if voltage margin permits. |
Compared with IRF510PBF and STP55NF06L, the IRL510STRLPBF uniquely delivers 100 V blocking, logic-level gate drive (VGS(th) ≤ 2.0 V), and avalanche-rated ruggedness in a thermally efficient D2PAK package-making it optimal for industrial 48 V systems where gate drive simplicity and transient robustness are critical.
Availability
IRL510STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drives, and LED constant-current regulators requiring stable component supply across extended production lifecycles.
Supply support for IRL510STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRL510STRLPBF belongs to Vishay's logic-level power MOSFET product line designed specifically for high-efficiency, surface-mount power switching in space-constrained industrial controls and embedded power supplies.
FAQ
What is the maximum continuous drain current for IRL510STRLPBF at 100 °C case temperature?
The IRL510STRLPBF supports 4.0 A continuous drain current at TC = 100 °C, per the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be verified against actual PCB layout and heatsinking. The IRL510STRLPBF maintains safe operation up to 175 °C junction temperature, with linear derating factor of 0.29 W/°C above 25 °C case temperature.
Does IRL510STRLPBF have avalanche capability, and how is it rated?
Yes, the IRL510STRLPBF is repetitively avalanche rated with EAR = 4.3 mJ and single-pulse EAS = 100 mJ. These values are measured under defined test conditions (IAR = 5.6 A, VDD = 25 V, L = 4.8 mH, Rg = 25 Ω). The IRL510STRLPBF's ruggedized die design ensures reliable operation during inductive switching transients without external protection.
What is the gate-source threshold voltage range for IRL510STRLPBF?
The gate-source threshold voltage (VGS(th)) for IRL510STRLPBF is specified from 1.0 V to 2.0 V at TJ = 25 °C and ID = 250 μA. This logic-level range ensures full enhancement at 4 V and 5 V gate drive, making the IRL510STRLPBF compatible with standard microcontroller GPIO outputs without level-shifting circuitry.
Can IRL510STRLPBF be used in surface-mount applications with standard reflow profiles?
Yes, the IRL510STRLPBF is qualified for surface-mount assembly using standard lead-free reflow profiles, with peak soldering temperature up to 300 °C for 10 seconds. Its D2PAK (TO-263) package is designed for automated placement and thermal reliability on FR-4 PCBs, including recommended minimum pad layouts published by Vishay for optimal thermal and mechanical performance.
How does the body diode performance of IRL510STRLPBF compare to discrete Schottky diodes?
The IRL510STRLPBF body diode has VSD = 2.5 V at IS = 5.6 A and trr = 110–130 ns, which is slower and higher-drop than most Schottky diodes-but sufficient for freewheeling in moderate-frequency PWM applications. Unlike Schottky diodes, the IRL510STRLPBF body diode is monolithically integrated and shares thermal characteristics with the MOSFET die, simplifying thermal design in compact layouts.
IRL510STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 540mOhm @ 3.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 250 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 43W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL510STRLPBF FAQ
1.How can I place an order for IRL510STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL510STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL510STRLPBF reliable?
The price and inventory of IRL510STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL510STRLPBF is usually 5 days.
3.What payment methods are accepted for IRL510STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL510STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL510STRLPBF?
IRL510STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL510STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL510STRLPBF?
For technical support, including IRL510STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL510STRLPBF requirements.
6.How does Aetrix verify that IRL510STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRL510STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL510STRLPBF meets industry standards.
7.What is the process for return or replacement of IRL510STRLPBF?
All IRL510STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL510STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL510STRLPBF part is unused and in its original packaging.
Return procedure for IRL510STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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