Vishay Siliconix IRL520

Overview

IRL520 from Vishay Siliconix is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 100 V V_DS, 9.2 A continuous drain current at T_C = 25 °C, and 0.27 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and operates up to 175 °C junction temperature - commonly used in DC-DC converter primary-side switches and motor drive half-bridges.

For engineers reviewing the IRL520 datasheet, IRL520 pinout, IRL520 application, or IRL520 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 170 mJ), thermal resistance (R_thJC = 2.5 °C/W), and TO-220AB mechanical footprint.

Technical Context

The IRL520 uses planar V-groove silicon technology optimized for high ruggedness and fast switching in hard-switched topologies. Its gate charge profile (Q_g = 12 nC, Q_gd = 7.1 nC) enables efficient control with standard logic-level drivers, while internal body diode parameters (t_rr = 130–190 ns, Q_rr = 0.83–1.0 μC) support moderate-frequency freewheeling in non-synchronous converters.

Thermal design relies on direct case-to-heatsink mounting (R_thCS = 0.50 °C/W) and low R_thJC = 2.5 °C/W, enabling 60 W power dissipation at T_C = 25 °C. The device is specified for operation across –55 °C to +175 °C and features dynamic dV/dt immunity up to 5.5 V/ns.

Key Specifications

Pinout & Package

IRL520 is housed in a through-hole TO-220AB package with isolated tab (drain-connected). Mounting screw hole accepts M3 or 6-32 hardware; recommended torque is 1.1 N·m. Thermal path is optimized via flat case surface contacting heatsink directly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with STP55NF06L and FQP30N06L, the IRL520 provides superior voltage margin (100 V), balanced gate charge (12 nC), and proven avalanche capability (170 mJ E_AS) - making it preferred for industrial 48–100 V systems where reliability under fault conditions is critical.

Availability

IRL520 is available at Aetrix Electronics and suitable for DC-DC converters, motor drive half-bridges, and LED constant-current drivers requiring stable component supply, long-term lifecycle support, and RoHS-compliant variants (IRL520PbF).

Supply support for IRL520 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRL520 belongs to Vishay's third-generation logic-level Power MOSFET family, engineered for rugged switching in commercial-industrial power conversion where ease of paralleling, thermal stability, and avalanche tolerance are essential.

FAQ

What is the maximum continuous drain current for the IRL520 at 100 °C case temperature?

The IRL520 supports 6.5 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This reflects thermal derating from 9.2 A at 25 °C using the linear derating factor of 0.40 W/°C. At 100 °C case, power dissipation is limited to 32 W, and R_DS(on) increases with temperature - actual current capability depends on heatsink performance and ambient conditions. Always verify junction temperature using R_thJC = 2.5 °C/W in your IRL520 thermal model.

Does the IRL520 have a built-in body diode, and what are its key recovery characteristics?

Yes, the IRL520 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Its body diode has a forward voltage V_SD ≤ 2.5 V at I_S = 9.2 A and T_J = 25 °C, reverse recovery time t_rr of 130–190 ns, and recovered charge Q_rr of 0.83–1.0 μC. These values are measured at I_F = 9.2 A, dI/dt = 100 A/μs, and are critical for snubberless operation in non-synchronous buck or flyback converters. The IRL520 body diode is not optimized for ultrafast recovery but is rugged enough for moderate-frequency freewheeling.

Is the IRL520 pin-compatible with other TO-220AB N-channel MOSFETs like the IRF520?

No - while both IRL520 and IRF520 use TO-220AB packaging and share identical pinout (G-D-S), they differ fundamentally in gate threshold and R_DS(on). The IRF520 requires ≥10 V for full enhancement (V_GS(th) = 2–4 V), whereas the IRL520 is logic-level (V_GS(th) = 1.0–2.0 V) and specified at 4–5 V. Substituting IRL520 for IRF520 in existing 10 V gate drive circuits is safe, but replacing IRL520 with IRF520 in 3.3 V/5 V systems will cause incomplete turn-on and excessive conduction loss. Always validate gate drive voltage compliance before interchange.

What is the peak diode recovery dV/dt rating for the IRL520, and why does it matter?

The IRL520 is rated for peak diode recovery dV/dt of 5.5 V/ns, tested under defined conditions (V_GS = 10 V, I_SD ≤ 9.2 A, dI/dt ≤ 110 A/μs). This parameter quantifies the device's ability to withstand rapid voltage rise across the drain-source during body diode commutation without false turn-on (dv/dt-induced latch-up). Exceeding this rating risks spurious conduction and shoot-through in bridge configurations. Layout practices - including minimized loop inductance and proper gate grounding - are essential to maintain IRL520 reliability under high dV/dt stress.

Can the IRL520 be paralleled for higher current handling, and what design considerations apply?

Yes, the IRL520 is explicitly designed for ease of paralleling, as noted in its Features list. Key requirements include matched gate resistors (≤ 1 Ω difference), symmetrical PCB layout to equalize source inductance (L_S = 7.5 nH), and individual gate drive paths to prevent oscillation. Its positive R_DS(on) temperature coefficient promotes current sharing - R_DS(on) rises with temperature, naturally balancing thermal load. For parallel operation, ensure all devices are from the same batch and verify thermal coupling to avoid hot-spot formation. Derate total current by 15% for reliability in IRL520 multi-device arrays.