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Vishay Siliconix IRL530PBF

Part No.:
IRL530PBF
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixIRL530PBF.pdf
Description:
MOSFET N-CH 100V 15A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,175

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Product details

Overview

IRL530PBF from Vishay Siliconix is a logic-level N-channel Power MOSFET in TO-220AB package, rated for 100 V VDS, 15 A continuous drain current at TC = 25 °C, and 0.16 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation up to 15 A, and operates reliably from –55 °C to +175 °C - commonly used in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRL530PBF datasheet, IRL530PBF pinout, IRL530PBF application, or IRL530PBF equivalent, key selection considerations include its logic-level gate drive compatibility with 4–5 V microcontrollers, low RDS(on) enabling high-efficiency 12–24 V load switching, robust avalanche energy rating (290 mJ single-pulse), and TO-220AB thermal performance (RthJC = 1.7 °C/W).

Technical Context

The IRL530PBF employs a third-generation trench-gate silicon process optimized for low gate charge (Qg = 28 nC) and fast switching (tr = 100 ns, tf = 48 ns), enabling efficient operation in hard-switched SMPS topologies. Its body diode exhibits trr = 150–200 ns and Qrr = 0.93–1.4 μC, supporting moderate-frequency synchronous rectification or freewheeling roles.

Designed for logic-level drive, it delivers full enhancement at VGS = 4 V (RDS(on) ≤ 0.22 Ω) and maintains stable threshold voltage (VGS(th) = 1.0–2.0 V) across temperature. The device integrates a ruggedized structure qualified for repetitive avalanche (IAR = 15 A, EAR = 8.8 mJ) and dV/dt immunity (5.5 V/ns), suitable for inductive load switching without external snubbers.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 100 V - Supports 24–48 V bus systems with 2× safety margin against transients.
RDS(on) @ VGS = 5 V 0.16 Ω - Enables ≤2.4 W conduction loss at 12 A, reducing heatsink requirements.
Qg 28 nC - Low gate drive power demand; compatible with standard MCU GPIO or low-current drivers.
TJ Range –55 °C to +175 °C - Validated for under-hood automotive, industrial motor drives, and high-temp power stages.
EAS 290 mJ - Absorbs unclamped inductive energy during turn-off, eliminating need for external clamping in many solenoid/relay drivers.
ID Continuous @ TC = 100 °C 11 A - Sustains >10 A load current with modest heatsinking (e.g., 25 °C ambient + 25 K rise).
dV/dt Rating 5.5 V/ns - Resists false turn-on in noisy high-dV/dt environments like motor phase legs.

Pinout & Package

IRL530PBF uses the industry-standard TO-220AB package (3-pin, vertical mounting, isolated tab). The drain is internally connected to the metal tab for direct heatsink attachment and thermal path optimization.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control input Logic-level compatible; requires ≤28 nC charge to switch 15 A load; gate-source leakage < ±100 nA ensures stable off-state.
D (Drain) High-side or low-side power path Internally bonded to metal tab; electrically connected to heatsink - must be insulated if heatsink is grounded or at different potential.
S (Source) Reference node / return path Common connection point for gate drive reference and load return; body diode anode - enables bidirectional current flow in half-bridge freewheeling.

Key Features

Feature Design Value
Logic-level gate drive Full enhancement at VGS = 4 V (RDS(on) ≤ 0.22 Ω), eliminating need for gate driver ICs in 3.3 V/5 V MCU-controlled switches.
Repetitive avalanche rated Rated for 15 A repetitive avalanche current and 8.8 mJ energy - enables reliable operation in inductive switching without external protection.
Fast switching with low Qg 28 nC total gate charge and 100 ns rise time support >100 kHz PWM in DC-DC converters while minimizing switching losses.
High-temperature operation 175 °C maximum junction temperature and stable RDS(on) vs. temperature curve allow use in sealed enclosures or high-ambient environments.
RoHS-compliant lead-free Pb-free terminations per Directive 2002/95/EC; SnPb alternative (IRL530) available for legacy reflow processes.

Applications

DC-DC Converter High-Side Switch Brushed DC Motor H-Bridge Leg

Use Scenario: 24 V input, 5–10 A buck converter for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200 kHz PWM frequency.

Use Value: Low RDS(on) (0.16 Ω) and fast switching reduce conduction + switching losses to <1.8 W, enabling compact heatsinkless design.

Use Scenario: Bidirectional 12 V, 8 A brushed motor control in automated gate actuators.

IC Role / Device Role / Timing Role: Low-side leg switch in full H-bridge, commutated with dead-time control.

Use Value: Logic-level gate drive allows direct connection to 3.3 V FPGA I/O banks; body diode trr < 200 ns minimizes shoot-through risk during polarity reversal.

AC-DC Secondary-Side Rectifier Industrial Solenoid/Valve Driver

Use Scenario: 12 V/15 A output stage of offline flyback supply for HVAC controllers.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency above 85%.

Use Value: Qrr = 0.93–1.4 μC and low forward drop (VSD = 2.5 V) reduce reverse recovery loss and thermal stress vs. discrete diodes.

Use Scenario: 24 V, 5 A solenoid actuation in factory automation valves with PWM duty cycling.

IC Role / Device Role / Timing Role: Low-side switch controlling inductive load with active freewheeling via internal body diode.

Use Value: 290 mJ single-pulse avalanche energy safely clamps turn-off voltage spikes without external TVS, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP16NF06L 60 V VDS, 16 A ID, RDS(on) = 0.05 Ω @ VGS = 5 V, Qg = 16 nC - lower voltage rating but significantly lower on-resistance and gate charge. Not suitable for 100 V bus applications; better for 12–24 V high-current loads where lower conduction loss is critical. Select when operating below 60 V and prioritizing efficiency over voltage margin; verify avalanche capability is not required.
IRFZ44NPBF 55 V VDS, 49 A ID, RDS(on) = 0.028 Ω @ VGS = 10 V, but only 0.04 Ω @ VGS = 5 V - higher current rating but weaker logic-level drive and no specified avalanche rating. Lacks repetitive avalanche qualification; unsuitable for unclamped inductive switching without external protection. Prefer for high-current, low-voltage DC loads with robust gate drive; avoid in solenoid/motor drive where avalanche robustness is needed.

Compared with STP16NF06L and IRFZ44NPBF, the IRL530PBF uniquely balances 100 V rating, true logic-level operation down to 4 V, and certified repetitive avalanche capability - making it the only option among the three validated for 24–48 V industrial inductive switching without derating or external clamping.

Availability

IRL530PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and solenoid/valve control requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRL530PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for power, signal, and sensing applications.

The IRL530PBF belongs to Vishay's logic-level Power MOSFET family engineered for industrial and automotive-grade switching in 24–48 V systems - emphasizing ruggedness, ease of drive, and thermal stability without gate driver complexity.

FAQ

What is the maximum continuous drain current for IRL530PBF at 100 °C case temperature?

The IRL530PBF supports 11 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package (RthJC = 1.7 °C/W); actual usable current depends on heatsink performance and ambient conditions. Designers should verify junction temperature using Ptot = ID² × RDS(on) + switching losses and TJ = TC + Ptot × RthJC. The IRL530PBF remains within safe operating area up to 175 °C junction temperature.

Does IRL530PBF support logic-level gate drive from a 3.3 V microcontroller?

The IRL530PBF is explicitly characterized for logic-level operation, with RDS(on) guaranteed ≤ 0.22 Ω at VGS = 4.0 V and ID = 7.5 A. While 3.3 V is below the 4 V test condition, typical VGS(th) (1.0–2.0 V) and transfer characteristics show strong enhancement starting at ~3 V. In practice, the IRL530PBF delivers usable conduction (RDS(on) ≈ 0.3–0.4 Ω) at 3.3 V, but full 15 A capability requires ≥4 V drive. For 3.3 V systems, confirm load current and thermal margin in final design.

Is the metal tab of IRL530PBF electrically connected to any pin?

Yes - the metal tab of the IRL530PBF in TO-220AB package is internally connected to the Drain (D) terminal. This provides a low-inductance, low-thermal-resistance path to the heatsink but requires electrical isolation (e.g., mica washer + shoulder washer) if the heatsink is grounded or referenced to a different potential than the drain circuit. Failure to insulate may cause short circuits or ground loops. The IRL530PBF pinout confirms Drain as pin 2 (center lead) and tab connection in the Package Information section.

What is the body diode reverse recovery time (trr) of IRL530PBF, and how does it affect switching performance?

The IRL530PBF body diode exhibits trr = 150–200 ns at TJ = 25 °C, IF = 15 A, and dI/dt = 100 A/μs. This relatively fast recovery minimizes voltage overshoot and cross-conduction risk during hard-commutation in half-bridge or synchronous rectifier configurations. However, designers must account for Qrr = 0.93–1.4 μC in loss calculations and ensure adequate dead time - especially when paralleling devices or operating above 50 kHz. The IRL530PBF's trr is typical for logic-level MOSFETs of this voltage class.

Can IRL530PBF replace IRL530 in an existing design without layout changes?

Yes - the IRL530PBF is the RoHS-compliant, lead-free version of the IRL530, sharing identical TO-220AB package dimensions, pinout, and electrical specifications. Both parts have the same VDS, RDS(on), Qg, thermal resistance, and avalanche ratings. The only difference is termination material (Pb-free vs. SnPb), which affects soldering profile (peak temperature 300 °C for 10 s). No PCB or schematic changes are required when substituting IRL530PBF for IRL530, provided the assembly process accommodates lead-free reflow.

IRL530PBF Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Rds On (Max) @ Id, Vgs:
160mOhm @ 9A, 5V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 5 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
930 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
88W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

IRL530PBF FAQ

1.How can I place an order for IRL530PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL530PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL530PBF reliable?

The price and inventory of IRL530PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530PBF is usually 5 days.

3.What payment methods are accepted for IRL530PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL530PBF?

IRL530PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL530PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL530PBF?

For technical support, including IRL530PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530PBF requirements.

6.How does Aetrix verify that IRL530PBF is sourced from the original manufacturer or authorized distributors?

All IRL530PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530PBF meets industry standards.

7.What is the process for return or replacement of IRL530PBF?

All IRL530PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL530PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL530PBF part is unused and in its original packaging.

Return procedure for IRL530PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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