Vishay Siliconix IRL530PBF-BE3
- Part No.:
- IRL530PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL530PBF-BE3.pdf
- Description:
- MOSFET N-CH 100V 15A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:300
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Product details
Overview
IRL530PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 100 V VDS, 15 A continuous drain current at TC = 25 °C, and 0.16 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation, and operates up to 175 °C junction temperature - commonly used in DC-DC converters, motor drivers, and industrial power supplies.
For engineers reviewing the IRL530PBF-BE3 datasheet, IRL530PBF-BE3 pinout, IRL530PBF-BE3 application, or IRL530PBF-BE3 equivalent, key selection criteria include its logic-level gate drive (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V, 28 nC total gate charge, and TO-220AB thermal performance (RthJC = 1.7 °C/W).
Technical Context
This MOSFET employs third-generation silicon technology optimized for ruggedness and low conduction loss. Its dynamic dV/dt rating (5.5 V/ns) and unclamped inductive switching capability (EAS = 290 mJ) support reliable operation in hard-switched topologies.
The device integrates a fast-recovery body diode (trr = 150–200 ns, Qrr = 0.93–1.4 μC) and features low internal inductance (LD = 4.5 nH, LS = 7.5 nH), enabling high-speed switching with reduced ringing and EMI in PWM-driven loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports input rails up to 80 V DC with margin for transients in industrial power stages |
| RDS(on) @ VGS = 5 V | 0.16 Ω - enables <1.2 W conduction loss at 9 A, reducing heatsink requirements |
| Qg | 28 nC - determines gate driver current demand (~1.4 A peak for 20 ns rise time) |
| ID (continuous, TC = 25 °C) | 15 A - usable in medium-power SMPS or motor H-bridge legs without forced air |
| trr (body diode) | 150–200 ns - limits reverse recovery losses in synchronous rectification or freewheeling paths |
| TJ max | +175 °C - allows operation in sealed enclosures or high-ambient environments without derating |
| EAS | 290 mJ - withstands single-pulse inductive energy in relay/snubberless switching circuits |
Pinout & Package
IRL530PBF-BE3 uses the standard TO-220AB package: insulated tab, vertical mounting, 3-pin through-hole configuration with drain connected to the metal tab for direct heatsinking. Thermal resistance from junction to case is 1.7 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Logic-level compatible (VGS(th) ≤ 2.0 V); requires <100 nA leakage current drive |
| D (Drain) | High-side power output | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced |
| S (Source) | Power return / reference node | Serves as local ground for gate drive; source inductance (7.5 nH) impacts switching stability |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4–5 V, eliminating need for level-shifting in 5 V microcontroller-based systems |
| Repetitive avalanche rated | Rated for IAR = 15 A and EAR = 8.8 mJ, enabling robustness in inductive load switching without external clamping |
| Fast switching with low Qgd/Qg | Qgd = 14 nC (50% of Qg) minimizes Miller plateau duration, improving turn-off controllability |
| Low RthJC | 1.7 °C/W junction-to-case thermal resistance supports >70 W dissipation with moderate heatsinking |
| RoHS-compliant & halogen-free | IRL530PBF-BE3 meets JEDEC J-STD-609 Category 1 for halogen content (<900 ppm Cl + Br), suitable for green industrial designs |
Applications
| DC-DC Buck Converter | Brushed DC Motor Driver |
|---|---|
Use Scenario: 24 V input, 5–12 V output, 8 A load in industrial PLC power module. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz PWM frequency. Use Value: Low RDS(on) (0.16 Ω) reduces conduction loss by ~35% vs. standard 5 V gate MOSFETs; body diode trr < 200 ns prevents cross-conduction during dead-time. | Use Scenario: 36 V battery-powered conveyor control driving 10 A stall-current brushed motor. IC Role / Device Role / Timing Role: Low-side switch in half-H-bridge configuration with PWM speed control. Use Value: Logic-level gate ensures full enhancement from MCU GPIO; 175 °C rating sustains operation during intermittent overloads without thermal shutdown. |
| AC-DC Auxiliary Supply | LED Constant-Current Driver |
Use Scenario: 115/230 V AC offline flyback auxiliary winding regulator powering control ICs. IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) at 65 kHz. Use Value: Repetitive avalanche rating (EAR = 8.8 mJ) absorbs leakage inductance spikes without snubber, simplifying BOM and layout. | Use Scenario: 48 V bus dimmable LED string driver with analog/PWM dimming interface. IC Role / Device Role / Timing Role: High-side current sink switch modulating LED current via source-follower configuration. Use Value: Low gate threshold (1.0–2.0 V) enables precise current regulation using op-amp feedback; 15 A rating supports parallel strings up to 40 W. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF10 | VDS = 100 V, RDS(on) = 0.18 Ω @ VGS = 10 V, VGS(th) = 2–4 V - not logic-level at 4 V | Requires 10 V gate drive; unsuitable for 3.3/5 V MCU direct drive | Select IRL530PBF-BE3 when gate voltage is limited to ≤5 V; STP16NF10 only if 10 V rail available |
| IRF530NPBF | VDS = 100 V, RDS(on) = 0.16 Ω @ VGS = 10 V, VGS(th) = 2–4 V - higher threshold, slower switching (Qg = 32 nC) | Higher gate charge increases driver loss; less suitable for high-frequency (>300 kHz) operation | IRL530PBF-BE3 preferred for efficiency-critical or space-constrained designs needing low gate drive voltage |
Compared with STP16NF10 and IRF530NPBF, IRL530PBF-BE3 delivers lower gate drive voltage dependency, faster switching due to lower Qg, and superior thermal margin - making it optimal for compact, logic-level-controlled power stages where layout area and drive simplicity are critical.
Availability
IRL530PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and LED drivers requiring stable component supply across industrial production cycles.
Supply support for IRL530PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRL530PBF-BE3 belongs to Vishay's logic-level power MOSFET family designed specifically for high-efficiency, low-voltage-gate-drive power conversion in industrial, automotive, and consumer systems.
FAQ
What is the maximum continuous drain current for IRL530PBF-BE3 at 100 °C case temperature?
The IRL530PBF-BE3 supports 11 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink ambient exceeds 50 °C or airflow is restricted. Designers should verify junction temperature using RthJC = 1.7 °C/W and actual power dissipation in IRL530PBF-BE3.
Does IRL530PBF-BE3 have avalanche capability, and how is it rated?
Yes, IRL530PBF-BE3 is repetitively avalanche rated: IAR = 15 A and EAR = 8.8 mJ under specified test conditions (TJ ≤ 175 °C, pulse width limited). It also supports single-pulse avalanche energy of 290 mJ. These ratings allow safe operation in inductive switching without external protection, provided layout minimizes stray inductance as outlined in the IRL530PBF-BE3 application notes.
Is IRL530PBF-BE3 suitable for 3.3 V microcontroller gate drive?
IRL530PBF-BE3 has a gate threshold voltage range of 1.0–2.0 V and is fully enhanced at VGS = 4 V (RDS(on) = 0.22 Ω) and VGS = 5 V (RDS(on) = 0.16 Ω). While 3.3 V is below full enhancement, it delivers usable RDS(on) (~0.35 Ω typ.) - acceptable for low-duty-cycle or low-current applications. For robust 3.3 V drive, verify thermal margin and consider gate boosting; IRL530PBF-BE3 is optimized for 4–5 V operation.
What is the body diode forward voltage of IRL530PBF-BE3, and how does it affect freewheeling performance?
The body diode forward voltage (VSD) of IRL530PBF-BE3 is 2.5 V maximum at IS = 15 A and TJ = 25 °C. Its reverse recovery time (trr) is 150–200 ns, with Qrr = 0.93–1.4 μC. These values indicate moderate conduction loss but relatively fast recovery - suitable for non-synchronous buck or flyback freewheeling where efficiency loss is acceptable, though not ideal for high-frequency synchronous rectification without additional optimization of IRL530PBF-BE3 layout.
How does the TO-220AB package of IRL530PBF-BE3 impact thermal design?
The TO-220AB package of IRL530PBF-BE3 provides RthJC = 1.7 °C/W (junction-to-case) and RthJA = 62 °C/W (junction-to-ambient, no heatsink). Effective thermal design requires mounting the drain-connected tab to a heatsink with thermal grease (RthCS = 0.50 °C/W typical). Without heatsinking, IRL530PBF-BE3 is limited to ~1.4 W dissipation; with a 10 °C/W heatsink, it supports >70 W - confirming its suitability for medium-power industrial applications.
IRL530PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL530PBF-BE3 FAQ
1.How can I place an order for IRL530PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL530PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL530PBF-BE3 reliable?
The price and inventory of IRL530PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRL530PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL530PBF-BE3?
IRL530PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL530PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL530PBF-BE3?
For technical support, including IRL530PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530PBF-BE3 requirements.
6.How does Aetrix verify that IRL530PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRL530PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRL530PBF-BE3?
All IRL530PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL530PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL530PBF-BE3 part is unused and in its original packaging.
Return procedure for IRL530PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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