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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL530S

Name: IRL530S
Brand: Vishay Siliconix
SKU: IRL530S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL530S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL530S.pdf

Description:: MOSFET N-CH 100V 15A D2PAK

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Product details

Overview

IRL530S from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V V_DS, 15 A continuous drain current at T_C = 25 °C, and R_DS(on) = 0.16 Ω at V_GS = 5 V. It supports repetitive avalanche operation up to 15 A and operates up to 175 °C junction temperature, making it suitable for high-current DC motor control and industrial power switching.

For engineers reviewing the IRL530S datasheet, IRL530S pinout, IRL530S application, or IRL530S equivalent, this page delivers verified electrical parameters, thermal derating behavior, gate charge profile, body diode recovery characteristics, and surface-mount thermal management guidance specific to the IRL530S D2PAK variant.

Technical Context

This MOSFET employs third-generation silicon technology optimized for low R_DS(on) and fast switching with logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V). Its dynamic dV/dt rating of 5.5 V/ns and unclamped inductive switching capability (E_AS = 290 mJ) support robust operation in hard-switched converters and motor drives.

The device integrates a rugged body diode with t_rr = 150–200 ns and Q_rr = 0.93–1.4 μC at T_J = 25 °C, enabling reliable freewheeling in synchronous rectification and H-bridge topologies without external snubbing under defined dI/dt limits (≤140 A/μs).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; defines use in ≤100 V DC bus systems.
R_DS(on) @ V_GS = 5 V	0.16 Ω - Confirmed on-resistance at logic-level gate drive; enables direct microcontroller interface without level-shifting.
Q_g	28 nC - Total gate charge determining drive strength requirement; impacts switching loss and gate driver selection.
I_D (continuous, T_C = 25 °C)	15 A - Thermal-limited current with heatsink; requires ≥1.7 °C/W junction-to-case path for full rating.
E_AS	290 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without clamping.
T_J max	+175 °C - Maximum operating junction temperature; supports high-ambient industrial environments with appropriate PCB copper area.
Package	D2PAK (TO-263) - Surface-mount power package with exposed drain tab; requires thermal pad layout per Vishay AN826 guidelines.

Pinout & Package

D2PAK (TO-263) package with 3 terminals: Drain (tab), Source (pin 1), Gate (pin 2). The exposed drain tab serves as primary thermal and electrical connection point and must be soldered to a large copper pour for thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal and thermal path	Electrically connected to package backside; must be thermally anchored to PCB ground plane or heatsink for R_thJC = 1.7 °C/W performance.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance source connection critical for stable switching; internal L_S = 7.5 nH affects gate loop stability.
Gate (Pin 2)	Control input for channel conduction	Logic-compatible threshold (1.0–2.0 V); requires <3.8 nC gate-source charge for full enhancement at V_GS = 5 V.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4–5 V, eliminating need for gate driver ICs in 3.3 V/5 V MCU-controlled switches.
Repetitive avalanche rated	Rated for 15 A repetitive avalanche current (I_AR) and 8.8 mJ energy (E_AR), enabling reliable operation in inductive load switching without external protection.
Dynamic dV/dt immunity	Specified dV/dt = 5.5 V/ns - prevents false turn-on during high-slew-rate voltage transients in half-bridge configurations.
High-temperature operation	175 °C maximum junction temperature supports deployment in sealed enclosures or high-ambient industrial settings without derating penalties.
Surface-mount packaging	D2PAK footprint enables automated assembly while delivering TO-220-level power handling (88 W at T_C = 25 °C) in compact form factor.

Applications

DC Motor Control	Industrial Power Supplies
Use Scenario: Bidirectional 24–48 V brushed DC motor drive in factory automation actuators. IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge; handles 15 A stall current with minimal conduction loss. Use Value: 0.16 Ω R_DS(on) reduces I²R losses by >30% vs. standard 5 V gate MOSFETs, improving thermal margin and efficiency at full load.	Use Scenario: Primary-side switch in 100 W offline flyback or forward converter for industrial PLC power modules. IC Role / Device Role / Timing Role: Main power switch operating at ≤100 kHz with unclamped inductive turn-off stress. Use Value: 290 mJ single-pulse avalanche energy absorbs leakage inductance spikes without snubber circuitry, simplifying BOM and layout.
LED Constant-Current Drivers	Automotive Body Control Modules
Use Scenario: High-current PWM dimming stage for architectural LED arrays (e.g., 12 V, 10 A strings). IC Role / Device Role / Timing Role: Low-side current sink switch modulated at 1–20 kHz to regulate average LED current. Use Value: Fast 100 ns rise time and 48 ns fall time enable precise duty-cycle control with minimal dead-time distortion and EMI.	Use Scenario: Load switch for 12 V accessory circuits (e.g., window lift, seat adjust) in automotive BCMs meeting AEC-Q101 stress requirements. IC Role / Device Role / Timing Role: Protected high-current switch with integrated body diode for inductive load freewheeling. Use Value: Body diode t_rr = 150–200 ns and Q_rr = 0.93–1.4 μC minimize voltage overshoot during relay/coil turn-off, reducing clamp diode stress.

DC Motor Control

Industrial Power Supplies

Use Scenario: Bidirectional 24–48 V brushed DC motor drive in factory automation actuators.

IC Role / Device Role / Timing Role: High-side or low-side switching element in H-bridge; handles 15 A stall current with minimal conduction loss.

Use Value: 0.16 Ω R_DS(on) reduces I²R losses by >30% vs. standard 5 V gate MOSFETs, improving thermal margin and efficiency at full load.

Use Scenario: Primary-side switch in 100 W offline flyback or forward converter for industrial PLC power modules.

IC Role / Device Role / Timing Role: Main power switch operating at ≤100 kHz with unclamped inductive turn-off stress.

Use Value: 290 mJ single-pulse avalanche energy absorbs leakage inductance spikes without snubber circuitry, simplifying BOM and layout.

LED Constant-Current Drivers

Automotive Body Control Modules

Use Scenario: High-current PWM dimming stage for architectural LED arrays (e.g., 12 V, 10 A strings).

IC Role / Device Role / Timing Role: Low-side current sink switch modulated at 1–20 kHz to regulate average LED current.

Use Value: Fast 100 ns rise time and 48 ns fall time enable precise duty-cycle control with minimal dead-time distortion and EMI.

Use Scenario: Load switch for 12 V accessory circuits (e.g., window lift, seat adjust) in automotive BCMs meeting AEC-Q101 stress requirements.

IC Role / Device Role / Timing Role: Protected high-current switch with integrated body diode for inductive load freewheeling.

Use Value: Body diode t_rr = 150–200 ns and Q_rr = 0.93–1.4 μC minimize voltage overshoot during relay/coil turn-off, reducing clamp diode stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF06L	V_DS = 60 V, R_DS(on) = 0.09 Ω @ 5 V, Q_g = 25 nC, TO-220 package	Limited to ≤60 V systems; lacks 100 V rating and avalanche energy spec of IRL530S	Select when lower voltage, lower R_DS(on), and through-hole mounting are acceptable trade-offs.
IRF3710PBF	V_DS = 100 V, R_DS(on) = 0.056 Ω @ 10 V, Q_g = 120 nC, TO-220 package, non-logic-level (V_GS(th) = 2–4 V)	Requires 10 V gate drive; higher Q_g increases switching loss; no specified avalanche rating	Select only if gate drive is ≥10 V and thermal design accommodates higher conduction loss at partial gate voltage.

Compared with STP16NF06L and IRF3710PBF, the IRL530S uniquely combines 100 V rating, logic-level drive, and documented repetitive avalanche capability in surface-mount D2PAK-enabling compact, robust, and controller-friendly designs where voltage margin, thermal density, and transient resilience are critical.

Availability

IRL530S is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, LED driver circuits, and automotive body electronics requiring stable component supply across production lifecycles.

Supply support for IRL530S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing applications.

The IRL530S belongs to Vishay's logic-level power MOSFET product line, engineered for high-current switching in space-constrained, thermally demanding applications where direct microcontroller interfacing and rugged transient handling are required.

FAQ

What is the maximum continuous drain current for the IRL530S at 100 °C case temperature?

The IRL530S supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations and ensures safe operation within the 175 °C maximum junction temperature limit. Designers must verify PCB copper area and airflow to sustain this current in real-world conditions. The IRL530S datasheet confirms this value under standardized test conditions using a 1" square FR-4 board.

Does the IRL530S require a gate driver IC when used with a 3.3 V microcontroller?

No, the IRL530S does not require an external gate driver IC with a 3.3 V microcontroller. Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) and guaranteed R_DS(on) = 0.22 Ω at V_GS = 4.0 V allow full enhancement from 3.3 V outputs. However, gate resistance should be minimized (<10 Ω) to manage 28 nC total gate charge and ensure fast switching. The IRL530S is explicitly designed for such direct-drive scenarios.

What is the thermal resistance from junction to ambient for the IRL530S in standard PCB mount?

The IRL530S has a maximum junction-to-ambient thermal resistance (R_thJA) of 62 °C/W when mounted on a standard 1" square FR-4 PCB, per the Thermal Resistance Ratings table. With optimized 2 oz copper and thermal vias, R_thJA improves to 40 °C/W. For high-power operation, the exposed drain tab must connect directly to a heatsink or large copper pour to leverage the 1.7 °C/W junction-to-case path. This data applies specifically to the IRL530S D2PAK variant.

Is the IRL530S RoHS-compliant and halogen-free?

Yes, the IRL530S ordering variant IRL530STRRPbFa is lead (Pb)-free and halogen-free, as confirmed in the Ordering Information section of the Vishay datasheet (Document Number: 91342, Rev. D). It complies with JEDEC standards for green packaging and meets Vishay's material categorization per doc?99912. The "PbF" suffix denotes lead-free termination, and "a" indicates halogen-free construction. This applies exclusively to the IRL530S part number as shipped by Vishay.

How does the body diode performance of the IRL530S compare to standard rectifiers in freewheeling applications?

The IRL530S body diode delivers t_rr = 150–200 ns and Q_rr = 0.93–1.4 μC at T_J = 25 °C, enabling efficient freewheeling in H-bridges without external Schottky diodes. While slower than dedicated ultrafast rectifiers, its parameters are optimized for synchronous rectification in medium-frequency SMPS and motor drives. Unlike discrete diodes, the IRL530S body diode shares thermal mass with the MOSFET die, ensuring matched temperature tracking. This behavior is measured and documented for the IRL530S in the official datasheet.

IRL530S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 9A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL530S FAQ

1.How can I place an order for IRL530S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL530S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL530S reliable?

The price and inventory of IRL530S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530S is usually 5 days.

3.What payment methods are accepted for IRL530S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL530S?

IRL530S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL530S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL530S?

For technical support, including IRL530S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530S requirements.

6.How does Aetrix verify that IRL530S is sourced from the original manufacturer or authorized distributors?

All IRL530S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530S meets industry standards.

7.What is the process for return or replacement of IRL530S?

All IRL530S units undergo pre-shipment inspection (PSI). If there is an issue with IRL530S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL530S part is unused and in its original packaging.

Return procedure for IRL530S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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