Vishay Siliconix IRL530STRL
- Part No.:
- IRL530STRL
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL530STRL.pdf
- Description:
- MOSFET N-CH 100V 15A D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRL530STRL from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V VDS, 15 A continuous drain current at TC = 25 °C, and RDS(on) = 0.16 Ω at VGS = 5 V. It supports repetitive avalanche operation, features dynamic dV/dt rating up to 5.5 V/ns, and operates up to 175 °C - ideal for high-current DC-DC converter primary-side switches and motor drive half-bridges.
For engineers reviewing the IRL530STRL datasheet, IRL530STRL pinout, IRL530STRL application, or IRL530STRL equivalent, key selection criteria include its logic-level gate drive compatibility with 4–5 V microcontrollers, low RDS(on) enabling high-efficiency switching at moderate currents, robust avalanche energy rating (EAS = 290 mJ), and surface-mount D2PAK thermal performance (RthJC = 1.7 °C/W).
Technical Context
This device belongs to Vishay's third-generation power MOSFET family optimized for fast switching and ruggedized design. Its gate threshold voltage (VGS(th) = 1.0–2.0 V) ensures reliable turn-on with standard logic-level drivers, while the low input capacitance (Ciss = 930 pF) and gate charge (Qg = 28 nC) support efficient high-frequency PWM control.
The integrated body diode exhibits trr = 150–200 ns and Qrr = 0.93–1.4 μC, making it suitable for synchronous rectification and freewheeling in inductive loads. Thermal design is enabled by its D2PAK package's low junction-to-case resistance and PCB-mount power dissipation of 3.7 W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V industrial bus and 24 V automotive systems with margin |
| RDS(on) @ VGS = 5 V | 0.16 Ω - enables ≤2.25 W conduction loss at 12 A DC, reducing heatsink requirements |
| ID (continuous, TC = 25 °C) | 15 A - sufficient for 200–300 W load switching in compact SMT designs |
| Qg | 28 nC - determines gate driver current demand (~1.4 A peak for 20 ns rise time) |
| EAS | 290 mJ - withstands unclamped inductive energy in motor commutation without failure |
| TJ max | 175 °C - allows operation in sealed enclosures or high-ambient environments |
| dV/dt rating | 5.5 V/ns - suppresses false turn-on in noisy high-dI/dt applications like H-bridge drives |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal conduction and mechanical anchoring. Three terminals: Gate (G), Drain (D), Source (S). Drain tab is electrically connected to the drain terminal and must be soldered to a large copper pour for optimal thermal performance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Logic-level compatible; requires ≤2.0 V VGS(th) for turn-on; driven directly by MCU GPIO or dedicated gate driver |
| D | Drain (high-side switch node) | Connected to exposed metal tab; carries full load current and must be thermally coupled to PCB ground plane or heatsink |
| S | Source (return path) | Reference node for gate drive; forms low-impedance return path for load current and body diode conduction |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = 4 V, enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting |
| Repetitive avalanche rated | Rated for IAR = 15 A and EAR = 8.8 mJ, allowing safe operation under transient overloads in motor control |
| Dynamic dV/dt immunity | 5.5 V/ns rating prevents spurious turn-on during fast voltage transients in bridge configurations |
| High-temperature operation | 175 °C maximum junction temperature supports use in sealed industrial enclosures and engine-bay proximity |
| Low RDS(on) at low VGS | 0.22 Ω at VGS = 4 V ensures minimal conduction loss even with marginal gate drive voltage |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Half-Bridge |
|---|---|
Use Scenario: Step-down (buck) converter operating at 100–500 kHz in industrial power supplies. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into output inductor. Use Value: Low Qg (28 nC) and RDS(on) (0.16 Ω) minimize switching and conduction losses, improving efficiency above 92% at 12 A. | Use Scenario: Bidirectional 24 V brushed motor control in automated machinery. IC Role / Device Role / Timing Role: One leg of an H-bridge, switching motor current direction with PWM duty cycle. Use Value: Repetitive avalanche rating (IAR = 15 A) safely clamps inductive kickback during PWM off-time, eliminating need for external snubbers. |
| LED Driver High-Side Switch | Power Supply OR'ing Circuit |
Use Scenario: Constant-current LED string driver with dimming via PWM in architectural lighting. IC Role / Device Role / Timing Role: High-side current regulator switch modulating LED current at 1–10 kHz. Use Value: Logic-level gate enables direct PWM from 3.3 V MCU; low RDS(on) minimizes voltage drop across switch, preserving headroom for LED forward voltage. | Use Scenario: Redundant 48 V power supply OR'ing in telecom shelf systems. IC Role / Device Role / Timing Role: Ideal diode replacement in active OR'ing configuration to reduce forward drop and heat. Use Value: Body diode VSD = 2.5 V at 15 A is lower than Schottky alternatives at same current density; low RDS(on) further reduces conduction loss vs. discrete diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF530NPBF | Higher VGS(th) (2–4 V), higher RDS(on) (0.19 Ω @ 5 V), not logic-level rated | Requires ≥10 V gate drive; unsuitable for 3.3 V MCU direct drive | Select IRL530STRL when gate drive voltage is limited to ≤5 V and low on-resistance is critical |
| STP16NF10 | Same VDS (100 V), slightly higher RDS(on) (0.18 Ω @ 5 V), lower Qg (18 nC) | Better switching speed but reduced avalanche ruggedness (EAS = 170 mJ vs. 290 mJ) | Prefer IRL530STRL in inductive load applications requiring high unclamped energy handling |
Compared with IRF530NPBF and STP16NF10, the IRL530STRL delivers superior logic-level drivability, lower conduction loss, and highest single-pulse avalanche energy - making it the preferred choice for space-constrained, thermally demanding, and inductively loaded 100 V switching applications where gate voltage headroom is limited.
Availability
IRL530STRL is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and LED lighting systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRL530STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.
The IRL530STRL belongs to Vishay's logic-level power MOSFET product line, engineered for high-current, surface-mount switching in industrial automation, power conversion, and motor control where low gate drive voltage and avalanche tolerance are essential.
FAQ
What is the maximum continuous drain current for IRL530STRL at 100 °C case temperature?
The IRL530STRL supports 11 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual PCB layout and ambient conditions. Designers should reference the "Maximum Drain Current vs. Case Temperature" curve (Fig. 8) to confirm safe operating area for their specific thermal environment. The IRL530STRL maintains RDS(on) stability up to 175 °C junction temperature.
Does IRL530STRL have a built-in body diode, and what are its key parameters?
Yes, the IRL530STRL integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key parameters include VSD = 2.5 V at TJ = 25 °C and IS = 15 A, reverse recovery time trr = 150–200 ns, and reverse recovery charge Qrr = 0.93–1.4 μC. These values are measured under standardized conditions (IF = 15 A, dI/dt = 100 A/μs) and define its suitability for freewheeling and synchronous rectification. The IRL530STRL body diode is not optimized for ultrafast recovery but provides robust performance in typical motor and converter applications.
Is IRL530STRL RoHS-compliant and halogen-free?
Yes, the IRL530STRL is RoHS-compliant and halogen-free, as confirmed in the Vishay datasheet (S21-0932-Rev. D) and ordering information. It carries the "-GE3" suffix in lead-free/halogen-free variants (e.g., SiHL530STRR-GE3), and the IRL530STRL itself is manufactured to meet JEDEC J-STD-020 moisture sensitivity and RoHS Directive 2011/65/EU requirements. Material compliance documentation is accessible via Vishay's website using document number 91342.
What is the thermal resistance from junction to case (RthJC) for IRL530STRL?
The maximum junction-to-case (drain) thermal resistance RthJC for IRL530STRL is 1.7 °C/W, as stated in the Thermal Resistance Ratings table. This value applies when the device is mounted with proper solder coverage on a PCB and assumes the drain tab is the primary thermal path. Effective heatsinking requires a low-thermal-resistance interface (e.g., thermal pad or paste) between the exposed drain tab and the PCB copper pour or external heatsink. The IRL530STRL's D2PAK package enables this low RthJC due to its large metal tab area and short internal thermal path.
Can IRL530STRL be used in avalanche mode, and what are its ratings?
Yes, the IRL530STRL is explicitly rated for repetitive avalanche operation per its datasheet. It supports repetitive avalanche current IAR = 15 A and repetitive avalanche energy EAR = 8.8 mJ, with single-pulse avalanche energy EAS = 290 mJ. These ratings assume pulse width and duty cycle limitations defined in the datasheet notes (e.g., pulse width ≤ 300 μs, duty cycle ≤ 2 %). The IRL530STRL's ruggedized die design and specified test conditions (VDD = 25 V, L = 1.9 mH, Rg = 25 Ω) validate its use in inductive switching applications such as motor drives without external protection.
IRL530STRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 9A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 930 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL530STRL FAQ
1.How can I place an order for IRL530STRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL530STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL530STRL reliable?
The price and inventory of IRL530STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530STRL is usually 5 days.
3.What payment methods are accepted for IRL530STRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530STRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL530STRL?
IRL530STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL530STRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL530STRL?
For technical support, including IRL530STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530STRL requirements.
6.How does Aetrix verify that IRL530STRL is sourced from the original manufacturer or authorized distributors?
All IRL530STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530STRL meets industry standards.
7.What is the process for return or replacement of IRL530STRL?
All IRL530STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRL530STRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL530STRL part is unused and in its original packaging.
Return procedure for IRL530STRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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