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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL530STRRPBF

Name: IRL530STRRPBF
Brand: Vishay Siliconix
SKU: IRL530STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL530STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL530STRRPBF.pdf

Description:: MOSFET N-CH 100V 15A D2PAK

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Product details

Overview

IRL530STRRPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V V_DS, 15 A continuous drain current at T_C = 25 °C, and 0.16 Ω R_DS(on) at V_GS = 5 V. It supports fast switching with 28 nC total gate charge and operates up to 175 °C junction temperature, making it suitable for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL530STRRPBF datasheet, IRL530STRRPBF pinout, IRL530STRRPBF application, or IRL530STRRPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, avalanche capability, body diode recovery metrics, and surface-mount thermal management guidance specific to the D2PAK footprint.

Technical Context

This MOSFET belongs to Vishay's third-generation power MOSFET family optimized for low R_DS(on) and fast switching in logic-level gate-drive systems. Its design integrates ruggedized die construction with dynamic dV/dt rating and repetitive avalanche capability (E_AS = 290 mJ, I_AR = 15 A), enabling reliable operation under inductive load switching transients.

The device features a monolithic N-channel enhancement-mode structure with integral body diode, characterized by 2.5 V V_SD at 15 A and 150–200 ns reverse recovery time. Gate drive compatibility extends down to 4 V (R_DS(on) = 0.22 Ω), supporting direct interface with microcontrollers and low-voltage PWM controllers without level-shifting circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before breakdown; defines use in ≤100 V bus applications like 48 V industrial supplies.
R_DS(on) @ V_GS = 5 V	0.16 Ω - Confirmed on-resistance at standard logic-level gate drive; determines conduction loss in high-current paths.
Q_g	28 nC - Total gate charge required for full turn-on; directly impacts switching loss and driver sizing in PWM circuits.
I_D (continuous, T_C = 25 °C)	15 A - Sustained current capability with heatsink; requires ≥1.7 °C/W junction-to-case thermal path for safe operation.
E_AS	290 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching without failure in motor control H-bridges.
T_J max	+175 °C - Maximum operating junction temperature; allows deployment in sealed enclosures or high-ambient environments.
V_GS(th)	1.0–2.0 V - Gate threshold range confirming true logic-level operation; ensures turn-on with 3.3 V or 5 V MCU GPIOs.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad on underside; 3-terminal configuration optimized for PCB heat spreading and high-current routing. Mounting requires 1" square FR-4 copper area for rated 3.7 W PCB-mount power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Tab / Pin 2 (Drain)	High-current output node / heat sink interface	Electrically connected to internal die drain and thermal pad; must be soldered to large copper pour for thermal and current handling.
Pin 1 (Gate)	Control input	Low-impedance capacitive node requiring <28 nC charge; sensitive to ringing-requires local gate resistor (e.g., 12 Ω) and short trace routing.
Pin 3 (Source)	Reference return path	Carries full load current and serves as gate drive reference; layout must minimize source inductance (LS = 7.5 nH) to avoid shoot-through risk.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4 V (R_DS(on) ≤ 0.22 Ω), eliminating need for gate drivers in 3.3 V/5 V microcontroller interfaces.
Repetitive avalanche rated	Rated for 15 A repetitive avalanche current and 8.8 mJ energy, enabling robust operation in inductive switching without external snubbers.
D2PAK thermal performance	1.7 °C/W junction-to-case resistance supports 88 W power dissipation with heatsink-highest surface-mount power density in its class.
Dynamic dV/dt immunity	Rated for 5.5 V/ns peak diode recovery dV/dt, reducing risk of false turn-on during high-speed commutation in bridge topologies.
RoHS-compliant, halogen-free	Lead (Pb)-free and halogen-free construction per Vishay specification, meeting IPC/JEDEC J-STD-609A Class 1 requirements.

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Half-Bridge
Use Scenario: High-efficiency 48 V input buck converter delivering 12 V/10 A to embedded control modules. IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 200 kHz with 5 V gate drive from PWM controller. Use Value: 0.16 Ω R_DS(on) minimizes conduction loss (<1.9 W at 10 A), while 28 nC Q_g enables efficient high-frequency switching with low driver power.	Use Scenario: Bidirectional 24 V brushed motor drive in automated gate actuator with stall detection. IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, controlled by microcontroller GPIO with dead-time management. Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V, and 290 mJ E_AS withstands inductive kickback during rapid direction reversal.
LED Constant-Current Driver	Industrial Solenoid Control
Use Scenario: 100 W high-bay LED fixture using buck-based constant-current regulation with analog dimming. IC Role / Device Role / Timing Role: Power switch modulating LED string current at 1–10 kHz PWM frequency. Use Value: 175 °C T_J(max) allows operation in thermally constrained enclosed fixtures, while low Q_gd/Q_gs ratio (14/3.8) improves controllability during dimming transitions.	Use Scenario: 24 V solenoid valve driver in HVAC control panel with surge suppression and status feedback. IC Role / Device Role / Timing Role: High-side or low-side switching element activated by PLC output, managing 1.2 A steady-state coil current. Use Value: Repetitive avalanche rating handles back-EMF without clamping diodes; 0.22 Ω R_DS(on) at 4 V ensures reliable turn-on even with aged PLC outputs.

DC-DC Converter Primary Switch

Brushed DC Motor Half-Bridge

Use Scenario: High-efficiency 48 V input buck converter delivering 12 V/10 A to embedded control modules.

IC Role / Device Role / Timing Role: Main synchronous rectifier switch operating at 200 kHz with 5 V gate drive from PWM controller.

Use Value: 0.16 Ω R_DS(on) minimizes conduction loss (<1.9 W at 10 A), while 28 nC Q_g enables efficient high-frequency switching with low driver power.

Use Scenario: Bidirectional 24 V brushed motor drive in automated gate actuator with stall detection.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, controlled by microcontroller GPIO with dead-time management.

Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V, and 290 mJ E_AS withstands inductive kickback during rapid direction reversal.

LED Constant-Current Driver

Industrial Solenoid Control

Use Scenario: 100 W high-bay LED fixture using buck-based constant-current regulation with analog dimming.

IC Role / Device Role / Timing Role: Power switch modulating LED string current at 1–10 kHz PWM frequency.

Use Value: 175 °C T_J(max) allows operation in thermally constrained enclosed fixtures, while low Q_gd/Q_gs ratio (14/3.8) improves controllability during dimming transitions.

Use Scenario: 24 V solenoid valve driver in HVAC control panel with surge suppression and status feedback.

IC Role / Device Role / Timing Role: High-side or low-side switching element activated by PLC output, managing 1.2 A steady-state coil current.

Use Value: Repetitive avalanche rating handles back-EMF without clamping diodes; 0.22 Ω R_DS(on) at 4 V ensures reliable turn-on even with aged PLC outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF530NPBF	Higher R_DS(on) (0.19 Ω @ 5 V), higher V_GS(th) (2–4 V), TO-220 package	Requires heatsink mounting; less suitable for compact SMT designs or 3.3 V drive	Choose when through-hole assembly is preferred and gate drive voltage exceeds 4.5 V.
STP16NF10	Same V_DS (100 V), lower R_DS(on) (0.13 Ω), but higher Q_g (45 nC), TO-220 package	Higher switching loss at >100 kHz; not logic-level (V_GS(th) = 2–4 V)	Prefer for lower conduction loss in low-frequency, high-current linear applications where gate drive is ≥5 V.

Compared with IRL530STRRPBF, IRF530NPBF offers lower cost but sacrifices SMT compatibility and 3.3 V drive margin, while STP16NF10 reduces conduction loss yet increases driver complexity and thermal sensitivity due to higher Q_g and non-logic-level threshold.

Availability

IRL530STRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power conversion, and LED lighting systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRL530STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRL530STRRPBF belongs to Vishay's logic-level power MOSFET product line engineered for high-current, surface-mount switching in space-constrained power systems where low gate drive voltage and rugged avalanche performance are critical.

FAQ

What is the maximum continuous drain current for IRL530STRRPBF at 100 °C case temperature?

The IRL530STRRPBF supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derated value reflects thermal limitations of the D2PAK package and must be validated against actual board layout and ambient conditions. Designers should consult the "Maximum Drain Current vs. Case Temperature" curve (Fig. 8) to confirm safe operating area under real thermal loads.

Does IRL530STRRPBF have an integrated body diode, and what are its key recovery characteristics?

Yes, IRL530STRRPBF includes an integral body diode with typical V_SD = 2.5 V at 15 A and T_J = 25 °C. Its reverse recovery time (t_rr) is 150–200 ns under IF = 15 A, dI/dt = 100 A/μs conditions, and Q_rr is 0.93–1.4 μC. These values enable use in freewheeling paths of synchronous rectifiers and half-bridge topologies without external diodes in many cases.

Can IRL530STRRPBF be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes, IRL530STRRPBF is explicitly designed as a logic-level MOSFET with V_GS(th) ranging from 1.0 V to 2.0 V and R_DS(on) = 0.22 Ω at V_GS = 4.0 V. A 3.3 V GPIO can fully enhance the device, though designers should verify gate charge (28 nC) and layout parasitics to ensure clean switching edges and avoid shoot-through in bridge configurations.

What is the thermal resistance from junction to ambient for IRL530STRRPBF in standard PCB mount?

In standard PCB mount (1" square FR-4), the IRL530STRRPBF has a maximum junction-to-ambient thermal resistance (R_thJA) of 40 °C/W, enabling 3.7 W power dissipation at T_A = 25 °C. This value assumes optimal copper area and via placement beneath the thermal pad; actual performance depends on board stack-up, copper weight, and airflow.

Is IRL530STRRPBF suitable for avalanche-prone applications such as relay or solenoid switching?

Yes, IRL530STRRPBF is repetitively avalanche-rated with I_AR = 15 A and E_AR = 8.8 mJ, and single-pulse rated for E_AS = 290 mJ. These specifications make it suitable for driving inductive loads like relays and solenoids without external protection, provided pulse width and duty cycle remain within limits defined in Figure 11 and the datasheet notes.

IRL530STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 9A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.7W (Ta), 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL530STRRPBF FAQ

1.How can I place an order for IRL530STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL530STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL530STRRPBF reliable?

The price and inventory of IRL530STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL530STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL530STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL530STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL530STRRPBF?

IRL530STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL530STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL530STRRPBF?

For technical support, including IRL530STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL530STRRPBF requirements.

6.How does Aetrix verify that IRL530STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL530STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL530STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL530STRRPBF?

All IRL530STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL530STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL530STRRPBF part is unused and in its original packaging.

Return procedure for IRL530STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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