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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL540PBF-BE3

Name: IRL540PBF-BE3
Brand: Vishay Siliconix
SKU: IRL540PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL540PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL540PBF-BE3.pdf

Description:: MOSFET N-CH 100V 28A TO220AB

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Product details

Overview

IRL540PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 100 V V_DS, 28 A continuous drain current at T_C = 25 °C, and 0.077 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and 175 °C junction temperature - ideal for DC-DC converter high-side switches and motor drive half-bridges.

For engineers reviewing the IRL540PBF-BE3 datasheet, IRL540PBF-BE3 pinout, IRL540PBF-BE3 application, or IRL540PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 440 mJ), thermal resistance (R_thJC = 1.0 °C/W), and RoHS/halogen-free compliance per ordering code BE3.

Technical Context

This MOSFET employs third-generation silicon process technology optimized for low on-resistance and fast switching with ruggedized avalanche capability. Its gate threshold voltage (1.0–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic controllers, and its dynamic dV/dt rating (5.5 V/ns) supports stable operation in noisy high-speed switching environments.

The device integrates a body diode with t_rr = 200–260 ns and Q_rr = 1.7–2.90 μC, enabling efficient synchronous rectification and freewheeling in buck converters and H-bridge motor drives. Thermal design is facilitated by low junction-to-case resistance (1.0 °C/W) and TO-220AB's proven heat-sinking capability up to 150 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports input rails up to 48 V nominal systems with margin for transients
R_DS(on) @ V_GS = 5 V	0.077 Ω - enables ≤ 60 W conduction loss at 28 A, critical for high-efficiency power stages
Q_g	64 nC - determines gate drive power requirement and switching speed with typical 9–25 Ω drivers
I_D (continuous, T_C = 25 °C)	28 A - defines maximum steady-state load current without heatsink derating
E_AS	440 mJ - allows safe unclamped inductive switching in motor control and relay driving
T_J max	175 °C - permits operation in industrial ambient environments up to 85–105 °C with proper thermal design
dV/dt rating	5.5 V/ns - ensures immunity to false triggering during high dv/dt events in bridge configurations

Pinout & Package

IRL540PBF-BE3 uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical robustness, low thermal resistance (R_thJC = 1.0 °C/W), and compatibility with common heatsinks and mounting hardware (6-32/M3 screw, 10 lbf·in torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; requires insulating washer if mounted to grounded heatsink
Gate	Control terminal for channel conduction	Logic-level compatible (turns on fully at 4–5 V); sensitive to ESD - requires gate resistor and clamping
Source	Reference node for gate drive and current return	Common return path for load current and gate drive loop; critical for minimizing switching noise coupling

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.0–2.0 V enables direct interfacing with microcontrollers and low-voltage PWM controllers without level-shifting
Repetitive avalanche rated	Rated for I_AR = 28 A and E_AR = 15 mJ - supports reliable operation under inductive load switching stress
R_DS(on) specified at V_GS = 4 V and 5 V	0.11 Ω @ 4 V and 0.077 Ω @ 5 V - guarantees performance in real-world logic-drive conditions, not just test-bench extremes
Fast switching with low Q_gd/Q_g ratio	Q_gd = 27 nC of total Q_g = 64 nC - reduces Miller plateau time and improves hard-switching efficiency
175 °C operating temperature	Enables use in sealed enclosures or high-ambient industrial environments without forced air cooling

Applications

DC-DC Converter High-Side Switch	Motor Drive Half-Bridge
Use Scenario: Used as upper switch in non-synchronous buck converters delivering 5–24 V outputs at up to 20 A. IC Role / Device Role / Timing Role: Power switching element controlling energy transfer from input to output inductor; duty-cycle modulated by external controller. Use Value: Low R_DS(on) minimizes conduction loss; logic-level gate simplifies gate driver IC selection; avalanche rating handles inductor flyback safely.	Use Scenario: Paired with complementary low-side MOSFET in brushed DC motor H-bridge for robotics and actuation. IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control and regenerative braking via PWM commutation. Use Value: Fast t_r/t_f (170/80 ns) supports high-frequency PWM (>20 kHz) for quiet operation; body diode t_rr < 260 ns limits shoot-through risk during dead-time.
Industrial Power Supply OR-ing	LED Driver High-Side Switch
Use Scenario: Parallel redundant 48 V input rails in telecom or server PSUs, where IRL540PBF-BE3 acts as ideal diode replacement. IC Role / Device Role / Timing Role: Forward-conducting switch replacing Schottky diodes to reduce forward drop and improve efficiency. Use Value: R_DS(on) = 0.077 Ω yields < 0.5 V drop at 20 A - cutting conduction loss by >70% vs. 0.7 V diode; ease of paralleling supports current sharing.	Use Scenario: Constant-current LED string driver with high-side current sensing and dimming control. IC Role / Device Role / Timing Role: Series pass element regulating current through LED load; switched at kHz rates for PWM dimming. Use Value: Low gate charge (64 nC) enables efficient high-frequency dimming; 175 °C rating accommodates enclosed LED fixture thermal environments.

DC-DC Converter High-Side Switch

Motor Drive Half-Bridge

Use Scenario: Used as upper switch in non-synchronous buck converters delivering 5–24 V outputs at up to 20 A.

IC Role / Device Role / Timing Role: Power switching element controlling energy transfer from input to output inductor; duty-cycle modulated by external controller.

Use Value: Low R_DS(on) minimizes conduction loss; logic-level gate simplifies gate driver IC selection; avalanche rating handles inductor flyback safely.

Use Scenario: Paired with complementary low-side MOSFET in brushed DC motor H-bridge for robotics and actuation.

IC Role / Device Role / Timing Role: High-side power switch enabling bidirectional motor control and regenerative braking via PWM commutation.

Use Value: Fast t_r/t_f (170/80 ns) supports high-frequency PWM (>20 kHz) for quiet operation; body diode t_rr < 260 ns limits shoot-through risk during dead-time.

Industrial Power Supply OR-ing

LED Driver High-Side Switch

Use Scenario: Parallel redundant 48 V input rails in telecom or server PSUs, where IRL540PBF-BE3 acts as ideal diode replacement.

IC Role / Device Role / Timing Role: Forward-conducting switch replacing Schottky diodes to reduce forward drop and improve efficiency.

Use Value: R_DS(on) = 0.077 Ω yields < 0.5 V drop at 20 A - cutting conduction loss by >70% vs. 0.7 V diode; ease of paralleling supports current sharing.

Use Scenario: Constant-current LED string driver with high-side current sensing and dimming control.

IC Role / Device Role / Timing Role: Series pass element regulating current through LED load; switched at kHz rates for PWM dimming.

Use Value: Low gate charge (64 nC) enables efficient high-frequency dimming; 175 °C rating accommodates enclosed LED fixture thermal environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK50ZFP	500 V V_DS, 10 A I_D, higher R_DS(on) (0.55 Ω), Zener-protected gate	Better suited for high-voltage flyback SMPS; lower current handling limits use in high-power motor drives	Select when primary need is overvoltage robustness (>100 V transients) rather than low-loss 100 V switching
IRF540N	Same package and pinout; higher V_GS(th) (2–4 V), higher R_DS(on) (0.044 Ω @ 10 V but 0.077 Ω only at 10 V - not at 4–5 V)	Requires 10 V gate drive for optimal R_DS(on); less suitable for 3.3 V logic systems	Choose only if gate drive is ≥10 V and halogen-free compliance is not required (IRF540N lacks BE3 suffix)

Compared with STP10NK50ZFP and IRF540N, the IRL540PBF-BE3 uniquely delivers verified 0.077 Ω R_DS(on) at 5 V gate drive, full RoHS/halogen-free compliance, and 440 mJ single-pulse avalanche energy - making it optimal for cost-sensitive, logic-driven 100 V power stages where thermal and EMI margins are constrained.

Availability

IRL540PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and industrial LED lighting requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IRL540PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.

The IRL540PBF-BE3 belongs to Vishay's logic-level power MOSFET product line, engineered for high-efficiency switching in battery-powered, microcontroller-driven, and space-constrained industrial power systems.

FAQ

What is the gate threshold voltage range for IRL540PBF-BE3?

The IRL540PBF-BE3 has a gate-source threshold voltage (V_GS(th)) range of 1.0 V to 2.0 V at T_J = 25 °C and I_D = 250 μA. This logic-level specification ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs. The IRL540PBF-BE3 maintains usable conduction down to ~3 V gate drive, supporting robust operation in margin-limited digital control environments.

Is IRL540PBF-BE3 suitable for avalanche operation in inductive load switching?

Yes, the IRL540PBF-BE3 is explicitly rated for repetitive avalanche operation with I_AR = 28 A and E_AR = 15 mJ, and single-pulse avalanche energy E_AS = 440 mJ. These ratings are validated per Vishay's test conditions (V_DD = 25 V, L = 841 μH). The IRL540PBF-BE3 is commonly used in relay drivers and solenoid controls where inductive kickback must be absorbed without external snubbers.

What is the thermal resistance from junction to case for IRL540PBF-BE3?

The maximum junction-to-case (drain) thermal resistance (R_thJC) for IRL540PBF-BE3 is 1.0 °C/W. This value is measured from the silicon die to the TO-220AB metal tab (drain terminal) under standardized test conditions. When mounted to a heatsink with thermal grease, this low R_thJC enables the IRL540PBF-BE3 to dissipate up to 150 W at T_C = 25 °C, supporting high-power density designs.

Does IRL540PBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, the IRL540PBF-BE3 integrates a parasitic body diode inherent to its vertical N-channel MOSFET structure. Key diode parameters include continuous source-drain current I_S = 28 A, reverse recovery time t_rr = 200–260 ns, and reverse recovery charge Q_rr = 1.7–2.90 μC at T_J = 25 °C. These values make the IRL540PBF-BE3 suitable for freewheeling and synchronous rectification in medium-frequency switching topologies.

How does the "BE3" suffix in IRL540PBF-BE3 affect compliance and packaging?

"BE3" denotes Vishay's lead (Pb)-free and halogen-free packaging standard, compliant with JEDEC JS709B and IPC-1752A requirements. Unlike the base IRL540PbF (Pb-free only), the IRL540PBF-BE3 meets both RoHS Directive 2011/65/EU and halogen-free mandates (<900 ppm Br, <900 ppm Cl, <1500 ppm total halogens). The TO-220AB package and internal construction remain identical across both variants.

IRL540PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 77mOhm @ 17A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 64 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL540PBF-BE3 FAQ

1.How can I place an order for IRL540PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL540PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL540PBF-BE3 reliable?

The price and inventory of IRL540PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL540PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRL540PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL540PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL540PBF-BE3?

IRL540PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL540PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL540PBF-BE3?

For technical support, including IRL540PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL540PBF-BE3 requirements.

6.How does Aetrix verify that IRL540PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRL540PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL540PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRL540PBF-BE3?

All IRL540PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL540PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL540PBF-BE3 part is unused and in its original packaging.

Return procedure for IRL540PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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