My Inquiry
My Account
Vishay Siliconix IRL540STRLPBF
- Part No.:
- IRL540STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL540STRLPBF.pdf
- Description:
- MOSFET N-CH 100V 28A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,456
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRL540STRLPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 100 V VDS, 28 A continuous drain current at TC = 25 °C, and 0.077 Ω RDS(on) at VGS = 5 V. It supports fast switching with 64 nC total gate charge and is designed for high-current DC-DC converters, motor drives, and industrial power supplies.
For engineers reviewing the IRL540STRLPBF datasheet, IRL540STRLPBF pinout, IRL540STRLPBF application, or IRL540STRLPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, avalanche capability, body diode recovery metrics, and surface-mount layout guidance specific to the D2PAK footprint.
Technical Context
This third-generation power MOSFET features ruggedized die design with repetitive avalanche rating (EAR = 15 mJ), dynamic dv/dt tolerance up to 5.5 V/ns, and operation up to 175 °C junction temperature. Its logic-level gate enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry.
The device integrates a low-inductance internal structure (LD = 4.5 nH, LS = 7.5 nH) and exhibits controlled body diode recovery (trr = 200–260 ns, Qrr = 1.7–2.9 μC), supporting synchronous rectification and hard-switched topologies where reverse recovery stress must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage before breakdown; suitable for 48 V bus and 100 V input industrial SMPS. |
| RDS(on) @ VGS = 5 V | 0.077 Ω - Confirmed on-resistance at logic-level gate drive; enables <1.5 W conduction loss at 17 A. |
| ID (continuous, TC = 25 °C) | 28 A - Rated current under heatsink-cooled conditions; requires thermal management above 100 °C case temp. |
| Qg | 64 nC - Total gate charge determines driver strength requirement; ~1.3 A peak needed for 50 ns turn-on with 10 Ω gate resistor. |
| EAS | 440 mJ - Single-pulse avalanche energy; supports unclamped inductive switching in motor control fault conditions. |
| trr (body diode) | 200–260 ns - Reverse recovery time measured at 28 A, 100 A/μs di/dt; impacts switching loss in freewheeling paths. |
| RthJC | 1.0 °C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted to copper plane or heatsink. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration optimized for high-power PCB mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; logic-level compatible (VGS(th) = 1.0–2.0 V); requires <100 nA leakage current handling. |
| 2 (D) | Drain | Main power output terminal; electrically and thermally connected to large exposed copper pad; carries full load current. |
| 3 (S) | Source | Reference node for gate drive and current sensing; internal source inductance (LS = 7.5 nH) affects high-speed switching stability. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4–5 V, eliminating need for gate driver ICs in MCU-based motor control and power modules. |
| Repetitive avalanche rated | Rated for 15 mJ repetitive avalanche energy (EAR), enabling robustness against inductive load transients without external snubbers. |
| Dynamic dv/dt immunity | Guaranteed 5.5 V/ns dv/dt rating prevents false turn-on during high-slew-rate switching in half-bridge configurations. |
| 175 °C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments (e.g., industrial PLCs, solar inverters) without derating below full current. |
| Low gate charge asymmetry | Qgd/Qg = 42 % (27/64 nC) indicates strong Miller immunity; reduces risk of shoot-through in synchronous buck stages. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 200 kHz in telecom power supply. IC Role / Device Role / Timing Role: Main high-side switching element; handles 25 A peak inductor current with forced-air cooling. Use Value: 0.077 Ω RDS(on) limits conduction loss to ≤ 48 W at full load; 64 nC Qg enables efficient gate driving with integrated controller. |
Use Scenario: 24 V, 15 A brushed motor in automated gate actuator with PWM speed control. IC Role / Device Role / Timing Role: High-side switch controlling motor direction and braking via external H-bridge logic. Use Value: Logic-level gate allows direct STM32 GPIO drive; 28 A rating accommodates 3× stall current surges without thermal shutdown. |
| Industrial AC-DC PFC Stage | UPS Inverter Output Stage |
Use Scenario: Boost PFC stage in 1 kW industrial UPS accepting 90–264 VAC input. IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM with 50 kHz–100 kHz variable frequency. Use Value: Low Coss (560 pF) and controlled Qgd reduce switching loss; avalanche rating protects against line surge events. |
Use Scenario: Full-bridge inverter output stage delivering 230 VAC sine-wave output from 380 VDC bus. IC Role / Device Role / Timing Role: Low-side switching device in IGBT/MOSFET hybrid bridge; commutates 20 A RMS load current. Use Value: Body diode trr ≤ 260 ns ensures clean zero-voltage switching transitions; RthJC = 1.0 °C/W enables compact heatsink integration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF540NPbF | RDS(on) = 0.044 Ω @ VGS = 10 V only; VGS(th) = 2–4 V; not logic-level optimized. | Requires 10 V gate drive; unsuitable for 3.3 V MCU interfaces without buffer stage. | Select when higher gate voltage is available and lower RDS(on) at 10 V is prioritized over logic compatibility. |
| STP110N10F7 | RDS(on) = 0.0095 Ω @ VGS = 10 V; logic-level capable (VGS(th) = 1–2.5 V); TO-220 package. | Higher current rating (110 A) but larger through-hole footprint; lacks D2PAK's PCB thermal efficiency. | Choose for ultra-low RDS(on) in non-SMT designs; avoid if D2PAK thermal performance or surface-mount assembly is required. |
Compared with IRL540STRLPBF, IRF540NPbF demands higher gate voltage for optimal RDS(on), while STP110N10F7 offers lower on-resistance but sacrifices D2PAK's thermal dissipation advantage and SMT compatibility-making IRL540STRLPBF optimal for space-constrained, logic-driven, high-reliability power stages.
Availability
IRL540STRLPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for IRL540STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRL540STRLPBF belongs to Vishay's logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in space-constrained surface-mount applications where gate drive simplicity and thermal robustness are critical.
FAQ
What is the maximum continuous drain current for IRL540STRLPBF at 100 °C case temperature?
The IRL540STRLPBF supports 20 A continuous drain current at TC = 100 °C, per its absolute maximum ratings table. This reflects linear derating from 28 A at 25 °C using a 1.0 W/°C factor. Designers must ensure heatsinking maintains case temperature ≤ 100 °C under full load to sustain this current without exceeding 175 °C junction limit.
Does IRL540STRLPBF have avalanche capability, and is it rated for repetitive use?
Yes, the IRL540STRLPBF is explicitly rated for repetitive avalanche operation with EAR = 15 mJ and IAR = 28 A. This capability is validated per Figure 12 and Note "a" in the datasheet, making it suitable for inductive load switching where transient overvoltage may occur repeatedly-such as in solenoid drivers or relay replacement circuits.
What is the gate-source threshold voltage range for IRL540STRLPBF, and how does it impact logic-level compatibility?
The IRL540STRLPBF has a VGS(th) range of 1.0 V to 2.0 V at TJ = 25 °C, confirming true logic-level operation. This allows full enhancement with standard 3.3 V or 5 V digital outputs, eliminating external level shifters. At VGS = 4 V, RDS(on) remains low (0.11 Ω), ensuring usable conduction even with marginal gate drive margins.
Can IRL540STRLPBF be used in parallel configurations, and what design considerations apply?
Yes, the IRL540STRLPBF supports paralleling due to its positive RDS(on) temperature coefficient, which promotes current sharing. Key considerations include matched gate drive impedance (<5 Ω per device), symmetrical PCB layout to minimize loop inductance, and individual gate resistors (≥10 Ω) to damp oscillation. Thermal coupling between devices must also be managed to prevent thermal runaway.
What is the body diode forward voltage of IRL540STRLPBF, and how does it affect freewheeling performance?
The body diode forward voltage (VSD) of the IRL540STRLPBF is 2.5 V maximum at IS = 28 A and TJ = 25 °C. While higher than Schottky diodes, its controlled reverse recovery (trr = 200–260 ns, Qrr = 1.7–2.9 μC) minimizes voltage spikes and EMI in freewheeling paths-critical for reliable operation in hard-switched motor drives and SMPS.
IRL540STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 77mOhm @ 17A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2200 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.7W (Ta), 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL540STRLPBF FAQ
1.How can I place an order for IRL540STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL540STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL540STRLPBF reliable?
The price and inventory of IRL540STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL540STRLPBF is usually 5 days.
3.What payment methods are accepted for IRL540STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL540STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL540STRLPBF?
IRL540STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL540STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL540STRLPBF?
For technical support, including IRL540STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL540STRLPBF requirements.
6.How does Aetrix verify that IRL540STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRL540STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL540STRLPBF meets industry standards.
7.What is the process for return or replacement of IRL540STRLPBF?
All IRL540STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL540STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL540STRLPBF part is unused and in its original packaging.
Return procedure for IRL540STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRL540STRLPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
