Vishay Siliconix IRL620PBF

Overview

IRL620PBF from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 200 V V_DS, 5.2 A continuous drain current at T_C = 25 °C, and 0.80 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and is widely used in DC-DC converters, motor control circuits, and power supply synchronous rectification.

For engineers reviewing the IRL620PBF datasheet, IRL620PBF pinout, IRL620PBF application, or IRL620PBF equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 125 mJ), and TO-220AB thermal performance (R_thJC = 2.5 °C/W).

Technical Context

The IRL620PBF employs third-generation planar vertical DMOS technology optimized for ruggedness and low conduction loss. Its gate threshold voltage range (1.0–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers, and its dynamic dV/dt rating (5.0 V/ns) supports stable operation in noisy high-speed switching environments.

It features an integral body diode with t_rr = 180–270 ns and Q_rr = 1.1–1.7 μC, enabling moderate-frequency freewheeling in inductive loads. The device is specified for operation from –55 °C to +150 °C junction temperature and supports unclamped inductive switching up to I_AS = 5.2 A.

Key Specifications

Pinout & Package

IRL620PBF is housed in a through-hole TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (R_thJC = 2.5 °C/W) and mechanical robustness for industrial mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP2NK60ZFP and IRFZ44NPBF, the IRL620PBF uniquely balances 200 V rating, logic-level drive, and moderate R_DS(on), making it optimal for 24–48 V industrial power stages where gate drive simplicity and avalanche robustness are prioritized over ultra-low on-resistance or extreme voltage rating.

Availability

IRL620PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and auxiliary power supplies requiring stable component supply across extended production lifecycles.

Supply support for IRL620PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and application-specific optimization.

The IRL620PBF belongs to Vishay's logic-level power MOSFET product line, engineered for direct interface with low-voltage digital controllers in industrial power conversion, motor drives, and protection circuits.

FAQ

What is the maximum continuous drain current for IRL620PBF at 100 °C case temperature?

The IRL620PBF supports 3.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using R_thJC = 2.5 °C/W and ambient conditions to ensure safe operation of the IRL620PBF.

Is IRL620PBF RoHS-compliant and halogen-free?

Yes, the IRL620PBF-BE3 variant is both lead (Pb)-free and halogen-free, meeting RoHS Directive 2011/65/EU and JEDEC JS709A requirements. The base part IRL620PBF is Pb-free but not halogen-free; halogen-free status applies only to the -BE3 suffix. Material compliance data for the IRL620PBF is documented in Vishay's official material declaration reports.

Does IRL620PBF have an integrated body diode, and what are its key parameters?

Yes, the IRL620PBF includes an integral reverse p–n junction body diode. Key parameters include V_SD = 1.8 V at I_S = 5.2 A and T_J = 25 °C, t_rr = 180–270 ns, and Q_rr = 1.1–1.7 μC. These values are measured under standardized conditions (IF = 5.2 A, dI/dt = 100 A/μs) and define freewheeling behavior in inductive switching applications using the IRL620PBF.

Can IRL620PBF be paralleled with identical units for higher current handling?

Yes, the IRL620PBF is designed for ease of paralleling due to its positive R_DS(on) temperature coefficient and matched threshold voltage distribution. Parallel operation requires matched gate resistors, symmetrical layout, and shared heatsinking to ensure current sharing within ±10%. The IRL620PBF datasheet confirms this capability in its Features section and thermal derating curves.

What is the peak diode recovery dV/dt rating for IRL620PBF, and why does it matter?

The peak diode recovery dV/dt rating for IRL620PBF is 5.0 V/ns, measured under defined test conditions (T_J ≤ 150 °C, I_SD ≤ 5.2 A). This parameter indicates the maximum rate of voltage rise the body diode can withstand during reverse recovery without triggering parasitic turn-on of the MOSFET channel. Exceeding 5.0 V/ns risks shoot-through in bridge configurations, so proper snubbing or layout control is essential when using the IRL620PBF in high-dv/dt environments.