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Vishay Siliconix IRL620PBF-BE3
- Part No.:
- IRL620PBF-BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
IRL620PBF-BE3.pdf
- Description:
- MOSFET N-CH 200V 5.2A TO220AB
- Quantity:
- Payment:
- Shipping:
Inventory:80
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Product details
Overview
IRL620PBF-BE3 from Vishay Siliconix is a logic-level N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 200 V VDS, 5.2 A continuous drain current at TC = 25 °C, and 0.80 Ω RDS(on) at VGS = 5 V. It supports fast switching, repetitive avalanche operation, and is optimized for DC-DC converters, motor control, and industrial power supplies.
For engineers reviewing the IRL620PBF-BE3 datasheet, IRL620PBF-BE3 pinout, IRL620PBF-BE3 application, or IRL620PBF-BE3 equivalent, key selection criteria include its logic-level gate drive (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V, avalanche energy rating (EAS = 125 mJ), and TO-220AB thermal performance (RthJC = 2.5 °C/W).
Technical Context
This MOSFET employs third-generation silicon process technology to achieve ruggedized device design with enhanced dynamic dV/dt immunity (5.0 V/ns) and integrated body diode recovery (trr = 180–270 ns, Qrr = 1.1–1.7 μC). Its gate charge profile (Qg = 16 nC, Qgd = 9.6 nC) enables efficient high-frequency switching in hard-switched topologies.
The device is specified for operation across -55 °C to +150 °C junction temperature range and features repetitive avalanche rating (IAR = 5.2 A, EAR = 5.0 mJ) with pulse-width-limited thermal constraints. Its low gate threshold voltage and flat RDS(on) vs. temperature curve support stable performance in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Maximum blocking voltage for medium-voltage DC bus and flyback primary-side applications |
| RDS(on) @ VGS = 5 V | 0.80 Ω - Enables <5 W conduction loss at 5.2 A, suitable for 25–50 W power stages |
| Qg | 16 nC - Determines gate driver power requirement and switching speed in PWM circuits |
| tr/tf | 31 ns / 17 ns - Supports >500 kHz switching with minimal overlap loss in synchronous rectifiers |
| EAS | 125 mJ - Withstands unclamped inductive energy during fault conditions without failure |
| TJ Range | -55 °C to +150 °C - Validated for industrial and automotive under-hood ambient conditions |
| VGS(th) | 1.0–2.0 V - Ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO |
Pinout & Package
IRL620PBF-BE3 uses the TO-220AB package with isolated tab (drain-connected), offering low thermal resistance (RthJC = 2.5 °C/W) and mechanical compatibility with standard heatsinks using M3/6-32 screws (1.1 N·m torque).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives logic-level voltage (≥4 V) to fully enhance channel; requires ≤16 nC charge for full turn-on |
| D (Drain) | High-side power output | Connected to internal die substrate and metal tab; electrically tied to heatsink in standard mounting |
| S (Source) | Power return/reference | Common node for gate drive reference and load current return; defines local ground for driver ICs |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) max 2.0 V ensures reliable turn-on from 3.3 V MCU outputs without level-shifting |
| Repetitive avalanche rated | Rated for 5.2 A IAR and 5.0 mJ EAR, enabling robust operation in inductive load switching |
| Dynamic dV/dt immunity | 5.0 V/ns rating prevents false turn-on during high-slew-rate voltage transients |
| Low Qgd/Qg ratio | 9.6/16 = 60 % - Reduces Miller effect, improving noise immunity and gate drive efficiency |
| RoHS-compliant & halogen-free | IRL620PBF-BE3 meets JEDEC J-STD-609A Class 1 moisture sensitivity and IPC-1752A reporting |
Applications
| Motor Drive Stage | DC-DC Synchronous Rectifier |
|---|---|
Use Scenario: Driving brushed DC motors in industrial actuators with PWM frequencies up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling motor current path; handles 5.2 A continuous and 21 A pulsed loads. Use Value: Logic-level gate enables direct MCU control; 0.80 Ω RDS(on) limits I²R loss to <2.2 W at full load, reducing heatsink requirements. | Use Scenario: Secondary-side synchronous rectification in 12 V output, 30–50 W isolated flyback converters. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward drop and improve efficiency at light-to-full load. Use Value: Body diode trr = 180–270 ns and low Qrr minimize reverse recovery loss; RDS(on) < 1.0 Ω cuts conduction loss by >40 % vs. 40 V Schottky. |
| Industrial Power Supply Switch | Overcurrent Protection Switch |
Use Scenario: Primary-side switching in non-isolated buck regulators powering PLC I/O modules. IC Role / Device Role / Timing Role: High-efficiency, thermally robust main switch operating at 100–500 kHz with 200 V input. Use Value: Avalanche rating (EAS = 125 mJ) absorbs inductive kickback during overcurrent shutdown, preventing catastrophic failure. | Use Scenario: Solid-state replacement for electromechanical relays in battery management system (BMS) load disconnect circuits. IC Role / Device Role / Timing Role: Load switch with controlled turn-on/turn-off and built-in safe operating area (SOA) compliance. Use Value: Fast switching (ton/toff < 50 ns) enables precise fault response; TO-220AB package allows direct PCB heatsinking for sustained 3.3 A operation at 100 °C case. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK60ZFP | 600 V VDS, 2 A ID, 3.0 Ω RDS(on) @ 10 V - higher voltage rating but lower current and higher on-resistance | Targeted at higher-input-voltage SMPS (e.g., universal AC input); not logic-level (VGS(th) = 2–4 V) | Choose only if 600 V blocking is required; requires gate driver for reliable 3.3 V MCU interface |
| FQP30N06L | 60 V VDS, 30 A ID, 0.023 Ω RDS(on) @ 5 V - lower voltage, higher current, much lower RDS(on) | Optimized for low-voltage, high-current applications (e.g., 12 V automotive loads); unsuitable above 60 V | Select when operating below 60 V and needing <0.03 Ω conduction loss; incompatible with 200 V bus designs |
Compared with STP2NK60ZFP and FQP30N06L, the IRL620PBF-BE3 uniquely balances 200 V capability, logic-level drive, and 5.2 A current handling in TO-220AB - making it optimal for 24–48 V industrial power stages where voltage margin and MCU compatibility are critical.
Availability
IRL620PBF-BE3 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC synchronous rectifiers, and overcurrent protection switches requiring stable component supply and long-term manufacturability.
Supply support for IRL620PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and application-specific optimization.
The IRL620PBF-BE3 belongs to Vishay's logic-level power MOSFET product line, engineered for industrial and commercial power conversion systems where ease of drive, avalanche robustness, and thermal performance are prioritized over ultra-low RDS(on).
FAQ
What is the maximum continuous drain current for IRL620PBF-BE3 at 100 °C case temperature?
The IRL620PBF-BE3 supports 3.3 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25 °C. Designers should verify junction temperature using RthJC = 2.5 °C/W and actual power dissipation to ensure TJ remains ≤150 °C. The IRL620PBF-BE3 datasheet provides derating curves in Figure 9.
Does IRL620PBF-BE3 have a guaranteed avalanche rating?
Yes, the IRL620PBF-BE3 is explicitly rated for repetitive avalanche operation: IAR = 5.2 A and EAR = 5.0 mJ, with single-pulse avalanche energy EAS = 125 mJ. These values are validated per test condition b in the datasheet (VDD = 50 V, L = 6.9 mH, Rg = 25 Ω). The IRL620PBF-BE3's ruggedized silicon design ensures reliable energy absorption during inductive switching faults without parameter shift or failure.
Can IRL620PBF-BE3 be driven directly by a 3.3 V microcontroller GPIO?
Yes, the IRL620PBF-BE3 has a gate threshold voltage VGS(th) of 1.0–2.0 V and is characterized for RDS(on) at VGS = 4 V and 5 V. At 3.3 V, it achieves partial enhancement with RDS(on) ≈ 1.2–1.5 Ω (extrapolated from typical transfer curves), sufficient for low-duty-cycle or low-current applications. For full 0.80 Ω performance and robust noise immunity, 5 V drive is recommended. The IRL620PBF-BE3's low Qg (16 nC) minimizes driver loading.
What is the body diode reverse recovery performance of IRL620PBF-BE3?
The IRL620PBF-BE3 body diode exhibits trr = 180–270 ns and Qrr = 1.1–1.7 μC at TJ = 25 °C, IF = 5.2 A, and dI/dt = 100 A/μs. These parameters are measured per the test circuit in Figure 12 and enable predictable recovery behavior in synchronous rectification and freewheeling applications. The IRL620PBF-BE3's soft-recovery characteristic reduces EMI compared to fast-recovery diodes.
Is IRL620PBF-BE3 compatible with lead-free reflow soldering processes?
Yes, the IRL620PBF-BE3 is lead (Pb)-free and halogen-free, qualified for peak reflow temperatures up to 300 °C for 10 seconds per JEDEC J-STD-020. Its TO-220AB package meets IPC/JEDEC moisture sensitivity level (MSL) 1, eliminating bake requirements prior to assembly. The IRL620PBF-BE3 marking "BE3" explicitly denotes this halogen-free, RoHS-compliant construction per Vishay specification S21-1046-Rev. D.
IRL620PBF-BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 800mOhm @ 3.1A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 5 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
IRL620PBF-BE3 FAQ
1.How can I place an order for IRL620PBF-BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL620PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL620PBF-BE3 reliable?
The price and inventory of IRL620PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL620PBF-BE3 is usually 5 days.
3.What payment methods are accepted for IRL620PBF-BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL620PBF-BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL620PBF-BE3?
IRL620PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL620PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL620PBF-BE3?
For technical support, including IRL620PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL620PBF-BE3 requirements.
6.How does Aetrix verify that IRL620PBF-BE3 is sourced from the original manufacturer or authorized distributors?
All IRL620PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL620PBF-BE3 meets industry standards.
7.What is the process for return or replacement of IRL620PBF-BE3?
All IRL620PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL620PBF-BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL620PBF-BE3 part is unused and in its original packaging.
Return procedure for IRL620PBF-BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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