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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL620STRLPBF

Name: IRL620STRLPBF
Brand: Vishay Siliconix
SKU: IRL620STRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL620STRLPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL620STRLPBF.pdf

Description:: MOSFET N-CH 200V 5.2A D2PAK

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Product details

Overview

IRL620STRLPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V V_DS, 5.2 A continuous drain current at T_C = 25 °C, and 0.80 Ω R_DS(on) at V_GS = 10 V. It supports fast switching, repetitive avalanche operation, and is optimized for high-current DC-DC converters and motor control circuits requiring low gate drive voltage.

For engineers reviewing the IRL620STRLPBF datasheet, IRL620STRLPBF pinout, IRL620STRLPBF application, or IRL620STRLPBF equivalent, key selection criteria include its logic-level gate threshold (1.0–2.0 V), 16 nC total gate charge, 5.2 A body diode capability, dV/dt ruggedness (5.0 V/ns), and thermal resistance of 2.5 °C/W junction-to-case - all critical for high-efficiency, thermally constrained industrial power stages.

Technical Context

This MOSFET employs third-generation silicon technology with optimized cell layout for reduced R_DS(on) and enhanced switching performance. Its dynamic dV/dt rating and unclamped inductive switching capability (E_AS = 125 mJ) enable robust operation in hard-switched topologies without external snubbers.

The device integrates a fast-recovery body diode (t_rr = 180–270 ns, Q_rr = 1.1–1.7 μC) and features low internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH), minimizing switching oscillation and improving EMI behavior in high-frequency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 170 V DC in offline or industrial bus applications
R_DS(on) @ V_GS = 10 V	0.80 Ω - enables <5 W conduction loss at 5.2 A, suitable for medium-power switching
Q_g	16 nC - determines gate driver power requirement and switching speed in 100–500 kHz converters
I_D (continuous, T_C = 25 °C)	5.2 A - defines maximum steady-state current with heatsink or PCB copper area
t_rr (body diode)	180–270 ns - limits reverse recovery losses and cross-conduction risk in synchronous rectification
R_thJC	2.5 °C/W - allows direct thermal path to heatsink; enables 45 W dissipation before reaching 150 °C junction
E_AS	125 mJ - permits safe energy absorption during inductive turn-off transients without derating

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); standard JEDEC outline; recommended minimum pad dimensions per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-level compatible (V_GS(th) = 1.0–2.0 V); requires ≤10 V drive; low C_iss (360 pF) eases driver selection
D (Drain)	High-side power terminal	Connected to exposed copper pad; carries full load current and dissipates heat directly to PCB/heatsink
S (Source)	Reference/return node	Common return for gate drive and load current; low-inductance layout critical due to L_S = 7.5 nH

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) ≤ 1.0 Ω), enabling direct interface with 3.3 V/5 V microcontrollers
Repetitive avalanche rated	Rated for I_AR = 5.2 A and E_AR = 5.0 mJ, allowing reliable operation under transient overloads without external protection
Fast switching with low Q_gd/Q_gs	Q_gd = 9.6 nC and Q_gs = 2.9 nC yield Miller ratio ~3.3, supporting stable high-speed switching up to 500 kHz
Ruggedized dV/dt immunity	Specified dV/dt = 5.0 V/ns ensures immunity to parasitic turn-on in high-di/dt environments (e.g., motor drives)
RoHS-compliant, lead-free	Meets EU RoHS Directive 2011/65/EU; halogen-free option available (SiHL620STRL-GE3)

Applications

Brushless DC Motor Driver	Industrial DC-DC Converter
Use Scenario: Half-bridge leg in 24–48 V BLDC inverters driving fans, pumps, or compressors. IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time. Use Value: 5.2 A continuous current and 180–270 ns t_rr minimize conduction and recovery losses, improving efficiency by ≥2% vs. standard MOSFETs in 20 kHz PWM.	Use Scenario: Primary-side switch in isolated flyback or forward converters for programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: High-voltage power switch handling 200 V input transients and delivering regulated 5–24 V outputs. Use Value: 200 V V_DS rating and 125 mJ E_AS withstand line surges and transformer leakage spikes without clamping circuitry.
Solar Charge Controller	LED Constant-Current Driver
Use Scenario: Buck-stage switch regulating battery charging current from 60–100 V PV arrays. IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET controlling duty cycle based on MPPT algorithm output. Use Value: Logic-level gate enables direct PWM control from low-power MCU; R_DS(on) = 0.80 Ω keeps thermal rise below 40 °C at 4 A with minimal heatsinking.	Use Scenario: High-side switch in constant-current LED drivers for street lighting or industrial signage. IC Role / Device Role / Timing Role: Current-regulating switch modulating LED string current via PWM dimming at 1–10 kHz. Use Value: Fast turn-on delay (4.2 ns) and rise time (31 ns) ensure precise dimming linearity and reduce audible noise in magnetics.

Brushless DC Motor Driver

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC inverters driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 5.2 A continuous current and 180–270 ns t_rr minimize conduction and recovery losses, improving efficiency by ≥2% vs. standard MOSFETs in 20 kHz PWM.

Use Scenario: Primary-side switch in isolated flyback or forward converters for programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: High-voltage power switch handling 200 V input transients and delivering regulated 5–24 V outputs.

Use Value: 200 V V_DS rating and 125 mJ E_AS withstand line surges and transformer leakage spikes without clamping circuitry.

Solar Charge Controller

LED Constant-Current Driver

Use Scenario: Buck-stage switch regulating battery charging current from 60–100 V PV arrays.

IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET controlling duty cycle based on MPPT algorithm output.

Use Value: Logic-level gate enables direct PWM control from low-power MCU; R_DS(on) = 0.80 Ω keeps thermal rise below 40 °C at 4 A with minimal heatsinking.

Use Scenario: High-side switch in constant-current LED drivers for street lighting or industrial signage.

IC Role / Device Role / Timing Role: Current-regulating switch modulating LED string current via PWM dimming at 1–10 kHz.

Use Value: Fast turn-on delay (4.2 ns) and rise time (31 ns) ensure precise dimming linearity and reduce audible noise in magnetics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF620PBF	V_GS(th) = 2.0–4.0 V; R_DS(on) = 0.80 Ω @ V_GS = 10 V but not specified at 4 V; no logic-level guarantee	Requires ≥10 V gate drive; unsuitable for 3.3 V MCU interfaces without level-shifting	Select IRL620STRLPBF when logic-level compatibility, low-Q_g, or body diode recovery performance is required
STP20NM20	V_DS = 200 V; R_DS(on) = 0.22 Ω @ V_GS = 10 V; Q_g = 25 nC; t_rr = 300 ns	Lower R_DS(on) but higher Q_g and slower diode recovery; less dV/dt rugged	Choose IRL620STRLPBF for better switching efficiency in high-frequency designs where gate drive strength is limited

Compared with IRF620PBF and STP20NM20, the IRL620STRLPBF delivers verified logic-level operation, superior dV/dt immunity (5.0 V/ns), and faster body diode recovery - making it optimal for compact, high-efficiency 200 V switching stages driven by low-voltage controllers.

Availability

IRL620STRLPBF is available at Aetrix Electronics and suitable for industrial motor control, solar charge regulation, and LED driver designs requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IRL620STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and thermal performance.

The IRL620STRLPBF belongs to Vishay's logic-level power MOSFET family designed specifically for high-efficiency, space-constrained industrial and renewable energy systems where low gate drive voltage and avalanche robustness are essential.

FAQ

What is the maximum continuous drain current for IRL620STRLPBF at 100 °C case temperature?

The IRL620STRLPBF supports 3.3 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB copper area and ambient conditions in the final design. The IRL620STRLPBF's R_thJC = 2.5 °C/W enables predictable junction temperature estimation using P_D = I_D² × R_DS(on).

Does IRL620STRLPBF have avalanche capability, and how is it rated?

Yes, the IRL620STRLPBF is repetitively avalanche rated with I_AR = 5.2 A and E_AR = 5.0 mJ, and single-pulse avalanche energy E_AS = 125 mJ. These ratings are measured under defined test conditions (V_DD = 50 V, L = 6.9 mH, R_g = 25 Ω) and allow safe operation during inductive turn-off events without external protection. The IRL620STRLPBF's ruggedized die design ensures consistent performance across its operating temperature range.

What is the gate threshold voltage range for IRL620STRLPBF, and why does it matter?

The IRL620STRLPBF has a gate threshold voltage V_GS(th) of 1.0–2.0 V at T_J = 25 °C, confirming true logic-level operation. This range ensures full enhancement with 3.3 V or 5 V microcontroller outputs, eliminating need for gate drivers in many medium-power applications. The tight V_GS(th) distribution also improves system consistency - critical for parallel MOSFET configurations in the IRL620STRLPBF's target use cases.

Can IRL620STRLPBF be used in surface-mount designs without a heatsink?

The IRL620STRLPBF can operate without an external heatsink in low-duty-cycle or low-power applications (e.g., ≤1.5 W dissipation), provided the PCB uses ≥1"² FR-4 copper area per Vishay's thermal guidelines. Its R_thJA = 40 °C/W (PCB mount) and R_thJC = 2.5 °C/W mean junction temperature rises ~100 °C at 3.1 W - so thermal design must verify T_J stays ≤150 °C. For sustained 5.2 A operation, heatsinking is required; the IRL620STRLPBF's exposed drain pad facilitates this.

How does the body diode performance of IRL620STRLPBF compare to standard MOSFETs?

The IRL620STRLPBF features a fast, soft-recovery body diode with t_rr = 180–270 ns and Q_rr = 1.1–1.7 μC - significantly faster than typical general-purpose MOSFETs (often >500 ns). This reduces switching losses and EMI in synchronous rectification and freewheeling paths. The IRL620STRLPBF's diode forward voltage is 1.8 V at 5.2 A, balancing conduction loss and recovery speed for high-efficiency 200 V power stages.

IRL620STRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 800mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 360 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL620STRLPBF FAQ

1.How can I place an order for IRL620STRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL620STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL620STRLPBF reliable?

The price and inventory of IRL620STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL620STRLPBF is usually 5 days.

3.What payment methods are accepted for IRL620STRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL620STRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL620STRLPBF?

IRL620STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL620STRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL620STRLPBF?

For technical support, including IRL620STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL620STRLPBF requirements.

6.How does Aetrix verify that IRL620STRLPBF is sourced from the original manufacturer or authorized distributors?

All IRL620STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL620STRLPBF meets industry standards.

7.What is the process for return or replacement of IRL620STRLPBF?

All IRL620STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL620STRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL620STRLPBF part is unused and in its original packaging.

Return procedure for IRL620STRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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