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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL630PBF-BE3

Name: IRL630PBF-BE3
Brand: Vishay Siliconix
SKU: IRL630PBF-BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL630PBF-BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRL630PBF-BE3.pdf

Description:: MOSFET N-CH 200V 9A TO220AB

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Product details

Overview

IRL630PBF-BE3 from Vishay Siliconix is a logic-level N-channel power MOSFET in TO-220AB package, rated for 200 V V_DS, 9.0 A continuous drain current at T_C = 25 °C, and 0.40 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and operates up to 150 °C junction temperature-commonly used in DC-DC converters and motor control stages.

For engineers reviewing the IRL630PBF-BE3 datasheet, IRL630PBF-BE3 pinout, IRL630PBF-BE3 application, or IRL630PBF-BE3 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low R_DS(on) at 4–5 V, avalanche energy rating (E_AS = 250 mJ), thermal resistance (R_thJC = 1.7 °C/W), and TO-220AB mechanical mounting requirements.

Technical Context

This MOSFET belongs to Vishay's third-generation power MOSFET family optimized for ruggedness and cost-effective high-current switching. Its logic-level gate enables direct drive from microcontrollers or gate drivers operating at 4–5 V, eliminating level-shifting circuitry. The device features integrated body diode with t_rr = 230–350 ns and Q_rr = 1.7–2.6 μC, supporting synchronous rectification and inductive load handling.

Thermal design is facilitated by low junction-to-case resistance (1.7 °C/W) and TO-220AB package compatibility with standard heatsinks. Repetitive avalanche capability (I_AR = 9.0 A, E_AR = 7.4 mJ) allows safe operation under unclamped inductive switching, critical in relay drivers and solenoid controls.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 160 V DC with margin for transients
R_DS(on) @ V_GS = 5 V	0.40 Ω - enables ≤ 32 W conduction loss at 9 A, suitable for medium-power SMPS
Q_g	40 nC - determines gate driver current requirement (~2 A peak for 20 ns rise time)
I_D (continuous, T_C = 25 °C)	9.0 A - defines maximum steady-state load current with adequate heatsinking
E_AS	250 mJ - specifies single-pulse avalanche energy tolerance without failure
T_J max	+150 °C - permits operation in industrial environments without derating below 100 °C ambient
V_GS(th)	1.0–2.0 V - ensures turn-on with standard 3.3 V or 5 V logic outputs

Pinout & Package

IRL630PBF-BE3 uses the TO-220AB package: insulated tab, vertical lead orientation, 3-pin through-hole configuration with standard 6–32 or M3 mounting screw interface. Thermal path is optimized via low R_thJC = 1.7 °C/W to the drain-connected tab.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts logic-level voltage (≥2 V) to fully enhance channel; requires <100 nA leakage current budget
D (Drain)	High-side power terminal	Connected to heatsink via insulated tab; carries full load current and avalanche energy dissipation path
S (Source)	Reference/return node	Common return for gate drive and load; internal source inductance (L_S = 7.5 nH) affects switching ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4–5 V, enabling direct MCU GPIO control without external level shifters
Repetitive avalanche rated	Rated for sustained 9.0 A repetitive avalanche current (I_AR) and 7.4 mJ energy (E_AR) under defined pulse conditions
Dynamic dV/dt immunity	Specified peak diode recovery dV/dt = 5.0 V/ns - resists false turn-on during fast voltage transients
Low R_DS(on) at low V_GS	0.50 Ω at V_GS = 4 V - maintains efficiency in battery-powered or 5 V rail systems
150 °C operation	Rated junction temperature extends usable life in sealed enclosures or high-ambient industrial settings

Applications

DC-DC Buck Converter	Motor Drive Half-Bridge
Use Scenario: High-efficiency 12–48 V input buck regulator delivering up to 7 A output. IC Role / Device Role / Timing Role: Synchronous high-side switch controlling power delivery to output inductor and capacitor. Use Value: Low R_DS(on) (0.40 Ω) minimizes conduction loss; fast switching (t_r = 57 ns) reduces transition loss at 200–500 kHz.	Use Scenario: 24 V brushed DC motor control with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology, sinking motor current during PWM off-time. Use Value: Logic-level gate enables direct 3.3 V/5 V MCU PWM drive; body diode t_rr = 230–350 ns limits flyback recovery loss.
Inductive Load Switching	Power Supply OR'ing
Use Scenario: Solid-state replacement for electromechanical relays driving 12–24 V solenoids or valves. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via controlled avalanche. Use Value: Single-pulse avalanche energy rating of 250 mJ (E_AS) prevents failure during turn-off of 100–500 mH loads.	Use Scenario: Redundant 12 V power supply OR'ing in telecom or server backplanes. IC Role / Device Role / Timing Role: Low-loss forward conduction path with minimal V_SD drop (<2.0 V) during source-to-load current flow. Use Value: Body diode forward voltage ≤2.0 V at 9 A reduces power loss vs. Schottky alternatives; TO-220AB enables bolt-down thermal management.

DC-DC Buck Converter

Motor Drive Half-Bridge

Use Scenario: High-efficiency 12–48 V input buck regulator delivering up to 7 A output.

IC Role / Device Role / Timing Role: Synchronous high-side switch controlling power delivery to output inductor and capacitor.

Use Value: Low R_DS(on) (0.40 Ω) minimizes conduction loss; fast switching (t_r = 57 ns) reduces transition loss at 200–500 kHz.

Use Scenario: 24 V brushed DC motor control with PWM frequency up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element in half-bridge topology, sinking motor current during PWM off-time.

Use Value: Logic-level gate enables direct 3.3 V/5 V MCU PWM drive; body diode t_rr = 230–350 ns limits flyback recovery loss.

Inductive Load Switching

Power Supply OR'ing

Use Scenario: Solid-state replacement for electromechanical relays driving 12–24 V solenoids or valves.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via controlled avalanche.

Use Value: Single-pulse avalanche energy rating of 250 mJ (E_AS) prevents failure during turn-off of 100–500 mH loads.

Use Scenario: Redundant 12 V power supply OR'ing in telecom or server backplanes.

IC Role / Device Role / Timing Role: Low-loss forward conduction path with minimal V_SD drop (<2.0 V) during source-to-load current flow.

Use Value: Body diode forward voltage ≤2.0 V at 9 A reduces power loss vs. Schottky alternatives; TO-220AB enables bolt-down thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF630NPbF	V_GS(th) = 2.0–4.0 V; R_DS(on) = 0.35 Ω @ V_GS = 10 V only; not logic-level	Requires 10 V gate drive; unsuitable for 3.3 V/5 V MCU direct drive	Select IRL630PBF-BE3 when gate voltage ≤5 V; choose IRF630NPbF only if 10 V drive available and lower R_DS(on) at 10 V is prioritized
STP20NM60FD	600 V V_DS; R_DS(on) = 0.30 Ω @ V_GS = 10 V; logic-level (V_GS(th) = 2.0–4.0 V); faster Q_g = 32 nC	Higher voltage rating trades off for higher cost and larger die; not optimized for 200 V class	Prefer IRL630PBF-BE3 for 200 V systems needing proven avalanche robustness and TO-220AB footprint; STP20NM60FD fits higher-voltage designs where 600 V margin is required

Compared with IRF630NPbF and STP20NM60FD, IRL630PBF-BE3 uniquely delivers logic-level operation at 200 V with verified repetitive avalanche performance and industry-standard TO-220AB thermal/mechanical interface-making it optimal for cost-sensitive, medium-voltage industrial switching where gate drive simplicity and ruggedness are critical.

Availability

IRL630PBF-BE3 is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and inductive load switching requiring stable component supply and long-term industrial availability.

Supply support for IRL630PBF-BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, headquartered in Malvern, PA, with vertically integrated fabrication and packaging facilities.

The IRL630PBF-BE3 belongs to Vishay Siliconix's logic-level power MOSFET product line, engineered for high-reliability switching in industrial power supplies, motor drives, and solid-state relay replacements where low gate drive voltage and avalanche tolerance are essential.

FAQ

What is the gate threshold voltage range for IRL630PBF-BE3?

The IRL630PBF-BE3 has a gate-source threshold voltage (V_GS(th)) range of 1.0 V to 2.0 V at T_J = 25 °C and I_D = 250 μA. This logic-level specification ensures reliable turn-on with standard 3.3 V or 5 V microcontroller outputs. The IRL630PBF-BE3 maintains this low-threshold behavior across its full operating temperature range, supporting robust operation in industrial environments.

Is IRL630PBF-BE3 suitable for avalanche operation?

Yes, the IRL630PBF-BE3 is explicitly rated for both single-pulse (E_AS = 250 mJ) and repetitive avalanche (I_AR = 9.0 A, E_AR = 7.4 mJ). These ratings are validated per Vishay's test conditions (V_DD = 25 V, L = 4.6 mH, R_g = 25 Ω). The IRL630PBF-BE3 is designed for unclamped inductive switching in applications like relay replacement and solenoid control where energy must be safely absorbed internally.

What is the maximum continuous drain current for IRL630PBF-BE3 at 100 °C case temperature?

The IRL630PBF-BE3 supports a continuous drain current (I_D) of 5.7 A at T_C = 100 °C, derated from 9.0 A at 25 °C using a linear derating factor of 0.59 W/°C. This value reflects real thermal limits under sustained conduction and must be applied with appropriate heatsinking. The IRL630PBF-BE3 datasheet confirms this rating in the Absolute Maximum Ratings table and Fig. 9 (Maximum Drain Current vs. Case Temperature).

Does IRL630PBF-BE3 have a built-in body diode, and what are its key parameters?

Yes, the IRL630PBF-BE3 integrates a body diode with typical forward voltage (V_SD) ≤ 2.0 V at I_S = 9.0 A and T_J = 25 °C. Its reverse recovery time (t_rr) is 230–350 ns, and reverse recovery charge (Q_rr) is 1.7–2.6 μC under specified test conditions (I_F = 9.0 A, dI/dt = 100 A/μs). These parameters make the IRL630PBF-BE3 suitable for freewheeling and synchronous rectification in medium-frequency switching applications.

What is the package type and mounting specification for IRL630PBF-BE3?

The IRL630PBF-BE3 uses the TO-220AB package with an insulated tab, three leads (G, D, S), and standardized 6–32 or M3 screw mounting. The datasheet specifies a maximum mounting torque of 10 lbf·in (1.1 N·m) and soldering peak temperature of 300 °C for 10 seconds. Thermal resistance from junction to case (R_thJC) is 1.7 °C/W, confirming efficient heat transfer to an external heatsink via the drain-connected tab. This package is confirmed for IRL630PBF-BE3 in the Ordering Information and Package Outline sections of the Vishay datasheet.

IRL630PBF-BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.4A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRL630PBF-BE3 FAQ

1.How can I place an order for IRL630PBF-BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL630PBF-BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL630PBF-BE3 reliable?

The price and inventory of IRL630PBF-BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL630PBF-BE3 is usually 5 days.

3.What payment methods are accepted for IRL630PBF-BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL630PBF-BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL630PBF-BE3?

IRL630PBF-BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL630PBF-BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL630PBF-BE3?

For technical support, including IRL630PBF-BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL630PBF-BE3 requirements.

6.How does Aetrix verify that IRL630PBF-BE3 is sourced from the original manufacturer or authorized distributors?

All IRL630PBF-BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL630PBF-BE3 meets industry standards.

7.What is the process for return or replacement of IRL630PBF-BE3?

All IRL630PBF-BE3 units undergo pre-shipment inspection (PSI). If there is an issue with IRL630PBF-BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL630PBF-BE3 part is unused and in its original packaging.

Return procedure for IRL630PBF-BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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