Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL630SPBF

Name: IRL630SPBF
Brand: Vishay Siliconix
SKU: IRL630SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRL630SPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL630SPBF.pdf

Description:: MOSFET N-CH 200V 9A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,760

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRL630SPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V V_DS, 9.0 A continuous drain current at T_C = 25 °C, and R_DS(on) = 0.40 Ω at V_GS = 5 V. It supports fast switching in high-current DC-DC converters and motor control stages where low gate drive voltage (4–5 V) and rugged avalanche capability are required.

For engineers reviewing the IRL630SPBF datasheet, IRL630SPBF pinout, IRL630SPBF application, or IRL630SPBF equivalent, this page delivers verified electrical parameters, thermal derating behavior, body diode recovery metrics, and surface-mount layout guidance specific to the D2PAK footprint and PCB-mount power dissipation limits.

Technical Context

The IRL630SPBF uses third-generation trench-gate silicon technology optimized for low R_DS(on) and fast switching with minimal gate charge (Q_g = 40 nC). Its logic-level gate threshold (V_GS(th) = 1.0–2.0 V) enables direct drive from microcontrollers and PWM controllers without level-shifting circuitry.

It features repetitive avalanche rating (E_AR = 7.4 mJ), dynamic dv/dt immunity (5.0 V/ns), and integrated body diode with t_rr = 230–350 ns and Q_rr = 1.7–2.6 μC - critical for snubberless flyback and synchronous rectification topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 170 V DC in offline SMPS or 48 V industrial bus systems with margin.
R_DS(on) @ V_GS = 5 V	0.40 Ω - enables <1.8 W conduction loss at 9 A, suitable for thermally constrained SMT layouts.
Q_g	40 nC - determines gate driver current requirement (~2 A peak for 20 ns rise time with 10 Ω R_g).
I_D (continuous, T_C = 25 °C)	9.0 A - defines maximum steady-state current when mounted on heatsink or thermally enhanced PCB.
E_AS	250 mJ - specifies single-pulse unclamped inductive energy handling without failure, supporting robust overcurrent protection.
t_rr (body diode)	230–350 ns - impacts reverse recovery losses in hard-switched topologies; requires careful snubber design above 100 kHz.
R_thJC	1.7 °C/W - enables junction-to-case thermal path estimation for heatsink sizing when using thermal pad mounting.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain thermal pad; 3-pin configuration (G-D-S), lead (Pb)-free and halogen-free construction per JEDEC TO-263AB outline.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Logic-level control input; accepts 4–5 V drive; max ±10 V rating prevents oxide damage during transient events.
D	Drain	Main high-side power terminal; electrically connected to thermal pad; must be routed with low-inductance copper pour for switching stability.
S	Source	Power return node; referenced to gate drive ground; source inductance (L_S = 7.5 nH) affects turn-on delay and ringing.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4 V, eliminating need for gate driver ICs in 3.3 V/5 V MCU-based systems.
Repetitive avalanche rated	Withstands repeated inductive switching stress (I_AR = 9.0 A, E_AR = 7.4 mJ), enabling reliable operation in relay/snubberless designs.
Dynamic dv/dt immunity	Rated for 5.0 V/ns - suppresses false turn-on during high dV/dt transients in half-bridge configurations.
150 °C operating junction	Supports extended thermal margin in sealed enclosures or high-ambient industrial environments without derating below 100 °C case temp.
Low Q_gd/Q_g ratio	Q_gd = 24 nC of total Q_g = 40 nC (60%) - indicates strong Miller immunity and stable hard-switching behavior.

Applications

Motor Drive Stage	DC-DC Synchronous Rectifier
Use Scenario: Low-voltage BLDC motor phase leg in battery-powered tools or fans, driven by 5 V PWM controller. IC Role / Device Role / Timing Role: High-side or low-side switching element; handles bidirectional current during PWM commutation and regenerative braking. Use Value: Logic-level gate enables direct MCU drive; 9.0 A rating supports >100 W mechanical output; body diode t_rr minimizes shoot-through risk during dead-time transitions.	Use Scenario: Secondary-side switch in isolated 48 V–12 V buck-derived DC-DC converter for telecom or server POL supplies. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; timed to conduct only during transformer secondary voltage polarity reversal. Use Value: R_DS(on) = 0.40 Ω cuts conduction loss vs. 0.5 V Schottky drop; Q_rr = 1.7–2.6 μC reduces reverse recovery spikes and EMI in 300–500 kHz designs.
Industrial AC-DC Front-End	Overcurrent Protection Switch
Use Scenario: Active OR-ing FET or hold-up switch in 200 V-rated industrial AC-DC PFC front-end with wide-input range. IC Role / Device Role / Timing Role: High-voltage series pass switch controlling bulk capacitor charging and isolation during fault conditions. Use Value: 200 V V_DS withstands full rectified line peaks; avalanche rating protects against line surge-induced inductive kickback without external clamping.	Use Scenario: Solid-state load switch in programmable logic controller (PLC) output module protecting 24 V DC field circuits. IC Role / Device Role / Timing Role: Current-limiting and fault-interrupting power switch; activated/deactivated under firmware control with current-sense feedback. Use Value: R_DS(on) = 0.40 Ω enables accurate current sensing via inline shunt; 150 °C T_J rating ensures reliability across -40 to +85 °C ambient industrial temperature range.

Motor Drive Stage

DC-DC Synchronous Rectifier

Use Scenario: Low-voltage BLDC motor phase leg in battery-powered tools or fans, driven by 5 V PWM controller.

IC Role / Device Role / Timing Role: High-side or low-side switching element; handles bidirectional current during PWM commutation and regenerative braking.

Use Value: Logic-level gate enables direct MCU drive; 9.0 A rating supports >100 W mechanical output; body diode t_rr minimizes shoot-through risk during dead-time transitions.

Use Scenario: Secondary-side switch in isolated 48 V–12 V buck-derived DC-DC converter for telecom or server POL supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; timed to conduct only during transformer secondary voltage polarity reversal.

Use Value: R_DS(on) = 0.40 Ω cuts conduction loss vs. 0.5 V Schottky drop; Q_rr = 1.7–2.6 μC reduces reverse recovery spikes and EMI in 300–500 kHz designs.

Industrial AC-DC Front-End

Overcurrent Protection Switch

Use Scenario: Active OR-ing FET or hold-up switch in 200 V-rated industrial AC-DC PFC front-end with wide-input range.

IC Role / Device Role / Timing Role: High-voltage series pass switch controlling bulk capacitor charging and isolation during fault conditions.

Use Value: 200 V V_DS withstands full rectified line peaks; avalanche rating protects against line surge-induced inductive kickback without external clamping.

Use Scenario: Solid-state load switch in programmable logic controller (PLC) output module protecting 24 V DC field circuits.

IC Role / Device Role / Timing Role: Current-limiting and fault-interrupting power switch; activated/deactivated under firmware control with current-sense feedback.

Use Value: R_DS(on) = 0.40 Ω enables accurate current sensing via inline shunt; 150 °C T_J rating ensures reliability across -40 to +85 °C ambient industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF630NPBF	Higher V_GS(th) (2–4 V), higher R_DS(on) (0.35 Ω @ 10 V), not logic-level; requires 10 V gate drive.	Not suitable for 3.3 V/5 V logic interfaces; better for 12 V gate-driven industrial inverters.	Select only if gate drive voltage ≥10 V and lower cost outweighs need for logic compatibility.
STP20NM60FD	600 V rating, lower R_DS(on) (0.30 Ω @ 10 V), but V_GS(th) = 2–4 V; not logic-level; different D²PAK pinout (G-D-S vs. G-S-D).	Targeted at high-voltage PFC and SMPS primary side; incompatible pinout prevents drop-in replacement.	Consider only for new 600 V designs requiring higher blocking voltage; not a functional substitute for IRL630SPBF.

Compared with IRL630SPBF, IRF630NPBF demands higher gate voltage and offers no logic-level advantage, while STP20NM60FD provides higher voltage rating but lacks logic compatibility and has non-interchangeable pinout - neither qualifies as pin-compatible, making IRL630SPBF uniquely suited for low-voltage, surface-mount, microcontroller-driven switching.

Availability

IRL630SPBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power switching applications requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for IRL630SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and manufacturability.

The IRL630SPBF belongs to Vishay's logic-level power MOSFET family designed specifically for high-current, surface-mount switching in space-constrained industrial and consumer power systems where low gate drive voltage and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current for IRL630SPBF at 100 °C case temperature?

The IRL630SPBF supports 5.7 A continuous drain current at T_C = 100 °C, per its absolute maximum ratings table. This reflects linear derating from 9.0 A at 25 °C using the specified 0.59 W/°C factor. Designers must verify PCB copper area and thermal interface to sustain this current without exceeding 150 °C junction temperature. The IRL630SPBF datasheet confirms this value under "Continuous drain current" with footnote indicating TC = 100 °C condition.

Does IRL630SPBF have avalanche capability, and how is it rated?

Yes, the IRL630SPBF is repetitively avalanche rated with E_AR = 7.4 mJ and I_AR = 9.0 A, and single-pulse avalanche energy E_AS = 250 mJ. These values are measured under defined test conditions (V_DD = 25 V, L = 4.6 mH, R_g = 25 Ω) and reflect capability to absorb inductive energy without failure. The IRL630SPBF datasheet specifies these in the Absolute Maximum Ratings table and Figure 12c.

What is the gate threshold voltage range for IRL630SPBF, and why does it matter for logic-level operation?

The IRL630SPBF has a gate-source threshold voltage V_GS(th) of 1.0–2.0 V at I_D = 250 μA, confirming true logic-level behavior. This allows full enhancement with standard 3.3 V or 5 V digital outputs, eliminating external level shifters. The IRL630SPBF specification sheet lists this in the Static Characteristics table, and its low V_GS(th) directly enables compatibility with microcontrollers and low-voltage gate drivers.

Can IRL630SPBF be used in surface-mount applications with standard reflow profiles?

Yes, the IRL630SPBF is qualified for surface-mount assembly with peak reflow temperature up to 300 °C for 10 seconds, per its soldering recommendations. Its D2PAK (TO-263) package is designed for thermal-pad soldering onto FR-4 PCBs, and the IRL630SPBF datasheet explicitly states this in the "Soldering recommendations" section with reference to JEDEC J-STD-020.

How does the body diode performance of IRL630SPBF compare to discrete Schottky diodes in synchronous rectification?

The IRL630SPBF body diode has V_SD = 2.0 V at I_S = 9.0 A and t_rr = 230–350 ns, which is slower and higher-drop than most Schottky diodes but enables integrated synchronous rectification without extra components. Its Q_rr = 1.7–2.6 μC must be managed via timing control to avoid cross-conduction. The IRL630SPBF datasheet provides these values in the "Drain-Source Body Diode Characteristics" table and Figure 7.

IRL630SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 5.4A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 74W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL630SPBF FAQ

1.How can I place an order for IRL630SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL630SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL630SPBF reliable?

The price and inventory of IRL630SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL630SPBF is usually 5 days.

3.What payment methods are accepted for IRL630SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL630SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL630SPBF?

IRL630SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL630SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL630SPBF?

For technical support, including IRL630SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL630SPBF requirements.

6.How does Aetrix verify that IRL630SPBF is sourced from the original manufacturer or authorized distributors?

All IRL630SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL630SPBF meets industry standards.

7.What is the process for return or replacement of IRL630SPBF?

All IRL630SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL630SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL630SPBF part is unused and in its original packaging.

Return procedure for IRL630SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …