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Vishay Siliconix IRL630STRLPBF
- Part No.:
- IRL630STRLPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL630STRLPBF.pdf
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,641
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Product details
Overview
IRL630STRLPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V drain-source voltage, 9.0 A continuous drain current at TC = 25 °C, and 0.40 Ω RDS(on) at VGS = 5 V. It supports high-current switching in DC-DC converters and motor drives with repetitive avalanche capability and 150 °C operation.
For engineers reviewing the IRL630STRLPBF datasheet, IRL630STRLPBF pinout, IRL630STRLPBF application, or IRL630STRLPBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low RDS(on) at 4–5 V, avalanche ruggedness (EAS = 250 mJ), thermal performance on PCB mount (RthJA = 40 °C/W), and surface-mount D2PAK packaging for high-power density designs.
Technical Context
This MOSFET employs third-generation silicon technology optimized for fast switching and low conduction loss. Its design integrates a robust body diode with trr = 230–350 ns and Qrr = 1.7–2.6 μC, enabling efficient hard-switched and synchronous rectification topologies.
The device features dynamic dv/dt immunity (5.0 V/ns), specified gate charge parameters (Qg = 40 nC, Qgd = 24 nC), and linear SOA operation up to 100 ms pulses - critical for unclamped inductive load handling in industrial motor control and UPS systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports input rails up to 170 V DC in offline SMPS and battery-powered industrial equipment. |
| RDS(on) @ VGS = 5 V | 0.40 Ω - Enables <1.5 W conduction loss at 9 A, reducing heatsink requirements in compact PCB layouts. |
| ID Continuous @ TC = 25 °C | 9.0 A - Delivers full-rated current without derating when mounted on thermally enhanced copper area. |
| Qg | 40 nC - Determines gate driver power requirement; compatible with standard logic-level drivers (e.g., TC4427). |
| EAS | 250 mJ - Allows safe single-pulse energy absorption during inductive turn-off, eliminating need for external snubbers. |
| TJ Range | –55 to +150 °C - Qualified for extended-temperature industrial and automotive under-hood auxiliary circuits. |
| dv/dt Rating | 5.0 V/ns - Resists false triggering in noisy EMI environments such as variable-frequency drives and welding inverters. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); 10.67 mm × 9.65 mm footprint; 15.88 mm height; RoHS-compliant lead-free and halogen-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Accepts logic-level signals (1.0–2.0 V threshold); requires ≤40 nC total charge for full enhancement. |
| D (Drain) | High-side power terminal | Connected to internal die backside and exposed thermal pad; must be soldered to large copper pour for thermal management. |
| S (Source) | Reference/return path | Provides common return for gate drive and load current; defines local ground reference for driver IC placement. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.0–2.0 V enables direct interface with 3.3 V/5 V microcontrollers and PWM controllers without level-shifting. |
| Repetitive avalanche rated | Rated for unlimited repetitive avalanche events (IAR = 9.0 A, EAR = 7.4 mJ), enhancing reliability in inductive switching applications. |
| Dynamic dv/dt immunity | 5.0 V/ns rating prevents spurious turn-on during high-slew-rate transients in half-bridge and LLC resonant converters. |
| Low RDS(on) at 4 V | 0.50 Ω at VGS = 4 V ensures stable on-state performance even with marginal gate drive voltage drop across PCB traces. |
| 150 °C operation | Maximum junction temperature rating allows deployment in sealed enclosures or high-ambient environments without forced air cooling. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver High-Side |
|---|---|
Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 200 kHz in telecom power shelf. IC Role / Device Role / Timing Role: High-side main switch controlling power delivery; handles 9 A peak inductor current with minimal conduction loss. Use Value: 0.40 Ω RDS(on) reduces I²R losses by >30% vs. legacy 0.65 Ω alternatives, improving efficiency from 92% to 94.5% at full load. |
Use Scenario: 24 V battery-powered robotic arm with dual H-bridge driving 5 A nominal brushed motors. IC Role / Device Role / Timing Role: High-side switch in half-bridge topology; commutates motor direction and enables regenerative braking via body diode conduction. Use Value: Body diode trr = 230–350 ns and Qrr = 1.7–2.6 μC minimize switching loss and voltage overshoot during freewheeling transitions. |
| Uninterruptible Power Supply (UPS) Inverter | Industrial Solenoid Driver |
Use Scenario: 120 V AC output in-line UPS using full-bridge inverter with 50 kHz SPWM modulation. IC Role / Device Role / Timing Role: Low-side switch in bridge leg; sustains repetitive 200 V bus transients and handles 8 A RMS load current. Use Value: 250 mJ single-pulse avalanche energy absorbs line surge events without failure, eliminating need for external clamping diodes. |
Use Scenario: 24 V solenoid actuator control in factory automation PLC output module with 100 ms on-time duty cycle. IC Role / Device Role / Timing Role: Direct-drive switch replacing mechanical relay; provides precise timing control and zero-contact bounce. Use Value: Logic-level gate drive allows direct connection to 3.3 V FPGA I/O pins, reducing BOM count and board space vs. opto-isolated driver solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF630NPbF | Higher VGS(th) (2.0–4.0 V), higher RDS(on) (0.35 Ω @ 10 V), not logic-level; TO-220 package. | Requires 10 V gate drive; unsuitable for 3.3 V/5 V MCU direct drive; better for fixed 12 V supply systems. | Select IRL630STRLPBF when logic-level compatibility, lower thermal resistance, or surface-mount assembly is required. |
| STP20NM60FD | 600 V rating, 0.30 Ω RDS(on) @ 10 V, SuperMESH™ technology; TO-220FP package; no logic-level gate. | Designed for high-voltage PFC and flyback primary switches; incompatible with 5 V gate drive and D2PAK layout. | Choose IRL630STRLPBF for 200 V-class, logic-compatible, surface-mount applications where thermal density matters more than voltage headroom. |
Compared with IRF630NPbF and STP20NM60FD, the IRL630STRLPBF uniquely combines logic-level gate drive, D2PAK thermal performance, and 200 V/9 A rating - making it optimal for space-constrained, low-voltage-control industrial power stages where gate drive simplicity and PCB thermal management are prioritized.
Availability
IRL630STRLPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for IRL630STRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, efficiency, and reliability.
The IRL630STRLPBF belongs to Vishay's third-generation logic-level power MOSFET family, engineered for high-current, surface-mount switching in industrial motor control, telecom power, and embedded power conversion where low gate drive voltage and avalanche tolerance are essential.
FAQ
What is the maximum gate-source voltage rating for IRL630STRLPBF?
The IRL630STRLPBF has a maximum gate-source voltage (VGS) rating of ±10 V. Exceeding this limit risks permanent gate oxide damage. Designers should ensure gate drive circuits include clamping (e.g., Zener diodes) or limiting resistors to prevent overshoot during fast switching transitions. This specification is confirmed in the Absolute Maximum Ratings table of Vishay document 90390.
Does IRL630STRLPBF support avalanche operation in repetitive mode?
Yes, the IRL630STRLPBF is explicitly rated for repetitive avalanche operation with EAR = 7.4 mJ and IAR = 9.0 A. This capability is validated per test condition "a" in the Absolute Maximum Ratings section and enables reliable use in inductive load switching without external protection. The device's ruggedized die design sustains repeated energy pulses within these limits.
What is the RDS(on) value of IRL630STRLPBF at VGS = 4 V?
The IRL630STRLPBF specifies RDS(on) = 0.50 Ω maximum at VGS = 4 V and ID = 4.5 A, as published in the Static Specifications table (Document 90390, page 2). This confirms true logic-level behavior, allowing robust conduction even with marginal gate drive voltage due to PCB trace resistance or driver output impedance.
Is IRL630STRLPBF RoHS-compliant and halogen-free?
Yes, the IRL630STRLPBF is both RoHS-compliant and halogen-free, as indicated by the "-GE3" suffix in its Vishay ordering variants (e.g., SiHL630STRL-GE3) and confirmed in the Material Categorization note referencing www.vishay.com/doc?99912. The "PbF" suffix denotes lead-free termination, consistent with EU RoHS Directive 2011/65/EU and JEDEC JS709 standards.
What thermal resistance does IRL630STRLPBF exhibit when mounted on a PCB?
When mounted on a 1" square FR-4 PCB, the IRL630STRLPBF achieves a maximum junction-to-ambient thermal resistance (RthJA) of 40 °C/W, per the Thermal Resistance Ratings table. This value assumes standard recommended pad layout per Vishay AN826 and enables ~3.1 W power dissipation at TA = 25 °C - critical for estimating board-level thermal design margins.
IRL630STRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL630STRLPBF FAQ
1.How can I place an order for IRL630STRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL630STRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL630STRLPBF reliable?
The price and inventory of IRL630STRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL630STRLPBF is usually 5 days.
3.What payment methods are accepted for IRL630STRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL630STRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL630STRLPBF?
IRL630STRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL630STRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL630STRLPBF?
For technical support, including IRL630STRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL630STRLPBF requirements.
6.How does Aetrix verify that IRL630STRLPBF is sourced from the original manufacturer or authorized distributors?
All IRL630STRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL630STRLPBF meets industry standards.
7.What is the process for return or replacement of IRL630STRLPBF?
All IRL630STRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL630STRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL630STRLPBF part is unused and in its original packaging.
Return procedure for IRL630STRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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