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Vishay Siliconix IRL630STRRPBF
- Part No.:
- IRL630STRRPBF
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRL630STRRPBF.pdf
- Description:
- MOSFET N-CH 200V 9A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,660
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Product details
Overview
IRL630STRRPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V VDS, 9.0 A continuous drain current at TC = 25 °C, and 0.40 Ω RDS(on) at VGS = 5 V. It supports fast switching in DC-DC converters and motor control circuits with repetitive avalanche capability and 150 °C operation.
For engineers reviewing the IRL630STRRPBF datasheet, IRL630STRRPBF pinout, IRL630STRRPBF application, or IRL630STRRPBF equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low on-resistance at 4–5 V gate bias, surface-mount thermal performance (RthJC = 1.7 °C/W), and unclamped inductive switching robustness (EAS = 250 mJ).
Technical Context
This MOSFET employs third-generation silicon technology optimized for high-current, medium-voltage switching with ruggedized die design. Its dynamic dv/dt rating (5.0 V/ns) and specified body diode recovery (trr = 230–350 ns, Qrr = 1.7–2.6 μC) support reliable operation in hard-switched topologies.
The device features a single N-channel configuration with integrated body diode, characterized for operation up to 150 °C junction temperature. Gate charge parameters (Qg = 40 nC, Qgd = 24 nC) indicate moderate drive strength requirements, while internal source/drain inductances (LS = 7.5 nH, LD = 4.5 nH) are documented for layout-sensitive high-speed designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Supports bus voltages up to 160 V DC in industrial power supplies and motor drives. |
| RDS(on) @ VGS = 5 V | 0.40 Ω - Enables <1.8 W conduction loss at 9.0 A, suitable for thermally constrained PCB-mount applications. |
| Qg | 40 nC - Requires ~0.4 mC total gate charge per switching cycle; informs driver IC selection and gate resistor sizing. |
| ID (continuous, TC = 25 °C) | 9.0 A - Delivers full rated current when mounted on heatsink or thermally enhanced PCB (e.g., 1" FR-4 square). |
| EAS | 250 mJ - Withstands single-pulse inductive energy events without failure, critical for relay/snubberless flyback designs. |
| trr / Qrr | 230–350 ns / 1.7–2.6 μC - Quantifies body diode reverse recovery behavior; impacts switching loss and EMI in synchronous rectification. |
| TJ range | −55 to +150 °C - Qualified for extended-temperature industrial and automotive under-hood auxiliary systems. |
Pinout & Package
D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (G, D, S); JEDEC-compliant outline; recommended minimum pad dimensions provided in Vishay AN826.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Logic-compatible input (VGS(th) = 1.0–2.0 V); requires low-impedance drive due to 40 nC Qg. |
| D (Drain) | High-side power terminal | Connected to exposed copper tab; primary thermal path to PCB heatsink; carries full load current. |
| S (Source) | Reference/return terminal | Common return for gate drive and load current; internal source inductance (7.5 nH) affects high-di/dt ringing. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4–5 V, eliminating need for gate boosters in 5 V microcontroller-driven systems. |
| Repetitive avalanche rated | Rated for sustained unclamped inductive switching (IAR = 9.0 A, EAR = 7.4 mJ), enabling robustness in solenoid and relay drivers. |
| Dynamic dv/dt immunity | Guaranteed 5.0 V/ns threshold prevents false turn-on during high-slew-rate voltage transients in half-bridge configurations. |
| 150 °C operation | Rated for continuous use at maximum junction temperature, supporting compact thermal design in sealed enclosures. |
| RoHS-compliant & halogen-free | Meets material compliance standards per Vishay Doc. #99912; suitable for environmentally regulated industrial equipment. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 10 A to FPGA or ASIC core rails. IC Role / Device Role / Timing Role: Main power switch controlling energy transfer into output inductor; operates at 100–500 kHz. Use Value: Low RDS(on) (0.40 Ω) minimizes conduction loss; logic-level gate enables direct drive from PWM controller outputs. |
Use Scenario: H-bridge driver for 24 V brushed motors in automated gate actuators and HVAC dampers. IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional current up to 9 A peak. Use Value: Repetitive avalanche rating absorbs inductive kickback during PWM commutation; 150 °C rating ensures reliability in enclosed housings. |
| Industrial Relay Replacement | LED Constant-Current Driver |
Use Scenario: Solid-state replacement for electromechanical relays in PLC output modules switching 24–120 V AC/DC loads. IC Role / Device Role / Timing Role: Load switch isolating control logic from high-voltage field side; duty-cycled or latched operation. Use Value: 200 V VDS withstands 120 V AC peak (170 V); dv/dt immunity prevents spurious turn-on during line transients. |
Use Scenario: Constant-current dimmable LED driver for commercial signage operating from 36 V DC bus. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 9 A. Use Value: Low RDS(on) reduces heat generation in linear mode; body diode characteristics support freewheeling in buck-derived topologies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF20 | 200 V, 16 A, RDS(on) = 0.18 Ω @ VGS = 10 V; not logic-level (VGS(th) = 2–4 V); TO-220 package. | Higher current capacity but requires 10 V gate drive; unsuitable for 3.3/5 V MCU direct drive without level shift. | Select when higher current and lower RDS(on) justify external gate driver and through-hole mounting. |
| IRF640NPbF | 200 V, 18 A, RDS(on) = 0.18 Ω @ VGS = 10 V; VGS(th) = 2–4 V; TO-220 package; no avalanche rating. | Lacks repetitive avalanche qualification and logic-level compatibility; higher gate charge (Qg = 67 nC). | Choose only for cost-sensitive, non-avalanche, fixed-gate-drive applications where thermal margin permits larger package. |
Compared with STP16NF20 and IRF640NPbF, the IRL630STRRPBF offers verified logic-level operation, surface-mount D2PAK packaging, and guaranteed repetitive avalanche performance-making it uniquely suited for space-constrained, microcontroller-driven, inductive-load switching where gate drive simplicity and ruggedness are prioritized over ultra-low RDS(on).
Availability
IRL630STRRPBF is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and solid-state relay replacement requiring stable component supply and long-term production continuity.
Supply support for IRL630STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.
The IRL630STRRPBF belongs to Vishay's logic-level power MOSFET product line, engineered for direct interface with low-voltage digital controllers in compact, thermally demanding power systems.
FAQ
What is the maximum gate-source voltage rating for IRL630STRRPBF?
The IRL630STRRPBF has a maximum gate-source voltage rating of ±10 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits-especially those with bootstrap or level-shifting stages-clamp VGS within this range. The device is specified for RDS(on) at VGS = 4 V and 5 V, confirming robust enhancement well below the absolute maximum.
Does IRL630STRRPBF support avalanche operation in continuous mode?
The IRL630STRRPBF is rated for repetitive avalanche energy (EAR = 7.4 mJ) and repetitive avalanche current (IAR = 9.0 A), confirming validated capability for repeated unclamped inductive switching events. However, continuous avalanche operation is not supported; each event must be limited by pulse width and duty cycle to prevent junction overheating, as defined in Figure 11 of the datasheet.
What is the thermal resistance from junction to case (RthJC) for IRL630STRRPBF?
The maximum junction-to-case (drain) thermal resistance for IRL630STRRPBF is 1.7 °C/W. This value applies when the device is mounted with proper thermal interface material to a heatsink or copper pour. It enables calculation of junction temperature rise above case temperature (ΔTJ = PD × RthJC) for reliability analysis in high-power-density layouts.
Can IRL630STRRPBF be used with 3.3 V microcontroller GPIOs?
Yes, IRL630STRRPBF is a logic-level MOSFET with gate threshold voltage VGS(th) specified from 1.0 V to 2.0 V, ensuring reliable turn-on with 3.3 V drive. At VGS = 3.3 V, RDS(on) increases versus the 5 V spec (0.40 Ω), but remains sufficiently low for many medium-current applications-verify using the normalized RDS(on) vs. VGS curve in Figure 4 of the datasheet.
Is the body diode in IRL630STRRPBF suitable for synchronous rectification?
The body diode of IRL630STRRPBF exhibits trr = 230–350 ns and Qrr = 1.7–2.6 μC at TJ = 25 °C, which is moderate for a 200 V MOSFET. While usable in non-critical synchronous rectifier roles, its recovery characteristics are less optimized than dedicated sync-FETs; designers should evaluate switching loss and shoot-through risk in high-frequency (>200 kHz) applications before selecting IRL630STRRPBF for this function.
IRL630STRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 5V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 5.4A, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 74W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
IRL630STRRPBF FAQ
1.How can I place an order for IRL630STRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRL630STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRL630STRRPBF reliable?
The price and inventory of IRL630STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL630STRRPBF is usually 5 days.
3.What payment methods are accepted for IRL630STRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL630STRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRL630STRRPBF?
IRL630STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRL630STRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRL630STRRPBF?
For technical support, including IRL630STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL630STRRPBF requirements.
6.How does Aetrix verify that IRL630STRRPBF is sourced from the original manufacturer or authorized distributors?
All IRL630STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL630STRRPBF meets industry standards.
7.What is the process for return or replacement of IRL630STRRPBF?
All IRL630STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL630STRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRL630STRRPBF part is unused and in its original packaging.
Return procedure for IRL630STRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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