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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL640S

Name: IRL640S
Brand: Vishay Siliconix
SKU: IRL640S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL640S

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL640S.pdf

Description:: MOSFET N-CH 200V 17A D2PAK

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Product details

Overview

IRL640S from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V drain-source voltage, 17 A continuous drain current at 25 °C, and 0.18 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and is optimized for high-current DC-DC converters and motor control circuits.

For engineers reviewing the IRL640S datasheet, IRL640S pinout, IRL640S application, or IRL640S equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge characteristics, body diode recovery behavior, and validated alternative parts for industrial power design validation and BOM optimization.

Technical Context

The IRL640S employs third-generation trench-gate silicon technology to achieve low on-resistance with logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V). Its dynamic dV/dt rating of 5.0 V/ns and unclamped inductive switching capability (E_AS = 580 mJ) support robust operation in hard-switched topologies.

Designed for surface-mount high-power applications, the device integrates a fast-recovery body diode (t_rr = 310–470 ns, Q_rr = 3.2–4.8 μC) and features low internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH), enabling clean turn-on/turn-off waveforms under R_g = 4.6 Ω test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus designs with 15 % margin for transients
R_DS(on) @ V_GS = 5 V	0.18 Ω - enables ≤3.1 W conduction loss at 13.5 A (typical motor phase current)
Q_g	66 nC - determines gate driver power requirement (~1.3 mW average at 100 kHz, V_GS swing 0–5 V)
I_D (continuous, T_C = 25 °C)	17 A - usable in PCB-mounted heatsinkless designs up to ~3.1 W dissipation
E_AS	580 mJ - withstands single-pulse inductive energy without failure in flyback or H-bridge freewheeling
t_rr	310–470 ns - limits reverse recovery losses during synchronous rectification or bidirectional switching
R_thJC	1.0 °C/W - enables direct thermal coupling to heatsink via exposed drain pad for >100 W power handling

Pinout & Package

D2PAK (TO-263) package with exposed drain pad (Pin 2), standard 3-pin configuration: Gate (Pin 1), Drain (Pin 2), Source (Pin 3). Thermal pad soldered to PCB provides primary heat path; mechanical mounting optional.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Logic-level input (V_GS(th) ≤ 2.0 V); requires <1.2 Ω series resistance to suppress ringing with 66 nC Q_g
Pin 2 (D)	Drain terminal / thermal pad	Electrically and thermally connected to exposed copper pad; must be routed to low-impedance ground/power plane
Pin 3 (S)	Source terminal	Reference node for gate drive; internal source inductance (7.5 nH) affects switching waveform fidelity

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.27 Ω), compatible with 3.3 V/5 V microcontrollers without level-shifting
Repetitive avalanche rated	Rated for I_AR = 10 A and E_AR = 13 mJ - enables reliable operation in inductive load switching without external snubbers
Dynamic dV/dt immunity	5.0 V/ns - prevents false turn-on during high dv/dt events in half-bridge configurations
Fast body diode recovery	t_rr = 310–470 ns with Q_rr = 3.2–4.8 μC - reduces cross-conduction loss in synchronous rectifiers and bidirectional converters
Surface-mount D2PAK package	Supports >100 W power dissipation with external heatsink; footprint matches JEDEC TO-263AB standard for layout reuse

Applications

DC-DC Converter Primary Switch	Brushed DC Motor High-Side Driver
Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 100 kHz. IC Role / Device Role / Timing Role: High-side main switch handling peak currents up to 17 A with minimal conduction loss. Use Value: 0.18 Ω R_DS(on) at 5 V gate drive reduces full-load conduction loss to <5.2 W, improving efficiency by ≥1.8 % vs. standard 5 V-threshold MOSFETs.	Use Scenario: 24 V brushed motor drive with PWM frequency of 20 kHz and stall current up to 15 A. IC Role / Device Role / Timing Role: High-side N-channel switch controlled directly by MCU GPIO, eliminating need for high-side driver IC. Use Value: Logic-level threshold (1.0–2.0 V) ensures full enhancement using 3.3 V MCU outputs, reducing component count and board space.
Uninterruptible Power Supply (UPS) Inverter Stage	Industrial Solenoid Driver
Use Scenario: Half-bridge inverter stage converting 350 V DC bus to 230 V AC output at 50 Hz with dead-time control. IC Role / Device Role / Timing Role: Low-side switch subjected to high dV/dt during complementary switching and body diode commutation. Use Value: 5.0 V/ns dV/dt rating and 470 ns max t_rr prevent shoot-through and reduce switching loss during zero-voltage transitions.	Use Scenario: 24 V solenoid actuator with 200 ms on-time, requiring surge current handling and inductive kick clamping. IC Role / Device Role / Timing Role: Low-side switch absorbing stored inductive energy via integrated avalanche-rated body diode. Use Value: 580 mJ single-pulse avalanche energy rating allows safe operation without external TVS, simplifying protection circuitry.

DC-DC Converter Primary Switch

Brushed DC Motor High-Side Driver

Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 100 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling peak currents up to 17 A with minimal conduction loss.

Use Value: 0.18 Ω R_DS(on) at 5 V gate drive reduces full-load conduction loss to <5.2 W, improving efficiency by ≥1.8 % vs. standard 5 V-threshold MOSFETs.

Use Scenario: 24 V brushed motor drive with PWM frequency of 20 kHz and stall current up to 15 A.

IC Role / Device Role / Timing Role: High-side N-channel switch controlled directly by MCU GPIO, eliminating need for high-side driver IC.

Use Value: Logic-level threshold (1.0–2.0 V) ensures full enhancement using 3.3 V MCU outputs, reducing component count and board space.

Uninterruptible Power Supply (UPS) Inverter Stage

Industrial Solenoid Driver

Use Scenario: Half-bridge inverter stage converting 350 V DC bus to 230 V AC output at 50 Hz with dead-time control.

IC Role / Device Role / Timing Role: Low-side switch subjected to high dV/dt during complementary switching and body diode commutation.

Use Value: 5.0 V/ns dV/dt rating and 470 ns max t_rr prevent shoot-through and reduce switching loss during zero-voltage transitions.

Use Scenario: 24 V solenoid actuator with 200 ms on-time, requiring surge current handling and inductive kick clamping.

IC Role / Device Role / Timing Role: Low-side switch absorbing stored inductive energy via integrated avalanche-rated body diode.

Use Value: 580 mJ single-pulse avalanche energy rating allows safe operation without external TVS, simplifying protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF20	200 V, 16 A, R_DS(on) = 0.19 Ω @ 10 V; gate threshold 2.0–4.0 V; no avalanche rating	Requires 10 V gate drive for optimal R_DS(on); unsuitable for logic-level MCU interfaces or unclamped inductive loads	Select when higher gate voltage rail is available and avalanche robustness is not required
IRF640NPbF	200 V, 18 A, R_DS(on) = 0.18 Ω @ 10 V; V_GS(th) = 2.0–4.0 V; TO-220 package	Not logic-level; needs gate driver for 3.3 V control; through-hole mounting only; higher R_thJA (62 °C/W)	Select for legacy through-hole designs where gate drive voltage ≥10 V is available and thermal budget permits

Compared with STP16NF20 and IRF640NPbF, the IRL640S uniquely combines logic-level drive, D2PAK thermal performance, and certified repetitive avalanche capability-making it the only option among the three suitable for compact, MCU-driven, inductive-load applications without external gate drivers or snubbers.

Availability

IRL640S is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, UPS inverters, and solenoid control systems requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for IRL640S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRL640S belongs to Vishay's logic-level power MOSFET product line, engineered for high-efficiency, surface-mount switching in space-constrained power conversion and motion control systems.

FAQ

What is the maximum continuous drain current for IRL640S at 100 °C case temperature?

The IRL640S supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be applied when ambient or heatsink conditions raise case temperature above 25 °C. Designers should verify junction temperature using R_thJC = 1.0 °C/W and actual power dissipation to ensure T_J ≤ 150 °C.

Does IRL640S have avalanche capability, and is it rated for repetitive use?

Yes, the IRL640S is explicitly rated for repetitive avalanche operation: I_AR = 10 A and E_AR = 13 mJ per pulse, with pulse width limited by maximum junction temperature. This is confirmed in the Absolute Maximum Ratings table and supported by Fig. 12c in the datasheet. The IRL640S does not require external avalanche protection in properly designed inductive switching circuits.

What is the gate threshold voltage range for IRL640S, and how does it enable logic-level operation?

The IRL640S has a gate threshold voltage V_GS(th) of 1.0–2.0 V at I_D = 250 μA, enabling full enhancement with 3.3 V or 5 V logic signals. At V_GS = 4.0 V, it achieves R_DS(on) = 0.27 Ω, and at V_GS = 5.0 V, R_DS(on) = 0.18 Ω-confirming reliable logic-level drive without gate boosting. This eliminates need for dedicated high-side drivers in many MCU-based power stages.

Can IRL640S be used in surface-mount designs without a heatsink?

Yes, the IRL640S can operate without an external heatsink in low-duty-cycle or low-power applications: its PCB-mount power dissipation rating is 3.1 W at T_A = 25 °C (R_thJA = 40 °C/W). For sustained 17 A operation, however, thermal design must include the exposed drain pad soldered to a copper pour or heatsink, leveraging R_thJC = 1.0 °C/W to manage junction temperature.

What are the key body diode specifications of IRL640S relevant to synchronous rectification?

The IRL640S body diode has V_SD = 2.0 V at I_S = 17 A and T_J = 25 °C, t_rr = 310–470 ns, and Q_rr = 3.2–4.8 μC. These values determine reverse recovery loss and voltage overshoot during commutation. The relatively low Q_rr and tight t_rr tolerance support efficient synchronous rectification in buck and LLC converters when paired with appropriate gate timing.

IRL640S Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 10A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL640S FAQ

1.How can I place an order for IRL640S through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL640S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL640S reliable?

The price and inventory of IRL640S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL640S is usually 5 days.

3.What payment methods are accepted for IRL640S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL640S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL640S?

IRL640S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL640S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL640S?

For technical support, including IRL640S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL640S requirements.

6.How does Aetrix verify that IRL640S is sourced from the original manufacturer or authorized distributors?

All IRL640S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL640S meets industry standards.

7.What is the process for return or replacement of IRL640S?

All IRL640S units undergo pre-shipment inspection (PSI). If there is an issue with IRL640S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL640S part is unused and in its original packaging.

Return procedure for IRL640S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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