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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRL640STRRPBF

Name: IRL640STRRPBF
Brand: Vishay Siliconix
SKU: IRL640STRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL640STRRPBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL640STRRPBF.pdf

Description:: MOSFET N-CH 200V 17A D2PAK

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Product details

Overview

IRL640STRRPBF from Vishay Siliconix is a logic-level N-channel power MOSFET in D2PAK (TO-263) package, rated for 200 V V_DS, 17 A continuous drain current at T_C = 25 °C, and 0.18 Ω R_DS(on) at V_GS = 5 V. It supports fast switching, repetitive avalanche operation, and is optimized for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRL640STRRPBF datasheet, IRL640STRRPBF pinout, IRL640STRRPBF application, or IRL640STRRPBF equivalent, key selection criteria include its logic-level gate drive compatibility with 4–5 V microcontrollers, low on-resistance at standard logic voltages, robust dV/dt immunity (5.0 V/ns), and surface-mount D2PAK thermal performance up to 125 W with heatsink.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family, engineered for ruggedized switching in high-current, medium-voltage applications. Its design integrates low R_DS(on) with fast dynamic characteristics: 66 nC total gate charge, 83 ns rise time, and 310–470 ns body diode reverse recovery time - enabling efficient hard-switched topologies without external snubbers.

The IRL640STRRPBF features an integral body diode rated for 17 A continuous source-drain current and 68 A pulsed current, with specified peak diode recovery dV/dt of 5.0 V/ns. Its thermal resistance is 1.0 °C/W junction-to-case and 40 °C/W junction-to-ambient (PCB mount), supporting stable operation up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports input rails up to 160 V DC in industrial power supplies and motor drives
R_DS(on) @ V_GS = 5 V	0.18 Ω - enables <1.8 W conduction loss at 10 A, reducing heatsink requirements
Q_g	66 nC - determines gate driver current demand (~1.3 A peak for 50 ns turn-on)
I_D (continuous, T_C = 25 °C)	17 A - usable in high-current load switches and synchronous rectifiers
E_AS	580 mJ - allows unclamped inductive switching without external protection in flyback or H-bridge freewheeling
dV/dt rating	5.0 V/ns - ensures noise immunity during fast voltage transients in high-side switching
T_J range	−55 to +150 °C - qualified for extended industrial and automotive under-hood environments

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-terminal configuration (G, D, S); footprint compatible with JEDEC TO-263AB outline; recommended minimum PCB pads per Vishay AN826.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Logic-level compatible: fully enhanced at V_GS = 4–5 V; threshold 1.0–2.0 V
D (Drain)	High-side power terminal	Connected to exposed copper tab; carries full load current and dissipates heat directly to PCB/heatsink
S (Source)	Reference and return path	Common node for gate drive reference and current sensing; internal source inductance 7.5 nH affects switching ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 4–5 V gate voltage - eliminates need for gate driver boost stages in MCU-based systems
Repetitive avalanche rated	Rated for 10 A repetitive avalanche current and 13 mJ energy - enables reliable operation in inductive load switching without snubber circuits
Dynamic dV/dt immunity	5.0 V/ns - prevents false turn-on during high dv/dt events in half-bridge configurations
Low R_DS(on) at V_GS = 4 V	0.27 Ω - maintains efficiency even with marginal gate drive voltage in battery-powered systems
Fast body diode recovery	t_rr = 310–470 ns - reduces switching losses and EMI in synchronous rectification and freewheeling paths

Applications

DC-DC Converter Primary Switch	Brushed DC Motor Half-Bridge
Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 15 A output. IC Role / Device Role / Timing Role: Main high-side switching element controlled by PWM controller; operates at 100–500 kHz. Use Value: Low 0.18 Ω R_DS(on) minimizes conduction loss; 66 nC Q_g enables efficient gate driving with integrated controllers.	Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators and robotics. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; commutated at ≤20 kHz with PWM duty control. Use Value: Repetitive avalanche rating absorbs inductive kickback during direction reversal; logic-level gate simplifies MCU GPIO interface.
AC-DC PFC Switch	High-Current Load Switch
Use Scenario: Boost-type active PFC stage in 200–500 W SMPS with universal AC input. IC Role / Device Role / Timing Role: Fast-switching power switch operating in critical conduction mode (CrM) at variable frequency up to 150 kHz. Use Value: 200 V V_DS withstands reflected line transients; 5.0 V/ns dV/dt rating suppresses false triggering during zero-crossing transitions.	Use Scenario: 12–24 V system power distribution with hot-swap and inrush control. IC Role / Device Role / Timing Role: Single-pole high-side load switch managed by microcontroller GPIO. Use Value: 17 A continuous rating supports >200 W loads; logic-level gate allows direct drive from 3.3 V/5 V MCUs without level shifters.

DC-DC Converter Primary Switch

Brushed DC Motor Half-Bridge

Use Scenario: High-efficiency 12–48 V input buck converter delivering up to 15 A output.

IC Role / Device Role / Timing Role: Main high-side switching element controlled by PWM controller; operates at 100–500 kHz.

Use Value: Low 0.18 Ω R_DS(on) minimizes conduction loss; 66 nC Q_g enables efficient gate driving with integrated controllers.

Use Scenario: Bidirectional 24 V brushed motor control in industrial actuators and robotics.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge topology; commutated at ≤20 kHz with PWM duty control.

Use Value: Repetitive avalanche rating absorbs inductive kickback during direction reversal; logic-level gate simplifies MCU GPIO interface.

AC-DC PFC Switch

High-Current Load Switch

Use Scenario: Boost-type active PFC stage in 200–500 W SMPS with universal AC input.

IC Role / Device Role / Timing Role: Fast-switching power switch operating in critical conduction mode (CrM) at variable frequency up to 150 kHz.

Use Value: 200 V V_DS withstands reflected line transients; 5.0 V/ns dV/dt rating suppresses false triggering during zero-crossing transitions.

Use Scenario: 12–24 V system power distribution with hot-swap and inrush control.

IC Role / Device Role / Timing Role: Single-pole high-side load switch managed by microcontroller GPIO.

Use Value: 17 A continuous rating supports >200 W loads; logic-level gate allows direct drive from 3.3 V/5 V MCUs without level shifters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF640NPbF	Higher V_GS(th) (2–4 V), higher R_DS(on) (0.18 Ω @ V_GS = 10 V only), not logic-level	Requires 10 V gate drive; unsuitable for 3.3 V/5 V MCU direct drive	Select IRL640STRRPBF when gate drive voltage ≤5 V is required; IRF640NPbF only if 10 V driver available
STP20NM60FD	600 V rating, lower R_DS(on) (0.23 Ω @ V_GS = 10 V), no logic-level spec, higher Q_g (90 nC)	Designed for higher-voltage flyback/SMPS; over-spec'd for 200 V applications	Choose IRL640STRRPBF for cost-optimized 200 V logic-level switching; STP20NM60FD only if 600 V breakdown margin is mandatory

Compared with IRF640NPbF and STP20NM60FD, the IRL640STRRPBF uniquely delivers 200 V capability with true logic-level enhancement (V_GS(th) ≤2.0 V), enabling direct 5 V MCU control while maintaining low conduction loss and robust avalanche performance - a balance not achieved by either alternative.

Availability

IRL640STRRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor control circuits, and industrial load switching requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for IRL640STRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors and passive components, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRL640STRRPBF belongs to Vishay's logic-level power MOSFET product line, designed specifically for high-current, medium-voltage switching applications where direct microcontroller gate drive and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current for IRL640STRRPBF at 100 °C case temperature?

The IRL640STRRPBF supports 11 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D2PAK package and must be validated against actual board layout and heatsinking. The IRL640STRRPBF maintains R_DS(on) stability across this range due to its positive V_DS temperature coefficient.

Does IRL640STRRPBF have a specified body diode reverse recovery time?

Yes, the IRL640STRRPBF datasheet specifies t_rr = 310–470 ns at T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/μs. This parameter is critical for evaluating switching losses in freewheeling paths and synchronous rectification. The IRL640STRRPBF body diode also has Q_rr = 3.2–4.8 μC, directly impacting EMI and voltage overshoot.

Is IRL640STRRPBF RoHS-compliant and halogen-free?

Yes, IRL640STRRPBF is lead (Pb)-free and halogen-free, conforming to Vishay's material categorization per document 99912. The "PbF" suffix denotes RoHS-compliant termination finish. This version uses matte tin plating and meets JEDEC J-STD-609A Class 1 for halogen content, making it suitable for environmentally regulated industrial and consumer designs.

What is the gate-source leakage current specification for IRL640STRRPBF?

The IRL640STRRPBF specifies gate-source leakage current I_GSS ≤ ±100 nA at V_GS = ±10 V and T_J = 25 °C. This low leakage ensures minimal gate drive power loss and stable biasing in high-impedance gate networks. The IRL640STRRPBF maintains this spec across its full operating temperature range, supporting reliable operation in thermally demanding environments.

Can IRL640STRRPBF be used in avalanche-mode switching without external protection?

Yes, the IRL640STRRPBF is explicitly rated for repetitive avalanche operation: 10 A I_AR and 13 mJ E_AR per pulse. Its single-pulse avalanche energy is 580 mJ. These ratings allow controlled inductive turn-off in motor drives and relay drivers without snubbers - provided pulse width and duty cycle remain within limits defined in Figure 11 and Note "a" of the datasheet. The IRL640STRRPBF's ruggedized die design enables this capability.

IRL640STRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 10A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRL640STRRPBF FAQ

1.How can I place an order for IRL640STRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL640STRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL640STRRPBF reliable?

The price and inventory of IRL640STRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL640STRRPBF is usually 5 days.

3.What payment methods are accepted for IRL640STRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL640STRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL640STRRPBF?

IRL640STRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL640STRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL640STRRPBF?

For technical support, including IRL640STRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL640STRRPBF requirements.

6.How does Aetrix verify that IRL640STRRPBF is sourced from the original manufacturer or authorized distributors?

All IRL640STRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL640STRRPBF meets industry standards.

7.What is the process for return or replacement of IRL640STRRPBF?

All IRL640STRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL640STRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL640STRRPBF part is unused and in its original packaging.

Return procedure for IRL640STRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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