Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRLD024PBF

Name: IRLD024PBF
Brand: Vishay Siliconix
SKU: IRLD024PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLD024PBF

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: 4-DIP (0.300", 7.62mm)

Datasheet:: IRLD024PBF.pdf

Description:: MOSFET N-CH 60V 2.5A 4DIP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,065

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLD024PBF from Vishay Siliconix is a logic-level N-channel power MOSFET in HVMDIP (4-pin DIP) package, rated for 60 V V_DS, 2.5 A continuous drain current at 25 °C, and 0.10 Ω R_DS(on) at V_GS = 5 V. It delivers fast switching, 175 °C operation, and integrated body diode recovery for low-voltage DC-DC converter, motor control, and solid-state relay applications.

For engineers reviewing the IRLD024PBF datasheet, IRLD024PBF pinout, IRLD024PBF application, or IRLD024PBF equivalent, this page provides verified electrical parameters, thermal performance data, gate charge characteristics, avalanche energy rating (91 mJ), and real-world design implications for logic-driven switching circuits requiring <1 W dissipation and automatic insertion compatibility.

Technical Context

The IRLD024PBF uses a third-generation planar vertical DMOS structure optimized for low gate charge (Q_g = 18 nC) and fast turn-on/turn-off (t_d(on) = 11 ns, t_f = 41 ns). Its dual-drain configuration serves as a thermal link to the PCB, enabling 1 W power dissipation without heatsinking.

It supports logic-level drive with V_GS(th) between 1.0 V and 2.0 V and maintains stable R_DS(on) across temperature (typical ΔV_DS/T_J = 0.060 V/°C). The device is characterized for unclamped inductive switching (EAS = 91 mJ) and exhibits dV/dt ruggedness up to 4.5 V/ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with margin.
R_DS(on) @ V_GS = 5 V	0.10 Ω - Enables ≤0.625 W conduction loss at 2.5 A; compatible with 3.3 V/5 V microcontroller GPIOs.
Q_g	18 nC - Low gate charge reduces driver power demand and enables high-frequency PWM (≥100 kHz) with minimal gate drive loss.
EAS	91 mJ - Supports robust unclamped inductive turn-off in relay/motor drive without external snubbers.
T_J max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating below 100 °C.
R_thJA	120 °C/W - Thermal resistance confirms 1.3 W P_D rating at T_A = 25 °C; requires minimum copper area for sustained 1 W dissipation.

Pinout & Package

The IRLD024PBF is housed in a 4-pin HVMDIP (High Voltage Mini-DIP) package with dual drain leads for enhanced thermal conduction to the PCB. Leads are spaced on 0.1" centers and designed for automated insertion and end-stacking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Logic-level input; threshold 1.0–2.0 V; accepts direct drive from 3.3 V or 5 V MCUs without level-shifting.
D (Pin 1 & 4)	Drain (dual)	Parallel drain terminals reduce source inductance and improve thermal path to mounting surface; used for high-side or low-side switching.
S	Source	Reference node for gate drive and current sensing; internal source inductance LS = 6.0 nH affects di/dt during switching transitions.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0 V (R_DS(on) = 0.14 Ω), eliminating need for gate driver ICs in low-power control stages.
Dynamic dV/dt rating	Rated for 4.5 V/ns peak diode recovery dV/dt, preventing false turn-on during fast commutation in inductive loads.
End-stackable DIP package	HVMDIP mechanical design allows vertical stacking of multiple units on 0.1" pitch headers, saving board space in multi-channel relay modules.
175 °C junction rating	Enables reliable operation in automotive under-hood, industrial PLC, and sealed power supply environments without thermal throttling.

Applications

DC-DC Converter Switch	Brushed DC Motor Driver
Use Scenario: Synchronous buck converter stage in 5–24 V input, 3.3/5/12 V output power supplies for embedded controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch with fast turn-off (t_f = 41 ns) and low R_DS(on) to minimize conduction loss. Use Value: Achieves >92% efficiency at 2 A load with 5 V gate drive; dual drain improves thermal coupling to ground plane.	Use Scenario: H-bridge half-bridge leg driving 12 V, 1–2 A brushed motors in robotics and actuator modules. IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU PWM; body diode handles freewheeling current during off-time. Use Value: Q_rr = 0.49–1.5 μC and t_rr = 110–260 ns enable clean flyback recovery; dV/dt ruggedness prevents shoot-through during direction reversal.
Solid-State Relay (SSR)	Hot-Swap Controller
Use Scenario: AC/DC input stage SSR replacing electromechanical relays in programmable logic controllers and building automation panels. IC Role / Device Role / Timing Role: Main power switch with integrated body diode; configured in common-source topology for load switching. Use Value: EAS = 91 mJ withstands inductive kick during load disconnection; 175 °C rating ensures reliability in sealed enclosures.	Use Scenario: Inrush current limiter and fault protection switch in 5–12 V hot-pluggable backplane slots or USB-C PD accessories. IC Role / Device Role / Timing Role: Load switch with controlled turn-on via RC-gated gate drive to limit dI/dt during insertion. Use Value: R_DS(on) stability over temperature avoids thermal runaway; low Q_g enables precise slew-rate control using small gate resistors.

DC-DC Converter Switch

Brushed DC Motor Driver

Use Scenario: Synchronous buck converter stage in 5–24 V input, 3.3/5/12 V output power supplies for embedded controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch with fast turn-off (t_f = 41 ns) and low R_DS(on) to minimize conduction loss.

Use Value: Achieves >92% efficiency at 2 A load with 5 V gate drive; dual drain improves thermal coupling to ground plane.

Use Scenario: H-bridge half-bridge leg driving 12 V, 1–2 A brushed motors in robotics and actuator modules.

IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU PWM; body diode handles freewheeling current during off-time.

Use Value: Q_rr = 0.49–1.5 μC and t_rr = 110–260 ns enable clean flyback recovery; dV/dt ruggedness prevents shoot-through during direction reversal.

Solid-State Relay (SSR)

Hot-Swap Controller

Use Scenario: AC/DC input stage SSR replacing electromechanical relays in programmable logic controllers and building automation panels.

IC Role / Device Role / Timing Role: Main power switch with integrated body diode; configured in common-source topology for load switching.

Use Value: EAS = 91 mJ withstands inductive kick during load disconnection; 175 °C rating ensures reliability in sealed enclosures.

Use Scenario: Inrush current limiter and fault protection switch in 5–12 V hot-pluggable backplane slots or USB-C PD accessories.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on via RC-gated gate drive to limit dI/dt during insertion.

Use Value: R_DS(on) stability over temperature avoids thermal runaway; low Q_g enables precise slew-rate control using small gate resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLML0030TRPBF	Smaller SOT-23 package (0.55 W P_D), lower R_DS(on) (0.045 Ω @ 4.5 V), but only 30 V V_DS.	Not suitable for 48 V systems; limited to ≤12 V loads with higher current density.	Select when board space is critical and voltage stress remains ≤30 V; verify thermal margin at 0.55 W.
FQP30N06L	TO-220 package (2.5 W P_D), same 60 V rating, but higher R_DS(on) (0.075 Ω @ 10 V) and non-logic gate (V_GS(th) = 1–2.5 V).	Requires 10 V gate drive for full enhancement; better for higher-power, heatsinked designs.	Choose when >1 W continuous dissipation is needed and gate drive voltage ≥10 V is available.

Compared with IRLD024PBF, the IRLML0030TRPBF trades voltage headroom and thermal capacity for miniaturization, while the FQP30N06L offers higher power handling at the cost of logic-level compatibility and board-level thermal management complexity.

Availability

IRLD024PBF is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, solid-state relays, hot-swap controllers, and low-power industrial switching applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.

Supply support for IRLD024PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-volume manufacturability.

The IRLD024PBF belongs to Vishay's logic-level power MOSFET product line, engineered for cost-sensitive, auto-insertable, thermally constrained applications such as industrial controls, power supplies, and motor drives where simplicity and robustness are prioritized.

FAQ

What is the maximum continuous drain current for IRLD024PBF at 100 °C ambient temperature?

The IRLD024PBF supports 1.8 A continuous drain current at T_A = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the HVMDIP package's R_thJA = 120 °C/W. At higher ambient temperatures, conduction losses must be recalculated using the normalized R_DS(on) vs. temperature curve (Fig. 4) to ensure T_J stays within 175 °C.

Does IRLD024PBF have a built-in body diode, and what are its key recovery specifications?

Yes, the IRLD024PBF integrates a body diode with typical reverse recovery time (t_rr) of 110–260 ns and reverse recovery charge (Q_rr) of 0.49–1.5 μC at T_J = 25 °C, I_F = 17 A, and dI/dt = 100 A/μs. These values are critical for freewheeling in inductive switching applications and directly impact switching loss and EMI behavior.

Can IRLD024PBF be driven directly from a 3.3 V microcontroller GPIO without a gate driver?

Yes, the IRLD024PBF is specified for R_DS(on) = 0.14 Ω at V_GS = 4.0 V and has V_GS(th) as low as 1.0 V, making it compatible with 3.3 V logic. However, full enhancement and minimal conduction loss require ensuring the MCU can source sufficient gate charge (Q_g = 18 nC) during turn-on; weak GPIOs may slow switching and increase dynamic loss.

What is the avalanche energy rating of IRLD024PBF, and under what conditions is it valid?

The IRLD024PBF has a single-pulse unclamped inductive avalanche energy rating (EAS) of 91 mJ, measured under conditions of V_DD = 25 V, starting T_J = 25 °C, L = 16 mH, R_g = 25 Ω, and I_AS = 2.5 A (per Fig. 12). This rating validates safe operation during inductive turn-off transients without external clamping components.

Is the HVMDIP package of IRLD024PBF RoHS-compliant and lead (Pb)-free?

Yes, the IRLD024PBF is explicitly marked "PbF" (lead-free) in its ordering code and complies with RoHS Directive 2011/65/EU. Vishay confirms Pb-free termination and compliant materials per its material categorization document (www.vishay.com/doc?99912), and the device is rated for peak soldering temperature of 300 °C for 10 seconds.

IRLD024PBF Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: 4-DIP (0.300", 7.62mm)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 5V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 1.5A, 5V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 18 nC @ 5 V

Vgs (Max):: ±10V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.3W (Ta)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: 4-HVMDIP

IRLD024PBF FAQ

1.How can I place an order for IRLD024PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLD024PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLD024PBF reliable?

The price and inventory of IRLD024PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLD024PBF is usually 5 days.

3.What payment methods are accepted for IRLD024PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLD024PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLD024PBF?

IRLD024PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLD024PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLD024PBF?

For technical support, including IRLD024PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLD024PBF requirements.

6.How does Aetrix verify that IRLD024PBF is sourced from the original manufacturer or authorized distributors?

All IRLD024PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLD024PBF meets industry standards.

7.What is the process for return or replacement of IRLD024PBF?

All IRLD024PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLD024PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLD024PBF part is unused and in its original packaging.

Return procedure for IRLD024PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …