Vishay Siliconix IRLD110

Overview

IRLD110 from Vishay Siliconix is a logic-level N-channel power MOSFET in HVMDIP (4-pin DIP) package, rated for 100 V V_DS, 0.54 Ω R_DS(on) at V_GS = 5 V, and 1 A continuous drain current at 25 °C. It features repetitive avalanche rating, 175 °C operation, and is designed for low-cost automated insertion in DC-DC converters, motor control, and load switching.

For engineers reviewing the IRLD110 datasheet, IRLD110 pinout, IRLD110 application, or IRLD110 equivalent, key selection considerations include its logic-level gate drive compatibility with 3.3 V/5 V microcontrollers, thermal performance in stacked DIP layouts, avalanche ruggedness in inductive switching, and dual-drain thermal path enabling 1 W dissipation without heatsink.

Technical Context

This device belongs to Vishay's third-generation power MOSFET family optimized for fast switching and cost-sensitive industrial controls. Its gate threshold voltage (1–2 V) ensures reliable turn-on with standard logic drivers, while the specified Q_g = 6.1 nC and low C_iss = 250 pF support efficient high-frequency PWM operation up to several hundred kHz.

The HVMDIP package integrates dual drain leads as a thermal conduction path to the PCB, enabling passive cooling up to 1 W. Its dV/dt immunity of 5.5 V/ns and body diode t_rr = 110–130 ns support robust commutation in flyback and half-bridge topologies with minimal snubbing.

Key Specifications

Pinout & Package

The IRLD110 uses the HVMDIP (High Voltage Mini-DIP) 4-pin through-hole package with dual drain leads (D1/D2), single source (S), and gate (G). The dual drain configuration provides enhanced thermal conduction to the PCB mounting surface, supporting up to 1 W power dissipation in natural convection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLD024PbF and FQP30N06L, the IRLD110 uniquely balances 100 V rating, DIP manufacturability, and logic-level drive in a thermally optimized 4-pin package-making it optimal for cost-sensitive, space-constrained 48 V industrial controls where pin-compatible alternatives are unavailable.

Availability

IRLD110 is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, and industrial load switches requiring stable component supply, long-term obsolescence management, and consistent parametric performance across production batches.

Supply support for IRLD110 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-volume manufacturability.

The IRLD110 belongs to Vishay's logic-level power MOSFET product line engineered for cost-effective, automated assembly in industrial control, power conversion, and appliance applications where thermal efficiency and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current for the IRLD110 at 100 °C ambient temperature?

The IRLD110 supports 0.70 A continuous drain current at T_A = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the HVMDIP package without heatsinking. At 25 °C ambient, the rating is 1 A. Designers must verify junction temperature using R_thJA = 120 °C/W and actual power dissipation to ensure operation remains within the 175 °C maximum junction limit.

Does the IRLD110 have a built-in body diode, and what are its key parameters?

Yes, the IRLD110 integrates a body diode inherent to its N-channel MOSFET structure. Key parameters include V_SD = 2.5 V at I_S = 1 A and T_J = 25 °C, reverse recovery time t_rr = 110–130 ns, and reverse recovery charge Q_rr = 0.50–0.65 μC. These values are measured under standardized conditions (IF = 5.6 A, dI/dt = 100 A/μs) and define its freewheeling capability in inductive switching circuits.

Can the IRLD110 be used with a 3.3 V microcontroller GPIO pin without a gate driver?

Yes, the IRLD110 can be directly driven by a 3.3 V microcontroller GPIO because its gate threshold voltage V_GS(th) is specified from 1 V to 2 V, and R_DS(on) is guaranteed at V_GS = 4 V and 5 V. At 3.3 V, it achieves partial enhancement; for full conduction (R_DS(on) ≤ 0.76 Ω), 4 V is recommended. For robust switching at higher frequencies, a small buffer may still improve rise/fall times.

What does "repetitive avalanche rated" mean for the IRLD110, and how is it tested?

"Repetitive avalanche rated" means the IRLD110 is characterized and guaranteed to withstand repeated unclamped inductive switching events without failure. Per datasheet Fig. 12, it is tested with V_DD = 25 V, L = 6.4 mH, R_g = 25 Ω, and I_AS = 5.6 A, yielding I_AR = 1 A and E_AR = 0.13 mJ. This rating enables use in circuits lacking external clamping diodes, such as certain relay drivers and solenoid controls.

Is the IRLD110 RoHS-compliant and halogen-free?

Yes, the IRLD110PbF variant is lead (Pb)-free and RoHS-compliant, as indicated by the "PbF" suffix and confirmed in Vishay's material categorization documentation (www.vishay.com/doc?99912). It meets JEDEC JS709A and IPC-1752A requirements for halogen-free status, with chlorine and bromine content below 900 ppm each.